• Korean Journal of Materials Research
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• v.26 no.4
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• pp.173-181
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• 2016

In order to use coal tar pitch (CTP) as a raw material for carbon fibers, it should have suitable properties such as a narrow range of softening point, suitable viscosity and uniform optical properties. In this study, raw CTP was modified by heat treatment with three types of polymer additives (PS, PET, and PVC) to make a spinnable pitch for carbon fibers. The yield, softening point, C/H ratio, insoluble yield, and meso-phase content of various modified CTPs with polymer additives were analyzed by changing the type of polymer additive and the heat treatment temperature. The purpose of this study was to compare the properties of CTPs modified by polymer addition with those of a commercial CTP. After the pitch spinning, the obtained green fibers were stabilized and carbonized. The properties of the respective fibers were analyzed to compare their uniformity, diameter change, and mechanical properties. Among three polymer additives, PS220 and PET261 pitches were found to be spinnable, but the carbon fibers from PET261 showed mechanical properties comparable with those of a commercial CTP produced by an air-blowing method (OCI284). The CTPs modified with polymer additive had higher ${\beta}$-resin fractions than the CTP with only thermal treatment indicating a beneficial effect of carbon fiber application.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.55-57
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• 2017

Amorphous oxide thin film transistors (TFTs) were fabricated with 0.5 wt% silicon doped zinc tin oxide (a-0.5SZTO) thin film deposited by radio frequency (RF) magnetron sputtering. In order to investigate the effect of annealing treatment on the electrical properties of TFTs, a-0.5SZTO thin films were annealed at three different temperatures ($300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 2 hours in a air atmosphere. The structural and electrical properties of a-0.5SZTO TFTs were measured using X-ray diffraction and a semiconductor analyzer. As annealing temperature increased from $300^{\circ}C$ to $500^{\circ}C$, no peak was observed. This provided crystalline properties indicating that the amorphous phase was observed up to $500^{\circ}C$. The electrical properties of a-0.5SZTO TFTs, such as the field effect mobility (${\mu}_{FE}$) of $24.31cm^2/Vs$, on current ($I_{ON}$) of $2.38{\times}10^{-4}A$, and subthreshold swing (S.S) of 0.59 V/decade improved with the thermal annealing treatment. This improvement was mainly due to the increased carrier concentration and decreased structural defects by rearranged atoms. However, when a-0.5SZTO TFTs were annealed at $700^{\circ}C$, a crystalline peak was observed. As a result, electrical properties degraded. ${\mu}_{FE}$ was $0.06cm^2/Vs$, $I_{ON}$ was $5.27{\times}10^{-7}A$, and S.S was 2.09 V/decade. This degradation of electrical properties was mainly due to increased interfacial and bulk trap densities of forming grain boundaries caused by the annealing treatment.

• Nuclear Engineering and Technology
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• v.43 no.4
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• pp.391-398
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• 2011

The U metal chips generated in developing nuclear fuel and a gamma radioisotope shield have been stored under immersion of water in KAERI. When the water of the storing vessels vaporizes or drains due to unexpected leaking, the U metal chips are able to open to air. A new oxidation treatment process was raised for a long time safe storage with concepts of drying under vacuum, evaporating the containing water and organic material with elevating temperature, and oxidizing the uranium metal chips at an appropriate high temperature under conditions of controlling the feeding rate of oxygen gas. In order to optimize the oxidation process the uranium metal chips were completely dried at higher temperature than $300^{\circ}C$ and tested for oxidation at various temperatures, which are $300^{\circ}C$, $400^{\circ}C$, and $500^{\circ}C$. When the oxidation temperature was $400^{\circ}C$, the oxidized sample for 7 hours showed a temperature rise of $60^{\circ}C$ in the self-ignition test. But the oxidized sample for 14 hours revealed a slight temperature rise of $7^{\circ}C$ representing a stable behavior in the self-ignition test. When the temperature was $500^{\circ}C$, the shorter oxidation for 7 hours appeared to be enough because the self-ignition test represented no temperature rise. By using several chemical analyses such as carbon content determination, X-ray deflection (XRD), Infrared spectra (IR) and Thermal gravimetric analysis (TGA) on the oxidation treated samples, the results of self-ignition test of new oxidation treatment process for U metal chip were interpreted and supported.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.214.2-214.2
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• 2013

Device performance for the 45 and 32 nm node CMOS technology requires the integration of ultralow-k materials. To lower the dielectric constant for PECVD and spin-on materials, partial replacement of the solid network with air (k=1.01) appears to be more intuitive and direct option. This can be achieved introducting of second "labile" phase during depositoin that is removed during a subsequent UV curing and annealing step. Besides, with shrinking line dimensions the resistivity of barrier films cannot meet the International Technology Roadmap for Semiconductors (ITRS) requirements. To solve this issue self-forming diffusion barriers have drawn attention for great potential technique in meeting all ITRS requirments. In this present work, we report a Cu-V alloy as a materials for the self-forming barrier process. And we investigated diffusion barrier properties of self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films were directly deposited onto low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for both of Cu alloys. The self-formed layers were investigated by transmission electron microscopy. In order to compare barrier properties between V-based interlayer on low-k dielectric with UV curing and interlayer on low-k dielectric without UV curing, thermal stability was measured with various heat treatment temperature. X-ray photoelectron spectroscopy analysis showed that chemical compositions of self-formed layer. The compositions of the V based self-formed barriers after annealing were strongly dominated by the O concentration in the dielectric layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.105-106
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• 2008

Structural, optical and electrical properties of CdS films deposited by chemical bath deposition (CBD), which are a very attractive method for low-cost and large-area solar cells, are presented. Cadmium sulfide (CdS) is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS films have a great application potential such as solar cell, optical detector and optoelectronics device. In this paper, effects of Rapid Thermal Process (RTP) on the properties of CdS films were investigated. The CdS films were prepared on a glass by chemical bath deposition (CBD) and subsequently annealed at standard temperature $(400^{\circ}C)$ and treatment time (10 min) in various atmospheres (air, vacuum and $N_2$). The CdS films treated RTP in $N_2$ for to min were showed larger grain size and higher carrier density than the other samples.

• Korean Chemical Engineering Research
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• v.45 no.4
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• pp.319-327
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• 2007

Incineration has been regarded as the best developed technology available for organically hazardous waste. However, permitting and siting incinerators to treat hazardous waste such as a waste containing PCBs is very difficult due to the public concerns associated with toxic air emissions. Recently, a lot of alternatives to an incineration have been developed and these technologies have the potential of alleviating public concerns by decreasing emissions of hazardous materials such as dioxins and furans. This paper reviews currently available alternative incineration technologies for various hazardous waste streams. Various categories of non-thermal and thermal alternative incineration technologies have been evaluated in terms of their process operating condition, applicability of a waste stream and their emission of secondary waste. Detailed descriptions of operating principles of several technologies are also provided.

• Design & Manufacturing
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• v.14 no.4
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• pp.17-24
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• 2020

Products for heating indoors in low temperature and dry winter are largely divided into products using fossil fuels and products using electricity. The fossil fuels can warm the entire space by convection, but there is a high risk of fire and the frequent ventilation due to the increase in carbon monoxide and carbon dioxide. Heaters using electricity are mainly used because they are convenient to use and are cheap. However, these products can not efficiently warm the air because they use radiation energy. In other words, only the front part exposed to the heater is warm, and the rear part has no heating effect at all. Also, because it emits a large amount of light, fatigue of the eyes is very high. Another problem is that when using electric heaters, the room tends to be dry by high heat. Indoor humidity maintenance is a very important factor in the prevention and treatment of respiratory diseases. Especially, it is essential for health care for infants, bronchial organs and people with weak respiratory because humidity is low in winter. In this study, we conducted a study to develop a product that can improve heating efficiency while maintaining proper indoor humidity by combining heat energy and moisture particles. The concept of humidification and heating at the same time, moisture particles generated in the humidifier pass through the heater, include thermal energy, and the moisture particles with thermal energy are diffused into the space by forced convection, thereby warming the entire space. In addition, the heating time is shortened as the feeling temperature is increased with the high relative humidity, and this has the effect that the heating cost in winter is reduced.

• Asian-Australasian Journal of Animal Sciences
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• v.7 no.4
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• pp.471-474
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• 1994

Five experimental groups with five adult male rats in each, were exposed to 20, 35, 40 and $45^{\circ}C$ air temperature for 50-70 minutes, and to $50^{\circ}C$ for 30-50 minutes, respectively. Food and drinking water were not permitted during the exposure. Blood samples were obtained by heart puncture immediately after the thermal treatment. All the rats were hyperthermic (p<0.01) as compared to the controls ($20^{\circ}C$). Hyperthermia was associated with hypoglycemia which was significant (p<0.01) at 45 and $50^{\circ}C$ exposures. Plasma levels of GOT and GPT declined at 35 and $40^{\circ}C$ reaching the lowest (p<0.05) level at $45^{\circ}C$, while at $50^{\circ}C$ GOT level was elevated by 45% but GPT was normal as compared to the controls. Differences between groups were significant (p<0.01) for GOT and insignificant for GPT. Hematocrit value increased significantly (p<0.01) at 45 and $50^{\circ}C$, indicating hemoconcentration. It could be concluded that severe heat stress (45 and $50^{\circ}C$) resulted in critical hyperthermia, hypoglycemia, disturbed liver function, body dehydration, and hemoconcentration leading to death.

• Journal of Powder Materials
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• v.13 no.3 s.56
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• pp.192-198
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• 2006

The nanostructured cerium oxide powders were synthesized by spray thermal decomposition process for the use as the raw materials of resistive oxygen sensor. The synthesis routes consisted of 1) spray drying of water based organic solution made from cerium nitrate hydrate ($Ce(NO_3){_3}6H_2O$) and 2) heat treatment of spray dried precursor powders at $400^{\circ}C$ in air atmosphere to remove the volatile components and identically to oxidize the cerium component. The produced powders have shown the loose structure agglomerated with extremely fine cerium oxide particles with about 15 nm and very high specific surface area ($110m^2/g$). The oxygen sensitivity, n ($Log{\propto}Log (P_{O2}/P^o)^{-n}$ and the response time, $t_{90}$ measured at $600^{\circ}C$ in the sample sintered at $1000^{\circ}C$, were about 0.25 and 3 seconds, respectively, which had much higher performances than those known in micron or $100{\sim}200nm$ sized sensors.

• Journal of the Korean Ceramic Society
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• v.56 no.2
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• pp.191-196
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• 2019

This study assessed the feasibility of a Ti₃AlC₂ MAX phase as an Al-source for the formation of a mullite bond in the fabrication of porous SiC tubes with high strength. The as-received Ti₃AlC₂ was partially oxidized at 1200℃ for 30 min before using to minimize the abrupt volume expansion caused by oxidation during sintering. Thermal treatment at 1100-1400℃ for 3 h in air led to the formation of Al₂O₃ by the decomposition of Ti₃AlC₂, which reacted further with oxidation-derived SiO₂ on the SiC surface to form a mullite phase. The fabricated porous SiC tubes with a relative density of 48 - 62 % exhibited mechanical strengths of 80 - 200 MPa, which were much higher than those with the Al₂O₃ filler material. The high mechanical strength of the Ti₃AlC₂-added porous SiC was explained by the rigid mullite neck formation along with the retained Ti₃AlC₂ with good mechanical properties.