• 대한기계학회논문집B
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• 제36권10호
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• pp.1019-1023
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• 2012

본 연구에서는 새로운 알루미늄 유도 결정화 공정을 제안하였다. 알루미늄 박막에 직접 3 A의 정전류를 인가하여 $1cm{\times}1cm$ 넓이의 두께 200 nm 비정질 실리콘 박막을 수십 초 내에 결정화하는 방법이다. 결정화된 다결정 실리콘 박막은 520 $cm^{-1}$ 에서의 라만 분광 피크를 통해 확인할 수 있었다. 공정 후, 알루미늄이 식각된 다결정 실리콘 박막은 다공성 구조임을 SEM 을 통하여 확인할 수 있었다. 또 한, 이차이온질량분석(secondary ion mass spectroscopy)에서 알루미늄 농도가 $10^{21}cm^{-3}$으로 헤비 도핑된 것을 확인 할 수 있었으며, 실시간으로 측정된 열화상 카메라의 결과를 통해 결정화는 820 K 근처에서 일어나는 것을 확인할 수 있었다.

• 한국진공학회지
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• 제5권4호
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• pp.301-308
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• 1996

장전자 방출법으로 텅스텐(210)면 및 (310)면(100)면의 질소 흡착에 의한 일함수의 변화와 heat of desorption을 측정하였으며 Thermal Desortion Spectra(TDS) 결과로부터 adsorption site를 예측하였다. 텅스텐 (210)면 및 (310)면에 질소가 흡착될 때 흡착율에 따라 일함수는 증가하다가 각 면에 대하여 흡착율 5 Lang-muir 일 때 최대 변화량 0.29eV 및 0.20 eV에서 포화되었다. TDS 결과는 이 면들은 낮은 dose의 영역에서 각각 3개의 흡착 site가 있음을 보였으며 이 흡착 site들 중 $\alpha$1 state의 spectrum의 강도는 (210)면에서 보다 (310)면에서 상대적으로 강해짐을 보였다. 또한 (210)와 (310)면의 $\alpha_1$과 $\beta_2$ state의 흡착 site에 흡착된 질소의 dipole moment의 방향은 이 흡착 site들에 대응되는 (100)면의 $\alpha_1$과 $\beta_2$ state의 흡착 site에 흡착된 질소의 dipole moment의 방향과 반대 방향으로 측정되었으며 이 현상으로부터 질소의 상대적인 흡착 위치를 예측하였다.

• 대한기계학회논문집B
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• 제40권9호
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• pp.621-627
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• 2016

본 연구에서는 실험적 데이터를 근간으로 박막재료의 스펙트럼(spectrum) 분포 별 포논-표면 산란율을 직접 계산할 수 있는 모델을 제시했다. 실험 측정결과인 포논 평균자유행로(mean free path, MFP) 스펙트럼 분포 별 열전달 기여도로부터 스펙트럼 의존적 포논-표면 산란율을 직접 도출하는 모델을 개발했고, 이 모델을 아직 실험적 방법으로 포논-표면 산란율을 측정하지 못한 $Si_{0.9}-Ge_{0.1}$ 나노선(Nanowire, NW)에 적용하여, $Si_{0.9}-Ge_{0.1}$ NW 내 포논 MFP 스펙트럼 분포를 구하고, 주파수에 따른 포논 전달특성을 살폈다. 이를 바탕으로 $Si_{0.9}-Ge_{0.1}$ NW 단위길이당 포논-표면 산란율을 제시하여, 가로갈래 포논 주파수 의존성을 살폈다. 본 연구에서 제시한 모델은 향후 나노재료의 공학적 응용을 위한 나노구조물 열전달 해석모델 개발 및 나노재료 열전달 특성 조정(tailoring)을 위한 나노재료 최적설계에 활용될 수 있다.

• 반도체디스플레이기술학회지
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• 제4권1호
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• pp.29-34
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• 2005

Tungsten oxide($WO_{3}$) is suitable to materials for photochromic window in the visible region. The resistivities of CdS, $WO_{3}$, and $WO_{3}$/CdS films prepared by thermal evaporation method were $4.61\times 10\^{3}$, $7.59\times10^{3}$, and $6.29\times10^{3}$ $\omega$ cm. And x-ray diffraction patterns of CdS, $WO_{3}$/CdS films showed a preferred orientation of hexagonal(002), and the monoclinic(020) structure, respectively. The optical transmission were measured that the cut-on wavelength were 510nm, 380nm for CdS and $WO_{3}$ films respectively, and the transmission spectrum of $WO_{3}$/CdS was shifted into the visible region. Photoluminescence(PL) spectra showed the two peaks at 2.8 eV and 3.2 eV for the as-grown sample($WO_{3}$/CdS ($500{\AA}$), but the other sample($WO_{3}$/CdS ($1000{\AA}$)) had a peak energy value of 2.8 eV. The photochromism of $WO_{3}$/CdS films showed that the excitation of electron-hole pairs and subsequent coloration is shifted into visible-light range. And the spectral behavior of coloration turned out to be proportional to the excited electron-hole pairs creation rate of CdS film. This result is interpreted in terms of charge carrier injection from the CdS-layer into the $WO_{3}$ films. We found a value of about 2.8 eV of $WO_{3}$/CdS film which is somewhat higher than peak energy of 2.54 eV using CBD prepared by Bechinger et. al.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.210-213
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• 2002

The blue phosphor, $BaMgAl_{10}O_{17}$:$Eu^{2+}$, showing a blue emission band at about 450 nm were prepared by solid state reaction of BaC $O_3$, A $l_2$ $O_3$, MgO and E $u_2$ $O_3$ with Al $F_3$ as a flux. The thermal quenching of BaMgAl $O_{17}$:E $u^{2+}$ phosphor significantly reduces the intensity of the blue emission. It is reduced by an amount of 50% after heating at around 800$^{\circ}C$ for 1 hr. The red emission in the 580∼720 nm region of $^{5}$ $D_{0}$\longrightarro $w^{7}$ $F_1$ and $^{5}$ $D_{0}$\longrightarro $w^{7}$ $F_2$ transition of $Eu^{3+}$ is produced from the phosphor heated above 1,100$^{\circ}C$. The EPR spectrum also reveals that some part of E $u^{2+}$ ions are oxidized to trivalent ions above 1,100$^{\circ}C$ at around 90 and 140mT. This oxidation evidence is also detected from XANES absorption spectra for $L_{III}$ shell of Eu ions: an absorption peak is at 6,977eV of E $u^{2+}$ and 6,984eV of $Eu^{3+}$. The combined X-ray and neutron data suggests that the new phase of EuMgA $l_{11}$ $O_{19}$ magnetoplumbite structure may be formed by heat treatment.eat treatment.tment.eat treatment.tment.t.

• 미생물학회지
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• 제45권2호
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• pp.177-184
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• 2009

우수한 생균제를 개발하기 위하여 안전성이 알려진 유산균을 대상으로 인체의 분변으로부터 300여 균주를 분리하고 내산성, 내담즙성, 내열성, 항균력, 항암 및 항바이러스 효과를 가지는 균주들을 선발하여 생균제 특성을 나타내는지를 알아보기 위해 본 실험을 수행하였다. 인체에서 분리한 여러 균주 중 Miny-148 균주는 낮은 pH 및 높은 담즙산에 대한 내성, 열처리에 대한 열안정성을 지녀 기초적인 probiotic 특성을 가진 균주로 선발되어, Lactobacillus pentosus (99.9% 상동성)로 동정되었다. 항균력 실험에서 Escherichia coli O157:H7을 비롯한 Shigella flexneri, Bacillus anthracis, Staphylococcus aureus, E. coli, Vibrio cholerae, V. vulnificus, Salmonella typhimurium, 그리고 및 methicillin-resistant S. aureus (MRSA) 균주 8종 등 총 16종의 병원성세균을 억제하였다. 또한 Miny-148은 결장암 세포인 HT-29 cell을 억제하였을 뿐 아니라, transmissible gastroenteritis virus의 생육을 저해하여 세포변성 억제효과를 가진 우수한 probiotic 특성을 지닌 균주로 분석되었다.

• Journal of Plant Biology
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• 제39권1호
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• pp.57-61
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• 1996

Thermal denaturation, reassociation kinectics 및 핵부피 측정 방법으로 고추 게놈의 염기 조성, kinetic component 및 게놈 크기를 조사하였다. 변성온도(Tm)에 근거한 고추 게놈의 염기 조성은 37% (G＋C)였으며, Cot 커브에 근거한 고추 게놈은 카피수가 10,754, 178 및 1이고 kinetic complexity가 $5.6{\times}10^{3}\;bp,\;1.9{\times}10^{6}\;bp\;및\;1.9{\times}10^{8}\;bp$인 3개의 성분이 게놈의 4.2%, 26% 및 65%를 차지하고 있었다. 이로부터 계산한 고추 게놈의 크기는 $1.25{\times}10^{9}\;bp/C$인데, 이는 핵부피($62.4\;\mu\textrm{m}^3/C$)로부터 계산한 $4.053{\times}10^{9}\;bp/C$의 약 33%에 해당한다.

• Bulletin of the Korean Chemical Society
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• 제35권2호
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• pp.587-596
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• 2014

A new ${\pi}$-stacked donor-acceptor (D-A) system, [Ru(1-([2,2'-bipyridine]-6-yl-methyl)-3-(2-cyclohexa-2',5'-diene-1,4-dionyl)-1H-imidazole)(2,2':6',2"-terpyridine)]$[PF_6]_2$ (ImQ_T), has been synthesized and characterized. Similar to its precedent, [Ru(6-(2-cyclohexa-2',5'-diene-1,4-dione)-2,2':6',2"-terpyridine)(2,2':6',2"-terpyridine)]$[PF_6]_2$ (TQ_T), this system has a cofacial alignment of terpyridine (tpy) ligand and quinonyl (Q) group, which facilitates an electron transfer through ${\pi}$-stacked manifold. Despite the presence of lowest-energy charge transfer transition from the Ru-based-HOMO-to-Q-based-LUMO (MQCT) predicted by theoretical calculations by using time-dependent density functional theory (TD-DFT), the experimental steady-state absorption spectrum does not exhibit such a band. The selective excitation to the Ru-based occupied orbitals-to-tpy-based virtual orbital MLCT state was thus possible, from which charge separation (CS) reaction occurred. The photo-induced CS and thermal charge recombination (CR) reactions were probed by using ultrafast visible-pump/mid-IR-probe (TrIR) spectroscopic method. Analysis of decay kinetics of Q and $Q^-$ state CO stretching modes as well as aromatic C=C stretching mode of tpy ligand gave time constants of <1 ps for CS, 1-3 ps for CR, and 10-20 ps for vibrational cooling processes. The electron transfer pathway was revealed to be Ru-tpy-Q rather than Ru-bpy-imidazol-Q.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.434-436
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• 2013

Ga-doped ZnO (GZO) was substitutes of the SnO2:F films on soda lime glass substrate in the photovoltaic devices such as CIGS, CdTe and DSSC due to good properties and low cost. However, it was reported that the electrical resistivity of GZO is unstable above $300^{\circ}C$ in air atmosphere. To improve thermal stability of GZO thin films at high temperature above $300^{\circ}C$ an $TiO_2$ thin film was deposited on the top of GZO thin films as a barrier layer by Pulsed Laser Deposition (PLD) method. $TiO_2$ thin films were deposited at various thicknesses from 25 nm to 100 nm. Subsequently, these films were annealed at temperature of $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$ in air atmosphere for 20 min. The XRD measurement results showed all the films had a preferentially oriented ( 0 0 2 ) peak, and the intensity of ( 0 0 2 ) peak nearly did not change both GZO (300 nm) single layer and $TiO_2$ (50 nm)/GZO (300 nm) double layer. The resistivity of GZO (300 nm) single layer increased from $7.6{\times}10^{-4}{\Omega}m$ (RT) to $7.7{\times}10^{-2}{\Omega}m$ ($500^{\circ}C$). However, in the case of the $TiO_2$ (50 nm)/GZO (300 nm) double layer, resistivity showed small change from $7.9{\times}10^{-4}{\Omega}m$ (RT) to $5.2{\times}10^{-3}{\Omega}m$ ($500^{\circ}C$). Meanwhile, the average transmittance of all the films exceeded 80% in the visible spectrum, which suggests that these films will be suitable for photovoltaic devices.

• Macromolecular Research
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• 제11권5호
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• pp.297-302
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• 2003

The imidization and cure reaction of a thermosetting phenylethynyl-terminated amic acid (LaRC PETI-5) in film form have been monitored as a function of temperature by means of a steady-state fluorescence technique using a front-face illumination method. The variation of the fluorescence emission spectra of LaRC PETI-5 can be divided into four temperature regions; Region I: below 15$0^{\circ}C$, Region II: 150-25$0^{\circ}C$, Region III: 250-35$0^{\circ}C$, and Region IV: above 35$0^{\circ}C$. The fluorescence spectra in Region I are largely influenced by residual N-methyl-2pyrrolidinone in the polymer and also slightly by partial imidization of the polymer. There is a combined effect of imidization and solvent removal on the fluorescence behavior in Region II. The spectra in Regions III and IV are due significantly to the cure reaction of LaRC PETI-5 and to a post-cure effect of the polyimide, respectively. This spectroscopic evidence indicating the transformation of the amic acid imide oligomer into the corresponding polyimide via imidization and cure, agrees well with thermal analysis results obtained previously. The intermediate stage of cure in the range of 250-30$0^{\circ}C$ predominantly influences the change of the fluorescence intensity. The later stage above 30$0^{\circ}C$ significantly influences the position of the spectrum. This fluorescence study also supports the mechanism proposed in earlier work that the crosslinking reaction takes place at the reaction sites in the conjugated polyene and the phenylethynyl end group in the polyimide chain.