• Transactions of the Korean Society of Automotive Engineers
• /
• v.16 no.3
• /
• pp.15-22
• /
• 2008

Applications of bonded dissimilar materials such as integrated circuit(IC) packages, ceramics/metal and resin/metal bonded joints, are very increasing in various industry fields. It is very important to analyze the thermal stress and stress singularity at interface edge in bonded joints of dissimilar materials. In order to investigate the IC package crack propagating from the edge of die pad and resin, the fracture parameters of bonded dissimilar materials and material properties are obtained. In this paper, the thermal stress and its singularity index for the IC package were analyzed using 2-dimensional elastic boundary element method(BEM). From these results, crack propagation direction and path by thermal stress in the IC package were numerically simulated with boundary element method.

• Journal of the Korean institute of surface engineering
• /
• v.31 no.1
• /
• pp.12-23
• /
• 1998

The Thermal Barrier Coating(TBC) has been used to improve the heat barrier and tribological properties of the aircraft engine and the automobile engine in high temperature. Especially, the high temperature tribological propertied of the cylinder haed and the piston crown of diesel engine was emphasized. Therefore, the purpose of this work was to evaluate the microstructure, tribological propeer in high tempearmal shock resistance and bonding strength of five layer functionally gradient TBC for the applications. The five layerwere composed with 100% ceramic insulating later, 75(ceramic):25 (metal) layer, 50:50 layer, 25:75 layer and 100% metal bonding layer to redude the thermal stress. the YSL and MSL poweders were the insulation ceramics powers. The NiCrAly, Inconel625 and SUS powders were the bonding and mixingg powders for plasma spray process. According to the result of high temperature wear test, the wera resistance of YSZ/NiCrAlY siytem was most out standing at 600 and $800^{\circ}C$. At $400^{\circ}C$, the wear resistance of YSZ/Inconel system was better than others. Wear volume at other temperature because of the low temperature degration of zirconia. The thermal shock mechanism of 5 later is the vertical crack gegration in insulating layer. this means that the initial cracks were generated in the top layer, and then developed into the composite layers during thermal shock test. Finally, these cracks werereached to the interface of coating and substrate and also, these vertioal cracks join with the horizontal cracks of the each layers. The bonding strength of YSZ/NiCrAlY and YSZ/Inconel 5 layer system is better than other 5layer systems. The theramal shock resistance of thermal barrier coating s with 5 layer system is better than that of 3 layers and 2 layers.

• Composites Research
• /
• v.16 no.6
• /
• pp.33-40
• /
• 2003

The initial thermal degradation of polymer matrix composite is not observed easily. At the beginning of thermal degradation of polymer matrix composites, phase transformation such as chain scission, oxidation occur, and then micro delamination is produced in matrix and interface between matrix and fiber before blistering. Initial heat damage deteriorate mechanical properties of composites. We presented the detection method of the initial heat damage of composites conveniently using ultrasonic technique. Absorption coefficient and material velocity was measured with thermal degradation and degree of cure. The more thermal degradation was progressed, the more absorption coefficient was increased. When the cure temperature is more high, the absorption coefficient of cured composite is increased and material velocity is decreased. We concluded that cure temperature is more high, the defects such as void is increased and molecular structure cured at high temperature has cross-linking structure which is more absorb the ultrasonic waves.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1998.06a
• /
• pp.145-148
• /
• 1998

Fluoride({{{{ { CaF}_{2 } }}}}) films exhibited a cubic structure with similar lattice constant to that of Si and have sufficient breakdown electric field as gate dielectric material. Therefore, {{{{ { CaF}_{2 } }}}} are expected to replace conventional insulator such {{{{ { SiO}_{ 2},{Ta}_{2}{O}_{ 2} and{Al}_{2}{O}_{5}. However, {CaF}_{2}}}}} films showed hystereisis properties due to mobile charges in the film. To solve this problem we performed thermal treatment and achieves field. C-v results indicate a reduced hystereisis window of {{{{ }}}}ΔV =0.2v, LOW INTERFACE STATE {{{{{D}_{it}=2.0 TIMES {10}^{11}{cm}^{-1}{eV}^{-1}}}}} in midgap, and good WIS diode properties. We observed a preferential crystallization of(200) plane from XRD analysis. RTA treatment effects on various material properties of {{{{{CaF}_{2}}}}} are presented in this paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.4
• /
• pp.297-301
• /
• 2001

In this paper, the temperature distribution and thermal stress analysis of 50kVA pole cast resin transformer for power distribution are investigated by FEM program. The one body molding model (Model 1) and air duct model (Model 2) are designed and their temperature distribution are analysed. The temperature rise value is about 105.5 deg in the model 1 and 65.28 de in the model 2. The temperature change of secondary winding is more than primary winding according to load ratio. The concentration part of Von Mises Stress occurs at interface between glass fiber and epoxy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.411-414
• /
• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PT layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PT layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PT layer of c-axial orientation rained thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PT layer were measured, too.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.6
• /
• pp.602-607
• /
• 2004

This paper describes the characteristics of Ru-Zr alloy gate electrodes deposited by co-sputtering. The various atomic composition was made possible by controlling sputtering power of Ru and Zr. Thermal stability was examined through 600 and 700 $^{\circ}C$ RTA annealing. Variation of oxide thickness and X-ray diffraction(XRD) pattern after annealing were employed to determine the reaction at interface. Low and relatively stable sheet resistances were observed for Ru-Zr alloy after annealing. Electrical properties of alloy film were measured from MOS capacitor and specific atomic composition of Zr and Ru was found to yield compatible work function for nMOS. Ru-Zr alloy was stable up to $700^{\circ}C$ while maintaining appropriate work function and oxide thickness.

• Transactions of Materials Processing
• /
• v.14 no.5 s.77
• /
• pp.460-465
• /
• 2005

The temperature difference between die and workpiece has been frequently caused to various surface defects. The distribution and change for the temperature of forged part should be analyzed to prevent the generation of various defects related with the temperature. The surface temperature changes were affected with the interface heat transfer coefficient. Therefore, the coefficient is necessary to predict the temperature changes of die and workpiece. In this study, the experimental and FE analysis were performed to evaluate the coefficient with a function of pressure, temperature, material, and etc. The closed die upsetting was used to measure the coefficient on pressure over the flow stress. AISI1045, A16061, and Cu-OFHC were used to analyze the effect of material. The coefficient was increased with step-up of pressure between die and workpiece. And, A16061 was larger than that of the AISI1045 and Cu-OFHC up to the five times.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2004.05a
• /
• pp.122-126
• /
• 2004

The temperature difference between die and workpiece has been frequently caused to various surface defects. The distribution and change fur the temperature of forged part should be analyzed to prevent the generation of various defects related with the temperature. The surface temperature changes were affected with the interface heat transfer coefficient. Therefore, the coefficient is necessary to predict the temperature changes of die and workpiece. In this study, the experimental and FE analysis were performed to evaluate the coefficient with a function of pressure, temperature, material, and etc. The sealed die upsetting was used to measure the coefficient on pressure over the flow stress. AISI1045, Al6XXX, and Pure-Cupper were used to analyze effects according to the material. The coefficient was increased with step-up of pressure between die and workpiece. And, Al6XXX was larger than the AISI1045 and Pure-Cupper up to the five times.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.47-50
• /
• 2000

This paper investigated structural and electrical properties of $Y_2$ $O_3$ as a buffer layer of single transistor FRAM (ferroelectric RAM). $Y_2$ $O_3$ buffer layers were deposited at a low substrate temperature below 40$0^{\circ}C$ and then RTA (rapid thermal anneal) treated. Investigated parameters are substrate temperature, $O_2$ partial pressure, post-annealing temperature, and suppression of interfacial $SiO_2$ layer generation. For a well-fabricated sample, we achieved that leakage current density ( $J_{leak}$) in the order of 10$^{-7}$ A/$\textrm{cm}^2$, breakdown electric field ( $E_{br}$ ) about 2 MV/cm for $Y_2$ $O_3$ film. Capacitance versus voltage analysis illustrated dielectric constants of 7.47. We successfully achieved an interface state density of $Y_2$ $O_3$/Si as low as 8.72x1010 c $m^{-2}$ e $V^{-1}$ . The low interface states were obtained from very low lattice mismatch less than 1.75%.