• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.990-995
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• 2005

This paper reports the fabrication and characterization of $5\;\times\;5$ thermal cantilever array for nano-scaled memory device application. The $5\;\times\;5$ thermal cantilever array with integrated tip heater has been fabricated with MEMS technology on SOI wafer using 7 photo masking steps. All single-level cantilevers have a diode in order to eliminate any electrical cross-talk between adjacent tips. Electrical measurements of fabricated thermal cantilever away show its own thermal heating mechanism. Thermal heating is demonstrated by the reflow of coated photoresist on the cantilever array surface.

• 대한의용생체공학회:의공학회지
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• 제9권2호
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• pp.225-232
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• 1988

Poly (L- lactic acid-co-glycine-L-lactic acid) and Poly (L-lactic acid-co-glycine-L- methyl lactic acid ) have been prepared by ring opening polymerization. The monomer 6, 6-dimethyl morpho-line-2, 5-dione was synthesized by the bromoisobutylation of 2-bromoisobutyryl bromide with glycin e. L-lactide, 6-methyl morpholine-2, 5-diode. and 6, 6-dimethyl morpholine-2, 5-diode have been used as starting materials for polydepsipeptides. The synthesized monomers and copolymers have been identified by NMR and FT-lR spa- ctrophotometer. The thermal propert ies and glass transition temperature(Tg) of the copolymers have been measured by differential scanning calorimetry. The Tg values of poly(L-lactic acid co-glycine-L-lactic acid) system are increased from $53^{\circ}C\; to\; 107^{\circ}C$ with increasing the mole fraction of 6-methyl morpholine-2, 5-diode. And the Tg values of poly(L-lactic acid co-glycine-L-methyl lactic acid) system are increased from $53^{\circ}C\;to\;138^{\circ}C$ with increasing the mole fraction of 6. 6-dimethyl morpholine-2, 5-diode The thermal stability of poly (L-lactic acid-co-glycine-L-methyl lactic acid) is slightly greta text than that of poly(L-lactic acid-co-glycine-L-lactic acid) due to the methyl group.

• Journal of Korean Dental Science
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• 제14권2호
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• pp.69-78
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• 2021

Purpose: The primary objective of this study was to evaluate the change in the temperature of the adhesive resin in polycrystalline ceramic brackets irradiated using a diode laser at different irradiation energy levels and times. Materials and Methods: For the measurement of the temperature of the adhesive resin, it was applied at the base of the ceramic bracket, a thermocouple was placed at the center of the base surface, the bracket was placed on prepared resin specimens for light curing, and a laser was irradiated to the center of the bracket slot at 5, 7, and 10 W. For the measurement of the temperatures of the enamel under the bracket and pulp cavity, extracted premolar was fixed to a prepared mold and the ceramic bracket was bonded to the buccal surface of the premolar. The Kruskal-Wallis H test and Friedman test were used for statistical analysis. Result: At 5 W, the temperature of the adhesive resin did not reach the resin softening temperature of 200℃ within 30 seconds. At 7 W, it reached 200℃ when the ceramic bracket was irradiated continuously for 28 seconds. At 10 W, it reached 200℃ when the ceramic bracket was irradiated continuously for 15 seconds. During laser irradiation, the temperature of the enamel under the bracket increased by over 5℃ within 15 seconds. Conclusion: The use of diode laser irradiation for bracket debonding should be carefully considered because the pulp cavity temperature increases by over 5℃ within the irradiation time for resin thermal softening.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.2449-2452
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• 2007

Hot spots on thin wafers of IC packages are becoming important issues in thermal and electrical engineering fields. To investigate these hot spots, we developed a Diode Temperature Sensor Array (DTSA) that consists of an array of 32 ${\times}$32 diodes (1,024 diodes) in a 8 mm ${\times}$ 8 mm surface area. To know specifically the hot spot temperature which is affected by the chip thickness and a generated power, we made the DTSA chips, which have 21.5 ${\mu}m$, 31 ${\mu}m$, 42 ${\mu}m$, 100 ${\mu}m$, 200 ${\mu}m$, and 400 ${\mu}m$ thickness using the CMP process. And we conducted the experiment using various heater power conditions (0.2 W, 0.3 W, 0.4 W, 0.5 W). In order to validate experimental results, we performed a numerical simulation. Errors between experimental results and numerical data are less than 4%. Finally, we proposed a correlation for the hot spot temperature as a function of the generated power and the wafer thickness based on the results of the experiment. This correlation can give an easy estimate of the hot spot temperature for flip chip packaging when the wafer thickness and the generated power are given.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권6호
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• pp.697-705
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• 2014

A single chip Programmable AC to DC Power Converter, consisting of wide band gap SiC MOSFET and SiC diodes, has been proposed which converts high frequency ac voltage to a conditioned dc output voltage at user defined given power level. The converter has high conversion efficiency because of negligible reverse recovery current in SiC diode and SiC MOSFET. High frequency operation reduces the need of bigger size inductor. Lead inductors are enough to maintain current continuity. A complete electrical analysis, die area estimation and thermal analysis of the converter has been presented. It has been found that settling time and peak overshoot voltage across the device has reduced significantly when SiC devices are used with respect to Si devices. Reduction in peak overshoot also increases the converter efficiency. The total package substrate dimension of the converter circuit is only $5mm{\times}5mm$. Thermal analysis performed in the paper shows that these devices would be very useful for use as miniaturized power converters for load currents of up to 5-7 amp, keeping the package thermal conductivity limitation in mind. The converter is ideal for voltage requirements for sub-5 V level power supplies for high temperatures and space electronics systems.

• 한국태양에너지학회 논문집
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• 제28권1호
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• pp.9-17
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• 2008

An experimental investigation has been carried out to study the effects of different working fluids on the behavior and thermal performance of a hi-directional thermodiode. The thermodiode was made up of two rectangular loops mounted between a collector plate and a radiator plate. Rotatable joints between the horizontal and inclined segments of the loops enable easy alteration of the direction of heat transfer. The loops and the tank were filled with a working fluid for effective heat transfer when the thermodiode was forwarded biased. Six different working fluids were tested with thermal conductivity values ranging from 0.1 to $0.56W/m-^{\circ}C$, thermal expansion coefficient values ranging from $1.8\;{\times}10^{-4}$ to $1.3\;{\times}\;10^{-3}\;K^{-1}$, and kinematic viscosity values ranging from $0.65\;{\times}\;10^{-6}$ to $100\;{\times}\;10^{-6}\;m^2/s$. Especially, mixtures of $Al_2O_3$ (30nm Particle) in deionized water have been tested for the volumetric ratios of 0.01, 0.02, 0.03, 0.1, 0.2%. Each experiment was carried out after the loop was filled with a working fluid for effective heat transfer and the thermodiode was forwarded biased. The solar thermodiode was heated by a radiant heater consisting of 20 halogen lamps that generated a heat flux of about $1000\;W/m^2$ on the collector surface. Results are given in terms of temperature development in different parts of the loop as heat is delivered from its hot end to the surrounding atmosphere by the radiator made of copper plates.

• ETRI Journal
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• 제32권2호
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• pp.339-341
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• 2010

The fundamental transverse mode lasing of a hybrid laser diode is a prerequisite for efficient coupling to a single-mode silicon waveguide, which is necessary for a wavelength-division multiplexing silicon interconnection. We investigate the lasing mode profile for a hybrid laser diode consisting of silicon slab and InP/InGaAsP deep ridge waveguides. When the thickness of the top silicon is 220 nm, the fundamental transverse mode is lasing in spite of the wide waveguide width of $3.7{\mu}m$. The threshold current is 40 mA, and the maximum output power is 5 mW under CW current operation. In the case of a thick top silicon layer (1 ${\mu}m$), the higher modes are lasing. There is no significant difference in the thermal resistance of the two devices.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2009년도 정기총회 및 추계학술대회 논문집
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• pp.222-224
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• 2009

3상 인버터의 PWM 구동시 인버터 파워모듈의 IGBT와 Diode에서는 도통 손실 및 스위칭 손실이 발생하며 이러한 손실은 소자의 정션 온도를 증가시킨다. 하이브리드 차량(HEV)의 경우 다양한 주행 조건에서 IGBT와 Diode가 제한 온도를 초과하지 않도록 해야한다. 본 연구에서는 순시 전압 및 전류에 대한 3상PWM 인버터의 손실을 계산하고 열모델을 통해 소자의 온도를 파악함으로써 하이브리드 차량의 성능 예측에 활용하였다. 열모델은 파워모듈 각 상의 IGBT와 Diode 사이의 상호 열전달을 고려하였으며 시험 결과와 시뮬레이션 결과 비교를 통해 열모델의 타당성을 살펴보았다. 제안된 모델을 통해 다양한 주행 조건에서 하이브리드 차량의 성능 분석을 실시하였다.

• Journal of Electrical Engineering and Technology
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• 제3권1호
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• pp.121-124
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• 2008

This paper presents the fabrication and field emission of carbon nanotube field emitters for a micro mass spectrometer. The carbon nanotube is an adequate material as a field emitter since it has good characteristics. We have successfully fabricated a diode field emitter and a triode field emitter. Each field emitter has been constructed using several micromachining processes and a thermal CVD process. In the case of the diode field emitter, to increase the electric field, the carbon nanotubes are selectively grown on the patterned nickel catalyst layer. The electron current of the diode field emitter is 73.2 ${\mu}A$ when the anode voltage is 1100V. That of the triode field emitter is 3.4 pA when the anode voltage is 1000V.

• 전자공학회논문지D
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• 제34D권11호
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• pp.20-24
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• 1997

We have successfully fabricated high power (~20W) laser diode array, which are useful for pumping Nd:YAG lasers. The laser diode aray has 20 100.mu.m-wide cahnnels of which space was adjusted to 350.mu.m to improve thermal characteristics. And channel width is 100.mu.m. For an uncoated LD array, the output power of 15.66W has been obtained at 41A under quasi-CW operation, which results in about 0.42W/A slope efficiency. After aR(5%) and HR (95%) coatings on both facets, the output power was improved up to 21.18W at 40A under the same operation as above and the slope efficiency was 0.795W/A. On the other hand, by using a near field measurement system consisting of objective lens, eyepiece, CCD camera and image processing board, the typical near field patten of 1*20 LD array was observed.