Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication of a AlGaAs high power (~20W) laser diode array

20W급 AlGaAs 레이저 다이오드 어레이의 제작

  • 박병훈 (포항공과대학교 전자전기공학과) ;
  • 손낙진 (포항공과대학교 전자전기공학과) ;
  • 배정훈 (포항공과대학교 전자전기공학과) ;
  • 권오대 (포항공과대학교 전자전기공학과)
  • Published : 1997.11.01
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Abstract

We have successfully fabricated high power (~20W) laser diode array, which are useful for pumping Nd:YAG lasers. The laser diode aray has 20 100.mu.m-wide cahnnels of which space was adjusted to 350.mu.m to improve thermal characteristics. And channel width is 100.mu.m. For an uncoated LD array, the output power of 15.66W has been obtained at 41A under quasi-CW operation, which results in about 0.42W/A slope efficiency. After aR(5%) and HR (95%) coatings on both facets, the output power was improved up to 21.18W at 40A under the same operation as above and the slope efficiency was 0.795W/A. On the other hand, by using a near field measurement system consisting of objective lens, eyepiece, CCD camera and image processing board, the typical near field patten of 1*20 LD array was observed.

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