• Polymer(Korea)
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• v.38 no.2
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• pp.232-239
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• 2014

Poly(lactic acid)(PLA) nanocomposites containing various nanofillers were synthesized using the solution intercalation method. Organically modified bentonite clay (NSE), octadecylamine-graphene oxide (ODA-GO), and an NSE/ODA-GO complex were utilized as nanofillers in the fabrication of PLA hybrid films. PLA hybrid films with varying nanofiller contents in the range of 0-10 wt% were examined and compared in terms of their thermomechanical properties, morphologies, and oxygen permeabilities. Transmission electron microscopy (TEM) confirmed that most of the NSE and ODA-GO nanofillers were dispersed homogeneously throughout the PLA matrix on the nanoscale, although some agglomerate NSE/ODA-GO complex particles were also formed. Among the three nanofillers for PLA hybrid films, the NSE/ODA-GO complex showed the best improvement in film thermal stability. In contrast, NSE and ODA-GO exhibited the best improvement in tensile mechanical properties and oxygen barrier properties of the PLA hybrid films, respectively.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.174-181
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• 2003

Ta diffusion barriers have been deposited on Si (100) substrate by applying a negative substrate bias voltage. The effect of the substrate bias voltage on the properties of the Ta films was investigated. In the case of the Ta films deposited without the substrate bias voltage, a columnar structure and small grains were observed distinctly, and the electrical resistivity of the deposited Ta films was very high (250 $\mu\Omega$cm). By applying the substrate bias voltage, no clear columnar structure and grain boundary were observed. The resistivity of the Ta films decreased remarkably and at a bias voltage of -125 V, reaching a minimum value of 40 $\mu\Omega$cm, which is close to that of Ta bulk (13 $\mu\Omega$cm). The thermal stability of Cu(100 mm)/Ta(50 mm)/Si structures was evaluated after annealing in H2 atmosphere for 60 min at various temperatures. The Ta films deposited by applying the substrate bias voltage were found to be stable up to $600^{\circ}C$, while the Ta films deposited without the substrate bias voltage degraded at $400^{\circ}C$.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.3 no.4
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• pp.349-358
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• 2005

In this study, analysis of the disposal tunnel spacing and disposal pit pitch was carried out, as a factor of the design to estimate the scale and layout of the repository. To do this, based on the reference repository concept and the engineered barrier concept, several cross sections of the disposal tunnel and disposal pit were established. After then, the mechanical and thermal stabilities of the established tunnels were analyzed. Also, an optimized disposal tunnel spacing and the disposal pit pitch reducing the excavation volume was proposed. The results of these analyses can be used in the deep geological repository design. The detailed analyses by the exact site characteristics data to reduce the uncertainty of the site and the modification for the optimization are required.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.145-145
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• 2011

Light-emitting diodes (LEDs) based on III-nitrides compound semiconductors have achieved a high performance device available for display and illumination sector. However, the conventional c-plane oriented LED structures are still showing several problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. The QCSE results in spatial separation of electron and hole wavefunctions in quantum wells, thereby decreasing the internal quantum efficiency and red-shifting the emission wavelength. Due to demands for improvement of device performance, nonpolar structure has been attracting attentions, since the quantum wells grown on nonpolar templates are free from the QCSE. However, current device performance for nonpolar LEDs is still lower than those for conventional LEDs. In this study, we discuss the potential possibilities of nonpolar LEDs for commercialization. In this study, we characterized current-light output power relation of the a-plane InGaN/GaN LEDs structures with the variation of quantum well structures. On-wafer electroluminescence measurements were performed with short pulse (10 us) and low duty factor (1 %) conditions applied for eliminating thermal effects. The well and barrier widths, and indium compositions in quantum well structures were changed to analyze the efficiency droop phenomenon.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.53-53
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• 2011

As the dimension of Cu interconnects has continued to reduce, its resistivity is expected to increase at the nanoscale due to increased surface and grain boundary scattering of electrons. To suppress increase of the resistivity in nanoscale interconnects, alloying Cu with other metal elements such as Al, Mn, and Ag is being considered to increase the mean free path of the drifting electrons. The formation of Al alloy with a slight amount of Cu broadly studied in the past. The study of Cu alloy including a very small Al fraction, by contrast, recently began. The formation of Cu-Al alloy is limited in wet chemical bath and was mainly conducted for fundamental studies by sputtering or evaporation system. However, these deposition methods have a limitation in production environment due to poor step coverage in nanoscale Cu metallization. In this work, gap-filling of Cu-Al alloy was conducted by cyclic MOCVD (metal organic chemical vapor deposition), followed by thermal annealing for alloying, which prevented an unwanted chemical reaction between Cu and Al precursors. To achieve filling the Cu-Al alloy into sub-100nm trench without overhang and void formation, furthermore, hydrogen plasma pretreatment of the trench pattern with Ru barrier layer was conducted in order to suppress of Cu nucleation and growth near the entrance area of the nano-scale trench by minimizing adsorption of metal precursors. As a result, superconformal gap-fill of Cu-Al alloy could be achieved successfully in the high aspect ration nanoscale trenches. Examined morphology, microstructure, chemical composition, and electrical properties of superfilled Cu-Al alloy will be discussed in detail.

• Journal of Powder Materials
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• v.20 no.6
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• pp.453-459
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• 2013

Lanthanum/gadolinium zirconate coatings are deposited via suspension plasma spray with suspensions fabricated by a planetary mill and compared with hot-pressed samples via solid-state reaction. With increase in processing time of the planetary mill, the mean size and BET surface area change rapidly in the case of lanthanum oxide powder. By using suspensions of planetary-milled mixture between lanthanum or gadolinium oxide and nano zirconia, dense thick coatings with fully-developed pyrochlore phases are obtained. The possibilities of these SPS-prepared coatings for TBC application are also discussed.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.14 no.2
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• pp.135-147
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• 2016

The buffer in geological disposal system is one of the major elements to restrain the release of radionuclide and to protect the container from the inflow of groundwater. The buffer material requires long-term stability, low hydraulic conductivity, low organic content, high retardation of radionuclide, high swelling pressure, and high thermal conductivity. These requirements could be determined by the quantitative analysis results. In case of South Korea, the bentonites produced in Gyeongju area have been regarded as candidate buffer/backfill materials at KAERI (Korea Atomic Energy Research Institute) since 1997. According to the study on several physical and chemical characteristics of domestic bentonite in the same district, this is the Ca-type bentonite with about 65% of montmorillonite content. Through this study, we present the criteria for the performance evaluation items and methods when collecting new buffer/backfill materials.

• Polymer(Korea)
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• v.37 no.2
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• pp.225-231
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• 2013

Poly(vinyl alcohol) (PVA) hybrid films containing 5 wt% pristine clay mineral were synthesized in the water solution. The various PVA hybrid films were synthesized from structurally different pristine clays: saponite (SPT), montmorillonite (MMT), hectorite (SWN), hydrophilic bentonite (PGV), and mica (Mica). The thermo-optical properties and morphologies of the PVA hybrid films were evaluated with various pristine clays. The nanostructure of the hybrid films was observed using transmission electron microscopy, which showed that the clay layers were well dispersed into the matrix polymer, although some clusters or agglomerated particles were also detected. The addition of pristine clay was more effective with regard to improving the thermal properties and gas barrier characteristics, whereas the optical transparency of the PVA hybrid films deteriorated with pristine clay.

• Journal of the Speleological Society of Korea
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• no.76
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• pp.37-42
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• 2006

The Dielectric Barrier Discharge (DBD) is a nonequilibrium gas discharge that is generated in the space between two electrodes, which are separated by an insulating dielectric layer. The dielectric layer can be put on either of the two electrodes or be inserted in the space between two electrodes. If an AC or pulse high voltage is applied to the electrodes that is operated at applied frequency from 50Hz to several MHz and applied voltages from a few to a few tens of kilovolts rms, the breakdown can occur in working gas, resulting in large numbers of micro-discharges across the gap, the gas discharge is the so called DBD. Compared with most other means for nonequilibrium discharges, the main advantage of the DBD is that active species for chemical reaction can be produced at low temperature and atmospheric pressure without the vacuum set up, it also presents many unique physical and chemical process including light, heat, sound and electricity. This has led to a number of important applications such as ozone synthesizing, UV lamp house, CO2 lasers, et al. In recent years, due to its potential applications in plasma chemistry, semiconductor etching, pollution control, nanometer material and large area flat plasma display panels, DBD has received intensive attention from many researchers and is becoming a hot topic in the field of non-thermal plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.21-21
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• 2010

(Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.