• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1418-1419
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• 2011

차세대 전력 반도체인 고전압 GaN 쇼트키 장벽 다이오드의 역방향 특성을 개선하기 위해서 열 산화공정이 제안되었다. AlGaN/GaN 에피탁시 위에 쇼트키 장벽 다이오드 구조가 제작되었으며, 쇼트키 컨택은 증착 후 $450^{\circ}C$에서 산화되었다. 열 산화공정이 메사 측벽의 AlGaN 및 GaN 표면에 $AlO_x$ 및 $GaO_x$를 형성하여 표면으로 흐르는 누설전류를 억제한다. 표면 및 GaN 버퍼를 통한 누설전류는 열 산화 공정 이후 100 ${\mu}m$-너비당 51.3 nA에서 24.9 pA로 1/2000 배 수준으로 감소하였다. 표면 산화물 형성으로 인하여 생성된 Ga-vacancy와 Al-vacancy는 acceptor로 동작하여 surface band bending을 증가시켜 쇼트키 장벽 높이를 증가시킨다. 애노드-캐소드 간격이 5 ${\mu}m$인 제작된 소자는 0.99 eV의 높은 쇼트키 장벽 높이를 획득하여, -100 V에서 0.002 A/$cm^2$의 낮은 누설전류를 확보하였다. 애노드-캐소드 간격이 5에서 10, 20, 50 ${\mu}m$로 증가되면 소자의 항복전압은 348 V에서 396, 606, 941 V로 증가되었다. 열 산화공정은 전력용 GaN 전자소자의 누설전류감소와 항복전압 증가를 위한 후처리 공정으로 적합하다.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.2
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• pp.226-233
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• 1999

An experimental study has been performed on natural convection heat transfer with a rapid crust formation in the molten metal pool of a low Prandtl number fluid. Two types of steady state tests, a low and high geometric aspect ratio cases in the molten metal pool, were performed. The crust thickness by solidification was measured 88 a function of boundary surface temperatures. The experimental results on the relationship between the Nusselt number and Rayleigh number In the molten metal pool with a crust formation were compared with existing correlations. The experimental study has shown that the bottom surface temperature of the molten metal layer, in all experiments. is the major influential parameter in the crust formation, duo to the natural convection flow. The Nusselt number of the case without a crust formation in the molten metal pool is greater than that of the case with the crust formation at the same Rayleigh number. The present experimental results on the relationship between the Nusselt number and Rayleigh number In the molten metal pool match well with Globe and Dropkin's correlation. From the experimental results, a now correlation between the Nusslet number and Rayleigh number in the molten metal pool with the crust formation was developed as $Nu=0.0923(Ra)^{0.302}$ ($2{\times}10^4< Ra<2{\times}10^7$).

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.305-308
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• 2006

Advanced mobile communication devices require a bright, high information content display in a small, light-weight, low power consumption package. For portable applications flexible (or conformable) and rugged displays will be the future. In this paper we outline our progress towards developing such a low power consumption active-matrix flexible OLED $(FOLED^{TM})$ display. We demonstrate full color 100 ppi QVGA active matrix OLED displays on flexible stainless steel substrates. Our work in this area is focused on integrating three critical enabling technologies. The first technology component is based on UDC's high efficiency long-lived phosphorescent OLED $(PHOLED^{TM})$ device technology, which has now been commercially demonstrated as meeting the low power consumption performance requirements for mobile display applications. Secondly, is the development of flexible active-matrix backplanes, and for this our team are employing PARC's Excimer Laser Annealed (ELA) poly-Si TFTs formed on metal foil substrates as this approach represents an attractive alternative to fabricating poly-Si TFTs on plastic for the realization of first generation flexible active matrix OLED displays. Unlike most plastics, metal foil substrates can withstand a large thermal load and do not require a moisture and oxygen permeation barrier. Thirdly, the key to reliable operation is to ensure that the organic materials are fully encapsulated in a package designed for repetitive flexing, and in this device we employ a multilayer thin film Barix encapsulation technology in collaboration with Vitex systems. Drive electronics and mechanical packaging are provided by L3 Displays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.150-150
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• 2008

본 연구에서는 Wet chemistry damage가 Nanopatterned p-ohmic electrode에 미치는 영향을 연구하였다. Nanopattern은 Metal clustering을 이용하여, P-GaN와 Ohmic형성에 유리한 Pd을 50$\AA$ 적층한 후 Rapid Thermal Annealing방법으로 $850^{\circ}C$, $N_2$분위기에서 3min열처리를 하여 Pd Clustering mask 를 제작하였다. Wet etching은 $85^{\circ}C$, $H_3PO_4$조건에서 시간에 따라 Sample을 Dipping하는 방법으로 시행하였다 Ohmic test를 위해서 Circular - Transmission line Model 방법을 이용하였으며, Atomic Force Microscopy과 Parameter Analyzer로 Nanopatterned GaN surface위에 형성된 Ni/ Au Contact에서의 전기적 분석과, 표면구조분석을 시행하였다. AFM결과 Wet처리시간에 따라서 Etching형상 및 Etch rate이 영향을 받는 것이 확인되었고, Ohmic test에서 Wet chemistry처리에 의한 Tunneling parameter와 Schottky Barrier Height가 크게 증/감함을 관찰하였다. 이러한 결과들은 Wet처리에 의해서 발생된 Defect가 GaN의 표면과 하부에서 발생되며, Deep acceptor trap 및 transfer거동과 밀접한 관련이 있음을 확인 할 수 있었다. 보다 자세한 Transport 및 Wet chemical처리영향에 관한 형성 Mechanism은 후에 I-V-T, I-V, C-V, AFM결과 들을 활용하여 발표할 예정이다.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.25-29
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• 2014

In this study, an optical PCB was proposed which can overcome the limitations of the conventional PCB, and a new structure with pluggable lens was considered for a high-efficient passive alignment. The structure was a lens-added optical waveguide for the improvement of misalignment between the lens and the waveguide in the alignment. Also, as it had a barrier-type structure to prevent the surface damage of the lens by desorption, the high-efficient passive alignment can be realized. The structure was designed by optimizing the simulation and the fabrication process of the pluggable lens structure was conducted using the repetitive photolithography and the thermal reflow. The optical waveguide with the lens-integrated pluggable interconnection was fabricated by the imprint process using the polydimethylsiloxane(PDMS) replica mold. Therefore, we confirmed the possibility of pluggable lens-added optical waveguide structure fabrication for high-efficient passive alignment.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.33-37
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• 2008

A noticeable amount of Kirkendall voids formed at the Sn-3.5Ag solder joint with electroplated Cu, and that became even more significant when an additive was added to Cu electroplating bath. With SPS, a large amount of voids formed at the $Cu/Cu_3Sn$ interface of the solder joint during thermal aging at $150^{\circ}C$. The in-situ AES analysis of fractured joints revealed S segregation on the void surface. Only Cu, Sn, and S peaks were detected at the fractured $Cu/Cu_3Sn$ interfaces, and the S peak decreased rapidly with AES depth profiling. The segregation of S at the $Cu/Cu_3Sn$ interface lowered interface energy and thereby reduced the free energy barrier for the Kirkendall void nucleation. The drop impact test revealed that the electrodeposited Cu film with SPS degraded drastically with aging time. Fracture occurred at the $Cu/Cu_3Sn$ interface where a lot of voids existed. Therefore, voids occupied at the $Cu/Cu_3Sn$ interface are shown to seriously degrade drop reliability of solder joints.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.5
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• pp.229-238
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• 2015

The effects of Sn addition and solution treatment on corrosion behavior were studied in AZ91 magnesium casting alloy. The addition of 5%Sn contributed to the introduction of $Mg_2Sn$ phase, to the reduction in dendritic cell size and to the increase in the amount of secondary phases. After the solution treatment, trace amount of $Al_8Mn_5$ particles were observed in the ${\alpha}$-(Mg) matrix for the AZ91 alloy, while $Mg_2Sn$ phase with high thermal stability was additionally found in the AZ91-5%Sn alloy. Before the solution treatment, the AZ91-5%Sn alloy had better corrosion resistance than the Sn-free alloy, which is caused by the enhanced barrier effect of the (${\beta}+Mg_2Sn$) phases formed more continuously along the dendritic cell boundaries. It is interesting to note that after the solution treatment, the corrosion rate of both alloys became increased, but the Sn-added alloy showed higher corrosion rate than the Sn-free alloy. The microstructural examination on the corroded surfaces revealed that the remaining $Mg_2Sn$ particles in the solution-treated AZ91-5%Sn alloy play a role in accelerating corrosion by galvanic coupling with the ${\alpha}$-(Mg) matrix.

• 한국해양학회지
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• v.21 no.3
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• pp.146-155
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• 1986

Zooplankton samples of upper 50m layer in May, 1985 and of various depth intervals depending on thermal structure in October, 1985 were analyzed. Standing stock represents mean of 538inds/㎥ in spring and 267 inds/㎥ and 508inds/㎥ of whole column mean and surface layer in fall, respectively. A total of 55 and 104taxa is identified in each season and accumulated data list at least 123 species inhabiting in the study area. Copepods dominate in the zooplankton community, followed by protozoans and appendicularians in both seasons. In surface layer, distribution of subtropical species and standing stock seems to illuminate the effects of the Tsushima Current and the North Korean Cold Watermass in cold season, whereas only standing stock shows discernable variation in warm season. Concerning whole water column, depth of permanent thermocline bottom, at about 120m in fall 1985, plays significant role as a barrier to the distribution of mesopelagic cold water species. Serial sampling in October, 1985 does not reveal any perceivable diel vertical migration, which is considered to confirm the earlier suggest that owing to the lack of true abyssal species zooplankton biomass of deeper gayer is very poor, so that diel vertical migration of the East Sea is weak.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.117-122
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• 2005

Electron Beam Physical Vapor Deposition (EB-PVD) is a typical technology for thermal barrier coating with Yttria Stabilized Zirconia (YSZ) on aero gas turbine engine. In this study EB-PVD method was used to fabricate dense YSZ film on NiO-YSZ as a electrolyte of Solid Oxide Fuel Cell (SOFC). Dense YSZ films of -10 $\mu$m thickness showed nano surface structure depending on deposition temperature. Electrical conductivities of YSZ film and electric power density of the single cell were evaluated after screen- printing $LaSrCoO_3$ as a cathode.

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.23-30
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• 1997

Semiconductive SrTiO3 ceramic bodies were prepared by conventional ceramic powder processes in-cluding sintering in a reducing atmosphere. Sodium or potassium ions were diffused from the surface of the sintered bodies into the inner region using thermal diffusion process at 800-120$0^{\circ}C$. The effects of such ther-mal treatments on the electrical and chemical characteristics of the grain boundaries were investigated. The presence of sodium or potassium ions at grain boundaries produces non-linear current-voltage behaviors, electrical boundary potential barriers of 0.1-0.2eV, and threshold voltages of 10-70V. The diffused ions form diffusion layers with thicknesses of 20-50nm near the grain boundaries, reducing the concentration of strontium and oxygen.