• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.375-375
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• 2010

CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.

• Korean Journal of Optics and Photonics
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• v.18 no.5
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• pp.351-361
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• 2007

The samples composed of a GST thin film and the protective layers of $ZnS-SiO_2$ or $Al_2O_3$ coated on c-Si substrate were prepared by using the magnetron sputtering method. Samples of three different structures were prepared, that is, i) the GST single film on c-Si substrate, ii) the GST film sandwiched by the protective $ZnS-SiO_2$ layers on c-Si substrate, and iii) the GST film sandwiched by $Al_2O_3$ protective layers on c-Si substrate. The ellipsometric constants in the temperature range from room temperature to $700^{\circ}C$ were obtained by using the in-situ ellipsometer equipped with a conventional heating chamber. The measured ellipsometric constants show strong variations versus temperature. The variation of ellipsometric constants at the temperature region higher than $300^{\circ}C$ shows different behaviors as the ambient medium is changed from in air to in vacuum or the protective layers are changed from $ZnS-SiO_2$ to $Al_2O_3$. Since the long heating time of 1-2 hours is believed to be the origin of the high temperature variation of ellipsometric constants upon the heating environment and the protective layers, a PRAM (Phase-Change Random Access Memory) recorder is introduced to reduce the heating time drastically. By using the PRAM recorder, the GST samples are heated up to $700^{\circ}C$ decomposed preventing its partial evaporation or chemical reactions with adjacent protective layers. The surface image obtained by SEM and the surface micro-roughness verified by AFM also confirmed that samples prepared by the PRAM recorder have smoother surface than the samples prepared by using the conventional heater.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.288-295
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• 2009

We report the etch characteristics of GaAs and AlGaAs in the diffusion pump-based capacitively coupled $BCl_3$ plasma. Process variables were chamber pressure ($50{\sim}180$ mTorr), CCP power ($50{\sim}200\;W$) and $BCl_3$ gas flow rate ($2.5{\sim}10$ sccm). Surface profilometry was used for etch rate and surface roughness measurement after etching. Scanning electron microscopy was used to analyze the etched sidewall and surface morphology. Optical emission spectroscopy was used in order to characterize the emission peaks of the $BCl_3$ plasma during etching. We have achieved $0.25{\mu}m$/min of GaAs etch rate with only 5 sccm $BCl_3$ flow rate when the chamber pressure was in the range of 50{\sim}130 mTorr. The etch rates of AlGaAs were a little lower than those of GaAs at the conditions. However, the etch rates of GaAs and AlGaAs decreased significantly when the chamber pressure increased to 180 mTorr. GaAs and AlGaAs were not etched with 50 W CCP power. With $100{\sim}200\;W$ CCP power, etch rates of the materials increased over $0.3{\mu}m$/min. It was found that the etch rates of GaAs and AlGaAs were not always proportional to the increase of CCP power. We also found the interesting result that AlGaAs did not etched at 2.5 sccm $BCl_3$ flow rate at 75 mTorr and 100 W CCP power even though it was etched fast like GaAs with more $BCl_3$ gas flow rates. By contrast, GaAs was etched at ${{\sim}}0.3{\mu}m$/min at the 2.5 sccm $BCl_3$ flow rate condition. A broad molecular peak was noticed in the range of $500{\sim}700\;mm$ wavelength during the $BCl_3$ plasma etching. SEM photos showed that 10 sccm $BCl_3$ plama produced more undercutting on GaAs sidewall than 5 sccm $BCl_3$ plasma.

• Journal of the korean academy of Pediatric Dentistry
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• v.34 no.3
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• pp.408-419
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• 2007

In the child, it is very important that he/she will have the ability to suppress aesthetic restorative materials of secondary caries. With the representative preventive material against caries, the importance of fluoride is more emphasized. This study examined the differences in fluoride release and re-uptake among some restorative materials, following a treatment of APF gel and fluoride varnish. The surface roughness was observed under scanning electron microscope. Studying this will provide for the research to find effective restorative materials and fluoride type in tooth caries prevention. It is applied from presence at a clinic that restorative materials are resin, flowable resin, compomer and glass ionomer. Fluoride release was measured at 24-hour intervals for 7 days, 3-day intervals from 8th to 38th day using an ion-selective electrode and analyzer. Then, the materials were treated with the fluoride gel and fluoride varnish respectively, fluoride release was measured and specimens were evaluated under scanning electron microscope for 4 weeks. It was concluded that 1. Fluoride was released for 38 days from restorative materials under 1 ppm in case of flowable resin, 1-2 ppm in compomer and 2-8 ppm in glass ionomer, a few of fluoride was released after 45 days 2. Fluoride has more releasing after application of APF gel than fluoride varnish. Fluoride re-uptake was observed under 0.6-0.2 ppm in fluoride varnish and 0.6-2.6 ppm in APF gel after starting the procedure one day(p<0.05). For the remaining 4 weeks, they demonstrated a similar release. 3. Specimens were evaluated under scanning electron microscope. Applied fluoride in the experimental group surface was rougher than the control group that did not receive fluoride application. Fluoride varnish group had a smoother surface than both the APF gel group and the varnish APF gel group that received a fluoride application.

• The Journal of Korean Academy of Prosthodontics
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• v.51 no.3
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• pp.190-198
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• 2013

Purpose: The purposes of this study were to investigate osseointegration around zirconia implants which had machined or alumina sandblasted surface, and to compare the results with titanium implants. Materials and methods: The study was performed on the tibia of 6 pigs. Three types of implants were investigated: group T-titanium implant, group Z-machined zirconia implant, group ZS-alumina sandblasting treated zirconia implant. Zirconia implants were manufactured from yttria-stabilized tetragonal zirconia polycrystalline (Acucera Inc., Pocheon, Korea). A total of 36 implants were installed in pigs' tibias. After 1, 4 and 12 weeks of healing period, the periotest and the histomorphometric analysis were performed. The data were analyzed using one-way ANOVA and significance was assessed by the Scheffe test (${\alpha}=.05$). Results: In the measurement of surface roughness, highest Ra value was measured in group T with significant difference. No significant differences were found among groups regarding Periotest values. After 1 week, in comparison of bone to implant contact (BIC), group Z showed higher value with significant difference. In comparison of bone area (BA), group T and group Z showed higher value with significant difference than group ZS. After 4 weeks, in comparison of BIC, group T showed higher value with significant difference. Comparison of BA showed no significant difference among each implant. After 12 weeks, the highest mean BIC values were found in group T with significant difference. Group ZS showed higher BIC value with significant difference than group Z. In comparison of BA, group T and group ZS showed higher value with significant difference than group Z. Conclusion: Zirconia implant showed low levels of osseointegration in this experiment. Modification of surface structure should be taken into consideration in designing zirconia implants to improve the success rate.

• The Journal of Korean Academy of Prosthodontics
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• v.52 no.1
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• pp.1-8
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• 2014

Purpose: The purpose of this study is to evaluate the effect of applying Silano-pen to feldspathic porcelain and zirconia on shear bond strength with composite resin. Materials and methods: Feldspathic porcelain and zirconia specimens were produced into 30 per each 2 mm thick and 12 mm in diameter and their surface was made smooth and even and then embedded in acrylic resin. The specimens were divided into each Group F (Feldspathic porcelain) and Group Z (Zirconia), (1) Hydrofluoric acid etching and silane (F1 & Z1), (2) Silano-pen and silane (F2 & Z2), (3) Hydrofluoric acid etching and Silano-pen, silane (F3 & Z3). After surface conditioning, substrate surfaces of the specimen were examined by SEM. Composite resin cylinders (2 mm high, 3 mm in diameter)were bonded to specimen and shear bond strength between ceramic and composite resin was measured by using universal testing machine. The measured values were statistically analyzed by using two way ANOVA and Tukey's multiple comparison test (${\alpha}=.05$). Results: In the scanning electron micrograph of the treated ceramic surface, Group F2 and F3 appeared the high roughness and Group Z3 appeared the highest density of silica particle. In Feldspathic porcelain, the result of measuring shear bond strength showed that Group F3 was measured to be highest and Group F1 was measured to be lowest but there was no statistical significance among Groups. In zirconia, Group Z3 was measured to be highest and Group Z1 was measured to be lowest and there was statistical significance among Groups (P<.05). Conclusion: In zirconia, applying hydrofluoric acid etching and then Silano-pen and silane is effective for composite resin adhesion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.5
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• pp.500-504
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• 2023

In this study, the heteroepitaxial thin film growth of β-Ga₂O₃ was studied according to the position of the susceptor in mist-CVD. The position of the susceptor and substrate was moved step by step from the center of the hot zone to the inlet of mist in the range of 0~50 mm. It was confirmed that the average thickness increased to 292 nm (D1), 521 nm (D2), and 580 nm (D3) as the position of the susceptor moved away from the center of the hot zone region. The thickness of the lower region of the substrate is increased compared to the upper region. The surface roughness of the lower region of the substrate also increased because the nucleation density increased due to the increase in the lifetime of the mist droplets and the increased mist density. Therefore, thin film growth of β-Ga₂O₃ in mist-CVD is performed by appropriately adjusting the position of the susceptor (or substrate) in consideration of the mist velocity, evaporation amount, and temperature difference with the substrate, thereby determining the crystallinity of the thin film, the thickness distribution, and the thickness of the thin film. Therefore, these results can provide insights for optimizing the mist-CVD process and producing high-quality β-Ga₂O₃ thin films for various optical and electronic applications.

• Journal of Korean Biological Nursing Science
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• v.2 no.2
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• pp.20-37
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• 2000

The purpose of this study was to investigate the relationships between the differentials in life styles and their effect on the epidermal facial tissue in order to provide a basis for health professionals so that they might better be able to maintain and promote healthy skin care and further delay the premature ageing of the epidermal facial tissue. The subjects consisted of 145 females of various ages who visited skin care room in cerming health promoting behaviors(Park In sook's Profile) and questions on their behavioral practices pertaining to personal skin care were used. The investigation also ess of the four parts of the epidermal facial tissue studied. All data collected wee entered into the SAS program and analyzed for frequency, percentages, the utilized Pusan. The study dates ranged from May 1, 1998 to May 30, 1998. The methods used for this investigation were a questionnaire survey consisting of general objective questions. The questions con a "skin analyzer" to measured levels of moisturizing hydrated, facial oils, and roughnmean, t-test, ANOVA, and Pearson Correlation Coefficients. The results of this study were as follows ; 1. Epidermal facial oil was at its highest levels in the chin area with additional decreasing levels in the forehead and nose regions. The least regions were those of the cheeks. The highest levels of hydration on the other hand started with the forehead followed by the area of the chin, the cheeks and the lowest level of epidermal facial hydration was in the region of the nose. 2. The average score of the performance in the health promoting behaviors variable was 139.51. The variables with the highest degree of the performance were rest and sleeping(35.71). The lowest degree was hiegenic life(23.44). 3. The relationship health promoting behaviors and epidermal condition was not correlated with oil, hydration and roughness of the skin surface. 4. Skin care behavioral characteristics related to epidermal condition were washing style and temperature of washing water. 5. General characteristics related to epidermal condition were occupation, education level, acne and melasma. In conclusion, this study showed that several factors were significant in the behavior of skin care. Clear knowledge of both internal and external factors which affect the epidermal condition will help women to pursue active and appropriate practices in their health behaviors and skin care.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.11 no.1
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• pp.23-32
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• 2008

In order to discern the development of technology in creating, properly managing, and characterizing the types used in facade greening, this article examines the instances of facade greening of Bulgaria, Greece and Turkey which is not only located in the latitude similar to South Korea's but also influenced by the both continental and oceanic climate. The study was carried out for 11 months from October 2002 to September 2003. The total 242 places were researched and they were 83 sites in Athens, 77 sites in Istanbul, and 82 sites in Sofia. Varieties, usage, configuration, foundation and characteristics of plants were studied. The goals of greening, and building's surface roughness and thickness, direction of the wall were also researched. The result of survey are as follows; 17 families and 33 species of climbing plants were found in Athens, Istanbul, and Sofia. Thickness of facade greening in the three cities is 46cm in Athens, 39cm in Istanbul, and 53cm in Sofia. The possible facade greening size per a climbing plant, Parthenocissus tricupidata takes up the largest portion of the wall in the three cities similarly followed by Vitis vinifera and Wistaria spp. By its diversity it can be assumed that these plants are most practical for large scale of facade greening and full covering. Evergreen climbing plants such as Hedera helix and Ficus niponica are useful plants for relatively large scale of facade greening area. In the facade greening types, the climbing type is the most dominant in the three cities and most of the climbing type was planted on the natural foundation but the hanging and combination types were planted on an artificial foundation located on the balcony or on the roof of the building. In the directions of the walls for facade greening, the west direction are most popular which is for the improvement of sun shading in summer season. In Sofia the apartments were most applied with facade greening but In Istanbul and Athens the residential buildings and the public buildings were adapted with facade greening actively as well as residential building. The purpose of lowering summer heat took up the highest portion followed by the purpose of ornamentation and maintaining privacy in all surveyed cities.