• Journal of Korea Water Resources Association
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• v.55 no.10
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• pp.823-833
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• 2022

This study aims to improve the runoff modeling accuracy of a basin using Hydrological Simulation Program-FORTRAN (HSPF) model by considering nonhomogeneous characteristics of a basin. By entering classified values according to the various types of land cover and soil to the parameters in HSPF-roughness coefficient (NSUR), infiltration (INFILT), and evapotranspiration (LZETP)- the heterogeneity of the Yongdam Dam basin was reflected in the model. The results were analyzed and compared with the one where the parameters were set as a single value throughout the basin. The flow rate and water quality simulation results showed improved results when classified parameters were used by land cover and soil type than when single values were used. The parameterization changed not only the flow rate, but also the composition ratio of each hydrologic components such as surface runoff, baseflow, and evapotranspiration, which shows the impact of the value set to a parameter on the entire hydrological process. This implies the importance of considering the heterogeneous characteristics of the land cover and soil of the basin when setting the parameters in a model.

• Journal of Korea Water Resources Association
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• v.44 no.2
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• pp.157-167
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• 2011

A numerical model was developed to predict the stage-discharge curve and lateral distribution of unit discharge in open channels with nonuniform cross section or compound open-channels. The governing equation is the one-dimensional momentum equation based on assumptions of the steady and uniform flow conditions in the longitudinal direction and the uniform water surface elevation in a cross section. Vegetative drag force term was included in governing equation in order to reflect the effect of floodplain vegetation on the flow characteristics. Finite element method was applied to obtain the numerical solution of the governing equation. Stage-discharge curve and lateral distribution of unit discharge for a given water surface are calculated based on input data, such as the cross sectional geometry, Manning's roughness coefficient, vegetative information and longitudinal slope of channel bed. The developed model was verified by comparing the calculated results with the observed data and the results of Darby and Thorne's(1996) model and the nonlinear k-$\epsilon$ model. The verified model was applied to estimate the upstream boundary conditions in two-dimensional flow model. The numerical results using laterally distributed unit discharge were compared with those obtained using uniformly distributed unit discharge in two-dimensional flow model.

• Journal of the Korean Wood Science and Technology
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• v.46 no.3
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• pp.221-230
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• 2018

The purpose of this study was to evaluate the effect of several chemical treatments to prevent photodegradation of wood veneer by external UV (Ultraviolet) light. Of woods, walnut veneer is selected as a raw material for this study since it is known as a luxurious wood with dark color giving an esthetic effect. Alcohol-benzene, hydrogen peroxide ($H_2O_2$) and sodium hypochlorite (NaClO) solution were used for investigate the effect on color stabilization. Despite the removal of the extractive compounds, which is known as a discoloration component, a significant color change of walnut wood veneer was observed. Meanwhile, the veneers treated by 20 and 30% $H_2O_2$ solution at $75^{\circ}C$ for 1 h also showed the no positive effect of color stability exposed to UV light although they have a bleaching effect on wood veneer. Besides, it was difficult to maintain the original color of walnut veneer due to the elution of the extractive compounds. On the other hands, the veneer treated by NaClO solution indicated the good performance on color stability despite of the intensive UV light test. However, when the concentration exceeds 3%, surface roughness and fiber damage occurred simultaneously. Therefore, the walnut species should be treated with proper concentration when sodium hypochlorite is applied to the veneer.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.11
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• pp.1381-1389
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• 2012

The object of this study considers corrosion fatigue improvement of 7075-T6 aluminum by using shot peening treatment on 3.5% NaCl solution at room temperature. Aluminum alloy is generally used in aerospace structural components because of the light weight and high strength characteristics. Many studies have shown that an aluminum alloy can be approximately 50% lighter than other materials. Mostly, corrosion leads to earlier fatigue crack propagation under tensile conditions and severely reduces the life of structures. Therefore, the technique to improve material resistance to corrosion fatigue is required. Shot peening technology is widely used to improve fatigue life and other mechanical properties by induced compressive residual stress. Even the roughness of treated surface causes pitting corrosion, the compressive residual stress, which is induced under the surface layer of material by shot peening, suppresses the corrosion and increases the corrosion resistance. The experimental results for shot peened specimens were compared with previous work for non treated aluminum alloy. The results show that the shot peening treatment affects the corrosion fatigue improvement of aluminum alloys and the induced compressive residual stress by shot peening treatment improves the resistance to corrosion fatigue.

• Journal of the Korean Magnetics Society
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• v.9 no.2
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• pp.111-120
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• 1999

The effects of annealing in rotating magnetic field after deposition on electromagnetic properties of $Co_{82}Zr_6Mo_{12}$ thin (200~1200 $\AA$) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity decreases, but $4{\pi}M_5$ does not change with increasing the film thickness. The coercivity of the films was decreased below 300 $^{\circ}C$ due to stress relief and decreasing the surface roughness, while increased at 400 $^{\circ}C$ due to partial grain growth. And then, $4{\rho}M_5$ was almost independent of annealing temperatures below 200 $^{\circ}C$, but increased from 7.4 kG to 8.0 kG at 300 $^{\circ}C$ and at 400 $^{\circ}C$, which was caused by precipitation and growth of fine Co particles in the films. The electrical resistivity of films was decreased with increasing annealing temperatures and the magnetoresistance was a negative value of nearly 0 $\mu$$\Omega$cm. After annealing at 300 $^{\circ}C$, maximum effective permeability was 1200 to the hard axis of the thin films according to high frequency change. Considering the practical application of biasing layers of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at 300 $^{\circ}C$ in 400 Oe rotating magnetic field.

• 전자공학회논문지 IE
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• v.44 no.2
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• pp.8-13
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• 2007

This paper aims to analyze the characteristics of ITO which are caused by variation of plasma condition to fabricate the OLED of high efficiency. We treated $N_2$ gas and $O_2$ gas plasma on the surface of the ITO by changing their RF plasma power into 100 W, 200 W, 400 W and by changing their 9as pressure into 12 mTorr, 120 mTorr. The work function of ITO that plasma treatment was done by using $N_2$ gas had value of $4.88{\sim}5.07\;eV$, and that by using $O_2$ gas, $4.85{\sim}4.97 eV$. The characteristics of the ITO were most efficient in the $N_2$ gas plasma with the RF power of 200W and gas pressure of 120 mTorr. The rms roughness of ITO surface is the value from AFM image. In this case, ITO obtained $25.2\;{\AA}$ and $30.5\;{\AA}$ in the $N_2$ and $O_2$ gas plasma respectively when it had the RF power of 200 W. But ITO that didn't have plasma treatment was $44.5{\AA}$. The variation of ITO transmittance was almost not discovered by the change of $N_2$ gas and $O_2$ gas pressure.

• Korean Journal of Materials Research
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• v.17 no.1
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• pp.31-36
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• 2007

Nanoimprint lithography (NIL) is a new lithographic method that offers a sub-10nm feature size, high throughput, and low cost. One of the most serious problems of NIL is the stiction between mold and resist. The antistiction layer coating is very effective to prevent this stiction and ensure the successful NIL results. In this paper, an antistiction layer was deposited by VSAM (vapor self assembly monolayer) method on silicon samples with FOTS (perfluoroctyltrichlorosilane) as a precursor for making an antistiction layer. A specially designed LPCVD (low pressure chemical vapor deposition) was used for this experiment. All experiments were achieved after removing the humidity. First, the evaporation test of FOTS was performed for checking the evaporation temperature at low pressure. FOTS was evaporated at 5 Tow and $110^{\circ}C$. In order to evaluate the temperature effect on antistiction layer, chamber temperature was changed from 50 to $170^{\circ}C$ with 0.1ml of FOTS for 1 minute. Good hydrophobicity of all samples was shown at about $110^{\circ}$ of contact angle and under $20^{\circ}$ of hysteresis. The surface energies of all samples calculated by Lewis acid/base theory was shown to be about 15mN/m. The deposited thicknesses of all samples measured by ellipsometry were almost 1nm that was similar value of the calculated molecular length. The surface roughness of all samples was not changed after deposition but the friction force showed relatively high values and deviations deposited at under $110^{\circ}$. Also the white circles were founded in LFM images under $110^{\circ}$. High friction forces were guessed based on this irregular deposition. The optimized VSAM process for FOTS was achieved at $170^{\circ}C$, 5 Torr for 1 hour. The hot embossing process with 4 inch Si mold was successfully achieved after VSAM deposition.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.634-640
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• 1998

A well- shaped trench was investigated in view of the defect distribution along trench sidewall and bottom using high resolution transmission electron microscopy. The trench was formed by HBr plasma and additive gases in magnetically enhanced reactive ion etching system. Adding $0_2$ and other additive gases into HBr plasma makes it possible to eliminate sidewall undercut and lower surface roughness by forming the passivation layer of lateral etching, resulted in the well filled trench with oxide and polysilicon by subsequent deposition. The passivation layer of lateral etching was mainly composed of $SiO_xF_y$ $SiO_xBr_y$ confirmed by chemical analysis. It also affects the generation and distribution of lattice defects. Most of etch induced defects were found in the edge region of the trench bottom within the depth of 10$\AA$. They are generally decreased with the thickness of residue layer and almost disappeared below the uni¬formly thick residue layer. While the formation of crystalline defects in silicon substrate mainly depends on the incident angle and energy of etch species, the region of surface defects on the thickness of residue layer formed during trench etching.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.131-138
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• 1997

Silicon carbide films were chemically vapor deposited onto graphite substrates using MTS(Ch3SiCl3) as a source and Ar or H2 as a diluent gas. The experiments were performed at a fixed condition such as a de-position temperature of 130$0^{\circ}C$, a total pressure of 10 torr, and a flow rate of 100 sccm for each MTS and carrier gas. The purpose of this study is to consider the variation of the growth behavior with the addition of each diluent gas. It is shown that the deposition rate leads to maximum value at 200 sccm addition ir-respective of diluent gases and the deposition rate of Ar addition is faster than that of H2 one. It seems that these characteristics of deposition rate are due to varying interrelationship between boundary layer thick-ness and the concentration of a source with each diluent gas addition, when overall deposition rate is con-trolled by mass transport kinetics. The preferred orientation of (220) plane was maintained for the whole range of Ar addition. However, above 200 sccm addition, especially that of (111) plane was more increased in proportion to H2 addition. Surface morphologies of SiC films were the facet structures under Ar addition, but those were gradually changed from facet to smooth structures with H2 addition. Surface roughness be-came higher in Ar, but it became lower in H2 with increasing the amount of diluent gas.

• Journal of the Korean Magnetics Society
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• v.6 no.4
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• pp.242-250
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• 1996

The effects of annealing in magnetic field after deposition on electromagnetic properties of $Ni_{81}Fe_{19}$ thin($400\;{\AA}$) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity of the films was decreased below $300^{\circ}C$ due to stress relief and recrystallization, while increased at $400^{\circ}C$ due to grain growth and increasing the surface roughness. And then, $4{\pi}M_{s}$, was almost independent of annealing temperatures. Increasing the annealing temperature. the electrical resistivity of films was decreased from $37\;{\mu}{\Omega}cm$ to $24\;{\mu}{\Omega}cm$, the magnetoresistance was nearly a constant of about $0.6\;{\mu}{\Omega}cm$, and the MR ratio was increased from 1.5 % to 3.1 %. Therefore, It was shown that increasing the magnetoresistive ratio was mainly affected by decreasing the electrical resistivity. Considering the practical application of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at $300^{\circ}C$ in 400 Oe unidirectional magnetic field.