• 제목/요약/키워드: The Institute of Mechanical Institute

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Dependence of Dishing on Fluid Pressure during Chemical Mechanical Polishing

  • Higgs III, C. Fred;Ng, Sum Huan;Zhou, Chunhong;Yoon, In-Ho;Hight, Robert;Zhou, Zhiping;Yap, LipKong;Danyluk, Steven
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2002.10b
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    • pp.441-442
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    • 2002

  • Chemical mechanical polishing (CMP) is a manufacturing process that uses controlled wear to planarize dielectric and metallic layers on silicon wafers. CMP experiments revealed that a sub-ambient film pressure developed at the wafer/pad interface. Additionally, dishing occurs in CMP processes when the copper-in-trench lines are removed at a rate higher than the barrier layer. In order to study dishing across a stationary wafer during polishing, dishing maps were created. Since dishing is a function of the total contact pressure resulting from the applied load and the fluid pressure, the hydrodynamic pressure model was refined and used in an existing model to study copper dishing. Density maps, highlighting varying levels of dishing across the wafer face at different radial positions, were developed. This work will present the results.

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Dishing and Erosion in Chemical Mechanical Polishing of Electroplated Copper

  • Yoon, In-Ho;Ng, Sum Huan;Hight, Robert;Zhou, Chunhong;Higgs III, C. Fred;Yao, Lily;Danyluk, Steven
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2002.10b
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    • pp.435-437
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    • 2002

  • Polishing of copper, a process called copper chemical mechanical polishing, is a critical, intermediate step in the planarization of silicon wafers. During polishing, the electrodeposited copper films are removed by slurries: and the differential polishing rates between copper and the surrounding silicon dioxide leads to a greater removal of the copper. The differential polishing develops dimples and furrows; and the process is called dishing and erosion. In this work, we present the results of experiments on dishing and erosion of copper-CMP, using patterned silicon wafers. Results are analyzed for the pattern factors and properties of the copper layers. Three types of pads - plain, perforated, and grooved - were used for polishing. The effect of slurry chemistries and pad soaking is also reported.

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Formation of Metal Mesh Electrodes via Laser Plasmonic Annealing of Metal Nanoparticles for Application in Flexible Touch Sensors (금속 나노 파티클의 레이저 플라즈모닉 어닐링을 통한 메탈메쉬 전극 형성과 이를 활용한 유연 터치 센서)

  • Seongmin Jeong;Yun Sik Hwang;Yu Mi Woo;Yong Jun Cho;Chan Hyeok Kim;Min Gi An;Ho Seok Seo;Chan Hyeon Yang;Kwi-Il Park;Jung Hwan Park
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.2
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    • pp.223-229
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    • 2024

  • Laser-induced plasmonic sintering of metal nanoparticles (NPs) holds significant promise as a technology for producing flexible conducting electrodes. This method offers immediate, straightforward, and scalable manufacturing approaches, eliminating the need for expensive facilities and intricate processes. Nevertheless, the metal NPs come at a high cost due to the intricate synthesis procedures required to ensure long-term reliability in terms of chemical stability and the prevention of NP aggregation. Herein, we induced the self-generation of metal nanoparticles from Ag organometallic ink, and fabricated highly conductive electrodes on flexible substrates through laser-assisted plasmonic annealing. To demonstrate the practicality of the fabricated flexible electrode, it was configured in a mesh pattern, realizing multi-touchable flexible touch screen panel.

  • https://doi.org/10.4313/JKEM.2024.37.2.15 인용 PDF