• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.323-324
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• 2009

We investigated the electrical properties of tris-isopropylsilylethynyl (TIPS)-pentacene organic thin-film transistors (OTFTs) employing Ni/Ag source/drain electrodes. The gap height between the gate insulator and S/D electrode was controlled by changing the thickness of Ag under-layer(20, 30, 40 and 50nm). After evaporating the Ni under-layer, TIPS pentacene channel material was dropping the gap between the gate insulator and SID electrodes. The electrical proprieties of OTFT such as filed-effect mobility, on/off ratio, threshold voltage and subthreshold slope were significantly influenced by the gap height.

• 한국전산유체공학회:학술대회논문집
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• 2008.03b
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• pp.601-604
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• 2008

The flow pulsation of two parallel channels is investigated using RANS and URANS approaches. The parallel channels are connected with a small gap and have different cross section areas. The ratio of a right side area and a left side area ($A_R$ / $A_L$) is 0.5. Computations are conducted using a CFX code. Turbulence models adopted for RANS are Reynolds stress model and Shear Stress Transport (SST) model. The bulk Reynolds number is 60,000. Predicted results are compared with the experimental result of Lee et al. and show the flow pulsation with the frequency of about 100 Hz at the center of the gap.

• Journal of Korean Library and Information Science Society
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• v.49 no.2
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• pp.179-199
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• 2018

The purpose of this study is to analyze the difference of economic condition of students, that is, the difference of basic information utilization ability stemming from education gap. First, we investigated information literacy for high school freshmen who can control the difference of information utilization education experience by school. In doing the research, 629 high school students in the metropolitan city were surveyed using web. we analyzed the educational gap between schools depending on their economic conditions and analyzed the correlation between education gap and basic information utilization ability. As a result, it was found that there is a very significant negative correlation between the ratio of students who get support for school expenses and basic information utilization ability. Second, regression equation was produced through regression analysis of information literacy regression to analyze the effect of educational gap on basic information literacy. In addition, it seeks to consider alternatives that can improve the inequality of information literacy which is derived from education gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.193-196
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• 2001

Single phase $CuInS_2$ thin film with the highest diffraction peak (112) at diffraction angle $(2\theta)$ of $27.7^{\circ}$ and the second highest diffraction peak (220) at diffraction angle $(2\theta)$ of $46.25^{\circ}$ was well made with chalcopyrite structure at substrate temperature of $70^{\circ}C$, annealing temperature of $250^{\circ}C$, annealing time of 60 min. The $CuInS_2$ thin film had the greatest grain size of $1.2{\mu}m$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that $CuInS_2$ thin film was 5.60 A and 11.12 A respectively. Single phase $CuInS_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type $CuInS_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of $CuInS_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type $CuInS_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, $3.0{\times}104cm^{-1}$ and 1.48 eV respectively. When Cu/In composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type $CuInS_2$ thin film was 821 nm, $6.0{\times}10^4cm^{-1}$ and 1.51 eV respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.193-196
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• 2001

Single phase CuInS$_2$ thin film with the highest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second highest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$ was well made with chalcopyrite structure at substrate temperature of 70 $^{\circ}C$, annealing temperature of 25$0^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 ${\mu}{\textrm}{m}$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that CuInS$_2$ thin film was 5.60 $\AA$ and 11.12 $\AA$ respectively. Single phase CuInS$_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type CuInS$_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of CuInS$_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type CuInS$_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, 3.0x10 $^4$ $cm^{-1}$ / and 1.48 eV respectively. When CuAn composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film was 821 nm, 6.0x10$^4$ $cm^{-1}$ / and 1.51 eV respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.151-152
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• 2007

최근들어 Device 크기가 100nm 이하로 줄어듦에 따라 High Density Plasma Chemical Vapor Deposition(HDP-CVD) 기술로는 100nm 이하의 gap에 Aspect ratio가 6:1 이상 되는 STI(Shallow Trench Isolation) 구조를 Void 없이 채우는 것이 불가능해 지고 있다. 이를 극복하기 위하여 여러 방면으로 연구가 수행되어지고 있다. 그 방법 중의 하나인 Dep/Etch/Dep Cycle이 이번 연구에서 사용되었으며, 일반적인 HDP CVD보다 더 낮은 압력에서 증착과 식각이 수행되었다. 그 결과 다른 여러 방법들보다 좋은 막질을 얻을 수 있었으며, Gap fill 성능을 향상 시킬 수 있었다.

• Journal of Korean Society of Forest Science
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• v.89 no.3
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• pp.452-460
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• 2000

This study was to investigate the growth characteristics, physiological adaptation of Pinus densiflora(Japanese Red Pine) seedlings at the artificial canopy gap in the Quercus acutissima plantation and to analyze its natural regeneration mechanism. Photosynthetic and transpiration rates were analyzed by different levels of photosynthetically active radiation and by seedling growth. Comparing to seedlings at the open area, those at the canopy gap showed more growth in height than in diameter with different levels of light quality and low light intensity, and the increase rate of dry weight was higher in the aboveground than in the underground, maintaining relatively high T/R rate. The C/F(the ratio of non-photosynthetic organs to photosynthetic organs in dry weight) of the aboveground at the canopy gap was higher than that at the open area by 0.1~0.2, while light saturation and light compensation points at the canopy gap were lower than that at the open area by $300{\mu}mol\;m^{-2}s^{-1}$ and 40%, respectively. The seedlings appeared to have shade tolerance to a certain extent at the young growth stage despite Pinus densiflora is typically classified shade-intolerant species. With light intensity lower than $400{\sim}450{\mu}mol\;m^{-2}s^{-1}$, photosynthetic rate and water use efficiency relatively increased by effective use of light energy.

• Journal of Elementary Mathematics Education in Korea
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• v.19 no.4
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• pp.485-499
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• 2015

In this paper, focusing on definitions of terms related to ratio (a:b, external ratio, internal ratio, percentage, proportion, bi-ui-gap(value of a:b)), elementary school mathematics textbooks of Korea and Japan are compared. We can find significant differences between Korean and Japanese textbooks. In Korean textbook, 'bi-yul' includes both of the internal ratio and the external ratio. In Japanese textbooks, the external ratio(amount of unit size) and the internal ratio(wariai) are defined independently. And a:b is set to a subconcept of the internal ratio. In addition, a:b and percentage are presented as methods to express the internal ratio. From these results, the following four implications for developing our mathematics textbooks can be presented as conclusions. First, it is necessary to limit the ratio to mean the internal ratio. Second, it is necessary to define connotatively the ratio as the internal ratio and to set it as a prior concept of a:b. Third, it is necessary to define 1% as the internal ratio 0.01. Fourth, it is necessary to define bi-ui-gap as a number for expressing a:b, when viewing a:b as the expression method of the internal ratio.

• Proceedings of the Korean Geotechical Society Conference
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• 2000.11a
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• pp.511-518
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• 2000

Characteristics of joint orientation, length, spacing and their distribution are very important factors for slope stability, Especially, the effect of joint spacing is an essential factor of slope stability. This study is to analyze the effect of joint spacing in cases of sliding and toppling, which is a typical failure mode. Joint spacing can divided into vertical spacing(spacing) and horizontal spacing(gap). And then, the spacing/length ratio of joint directly affect rock slope failure. When the ratio is below 0.05, the possibility of failure is rapidly increased. In case of toppling, the possibility of failure depends on the ratio of spacing to height of slope ratio slope. As the ratio decreases, the possibility of toppling failure increased. The critical ratio of spacing to height of slope is determined by the dip angle of the slope and the orientation of joint sets.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2333-2337
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• 2007

Nanoporous TiO2 and ZrO2 thin films were spin-coated using a surfactant-templated approach from Pluronic P123 (EO20PO70EO20) as the templating agent, titanium alkoxide (Ti(OC4H9)4) as the inorganic precursor, and butanol as a the solvent. The control of the electronic structure of TiO2 is crucial for its various applications. We found that the band gap of the hybrid nanoporous thin films can be easily tuned by adding an acetylacetonestabilized Zr(OC4H9)4 precursor to the precursor solution of Ti(OC4H9)4. Pores with a diameter of 5 nm-10 nm were randomly dispersed and partially connected to each other inside the films. TiO2 and ZrO2 thin films have an anatase structure and tetragonal structure, respectively, while the TiO2-ZrO2 hybrid film exhibited no crystallinity. The refractive index was significantly changed by varying the atomic ratio of titanium to zirconium. The band gap for the nanoporous TiO2 was estimated to 3.43 eV and that for the TiO2-ZrO2 hybrid film was 3.61 eV.