• Title/Summary/Keyword: The Electronic Times

Search Result 3,577, Processing Time 0.029 seconds

Remote Water Level Monitoring System Based on Reflected Optical Power Detection with an Optical Coupler for Spent Fuel Pool at Nuclear Power Plant (전력상실시 광분배기 기반의 반사광 측정을 통한 사용후핵연료 저장조의 원격 수위 감시방법)

  • Kim, Sung-Man;Lee, Hoon-Keun
    • The Journal of the Korea institute of electronic communication sciences
    • /
    • v.14 no.3
    • /
    • pp.505-512
    • /
    • 2019
  • We propose a new method to monitor the water level of spent fuel pool in a nuclear power plant without electric power. We also analyze the performance and limitation of the proposed method. Our method is based on the reflected optical power at the end of optical fiber through a $1{\times}N$ optical coupler. We reveal that there is no problem to monitor the water level when using a $1{\times}8$ optical coupler. However, when a $1{\times}16$ optical coupler is used, only 15 out of 16 output ports can be used due to Rayleigh back-scattering. When a $1{\times}32$ optical coupler is used, only 25 out of 32 output ports can be used to monitor the water level.

16×16 HEVC Inverse Core Transform Architecture Using Multiplier Reuse (곱셈기를 재사용하는 16×16 HEVC 코어 역변환기 설계)

  • Lee, Jong-Bae;Lee, Seongsoo
    • Journal of IKEEE
    • /
    • v.19 no.3
    • /
    • pp.378-384
    • /
    • 2015
  • In conventional HEVC inverse core transform architectures, extra $n{\times}n$ inverse transform block is added to $2n{\times}2n$ inverse transform block, and it operates as one $2n{\times}2n$ inverse transform block or two $n{\times}n$ inverse transform blocks. Thus, same number of pixels are processed in the same time, but it suffers from increased hardware size due to extra $n{\times}n$ inverse transform block. To avoid this problem, a novel $8{\times}8$ HEVC inverse core transform architecture was proposed to eliminate extra $4{\times}4$ inverse transform block based on multiplier reuse. This paper extends this approach and proposes a novel HEVC $16{\times}16$ inverse core transform architecture. Its frame processing time is same in $4{\times}4$, $8{\times}8$, and $16{\times}16$ inverse core transforms, and reduces gate counts by 13%.

A Study on the Si-SiO$_2$Interface State Characteristics of Nonvolatile SNOS FET Memories using The Charge Pumping Method (Charge Pumping 방법을 이용한 비휘발성 SNOS FET기억소자의 Si-SiO$_2$계면상태 특성에 관한 연구)

  • 조성두;이상배;문동찬;서광열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1992.05a
    • /
    • pp.82-85
    • /
    • 1992
  • In this study, charge pumping method was used to investigate the Si-SiO$_2$interface characteristics of the nonvolatile SNOSFET memory devices, fabricated using the CMOS 1 Mbit processes (1.2$\mu\textrm{m}$ design rule), with thin oxide layer of 30${\AA}$ thick and nitride layer of 525${\AA}$ thick on the n-type silicon substrate (p-channel). Charge pumping current characteristics with the pulse base level were measured for various frequencies, falling times and rising times. By means of the charge dynamics in a non-steady state, the average Si-SiO$_2$interface state density and capture cross section were determined to be 3.565${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ and 4.834${\times}$10$\^$-16/$\textrm{cm}^2$, respectively. However Si-SiO$_2$ interface state densities were disributed 2.8${\times}$10$\^$-11/~5.6${\times}$10$\^$11/cm$\^$-2/~6${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ in the lover half of energy gap.

  • PDF

Fabrication of PT type high power diode by proton irradiation (양성자 주입법에 의한 PT형 고속전력 다이오드의 제조)

  • Bae, Young-Ho;Kim, Byoung-Gil;Lee, Jong-Hun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2005.07a
    • /
    • pp.97-98
    • /
    • 2005
  • 양성자 조사법에 의하여 고속 전력용 다이오드를 제작하기 위하여 punch-through 다이오드에 다양한 조건으로 양성자를 조사하였다. 동일한 소자에 전자선을 조사한 소자와 속도 향상을 위한 공정이 행하여지지 않은 동일한 소자 각각의 특성을 비교 분석하였다. 양성자 주입은 주입 에너지를 1 MeV 와 1.3 MeV로, 각 에너지 조건에서 도즈를 $1\times10^{12}cm^{-2}$, $1\times10^{13}cm^{-2}$로 변화 시켰다. 분석 결과 양성자 주입된 소자에서 역방향 회복시간은 최소 소자의 약 45%, 전자선이 조사된 소자에 비하여 약 73 %의 값으로 향상시킬 수 있었으며 역방향 항복 전압과 순방향 저항은 처리되지 않은 소자와 전자빔이 조사된 시편들의 값과 비슷한 값을 나타내었다.

  • PDF

Thin and Hermetic Packaging Process for Flat Panel Display Application

  • Kim, Young-Cho;Jeong, Jin-Wook;Lee, Duck-Jung;Choi, Won-Do;Lee, Sang-Geun;Ju, Byeong-Kwon
    • Journal of Information Display
    • /
    • v.3 no.1
    • /
    • pp.11-16
    • /
    • 2002
  • This paper presents a study on the tubeless Plasma Display Panel (PDP) packaging using glass-to-glass electrostatic bonding with intermediate amorphous silicon. The bonded sample sealing the mixed gas with three species showed high strength ranging from 2.5 MPa to 4 MPa. The glass-to-glass bonding for packaging was performed at a low temperature of $180^{\circ}C$ by applying bias of 250 $V_{dc}$ in ambient of mixed gases of He-Ne(27 %)-Xe(3 %). The tubeless packaging was accomplished by bonding the support glass plate of $30mm{\times}50mm$ on the rear glass panel and the capping glass of $20mm{\times}20mm$. The 4-inch color AC-PDP with thickness of 8 mm was successfully fabricated and fully emitted as white color at a firing voltage of 190V.

A 28-GHz Wideband 2×2 U-Slot Patch Array Antenna

  • Yoon, Nanae;Seo, Chulhun
    • Journal of electromagnetic engineering and science
    • /
    • v.17 no.3
    • /
    • pp.133-137
    • /
    • 2017
  • In this study, a 28-GHz U-slot array antenna for a wideband communication system is proposed. The U-slot patch antenna structure consists of a patch, two U-shaped slot, and a ground plane. With the additional U-slot, the proposed antenna has around 10% of bandwidth at -10 dB. To increase gain, the U-slot antenna is arrayed to $2{\times}2$. The proposed antenna is designed and fabricated. The $2{\times}2$ array antenna volume is $41.3mm{\times}46mm{\times}0.508mm$. The proposed antenna was measured and compared with the simulation results to prove the reliability of the design. The bandwidth and gain of the measurement results are 3.35 GHz and 13 dBi, respectively and the operating frequency is around 28 GHz.

Effects of the Inclined Angles of Channel on Thermal Stability of Electronic Components (채널의 경사각이 전자부품의 열적 안정성에 미치는 영향)

  • 추홍록;상희선;유재환
    • Journal of the Korean Society of Safety
    • /
    • v.15 no.1
    • /
    • pp.36-42
    • /
    • 2000
  • An experimental study was carried out to investigate the effects of inclined angles of channel on thermal stability of electronic components. In this study, it is focused on the natural convection heat transfer from an inclined parallel channel with discrete protruding heat sources. The material used for the inclined parallel channel was epoxy-resin, while air as the cooling fluid. Heat transfer phenomena for inclined angles of $\psi$=$15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$ and for the range of $9.52{\times}10^5/ were analyzed. The thermal fields in the channel were visualized by Mach-Zehnder interferometer. Also, local temperatures were measured by thermocouples along the channel wall and heat sources surface. As a result, for the range of $4.29{\times} 10^5/, a useful correlation of mean Nusselt number was proposed as a function of modified channel Rayleigh number.

  • PDF

Design and Characteristics of AE Sensor for Detection of Metallic particle in GIS (GIS 내의 금속이물 탐지용 AE 센서의 설계와 특성)

  • 홍재일;정영호;류주현
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.13 no.6
    • /
    • pp.502-508
    • /
    • 2000
  • In order to detect the partial discharge with the metallic particle in GIS the AE(Acoustic Emission) sensor was designed and simulated by ANSYS 5.5 and manufactured as the coupled vibration mode. The measured resonant frequency and the maximum sensitivity frequency of three coupled AE sensors were as follows ; 147.88 kHz in 8.1mm $\Phi$$\times$8.1mm 128.82 kHz and 58.8 kHz in 9.5 mm$\Phi$$\times$9.5mm, 85.22 kHz and 32.6 kHz in 14.3 mm$\Phi$$\times$14.3 mm, resonant frequency of the AE sensor. The AE sensor of 9.5 mm$\Phi$$\times$9.5mm responded higher than the other coupled vibration mode AE sensor at the partial discharge detection in GIS.

  • PDF

A study on characteristics of piezoelectric fan in PZN-PZ-PT ceramics (PZN-PZ-PT 세라믹스 압전팬의 특성에 관한 연구)

  • 최형욱;백동수;윤현상;이두희;김규수;박창엽
    • Electrical & Electronic Materials
    • /
    • v.8 no.1
    • /
    • pp.1-5
    • /
    • 1995
  • In this study, a piezoelectric fan was fabricated using piezoelectric element of 0.13PZN-0.41PZ-0.46PT prepared by extruding method. The sizes of the piezoelectric element and the piezoelectric fan were adjust to utilize commercial ac source(100V, 6OHz). The size of the piezoelectric element was $0.26{\times}19.5{\times}45$mm and the resonant frequency and the electromechanical coupling coefficient were 31.26KHz, 31.58% respectively. The size of the piezoelectric fan was $0.62{\times}19.5{\times}78.5$mm and the maximum displacement was 40mm.

  • PDF

Design and Characteristics of a Monolithic Inchworm Type Actuator (MITA) (일체형 인치웜 방식 액추에이터의 설계 및 특성)

  • Kang, Hyung-Won;Lee, Hyeong-Gyu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.06a
    • /
    • pp.44-44
    • /
    • 2007
  • New inchworm type piezoelectric actuator design, which can reduce the number of the piezoelectric body for manufacturing inchworm type actuator, is suggested in this work. Inchworm type actuator consists of three or more piezoelectric bodies, on the other hand the new-designed inchworm type actuator has only one piezoelectric body. The one piezoelectric body that size is $2\;{\times}\;2\;{\times}\;4\;[mm^2]$ (DWL) has 2 clamping part and 1 extending part. The size of the new-designed actuator with one piezoelectric body is $5\;{\times}\;6\;{\times}\;9\;[mm^2]$ (DWL). The new-designed inchworm type actuator performed the operation at a cycle (6 steps) of $0.3{\mu}m$ per $33.3{\mu}s$ and a generated force of 0.6N.

  • PDF