• Title/Summary/Keyword: Temperature growth chamber

Search Result 223, Processing Time 0.024 seconds

An Experimental Study on Applying Heat Pump System to Facility Horticulture House (히트펌프 시스템의 시설원예 적용에 관한 실험적 연구)

  • Kim, Jae-Dol
    • Journal of Power System Engineering
    • /
    • v.17 no.6
    • /
    • pp.88-94
    • /
    • 2013
  • As the results of analysis that are applying a heat pump using underground water as heat source of facility horticulture house, temperature change in house, growth of cultivated plants and the crop characteristic, the conclusion can be acquired as follows. It was possible to maintain the chamber temperature through operating heat pump with setting goal temperature at $16^{\circ}C$ and temperature variation at ${\pm}3^{\circ}C$. And cooling and heating coefficient of performance in heat pump system are different from setting room temperature and operation condition of equipment, totally in case that the setting temperature in house is low, the coefficient of performance and the in case that temperature departure is low. In case that the house does not heated, the result of the growth characteristic of cucumber planted last 50days is that cucumber grown in house equipped with heat pump is the most favorable growth characteristic due to maintaining a constant room temperature. After 90 days, the quantity and weight cucumber harvested in each house are averagely 9.8%, 13.1% increase and more heavy weight respectively. So it is researched that crop characteristic is superior.

The Study of Low Temperature $\muC-Si/CaF_2$/glass Film Growth using Buffer layer (Buffer layer 를 이용한 저온 $\muC-Si/CaF_2$/glass 박막성장연구)

  • 김도영;안병재;임동건;이준신
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1999.05a
    • /
    • pp.589-592
    • /
    • 1999
  • This paper describes direct $\mu$C-Si/CaF$_2$/glass thin film growth by RPCVD system in a low temperature for thin film transistor (TFT), photovoltaic devices. and sensor applications. Experimental factors in a low temperature direct $\mu$ c-Si film growth are presented in terms of deposition parameters: SiH$_4$/H$_2$ ratio, chamber total pressure, substrate temperature, rf power, and CaF$_2$ buffer layer. The structural and electrical properties of the deposited films were studied by means of Raman spectroscopy, I-V, L-I-V, X-ray diffraction analysis and SEM. we obtain a crystalline volume fraction of 61%, preferential growth of (111) and (220) direction, and photosensitivity of 124. We achieved the improvement of crystallinity and electrical property by using the buffer layers of CaF$_2$ film.

  • PDF

Differently expressed genes of soybean by ambient heat stress

  • Jung, Inuk;Kim, Jin Hyeon;Jung, Woosuk
    • Proceedings of the Korean Society of Crop Science Conference
    • /
    • 2017.06a
    • /
    • pp.156-156
    • /
    • 2017
  • Plants are grown under constitutive changing of environmental conditions and response to external conditions at both protein and transcription level. The effects of heat on plant growth are broad and influence the yield directly. Heat stresses could be classified depend on intensity and duration. Fundamental changes of growth condition by climate change maybe or maybe not classified as a stress on plant growth. The effects of a short and unanticipated impact of elevated heat on plant could be different with those of under longer extension of ambient heat. To examine differently expressed gene sets by ambient heat stress of soybean, we grow the soybean in normal condition for three weeks. After that, soybean plants move to growth chamber. The temperature of growth chamber increase up to $9^{\circ}C$ for four days. We have extracted mRNA and micro RNA every 24 hours and carried RNA sequence analysis. We found major metabolic pathways affected by ambient heat stress. Mainly carbon metabolism, translation machinery and amino acid synthesis are affected. We discussed the expression patterns of genes of heat sensing and hormone responses.

  • PDF

Numerical Analysis for Optimization of Film Uniformity and Deposition Grow Rate in the Vertical Cylindric Reactor (수직 원통형 CVD 반응로에서 박막의 균일성과 증착률 최적화에 대한 수치해석적 연구)

  • Kim, Jong-Hui;Kim, Hong-Je;O, Seong-Mo;Lee, Geon-Hwi;Lee, Bong-Gu
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.19 no.8
    • /
    • pp.92-99
    • /
    • 2002
  • This work investigated the optimal condition for an uniform deposition growth rate in the vertical cylindric CVD chamber. Heat transfer, surface chemical reaction and mass diffusion in the flow field of CVD chamber h,id been computed using Fluent v5.3 code. A SIMPLE based finite Volume Method (FVM) was adopted to solve the fully elliptic equations for momentum, temperature and concentration of a chemical species. The numerical analysis results show good agreements with the measurements obtained by N. Yoshikawa. The results obtained by the numerical analysis showed that the film growth rate in the center of a susceptor is increasing, as the inner flow approaches to the forced convection. To the contrast, as it approaches to the natural convection, that in the outside of a susceptor is increasing. As the Reynolds number increases, the uniformity may not hold due to the larger temperature gradient at a susceptor surface. Therefore, when the temperature gradient on the surface of a susceptor is zero, the film growth rate becomes uniform on most surface.

Low Temperature Growth of Silicon Oxide Thin Film by In-direct Contacting Process with Photocatalytic TiO2 Layer on Fused Silica (광촉매 TiO2 층의 비접촉식 공정을 통한 저온 실리콘 산화박막 성장)

  • Ko, Cheon Kwang;Lee, Won Gyu
    • Applied Chemistry for Engineering
    • /
    • v.19 no.2
    • /
    • pp.236-241
    • /
    • 2008
  • The possibility of silicon oxidation through the aerial-diffusion of active oxygen species has been evaluated. The species originate from the surface of $TiO_2$ exposed by UV. Among process parameters such as UV intensity, substrate temperature and chamber pressure with oxygen, UV intensity was a major parameter to the influence on the oxide growth rate. When 1 kW high pressure Hg lamp was used as a UV source, the growth rate of silicon oxide was 8 times as faster as that of a 60 W BLB lamp. However, as the chamber pressure increased, the growth rate was declined due to the suppression of aerial diffusion of active oxygen species. According to the results, it could be confirmed that the aerial-diffusion of active oxygen species from UV-irradiated photocatalytic surface can be applied to a new method for preparing an ultra-thin silicon oxide at the range of relatively low temperature.

Effect of Salinity on the Seed Germination and Seedling Growth of Pinus densiflora for. erecta Uyeki (염도가 금강소나무의 종자발아와 유묘성장에 미치는 영향)

  • Lee, Ho-Joon;Kim, Seon-Ho
    • The Korean Journal of Ecology
    • /
    • v.12 no.4
    • /
    • pp.219-236
    • /
    • 1989
  • The effect of salinity on the seed germination and seedling growth of Pinus densiflora for. erecta Uyeki were studied under the controlled conditions in the growth chamber. The seeds were sorted into three classes in weight such as large ($15.49\pm$1.63mg), medium($10.61\pm$1.38mg), and small ($6.57\pm$1.33mg) to determine the role of seed weight in germination and seedling growth of the pine. Polymorphic seeds of the pine were germinated an salinity range of 0 to 1.5% NaCl under various temperature ($10^{\circ}$ $-25^{\circ}$ with $5^{\circ}$C interval of constant temperature, and $10^{\circ}$ $-20^{\circ}$C, $15^{\circ}$ $-25^{\circ}$C of alternating temperature) in order to determine their germinability and seeding growth. In control plot, there was little difference of germination percentage among the seed weight classes, but in saline plot, the larger seeds generally had a higher percentage and rate of germination. There occurred synergistic interaction between salinity and temperature in the germination and the increase of temperature enhanced germination of seeds at the same salinity level. Alternating temperature regimes of $15^{\circ}$-$25^{\circ}$C yielded maximum germination and no germination was occurred at $10^{\circ}C$. The germination at alternating temperature showed higher germination percentage than at constant temperature. The percentage and of germination decreased drastically with increased salinity level to 1.00%; no germination was occurred at 1.50% salinity level. The growth fo sddelings from larger seeds was better than that of smaller seeds at the same salinity and temperature. The hypocotyl and radicle were more sensitive than cotyledon to the increased salinity stress.

  • PDF

The study of direct ${\mu}c$-Si:H film growth using RPCVD system in low temperature (RPCVD system을 이용한 ${\mu}c$-Si:H의 저온 직접 성장 연구)

  • Ahn, Byeong-Jae;Kim, Do-Young;Lim, Dong-Gun;Yi, Jun-Sin
    • Proceedings of the KIEE Conference
    • /
    • 1999.07d
    • /
    • pp.1818-1820
    • /
    • 1999
  • This paper presents direct ${\mu}c$-Si:H thin film growth on the glass substrates using RPCVD system (remote plasma chemical vapor deposition) in low temperature. Hydrogenated micro-crystalline silicon deposited by RPCVD system in low temperature is very useful material for photovoltaic devices, sensor applications, and TFTs (thin film transistors). Varying the deposition conditions such as substrate temperature, gas flow rate, reactive gas ratio $(SiH_4/H_2)$, total chamber pressure, and rf power, we deposited ${\mu}c$-Si:H thin films on the glass substrates (Corning glass 1737). And then we measured the structural and electrical properties of the films.

  • PDF

Plant Growth Monitoring Using Thermography -Analysis of nutrient stress- (열영상을 이용한 작물 생장 감시 -영양분 스트레스 분석-)

  • 류관희;김기영;채희연
    • Journal of Biosystems Engineering
    • /
    • v.25 no.4
    • /
    • pp.293-300
    • /
    • 2000
  • Automated greenhouse production system often require crop growth monitoring involving accurate quantification of plant physiological properties. Conventional methods are usually burdensome, inaccurate, and harmful to crops. A thermal image analysis system can accomplish rapid and accurate measurements of physiological-property changes of stressed crops. In this research a thermal imaging system was used to measure the leaf-temperature changes of several crops according to nutrient stresses. Thermal images were obtained from lettuce, cucumber, and pepper plants. Plants were placed in growth chamber to provide relatively constant growth environment. Results showed that there were significant differences in the temperature of stressed plants and non-stressed plants. In a case of the both N deficiency and excess, the leaf temperatures of cucumber were $2^{\circ}C$ lower than controlled temperature. The leaf temperature of cucumber was $2^{\circ}C$ lower than controlled temperature only when it was under N excess stress. For the potassium deficiency or excess stress, the leaf temperaures of cucumber and hot pepper were $2^{\circ}C$ lower than controls, respectively. The phosphorous deficiency stress dropped the leaf temperatures of cucumber and hot pepper $2^{\circ}C$ and $1.5^{\circ}C$ below than controls. However, the leaf temperature of lettuce did not change. It was possible to detect the changes in leaf temperature by infrared thermography when subjected to nutrition stress. Since the changes in leaf temperatures were different each other for plants and kinds of stresses, however, it is necessary to add a nutrient measurement system to a plant-growth monitoring system using thermography.

  • PDF

Effect of Temperature on the Nitrogen Fixation Activity of Root Nodules of Melilotus suaveolens (전동싸리 근류의 질소고정에 대한 온도의 영향)

  • Park, Tae-Gyu;Jong Suk Song;In Seon Kim;Wwang Soo Nho;Bong Bo Seo;Hwa Sook Chung;Jae Hong Pak;Seung Dal Song
    • The Korean Journal of Ecology
    • /
    • v.18 no.3
    • /
    • pp.323-332
    • /
    • 1995
  • Effects of wintering and temperature on nitrogen fixation activity of nodules of Melilotus suaveolens Ledeb. grown in the field and growth chamber conditions were investigated. The biennial plants transfered to the growth chamber from winter field recovered the activity in 3 weeks of incubation and attained the maximum rate of $153{\mu}mol\;C_2H_4{\cdot}g$ fr wt $nodule^{-1}{\cdot}h^{-1}$ in 5 weeks. When root nodules which adapted to different temperatures, were pretreated with 10, 20 and $30^{\circ}C$ for 1 hour, and then transfered to $30^{\circ}C$, nitrogen fixation activity was promoted in the nodules exposed to lower field temperature ($12^{\circ}C$) with 1$0^{\circ}C$ pretreatment. M. suaveolens maintained nitrogen fixation activity in the wide range of temperatures, and was more tolerant to lower temperature than those of other woody leguminous plants, Diurnal changes of nodule activity showed increase with sunrise and decrease with sunset during spring and autumn, but the activity was inhibited during July and August because of high temperature with stron irradiation. Nitrogen fixation activity of annual plant appeared in mid-April, and showed two peaks (104 and 43 mol $C_2H_4{\cdot}g$ fr wt $nodule^{-1}{\cdot}h^{-1}$) in July and September, and then disappeared after October. Nitrogen fixation activity of biennial plant reappeared in mid-March after wintering and attained two peaks (102 and 82 ${\mu}mol\;C_2H_4{\cdot}g$ fr wt $nodule^{-1}{\cdot}h^{-1}$) in April and June of flowering period, and then disappeared after July due to plant withering by severe drought.

  • PDF

Characteristics of soil respiration temperature sensitivity in a Pinus/Betula mixed forest during periods of rising and falling temperatures under the Japanese monsoon climate

  • Oe, Yusuke;Yamamoto, Akinori;Mariko, Shigeru
    • Journal of Ecology and Environment
    • /
    • v.34 no.2
    • /
    • pp.193-202
    • /
    • 2011
  • We studied temperature sensitivity characteristics of soil respiration during periods of rising and falling temperatures within a common temperature range. We measured soil respiration continuously through two periods (a period of falling temperature, from August 7, 2003 to October 13, 2003; and a period of rising temperature from May 2, 2004 to July 2, 2004) using an open-top chamber technique. A clear exponential relationship was observed between soil temperature and soil respiration rate during both periods. However, the effects of soil water content were not significant, because the humid monsoon climate prevented soil drought, which would otherwise have limited soil respiration. We analyzed temperature sensitivity using the $Q_{10}$ value and $R_{ref}$ (reference respiration at the average temperature for the observation period) and found that these values tended to be higher during the period of rising temperature than during the period of falling temperature. In the absence of an effect on soil water content, several other factors could explain this phenomenon. Here, we discuss the factors that control temperature sensitivity of soil respiration during periods of rising and falling temperature, such as root respiration, root growth, root exudates, and litter supply. We also discuss how the contribution of these factors may vary due to different growth states or due to the effects of the previous season, despite a similar temperature range.