• 제목/요약/키워드: Temperature dependent optical spectroscopy

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CuCl 미립자가 분산된 비선형 광학유리의 제조와 비선형 광특성: III. CuCl 반도체 미립자의 Bimodal 분포 특성과 온도에 따른 광흡수도 (Preparation and Nonlinear Optical Properties of CuCl-doped Nonlinear Optical Glasses : III. Bimodal Distribution of CuCl Nanocrystals and Temperature Dependent Optical Absorption Spectra)

  • 윤영권;한원택
    • 한국세라믹학회지
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    • 제34권4호
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    • pp.436-442
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    • 1997
  • The bimodal distribution of CuCl nano-crystals precipitated in alumino-borosilicate glass matrix (30SiO2-45B2O3-7.5Al2O3-7.5Na2O-7.5CaO-2.5GeO2(mole %)) was investigated by TEM and the temperature dependent optical spectroscopy. Two types of CuCl particles with different size were observed by TEM and it was confirmed by the splitting of Z3 absorption peak at low temperature and the occurrence of deflection point in the optical spectra with temperature.

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근적외분광분석법을 이용한 생쥐꼬리에서의 비침습 혈당 정량시 장기간 측정에 따른 변이 요인의 보정 (Compensation of Variation from Long-Term Spectral Measurement for Non-invasive Blood Glucose in Mouse by Near-Infrared Spectroscopy)

  • 백주현;강나루;우영아;김효진
    • 약학회지
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    • 제48권3호
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    • pp.177-181
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    • 2004
  • Non-invasive blood glucose measurement from mouse tail was performed by near-infrared (NIR) spectroscopy. Three groups; normal, type I diabetes (insulin dependent diabetes mellitus, IDDM), type II diabetes (non-insulin dependent diabetes mellitus, NIDDM) group, were studied over a 10 weeks period with the collection of near-infrared (NIR) spectra. Spectral variations from long-term measurement (10 weeks) from dramatic and nonlinear changes in the optical properties of the live tissue sample were compensated by chemometrics techniques such as principle component analysis (PCA) and partial least squares (PLS) regression. The effect from mouse body temperature changes on NIR spectral data was also considered. This study showed that the compensation of variations from long-term measurement and temperature changes improved calibration accuracy of non-invasive blood glucose measurement.

Hot carrier induced carrier transport property on InAs nanowires

  • Kim, Taeok;Park, Sungjin;Kang, Hang-Kyu;Bae, Jungmin;Cho, M.H.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.362.1-362.1
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    • 2016
  • InAs nanowires were synthesized by a vapor-liquid-solid method with InAs powder. The composition and crystalline structure of nanowires were confirmed by energy-dispersive spectroscopy (EDS) and high resolution transmission electron microscopy (HRTEM), respectively. The thermal conduction of nanowires was investigated by the optical method using Raman spectroscopy: i.e., the local temperature on nanowire was determined by laser heating. As temperature increased, the Raman peaks are shifted to low frequency and broadened. The temperature dependent Raman scattering experiments was realized on InAs nanowires with different percentages of zinc-blende and wurtzite structure. The temperature dependence on the nanowire structure has been successfully obtained: the phonon scattering was more increased in InAs heretostructure nanowires, compared to the InAs nanowires with homostructure. The result strongly suggests that the thermal conduction can be effectively controlled by ordered interface without any decrease in electrical conduction.

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RF-PECVD로 증착된 DLC 박막의 온도 변화에 따른 트라이볼로지 특성 (The Influence of the Temperature Increase on the Tribological Behavior of DLC Films by RF-PECVD)

  • 이영제;조용경;신윤하
    • Tribology and Lubricants
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    • 제22권3호
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    • pp.127-130
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    • 2006
  • DLC (Diamond Like Carbon) films show very desirable surface interactions with high hardness, low friction coefficient, and good wear-resistance properties. The friction behavior of hydrogenated DLC film is dependent on tribological environment, especially surrounding temperature. In this work, the tribological behaviors of DLC (Diamond-like carbon) films, prepared by the radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method, were studied in elevated temperatures. The ball-on-disk tests with DLC films on steel specimens were conducted at a sliding speed of 60 rpm, a load of 10N, and surrounding various temperatures of $25^{\circ}C,\;40^{\circ}C,\;55^{\circ}C\;and\;75^{\circ}C$. The results show considerable dependency of DLC tribological parameters on temperature. The friction coefficient decreased as the surrounding temperature increased. After tests the wear tracks of hydrogenated DLC film were analyzed by optical microscope, scanning electron spectroscopy (SEM) and Raman spectroscopy. The surface roughness and 3-D images of wear track were also obtained by an atomic force microscope (AFM).

RF and Optical properties of Graphene Oxide

  • 임주환;;윤형서;오주영;정영모;박형구;전성찬
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2012년도 춘계학술발표대회
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    • pp.68.1-68.1
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    • 2012
  • The best part of graphene is - charge-carriers in it are mass less particles which move in near relativistic speeds. Comparing to other materials, electrons in graphene travel much faster - at speeds of $10^8cm/s$. A graphene sheet is pure enough to ensure that electrons can travel a fair distance before colliding. Electronic devices few nanometers long that would be able to transmit charge at breath taking speeds for a fraction of power compared to present day CMOS transistors. Many researches try to check a possibility to make it a perfect replacement for silicon based devices. Graphene has shown high potential to be used as interconnects in the field of high frequency electrical devices. With all those advantages of graphene, we demonstrate characteristics of electrical and optical properties of graphene such as the effect of graphene geometry on the microwave properties using the measurements of S-parameter in range of 500 MHz - 40 GHz at room temperature condition. We confirm that impedance and resistance decrease with increasing the number of graphene layer and w/L ratio. This result shows proper geometry of graphene to be used as high frequency interconnects. This study also presents the optical properties of graphene oxide (GO), which were deposited in different substrate, or influenced by oxygen plasma, were confirmed using different characterization techniques. 4-6 layers of the polycrystalline GO layers, which were confirmed by High resolution transmission electron microscopy (HRTEM) and electron diffraction analysis, were shown short range order of crystallization by the substrate as well as interlayer effect with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups on its layers. X-ray photoelectron Spectroscopy (XPS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation, and Fourier Transform Infrared spectroscopy (FTIR) and XPS analysis shows the changes in oxygen functional groups with nature of substrate. Moreover, the photoluminescent (PL) peak emission wavelength varies with substrate and the broad energy level distribution produces excitation dependent PL emission in a broad wavelength ranging from 400 to 650 nm. The structural and optical properties of oxygen plasma treated GO films for possible optoelectronic applications were also investigated using various characterization techniques. HRTEM and electron diffraction analysis confirmed that the oxygen plasma treatment results short range order crystallization in GO films with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups. In addition, Electron energy loss spectroscopy (EELS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation and XPS analysis shows that epoxy pairs convert to more stable C=O and O-C=O groups with oxygen plasma treatment. The broad energy level distribution resulting from the broad size distribution of the $sp^2$ clusters produces excitation dependent PL emission in a broad wavelength range from 400 to 650 nm. Our results suggest that substrate influenced, or oxygen treatment GO has higher potential for future optoelectronic devices by its various optical properties and visible PL emission.

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Conformation of Single Stranded Poly(dA) and Its Interaction with 4',6-Diamidino-2-phenylindole

  • 정갑선;김명순;이길준;조태섭;Kim, Seog K.;이세윤
    • Bulletin of the Korean Chemical Society
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    • 제18권5호
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    • pp.510-514
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    • 1997
  • We studied the interaction of 4',6-diamidino-2-phenylindole (DAPI) with single stranded poly(dA) using optical spectroscopic methods, including absorption, circular dichroism (CD), and fluorescence spectroscopy. The temperature-dependent conformation of poly(dA) was also investigated. The conformation of poly(dA) varied with temperature, which is explained by the stacking-destacking process of the adenine bases, resulting from the sugar conformation. The hypochromicity and red-shift in the absorption spectroscopy, the lack of CD change in the drag absorption region, and the fluorescence behavior, especially a great accessibility of the I2 quencher to the poly(dA)-bound DAPI, suggest that DAPI binds to the outside of poly(dA). The Job plot for the DAPI-poly(dA) mixture demonstrated that a stoichiometry of one DAPI molecule binds to the one phosphate of poly(dA).

Normal-state charge dynamics of ternary platinum germanide superconductor La2Pt3Ge5

  • Song, S.J.;Sung, N.H.;Cho, B.K.;Moon, S.J.
    • 한국초전도ㆍ저온공학회논문지
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    • 제17권4호
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    • pp.12-15
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    • 2015
  • We report on the infrared spectroscopic studies of the normal-state electronic response of rare-earth ternary platinum germanide superconductor $La_2Pt_3Ge_5$. We analyzed the temperature-dependent optical conductivity spectra using the Drude-Lorentz oscillator model. We found that the two Drude responses with distinct scattering rates are required to explain the charge dynamics at 10 K while a single Drude mode could reproduce the far-infrared conductivity at higher temperatures. Our results indicated the two-band character of the electronic structure and highlighted the disparate temperature evolution of the electrodynamics of the two electronic states.

Photoluminescence Study on O-plasma Treated ZnO Thin Films

  • Cho, Jaewon;Choi, Jinsung;Yu, SeGi;Rhee, Seuk Joo
    • Journal of the Optical Society of Korea
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    • 제17권6호
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    • pp.543-547
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    • 2013
  • A temperature dependent (10K-290K) photoluminescence (PL) study for two differently prepared ZnO thin films (as-grown and O-plasma treated) is presented. Four characteristic peaks were identified for both samples: (i) neutral donor-bound excitons ($D^oX$), (ii) two electron satellites (TES), (iii) phonon replica of $D^oX$ ($D^oX$-1LO), and (iv) donor-acceptor pair transition (DAP). As the sample temperature increased, $D^oX$-1LO and DAP transitions became indistinct. This was accompanied by newly-rising emission of free electron-acceptor transitions (e, $A^o$). The spectral evolution with temperature for as-grown samples also showed the optical emission from free excitons, which became dominant at higher temperatures. Some features related to O-plasma were identified in PL spectra: (i) different positions of TES transitions (28meV lower than $D^oX$ for as-grown samples and 35meV for O-plasma treated samples), (ii) the decrease of spectral intensity in both emissions of $D^oX$ and DAP after O-plasma treatment, and (iii) no noticeable transition from free excitons after the O-plasma treatment.

Optical Characteristics of Ge0.99Sn0.01/Si and Ge/Si Using Photoreflectance Spectroscopy

  • Jo, Hyun-Jun;Geun, So Mo;Kim, Jong Su;Ryu, Mee-Yi;Yeo, Yung Kee;Kouvetakis, J.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.378.2-378.2
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    • 2014
  • We have investigated optical characteristics of $p-Ge_{0.99}Sn_{0.01}$ and Ge films grown on Si substrates using photoreflectance (PR) spectroscopy. The $Ge_{0.99}Sn_{0.01}$ and Ge films were grown by using an ultra-high vacuum chemical vapor deposition and molecular beam epitaxy methods, respectively. PR spectra were measured at 25 K and an extended InGaAs detector was used. By comparing $Ge_{0.99}Sn_{0.01}/Si$ and Ge/Si spectra, we observed the signals related to direct transition and split-off band of $Ge_{0.99}Sn_{0.01}$. The transition energies of $Ge_{0.99}Sn_{0.01}$ and Ge films were approximately 0.74 and 0.84 eV, respectively. Considering the shift of split-off band transition of $Ge_{0.99}Sn_{0.01}$, we suppose that the transition at 0.74 eV is attributed to direct transition between ${\Gamma}$ band and valence band. The temperature- and excitation power-dependent PR spectra were also measured.

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Fabrication of Water-Soluble CuInS2 Quantum Dots by Hot-injection Method and Phase Transfer Strategy

  • Deng, Chong;Fu, Bowen;Wang, Yanlai;Yang, Lin
    • Nano
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    • 제13권10호
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    • pp.1850114.1-1850114.7
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    • 2018
  • Here we report an optimized hot-injection method and a phase transfer strategy for the synthesis of water-soluble $CuInS_2$ QDs with desired properties. The structure and morphology studies demonstrate that the resulting QDs are $CuInS_2$ tetragonal phase with well-defined facets. It is also found that the crystal size gradually increases with the increase of reaction temperature, while the surface of QDs with pre- and post-phase transfer is functionalized with hydrophobic and hydrophilic ligands, respectively. Spectroscopy measurements reveal the size-dependent optical properties of $CuInS_2$ QDs, demonstrating the quantum confinement effect in this system.