• Applied Chemistry for Engineering
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• v.17 no.6
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• pp.625-632
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• 2006

Dependence of the critical micelle concentration (CMC) on temperature is examined from a statistical-mechanical point of view. A simple and primitive model examined in this article yields ln CMC= A+BT+C/T+D ln T with T being temperature and A, B, C, D being constants depending on the properties of the surfactant molecules which comprise the micelles. The resulting equation combines Muller's and Lim's equations, which have already been proven to fit well measured CMC data with temperature. The statistical-mechanical model on micellization discussed in this article provides a theoretical basis on these equations.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.262-263
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• 2011

Flexible electronics, a future technology of electronics, require a low cost integrated circuit that can be built on various types of the flexible substrates. As a potential candidate for this application, a single walled carbon nanotube network is studied as an active device with a scheme of thin film transistor. Transistors are formed on a plastic foil by the Roll-to-Roll (R2R) and the Roll-to-Device (R2D) printing method. For both printing methods, electrical transports for the transistors are presented with the temperature dependence of threshold voltage (V_Th) and mobility from the measured transfer curves at temperatures ranging from 10 K to 300 K. It is observed that ${\mu}=0.044cm^2/V{\cdot}sec$ and V_Th=7.28V for R2R and ${\mu}=0.025cm^2/V{\cdot}sec$ and V_Th=3.10V for R2D, both for the temperature at 300K. Temperature dependence of mobility and V_Th is observed. However for R2R, the temperature dependence of V_Th is constant. It is the difference between, R2R and R2D.

• Journal of the Korean Institute of Gas
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• v.15 no.2
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• pp.75-81
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• 2011

For the safe handling of cyclohexane, the explosion limit at $25^{\circ}C$ and the temperature dependence of the explosion limits were investigated. Flash point and AIT(autoignition temperature) for cyclohexane were experimented. By using the literatures data, the lower and upper explosion limits of cyclohexane recommended 1.0 Vol% and 9.0 Vol%, respectively. Moreover lower flash points of cyclohexane recommended $-20^{\circ}C$. It was measured relationship between the AITs and the ignition delay times by using ASTM E659-78 apparatus for cyclohexane, and the experimental AIT was $255^{\circ}C$. The new equations for predicting the temperature dependence of the explosion limits of cyclohexane is proposed. The values calculated by the proposed equations were a good agreement with the literature data.

• Journal of the Korean Magnetics Society
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• v.5 no.3
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• pp.175-178
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• 1995

The temperature dependence of $^{23}Na$ nuclear magnetic resonance in a $NaMnCl_{3}$ single crystal grown by the Czochralski method has been investigated by employing a Bruker FT NMR spectrometer operating at 4.7 T. The quadrupole coupling constant of $^{23}Na$ in $NaMnCl_{3}$ increases as the temperature increases. The temperature dependence of $e^{2}qQ/h$ may be fitted with a linear equation of the form $e^{2}qQ/h=155+0.117(T-T_{r})\;kHz$ for the temperature range of 140-380 K.

• Bulletin of the Korean Chemical Society
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• v.7 no.3
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• pp.196-200
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• 1986

The solvent change and salt do not affect the fluorescence quantum yield of 1,3-dimethylnaphtho[1,2-e]uracil indicating the considerable energy gap between the lowest singlet $({\pi},\;{\pi}^{\ast})\;and\;(n,\;{\pi}^{\ast})$ states in the compound. The results are consistent with the strong quenching of fluorescence by ethyl iodide. Fluorescence quantum yield is nearly independent of temperature, probably due to the relatively inefficient internal conversion. Unusual spectral difference is observed in isopentane and ethanol at 77K. The temperature dependence of emission in isopentane and in ethanol suggests that the increase of charge transfer character by the conformational change in isopentane leads to the structureless and red-shifted fluorescence, while in ethanol the decrease of the charge transfer character by the hydrogen bonding interaction results in the structured and blue-shifted fluorescence along with phosphorescence at the low temperature. Temperature dependence of emission in poly(methylmethacrylate) matrix indicates that $T_1{\to}S_0$ radiationless decay is an important process responsible for the strong temperature dependence of phosphorescence.

• Journal of the Korean Society of Safety
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• v.8 no.4
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• pp.27-40
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• 1993

High temperature tensile tests, steady state creep tests, Internal stress tests and creep rupture tests using A17075 alloy( $T_{6}$ ) were performed over the temperature range of 9$0^{\circ}C$~50$0^{\circ}C$ (0.4 $T_{m}$ ~0.85 $T_{m}$ ) and stress range of 0.64~17.2(kgf/$\textrm{mm}^2$). The main results obtained in this paper were as follows. (1) The activation energies for yielding at the temperature of 0.4 $T_{m}$ ~0.75 $T_{m}$ were calculated to be 25.7~36.5kcal/mol, which were nearly equal to the activation energies for creep. (2) At around the temperature of 9$0^{\circ}C$~12$0^{\circ}C$ and under the stress level of 10~17.2(kgf/$\textrm{mm}^2$), and at around the temperature of 200~41$0^{\circ}C$ and under the stress level of 1.53~9.55(kgf/$\textrm{mm}^2$) and again at around the temperature of 470~50$0^{\circ}C$ and under the stress level of 0.62~l.02(kgf/$\textrm{mm}^2$), the applied stress dependence of steady state creep rate $n_{measu}$ measured were, respectively, 3.15, 6.62 and 1.1, which were in good agreement the calculated stress dependence $n_{ealeu}$ obtained by the difference of the applied stress dependence of the Internal stress and the ratio of the internal stress to the applied stress. (3) At the temperature range of 0.4~0.43 $T_{m}$ , and at the temperature range of 0.52~0.75 $T_{m}$ and again at the temperature range of 0.82~0.85 $T_{m}$ , the activation energies $Q_{measu}$ obtained by steady state creep rate, respective, 26. 16, 34.9, 36.2 and 36.1kcal/mol, which were in good agreement with those obtained with the activation energies under constant effective stress and the temperature dependence of Internal stress. (4) At the temperature range of the 0.52~0.73 $T_{m}$ and under the stress level of 1.53~9.55(kgf/$\textrm{mm}^2$), the stress dependence of rupture life(n’) measured was 6.3~6.6, which was in good agreement with the stress dependence of steady state creep rate(n). And at the same condition the activation energy for rupture( $Q_{f}$ ) measured was 32.0~36.9kca1/mol, which was also in good agreement with the activation energy obtained by steady state creep rate ( $Q_{c}$ ). (5) The rupture life( $t_{f}$ ) might be represented by athermal process attributed to the difference of the applied stress dependence of the internal stress and the ratio of the internal stress to the applied stress, and the thermal activated process attributied to the temperature dependence of the internal stress as $t_{f}$ = A'$\sigma$$_{a}$ ｛n(1-d $\sigma$$_{i}$ /d $\sigma$$_{a}$ )/(1-$\sigma$$_{i}$ / $\sigma$$_{a}$ )｝.exp[｛ $Q_{c}$ $^{*}$-( $n_{o}$ R $T^2$/ $E_{(T)}$) (d $E_{(T)}$/dT) - ( $n_{0}$ R $T^2$/ $\sigma$$_{a}$ - $\sigma$$_{i}$ ) (d $\sigma$$_{i}$ /dT)｝/RT]. (6) The relationship betwween Larson-Miller rupture parameter and logarithmic stress was linearly decreased, so creep rupture life of Al 7075 alloy seemed to be predicted exactly with Larson-Miller parameter.meter.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.437-442
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• 1991

Temperature and atmosphere dependence of electrical conduction of the metal Cu, Ag, Au films, vaccum evaporated on glass, was investigated. The structural changes of the metal films were examined by SEM and high temperature XRD. The electrical resistance slightly increased with initial temperature increase up to the inflection point and decreased to minimum value, after this rapidly increased with further temperature increased below minimum. These phenomena were caused by the thermally induced film failure as a result of the mass transport. The temperature for the film failure increased in the order of O2, Air, Vacuum, N2, Ar in Cu, Ag films and Air, Vacuum, N2, Ar in Au film. The increase of resistance at the lower temperature range was attributed to the lattice distortion by disordered crystal structure, while the decreasing resistance was attributed to the removal of structural defects and film densification.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.5-8
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• 2001

This paper describes the development of SiC MOSFET model for high temperature applications. The temperature dependence of the threshold voltage and mobility of SiC MOSFET is quite different from that of silicon MOSFET. We developed the empirical temperature model of threshold voltage and mobility of SiC MOSFET and implemented into HSPICE. Using this model the MOSFET Id-Vds characteristics as a function of temperature are simillated. Also the SiC CMOS operational amplifieris designed using this model and the temperature dependence of the frequency response, transfer characteristics and slew rate as a function of temperature are analyzed.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.714-716
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• 2005

We studied the dependence of the electrical characteristics of MgO protecting layer on temperature in an AC PDP cell. Careful measurements of the surface resistance of MgO were performed for the temperature range from room temperature to $100^{\circ}C$ with and without the VUV illumination. Experimental results show that the resistivity is affected by not only the temperature but also VUV irradiation. The measurement of wall charge distribution and the address discharge delay time as to the temperature show that the resistivity change of MgO may affect the wall voltage and consequently the discharge delay time.

• Journal of the Korean Society of Industry Convergence
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• v.24 no.4_1
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• pp.411-419
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• 2021

In this study, IGBT_Total_Loss and DIODE_Total_Loss were used to analyze the slope of the junction temperature for each section for temperature and duty variables in order to simply calculate the junction temperature of the power semiconductor (IGBT). As a result of the calculation, IGBT_Max_Junction_Temp and DIODE_Max_Junction_Temp form a proportional relationship with temperature for each duty. This simulation data shows that the power loss of a power semiconductor is calculated in a complex manner according to the current dependence index, voltage dependence index, and temperature coefficient. By applying the slope for each condition and section, the junction temperature of the power semiconductor can be calculated simply.