• Solar Energy
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• v.13 no.1
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• pp.49-58
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• 1993

[ $CdS_{0.46}Se_{0.54}$ ] single crystal was grown by a sublimation method. The crystal structure and the temperature dependence of carrier density and mobility of $CdS_{0.46}Se_{0.54}$ single crystal were studied. Heterojunction solar cells of $n-CdS_{0.46}Se_{0.54}/p-Cu_{2-X}S_{0.46}Se_{0.54}$ were fabricated by the substitution reaction. The spectral response, the J-V characteristics and the conversion efficiency of the $n-CdS_{0.46}Se_{0.54}/p-Cu_{2-X}S_{0.46}Se_{0.54}$ heterojunction solar cells were studied. The open-circuit voltage, short-circuit density, fill factor and conversion efficiency of $n-CdS_{0.46}Se_{0.54}/p-Cu_{2-X}S_{0.46}Se_{0.54}$ heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.48V, $21mA/cm^2$, 0.75 and 9.5%, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.6
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• pp.239-245
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• 2001

$Al/Al_2O_3$composites were prepared from the reaction of mullite preforms and amorphous silica in aluminum melt at $1100^{\circ}C$ for 5 hrs. The chemical reaction between mullite preform and aluminum melt has formed the interconnected microstructure. The metal content of $Al/Al_2O_3$composite was controlled with the variable of the apparent porosity according to the sintering temperature of mullite preforms; $1600^{\circ}C$,$ 1625^{\circ}C$, $1650^{\circ}C$ and $1700^{\circ}C$, the mechanical properties of $Al/Al_2O_3$composite were investigated upon the content of Al. The mullite preform sintered above $1600^{\circ}C$ showed the chemical reaction with the penetrated Al melt, but the mullite sintered at $1600^{\circ}C$ didnt react with aluminum melt owing to the non-wetting of Al melt/mullite preform. The influences of penetration direction on the mechanical properties of composites were considered with the two different models of the perpendicular pattern and the parallel pattern to the direction of Al melt penetration. With the increase of Al metal penetration content, the fracture strength of $Al/Al_2O_3$composite decreased and the fracture toughness of composite increased. The microstructure of $Al/Al_2O_3$composite was determined by the direction of metal penetration, but the fracture strength and fracture toughness of composite didnt show the dependence on metal penetration direction.

• 전기의세계
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• v.28 no.4
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• pp.53-63
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• 1979

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.5
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• pp.345-349
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• 2000

$Al_2O_3/ZrO_2$eutectic fibers were grown by micro-pulling down technique and investigated their microstructure as a function of solidification rate. $Al_2O_3/ZrO_2$eutectic fibers 0.2~2 mm in diameter and 500 mm in length have been grown with a pulling rate of 0.1~15 mm/min. The eutectic microstructures changed as a function of fulling rate from rod-shaped to cellular shape containing some thin lamellar pattern via uniform lamellar structure. Typical lamellar thickness decreased from about 380 nm to 110 nm as the pulling rate increased from 1 mm/min to 15 mm/min. The interlamellar spacing fitted with the inverse-square-root dependence on pulling rate according to $\lambda$= $1{\times}v^{-1/2}$, where $\lambda$ has the dimension in $\mu\textrm{m}$ and v is $\mu\textrm{m}$/s. Hardness value reached 13.1 GPa at 15 mm/min of pulling rate and tensile strength 900 MPa at 10 mm/min were also increased as the interlamellar spacing decreased.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.166-171
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• 2007

We report the magneto-transport properties of an individual single crystalline Bi nanowire grown by a spontaneous growth method. We have successfully fabricated a four-terminal device based on an individual 400-nm-diameter nanowire using plasma etching technique to remove an oxide layer forming on the outer surface of the nanowire. The transverse MR (2496% at 110 K) and longitudinal MR ratios (38% at 2 K) for the Bi nanowire were found to be the largest known values in Bi nanowires. This result demonstrates that the Bi nanowires grown by the spontaneous growth method are the highest-quality single crystalline in the literatures ever reported. We find that temperature dependence of Fermi energy ($E_F$) and band overlap (${\triangle}_0$) leads to the imbalance between electron concentration ($n_e$) and hole concentration ($n_h$) in the Bi nanowire, which is good agreement with the calculated $n_e\;and\;n_h$ from the respective density of states, N(E), for electrons and holes. We also find that the imbalance of $n_e\;and\;n_h$ plays a crucial role in determining magnetoresistance (MR) at T<75 K for $R_T$ and at T<205 K for $R_L$, while mean-free path is responsible for MR at T>75 K for $R_T$ and T>205 K for $R_L$.

• Polymer(Korea)
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• v.36 no.2
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• pp.169-176
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• 2012

Based on our experience in developing resistive humidity sensor, interdigital gold electrodes with different fingers and gaps have been fabricated on a glass epoxy (GE) substrate using screen printing techniques. The basic structure of the electrode consisted of a 3-, 4- and 5-fingers with gaps of 310 and 460 ${\mu}m$. Gold electrode/GE was prepared by first printing silver nanopaste, followed by consecutive electroless plating of Cu, Ni and then Au. Copolymer of [2-(methacryloyloxy)ethyl] dimethyl benzyl ammonium chloride (MDBAC) and methyl methacrylate (MMA) was used as a humidity-sensing polyelectrolyte, which was fabricated by a screen printing method on the Au electrode/GE substrate. The flexible humidity sensor showed acceptable linearity between logarithmic impedance and relative humidity in the range of 20-95%RH, low hysteresis of 1.5%RH, good response and recovery time of 75 sec at 1 V, 1 kHz, and $25^{\circ}C$. Electrode construction had a significant influence on the humidity-sensing characteristics of polymeric humidity sensors. The activation energy between electrode and ion conducting polyelectrolyte plays an important role in explaining the differences of humidity sensing characteristics such as temperature dependence, sensitivity, linearity and hysteresis.

• Polymer(Korea)
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• v.32 no.3
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• pp.230-238
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• 2008

The thermal and optical properties of cellobiose octa(cholestryloxycarbonyl)alkanoates CCCBn, $n=2{\sim}8$,10, the number of methylene units in the spacer) were investigated. All the samples formed monotropic cholesteric phases with left-handed helical structures. CCBn with n=2 or 10, in contrast with CCBn with $3{\leq}n{\leq}8$, did not display reflection colors over the full cholesteric range, suggesting that the helical twisting power of the cholesteryl group highly depends on the length of the spacer connecting the cholesteryl group to the cellobiose chain. The isotropic-cholestropic transition ($T_{ic}$) and glass transition temperatures decreased with increasing n and showed no odd-even effect. The transition entropy at $T_{ic}$ increased with increasing n from 2 up 6, but at n=7 it drops significantly and then increased again with increasing n from 8 to 10. The sharp change at n=7 may be attributed to a difference in arrangement of the side groups. The thermal stability and degree of order in the mesophase and the temperature dependence of the optical pitch observed for CCBn were significantly different from those reported for the cellulose tri(cholesteryloxycarbonyl)alkanoates and glucose penta(cholesteryloxycarbonyl)alkanoates. The results were discussed in terms of the differences in the degree of polymerization, the number of the mesogenic units per mole-glucose unit, and the conformation of the molecules.

• Journal of the Korean Solar Energy Society
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• v.23 no.2
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• pp.59-70
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615{\AA}$ and $11.025{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $5.01\times10^{17}cm^{-3}$ and $245cm^2/V{\cdot}s$ at 293K. respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.7998 eV-($8.7489\times10^{-4}$ eV/K)$T^2$/(T+335K). After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU},\;V_{Se},\;Cu_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Magnetics Society
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• v.10 no.4
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• pp.171-177
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• 2000

Exchange coupling of Co/NiMn bilayers fabricated by RF magnetron sputtering method was studied. We investigated the variation of exchange coupling field (H$\sub$ex/) for different annealing temperature and time. The maximum exchange coupling field was obtained after 13hr annealing at 300 $^{\circ}C$. With respect to deposition sequence, it was demonstrated that NiMn-top bilayers had higher exchange coupling field than NiMn-bottom bilayers. Ta capping layer was shown to be essential in achieving exchange coupling and Auger Electron Spectroscopy (AES) proved that uncapped NiMn/Co bilayers did not have exchange coupling because of oxygen incorporation into film. We also observed the effect of Ta underlayer on exchange coupling. It was found that Ta underlayer had better not be used for attaining higher exchange coupling. XRD analysis showed that Ta underlayer helped bilayers develop texture, but it was not essential to exchange coupling of Co/NiMn bilayers, which is in contrast to NiFe/NiMn system. Furthermore, the NiMn and Co thickness dependence of exchange coupling has been investigated. The exchange coupling strength reached the maximum above 200 ${\AA}$ NiMn thickness and had inversely proportional relation with Co thickness.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.404-411
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• 2015

A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.