• 제목/요약/키워드: Temperature compensation coefficient

검색결과 54건 처리시간 0.03초

Feasibility Study to Actively Compensate Deformations of Composite Structure in a Space Environment

  • Farinelli, Ciro;Kim, Hong-Il;Han, Jae-Hung
    • International Journal of Aeronautical and Space Sciences
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    • 제13권2호
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    • pp.221-228
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    • 2012
  • An active compensation method for the deformation of composite structures using additional controllable metal parts is proposed, and its feasibility is experimentally investigated in a simulated space environment. Composite specimens are tested in a vacuum chamber, which is able to maintain pressure on the order of 10-3 torr and interior temperature in the range of ${\pm}30^{\circ}C$. The displacement-measuring interferometer system, which consists of a heterodyne HeNe laser and an interferometer, is used to measure the displacement of the whole structure. Meanwhile, the strain of the composite part and temperature of both parts are measured by fiber Bragg grating sensors and thermistors, respectively. The displacement of the composite structure is maintained within a tolerance of ${\pm}1{\mu}m$ by controlling the elongation of the metal part, which is bonded to the end of the composite part. Also, the possibility of fiber Bragg grating sensors as control input sensors is successfully demonstrated using a proper corrective factor based on the specimen temperature gradient data.

Accurate Sub-1 V CMOS Bandgap Voltage Reference with PSRR of -118 dB

  • Abbasizadeh, Hamed;Cho, Sung-Hun;Yoo, Sang-Sun;Lee, Kang-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제16권4호
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    • pp.528-533
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    • 2016
  • A low voltage high PSRR CMOS Bandgap circuit capable of generating a stable voltage of less than 1 V (0.8 V and 0.5 V) robust to Process, Voltage and Temperature (PVT) variations is proposed. The high PSRR of the circuit is guaranteed by a low-voltage current mode regulator at the central aspect of the bandgap circuitry, which isolates the bandgap voltage from power supply variations and noise. The isolating current mirrors create an internal regulated voltage $V_{reg}$ for the BG core and Op-Amp rather than the VDD. These current mirrors reduce the impact of supply voltage variations. The proposed circuit is implemented in a $0.35{\mu}m$ CMOS technology. The BGR circuit occupies $0.024mm^2$ of the die area and consumes $200{\mu}W$ from a 5 V supply voltage at room temperature. Experimental results demonstrate that the PSRR of the voltage reference achieved -118 dB at frequencies up to 1 kHz and -55 dB at 1 MHz without additional circuits for the curvature compensation. A temperature coefficient of $60 ppm/^{\circ}C$ is obtained in the range of -40 to $120^{\circ}C$.

Experimental Study on Temperature Dependence of Nitrate Sensing using an ISE-based On-site Water Monitoring System

  • Jung, Dae-Hyun;Kim, Dong-Wook;Cho, Woo Jae;Kim, Hak-Jin
    • 한국농업기계학회:학술대회논문집
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    • 한국농업기계학회 2017년도 춘계공동학술대회
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    • pp.122-122
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    • 2017
  • Recently, environmental problems have become an area of growing interests. In-situ monitoring of water quality is fundamental to most environmental applications. The accurate measurement of nitrate concentrations is fundamental to understanding biogeochemistry in aquatic ecosystems. Several studies have reported that one of the most feasible methods to measure nitrate concentration is the use of Ion Selective-electrodes (ISEs). The ISE application to water monitoring has several advantages, such as direct measurement methodology, high sensitivity, wide measurement range, low cost, and portability. However, the ISE methods may yield inconsistent results where there was a difference in temperature between the calibration and measurement solutions, which is associated with the temperature dependence of ionic activity coefficients in solution. In this study, to investigate the potential of using the combination of a temperature sensor and nitrate ISEs for minimizing the effect of temperature on real-time nitrate sensing in natural water, a prototype of on-site water monitoring system was built, mainly consisting of a sensor chamber, an array of 3 ISEs, an waterproof temperature sensor, an automatic sampling system, and an arduino MCU board. The analog signals of ISEs were obtained using the second-order Sallen-key filter for performing voltage following, differential amplification, and low pass filtering. The performance test of the developed water nitrate sensing system was conducted in a monitoring station of drinking water located in Jeongseon, Kangwon. A temperature compensation method based on two-point normalization was proposed, which incorporated the determination of temperature coefficient values using regression equations relating solution temperature and electrode signal determined in our previous studies.

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CaO첨가$(Ba, Pb)O-Nd_2O_3-TiO_2$ 세라믹스의 고주파 유전특성 (Microwave Dielectric Properties of CaO Added $(Ba, Pb)O-Nd_2O_3-TiO_2$ Ceramics)

  • 윤상옥;최환;김경용
    • 한국세라믹학회지
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    • 제30권2호
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    • pp.101-106
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    • 1993
  • Effects of CaO on microwave dielectric properties of (Ba, Pb)O-Nd2O3-TiO2 ceramic ystem were investigated. As the content of CaO increases, the sintered bulk density decreases due to the decrease of sinterability. However, with increasing the sintering tmperature, the relative dielectric constants increases. This has been attributed on the formation of the 2nd phase inclusion, TiO2(rutile). The Q values increase due to the compensation effect of Ca ions up to 1 wt%, and then decrease due to the interfacial relaxation effects. The temperature coefficient of resonance frequency increases to a positive direction with increasing the amounts of CaO.

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널은 띠간격 묽은 자성반도체 CuAl1-xMnxO2 세라믹스의 구조 및 전자기 특성 (Structural, Electrical and Magnetic Properties of Wide Bandgap Diluted Magnetic Semiconductor CuAl1-xMnxO2 Ceramics)

  • 지성화;김효진
    • 한국재료학회지
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    • 제14권8호
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    • pp.595-599
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    • 2004
  • We investigated the structural, electrical and magnetic properties of Mn-doped $CuAlO_2$ delafossite ceramics ($CuAl_{1-x}Mn_{x}O_2,\;0\le\;x\;\le0.05$), synthesized by solid-state reaction method in an air atmosphere at a sintering temperature of $1150^{\circ}C$. The solubility limit of Mn ions in delafossite $CuAlO_2$ was found to be as low as about 3 $mol\%$. Positive Hall coefficient and the temperature dependence of conductivity established that non-doped $CuAlO_2$ ceramic is a variable-range hopping p-type semiconductor. It was found that the Mn-doping in $CuAlO_2$ rapidly reduced the hole concentration and conductivity, indicating compensation of free holes. The analysis of the magnetization data provided an evidence that antiferromagnetic superexchange interaction is the dominant mechanism of the exchange coupling between Mn ions in $CuAl_{1-x}Mn_{x}O$ alloy, leading to an almost paramagnetic behavior in this alloy.

고압 적층 칩 캐패시터의 유전체 두께 및 내부전극 형상에 따른 AC, DC 절연 파괴 특성 (The AC, DC Dielectric Breakdown Characteristics according to Dielectric Thickness and Inner Electrode Pattern of High Voltage Multilayer Ceramic Capacitor)

  • 윤중락;김민기;이석원
    • 한국전기전자재료학회논문지
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    • 제21권12호
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    • pp.1118-1123
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    • 2008
  • High voltage multilayer ceramic capacitors (MLCCs) are classified into two classes-those for temperature compensation (class I) and high dielectric constant materials (class II). We manufactured high voltage MLCC with temperature coefficient characteristics of C0G and X7R and studied the characteristics of electric properties. Also we studied the characteristics of dielectric breakdown voltage (V) as the variation of thickness in the green sheet and how to pattern the internal electrodes. The dielectric breakdown by electric field was caused by defects in the dielectric materials and dielectric/electrode interface, so the dielectric thickness increased, the withstanding voltage per unit (E) thickness decreased. To overcome this problem, we selected the special design like as floating electrode and this design affected the increasing breakdown voltage(V) and realized the constant withstanding voltage per unit thickness(E). From these results, high voltage application of MLCCs can be expanded and the rated voltage can also be develop.

Dysprosium과 Erbium이 동시 첨가된 X7R MLCC용 페로브스카이트 BaTiO3의 전기적특성과 온도안정성 (Electrical Properties and Temperature Stability of Dysprosium and Erbium Co-doped Barium Titanate with Perovskite Structure for X7R MLCCs)

  • 노태민;김진성;류지승;이희수
    • 한국세라믹학회지
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    • 제48권4호
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    • pp.323-327
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    • 2011
  • The effects of $Dy_2O_3$ and $Er_2O_3$ co-doping on electrical properties and temperature stability of barium titanate ($BaTiO_3$) ceramics were investigated in terms of microstructure and structural analysis. The dielectric constant and the insulation resistance (IR) of 0.7 mol% $Dy_2O_3$ and 0.3 mol% $Er_2O_3$ co-doped dielectrics had about 60% and 20% higher than the values of undoped one, respectively, and the temperature coefficient of capacitance (TCC) met the X7R specification. The addition of $Dy_2O_3$ contributed to electrical properties caused by increase of tetragonality; however, preferential diffusion of $Dy^{3+}$ ions toward A site in $BaTiO_3$ grain exhibited an adverse effect on temperature stability by grain growth. On the other hand, The $Er_2O_3$ addition in $BaTiO_3$ could affect the TCC behavior and the IR with suppression of grain growth caused by reinforcement of grain boundary and electrical compensation. Therefore, the enhanced electrical properties and temperature stability through the co-doping could be deduced from the increase of tetragonality and the suppression of grain growth.

상온 진공 분말 분사법에 의한 NiMn2O4계 NTC Thermistor 후막제작 및 특성평가 (Fabrication and Characterization of NiMn2O4 NTC Thermistor Thick Films by Aerosol Deposition)

  • 백창우;한귀팡;한병동;윤운하;최종진;박동수;류정호;정대용
    • 한국재료학회지
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    • 제21권5호
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    • pp.277-282
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    • 2011
  • Negative temperature coefficient (NTC) materials have been widely studied for industrial applications, such as sensors and temperature compensation devices. NTC thermistor thick films of $Ni_{1+x}Mn_{2-x}O_{4+{\delta}}$ (x = 0.05, 0, -0.05) were fabricated on a glass substrate using the aerosol deposition method at room temperature. Resistance verse temperature (R-T) characteristics of the as-deposited films showed that the B constant ranged from 3900 to 4200 K between $25^{\circ}C$ and $85^{\circ}C$ without heat treatment. When the film was annealed at $600^{\circ}C$ 1h, the resistivity of the film gradually decreased due to crystallization and grain growth. The resistivity and the activation energy of films annealed at $600^{\circ}C$ for 1 h were 5.203, 5.95, and 4.772 $K{\Omega}{\cdot}cm$ and 351, 326, and 299 meV for $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$, $NiMn_2O_4$, and $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$, respectively. The annealing process induced insulating $Mn_2O_3$ in the Ni deficient $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$ composition resulting in large resistivity and activation energy. Meanwhile, excess Ni in $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$ suppressed the abnormal grain growth and changed $Mn^{3+}$ to $Mn^{4+}$, giving lower resistivity and activation energy.

무선 광 전송용 APD 전력 공급기와 원통형 레이저형상 보정용 마이크로 렌즈 기술 (The Improved Power Supply for APD and Efficiently Designed Cylindric Micro-lens for a Wireless Optical Transmission System)

  • 김만호
    • 대한전기학회논문지:시스템및제어부문D
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    • 제54권11호
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    • pp.654-659
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    • 2005
  • An improved power supply for APD(Avalanche Photo Diode) with a received optical power monitoring circuit allows the received optical power increase temporary without of the degradation of the electrical signal. For the cost reduction and simple fabrication, an improved power supply has been proposed that it was designed for driving a APD as a receiving device of a wireless optical transmission system. It was demonstrated that it was possible to improve a dynamic range by compensating the temperature coefficient of the APD up to 1.0 V/$^{\circ}C$ through the power supply. Also, for an efficient transmission at the receiver end, a simple structure of a single cylindrical micro-lens configuration was used in conjunction with the laser diode to partially compensate a laser beam ellipticity. For this purpose, an astigmatism introduced by the micro-lens is utilized for the additional compensation of the beam ellipticity at the receiver end. In this paper, it is demonstrated that an efficient beam shaping is realized by using the proposed configuration consisting of the single lens attached to the laser diode.

FBG 광섬유센서가 내장된 7연 강연선을 이용한 포스트텐션 UHPC 교량의 긴장력 장기모니터링 (Long Term Monitoring of Prestressing Tension Force in Post-Tension UHPC Bridge using Fiber Optical FBG Sensor)

  • 김현우;김재민;최송이;박성용;이환우
    • 한국전산구조공학회논문집
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    • 제28권6호
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    • pp.699-706
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    • 2015
  • 이 연구에서는 FBG센서가 내장된 강연선을 포스트텐션 UHPC 교량(길이 11.0m, 폭 5.0m, 높이 0.6m)에 적용하고 약 1년간의 긴장력 장기모니터링 결과를 정리하였다. 그리고 초기 도입 긴장력과 차량재하시험을 통하여 콘크리트 내부 강연선의 긴장력 변화를 계측하고 계측결과에 대한 분석을 수행하였다. 연구결과, 이 연구에서 제안하는 콘크리트 내부 긴장력 측정방법이 공영 중인 교량에서 외력으로 인한 콘크리트 내부의 작은 프리스트레스 변화를 효과적으로 측정할 수 있음을 알 수 있었다. 아울러 장기 계측결과를 이용하여 응력변화에 의한 유효변형률을 정확하게 얻기 위해서는 온도보정에 사용되는 열팽창계수의 선택이 매우 중요함을 알 수 있었다.