• Korean Journal of Materials Research
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• v.18 no.4
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• pp.169-174
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• 2008

The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.123-130
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• 1997

In this study, (Sr.Pb.Ca)TiO3-Bi2O3.3TiO2(SPCT) systems were investigated to develop a new material which has a high dielectric constant, a low dielectric loss and a small TCC(Temperature Coefficient of Capa-citance), and are suitable for high voltage applications as a function of the additions of Bi2O3.3TiO2 from 5 mol.% to 9 mol.%. The result obtained from our investigation showed that up to 6 mol.% Bi2O3.3TiO ad-dition the dielectric constant increased and it deteriorated at higher concentrations with increasing amount of the acicular grains. As a result of some dopants (SiO2, Nb2O3, MnO2) addition to SPCT, the specimens with MnO2 showed good dielectric properties. The dielectric constant decreased, but the TCC was improved with the addition of MnO2 from 0.15 wt.% to 0.45 wt. %.

• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.273-277
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• 2012

The vacuum drying process for drying of paper in current transformers was modeled with an aim to develop an understanding of the drying mechanism involved and also to predict the water collection rates. A molecular as well as macroscopic approach was adopted for the prediction of drying rate. Ficks law of diffusion was adopted for the prediction of drying rates at macroscopic levels. A steady state and dynamic mass transfer simulation was performed. The bulk diffusion coefficient was calculated using weight loss experiments. The accuracy of the solution was a strong function of the relation developed to determine the equilibrium moisture content. The actually observed diffusion constant was also important to predict the plant water removal rate. Thermo gravimetric studies helped in calculating the diffusion constant. In addition, simulation studies revealed the formation of perpetual moisture traps (loops) inside the CT. These loops can only be broken by changing the temperature or pressure of the system. The change in temperature or pressure changes the kinetic or potential energy of the effusing vapor resulting in breaking of the loop. The cycle was developed based on this mechanism. Additionally, simulation studies also revealed that the actual mechanism of moisture diffusion in CT's is by surface jumps initiated by surface diffusion balanced against the surrounding pressure. Every subsequent step in the cycle was to break such loops. The effect of change in drying time on the electrical properties of the insulation was also assessed. The measurement of capacitance at the rated voltage and one third of the rated voltage demonstrated that the capacitance change is within the acceptance limit. Hence, the new cycle does not affect the electrical performance of the CT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.30-32
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• 2005

The effects of mole ratio and Ti-ion on the dielectric properties and microstructure of modified $CaZrO_3$ composition such as $(Ca_{0.7}Sr_{0.3})_m(Ti_yZr_{1-y})O_3$ were investigated. Ti ions substituted on Zr-sites in these modified $CaZrO_3$ composition strongly affect the sintering density and microstructure of the fired ceramic body. With increasing the amount of Ti substituted on Zr-sites, the sintered density rapidly increased and the dense microstructures were obtained for the compositions having mole ratio of 1.01, whereas the sintered density and microstructures are nearly constant with the content of Ti-ion for the compositions having mole ratio of 0.99. With increasing the content of Ti ion, the curve of TCC (temperature coefficient of capacitance) as a function of temperature rotated clockwise and satisfied the COG characteristics for both of compositions with mole ratio of 0.99 and 1.01. The content of Ti ion seems to be more effective than mole with respect to the controlling of firing and TCC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.705-708
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• 2001

The effect of grinding on the synthesis of LaAO$_3$ceramics was investigated. The mixture ground by plantary ball mill showed 70nm particle size (wet ball mill or unground=0.5 $\mu$m). Monophase LaAlO$_3$powders were formed when ground samples were heated at 100$0^{\circ}C$, however unground samples required temperatures above 130$0^{\circ}C$. Density of the ground samples sintered at 140$0^{\circ}C$ showed 98.3% of theoretical density (unground=93.5% at 150$0^{\circ}C$). Dielectric constant of the ground samples($\varepsilon$r=22.4) showed higher values than that of the unground samples($\varepsilon$r=20.32). Temperature coefficient of capacitance($\tau$$_{c}$) and dielectric loss (tan$\delta$) of the ground samples were similar to those of unground samples.s.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.129-139
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• 2018

The effects of N doping concentration and dopant moieties on the electrochemical properties of nanoporous graphene and their dependence on annealing temperature are investigated. Four types of N moieties - amide, amine, graphitic-N, and oxidized-N - are obtained, which transformed into pyridinic-N and pyrrolic-N upon annealing. The diffusion coefficient (D') of the ions in the electrode is the maximum at $400^{\circ}C$ because of a high level of N doping, whereas the second highest D0 value is obtained at $700^{\circ}C$ owing to a high level of reduction and N doping. The highest specific capacitance is obtained for the sample annealed at $400^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.25-28
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• 1993

In this study, the dielectric properties of (Sr$\sub$1-x/Ca$\sub$x/)TiO$_3$+yNb$_2$O$\sub$5/(0.1 x 0.3, 0.004 y 0.008) ceramic capacitor were investigated. The specimen was sintered for 3hr at 1350$^{\circ}C$ in gas(N$_2$) atmosphere. The reduced specimen fared at 1200$^{\circ}C$ in air. The used specimens had the apparent permittivity of 3${\times}$10$^4$∼4${\times}$10$\^$5/, tan$\delta$ of 0.05 -0.2, and insulating resistance of 10$\sub$9/∼10$\^$12/ $\Omega$.cm. The specimens had the stable temperature coefficient of capacitance.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1061-1064
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• 2003

In this paper, we deposited A1$_2$O$_3$ thin film using atomic layer deposition(ALD) method on Ti and fabricated metal-insulator-metal(MIM) capacitor. In the result of this study, the typical deposition rate was about 1.12$\AA$/cycle. About 30 nm of Ti was consumed during deposition and TiO$_{x}$ was formed at the interface of A1$_2$O$_3$ and Ti. Its surface roughness was 1.54nm. The leakage current density was 1.5 nA/$\textrm{cm}^2$. The temperature coefficient of capacitance(TCC) of MIM capacitor was 41 ppm/$^{\circ}C$ at 1MHz and 100 ppm/$^{\circ}C$ at 100 kHz.z.

• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.635-642
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• 1993

To obtain a higher dielectric constant material, we investigated Ca substitution for Pb in PbZrO3. In this study, the four mixtures of (Pb0.68Ca0.32)ZrO3, (Pb0.65Ca0.37)ZrO3, (Pb0.63Ca0.37)ZrO3, and (Pb0.60Ca0.40)ZrO3 were prepared by coprecipitation reaction of Pb(NO3)2, ZrOCl2, and CaCl2 with (NH4)2CO3 and NH4OH in aqueous solution. The (Pb1-xCax)ZrO3 with different x mole fractions (x=0.35, 0.37) showed not only high dielectric constant, but also high Q values and low temperature coefficient of the capacitance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.39-45
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• 2004

Fine LaAlO$_3$ powders wore successfully synthesized from La$_2$O$_3$ and ${\gamma}$ $Al_2$O$_3$ powders milling for 10∼50 hours via the high energy milling technique (mechanochemical method) in room temperature and air. The particle size of LaAlO$_3$ powder were estimated from XRD patterns and SEM images to be 160∼180 nm. The LaAlO$_3$ ceramics arc derived for the synthesized powders (milling for 10, 30 and 50 hours) by sintering at 140$0^{\circ}C$ and 150$0^{\circ}C$. The micrographs of grains showed an agglomeration and the degree of agglomeration increased with the milling time. The LaAlO$_3$ made from synthesized powders milling for 50 hours can be sintered to 99.5％ of theoretical density at 150$0^{\circ}C$ for 1 hour. These ceramics exhibits a dielectric constant of 20, a dielectric loss of 0.0003 and a temperature coefficient of capacitance of 15 ppm/$^{\circ}C$ at 1 MHz.