• 제목/요약/키워드: Temperature Coefficient of Resistance(T.C.R)

검색결과 11건 처리시간 0.029초

탄소나노튜브 소재의 정밀 수동소자 적용을 위한 한계 정격전력 용량에 관한 연구 (A Study on the Limited Rate Power Capacity for Applications for Precision Passive Devices Based on Carbon Nanotube Materials)

  • 이선우
    • 한국전기전자재료학회논문지
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    • 제35권3호
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    • pp.269-274
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    • 2022
  • We prepared carbon nanotube (CNT) paper by a vacuum filtration method for the use of a chip-typed resistor as a precision passive device with a constant resistance. Hybrid resistor composed of the CNT resistor with a negative temperature coefficient of resistance (T.C.R) and a metal alloy resistor with a positive T.C.R could lead to a constant resistance, because the resistance increase owing to the temperature increase at the metal alloy and decrease at the CNT could counterbalance each other. The constant resistance for the precision passive devices should be maintained even when a heat was generated by a current flow resulting in resistance change. Performance reliabilities of the CNT resistor for the precision passive device applications such as electrical load limit, environmental load limit, and life limit specified in IEC 60115-1 must be ensured. In this study, therefore, the rated power determination and T.C.R tests of the CNT paper were conducted. -900~-700 ppm/℃ of TCR, 0.1~0.2 A of the carrying current capacity, and 0.0625~0.125 W of the rated power limit were obtained from the CNT paper. Consequently, we confirmed that the application of CNT materials for the precision hybrid passive devices with a metal alloy could result in a better performance reliability with a zero tolerance.

저항 온도계수와 방열 구조설계에 따른 션트 고정 저항의 전기적 특성 (Electrical Properties of Temperature Coefficient of Resistance and Heat Radiation Structure Design for Shunt Fixed Resistor)

  • 김은민;김현창;이선우
    • 한국전기전자재료학회논문지
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    • 제31권2호
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    • pp.107-111
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    • 2018
  • In this study, we designed the temperature coefficient of resistance (TCR) and heat radiation properties of shunt fixed resistors by adjusting the atomic composition of a metal alloy resistor, and fabricated a resistor that satisfied the designed properties. Resistors with similar atomic composition of copper and nickel showed low TCR and excellent shunt fixed resistor properties such as short-time overload, rated load, humidity load, and high temperature load. Finally, we expect that improved sensor accuracy will be obtained in current-distribution-type shunt fixed resistor for IoT sensors by designing the atomic composition of the metal alloy resistor proposed in this work.

IC용 초정밀 박막저항소자의 제조와 특성연구 (Preparation of Precision Thin Film Resistor Sputtered by Magnetron Sputtering)

  • 하흥주;장두진;문상용;박차수;조정수;박정후
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1994년도 하계학술대회 논문집 C
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    • pp.1236-1238
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    • 1994
  • TiAlN thin films were prepared by a multi target r.f magnetron sputtering system under different conditions. We have investigated the resistivity and T.C.R. (Temperature Coefficient of Resistance) characteristics of TiAlN films deposited on $Al_2O_3$ and glass substrates by sputtering in an $Ar:N_2$ gas mixture. We used Al and Ti metal as Target Material and $Ar:N_2$ gas as working gas. We varied the partial pressure ratio of $N_2/Ar$ from 0.2/7 to 1.0/6.2 (SCCM). And the R.F power of Ti and Al Target also were varied as 160/240, 200/200 and 240/160(W). In this experiment, we can get the precision thin film resistor with a very low T.C.R. (Temperature Coefficient of Resistance) below 25 ppm ${\Omega}/^{\circ}C$.

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바나디움 주화물 반도체에 의한 발진현상에 관한 연구 (A Study on the Oscillation of Metal Vanadium Oxide Semiconductor)

  • 이종헌;홍창희;이화용
    • 대한전자공학회논문지
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    • 제16권3호
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    • pp.9-18
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    • 1979
  • 본 논문에서는 바나디움 주화물을 사용한 새로운 반도체 소자인 C.T.R을 제조하여 그외 전기적 특성을 조사하였다. 그 실험결과는 다음과 같다. (1) 제조될 C.T.R의 저항급변계수 는 3정도였고, (2) 의 값은 환원시간과 급냉시간에 크게 의존하였으며, (3) 의 큰 값을 갖는 C.T.R은 짧은 switching현상을 갖는다.

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BMS 정밀도 향상을 위한 셀 밸런싱용 션트 고정저항의 허용오차 저감 방법 (A Method of Reducing a Tolerance of a Shunt Resistor for Balance of the Battery Cell to Improve a Precision of BMS)

  • 김은민;손미라;강창룡
    • 전기학회논문지
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    • 제67권8호
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    • pp.1055-1061
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    • 2018
  • Recently, due to the rapid development of electric vehicle and energy storage system, it is emphasized for battery management system to be needed and to be improved. BMS carries out various movement for optimization the use of the energy and safe use of secondary battery, these movement of BMS start at high wattage shunt fixed resistor which performs a function for detecting current among the BMS components. In addition, for the safe operation of secondary battery, the reliability of current voltage variation detected from shunt should be secured, and for corresponding characteristics, the quality of Temperature coefficient of resistance for BMS shunt and the quality of Thermo electromotive force all must be excellent. For these reasons, this study comes up with the stabilization plan for thermo electromotive force and temperature coefficient of resistance of BMS shunt resistor which is key to secondary battery operation.

Pt/Cr 이중층을 이용한 미세 발열체의 제작과 발열특성 (A thermal properties of micro hot-plate fabricated by using the Pt/Cr bilayer)

  • 이승환;서임춘;성영권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 하계학술대회 논문집 C
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    • pp.1982-1984
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    • 1996
  • In this paper, we have evaluated the physical characteristicsof the Pt/Cr bilayer, fabricated the micro hot plate by using the Pt/Cr bilayer and E-beam evaporated oxide as a passivation layer, and simulated the thermal distribution by using the commercial software FIDAP. From the researches the sheet resistance of Pt/Cr bilayer didn't be affected by the Cr layer thickness. This results was considered due to the Cr-oxide resided at the interface between Pt and Cr layer. After manufacturing the hot plate, we measured its temperature by type k thermo-couple and I.R. thermo-vision system. In those experiments, the emission coefficient( ${\varepsilon}$ ) of the E-beam evaporated oxide was 0.5 and the temperature of centural region was reached about $305\;^{\circ}C$ at 1.3 watts. The temperature simulation obtained by FIDAP commercial package stewed that the temperature of centural region was about $311\;^{\circ}C$ after 5 sec.

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산화석 금속피막저항기에 관한 연구 (A Study on the Deposition of Tin Oxide Resistance Films through the Chemical Vapour Reaction Process)

  • 정만영;박계영
    • 대한전자공학회논문지
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    • 제4권1호
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    • pp.3-12
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    • 1967
  • 증기반응법에 의한 산화석금속피막저항기(Tin Oxide Film Resistor)의 제법을 연구하고 이방법을 이용하여 제조한 저항피막의 전기적 성질을 관찰하였다. 이때 봉상의 파이렉스 유리(Pyrex glass rod) 표면에 산화석피막을 입혔다. 이 방법은 균질한 저항피막을 쉽게 얻을 수 있고, 진공계를 필요하지 않으므로 대량생산에 적합한 제법의 기초가 된다고 할수 있다. 본제법에 의하여 만든 제품중 표면저항 25ohm/sq에서 저항온도계수(T.C.R) 12ppm을 얻었다.

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반밀폐형 퓨즈의 차단용량 상승을 위한 Fe-Ni 합금 가용체의 형상 및 퓨즈링크 구조 설계 (Design of Fuse-Link Structure & Fe-Ni Alloy Element's Shape to Increase an Interrupt Rating of a Semi-Enclosed Type Fuse)

  • 김성주;김도훈;강창룡
    • 전기학회논문지
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    • 제67권5호
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    • pp.644-650
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    • 2018
  • According to a miniaturization and integration of electric device, a little size of fuse satisfying the current carrying capacity as well as an explosive tolerance and current interrupt rating are required. Fe-Ni alloy is applied to decrease an oxidation of fuse elements. A resistance and T.C.R(temperature coefficient of resistance) of a fuse are analyzed by changing a content of Ni And full rated current I-T curve from 1A to 6.3A has been tested. In order to an explosive energy, a straight wire type is selected to reduce a fuse melting time. An interrupt rating test was conducted by changing a content of Ni and the optimal content of Ni is to be 40%.

상온 진공 분말 분사법에 의한 NiMn2O4계 NTC Thermistor 후막제작 및 특성평가 (Fabrication and Characterization of NiMn2O4 NTC Thermistor Thick Films by Aerosol Deposition)

  • 백창우;한귀팡;한병동;윤운하;최종진;박동수;류정호;정대용
    • 한국재료학회지
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    • 제21권5호
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    • pp.277-282
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    • 2011
  • Negative temperature coefficient (NTC) materials have been widely studied for industrial applications, such as sensors and temperature compensation devices. NTC thermistor thick films of $Ni_{1+x}Mn_{2-x}O_{4+{\delta}}$ (x = 0.05, 0, -0.05) were fabricated on a glass substrate using the aerosol deposition method at room temperature. Resistance verse temperature (R-T) characteristics of the as-deposited films showed that the B constant ranged from 3900 to 4200 K between $25^{\circ}C$ and $85^{\circ}C$ without heat treatment. When the film was annealed at $600^{\circ}C$ 1h, the resistivity of the film gradually decreased due to crystallization and grain growth. The resistivity and the activation energy of films annealed at $600^{\circ}C$ for 1 h were 5.203, 5.95, and 4.772 $K{\Omega}{\cdot}cm$ and 351, 326, and 299 meV for $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$, $NiMn_2O_4$, and $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$, respectively. The annealing process induced insulating $Mn_2O_3$ in the Ni deficient $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$ composition resulting in large resistivity and activation energy. Meanwhile, excess Ni in $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$ suppressed the abnormal grain growth and changed $Mn^{3+}$ to $Mn^{4+}$, giving lower resistivity and activation energy.

내환원 $BaTiO_3$ 세라믹스의 PTCR특성 및 미세구조에 대한 Attrition milling과 하소온도가 미치는 영향 (The effect of Attrition milling and calcining temperature on the microstructure and electrical properties of non-reduction PTCR-$BaTiO_3$ Ceramics)

  • 이정철;명성재;전명표;조정호;김병익;신동욱
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.288-288
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    • 2007
  • 본 연구에서 내환원성 $BaTiO_3$의 PTCR(Positive Temperation Coefficient Resistance) 특성 및 미세구조에 대한 분쇄 및 출발 원료들의 하소 조건의 영향을 연구하였다. $BaCO_3$, $TiO_2$, $CeO_2$를 Attrition milling 하여 1차 혼합 및 분쇄한 후 건조하여 혼합분말을 얻었으며, $(Ba_{1-x}Ce_x)TiO_3$를 합성하기 위하여 $1000^{\circ}C{\sim}1200^{\circ}C$ 공기중에서 하소하였다. 각 하소온도에서 제조한 $(Ba_{1-x}Ce_x)TiO_3$에 첨가제를 2차 혼합하고 초미분쇄하여 분말을 제조하였다. 직경 5mm 의 시편을 제조하여 환원 및 재산화 분위기에서 소결을 한 후 상온저항값 및 R-T특성을 측정하였고 SEM 을 통해 미세구조를 관찰하였다. 또한 하소 후 온도에 따른 상분석을 XRD를 통하여 분석하였다. 그 결과 하소온도가 증가함에 따라 상온저항값은 감소하는 경황을 보였으며 PTC특성은 감소하다가 증가하는 경향을 보였다. 초미분쇄에 따른 입자크기는 $1{\mu}m$이하로 작아졌으며 미립화가 됨에 따라 하소/소결온도에 앙향을 줄 것으로 사료된다.

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