• 제목/요약/키워드: Temperature Coefficient of Capacitance

검색결과 65건 처리시간 0.033초

소성온도와 적층수가 ZnO계 적층형 바리스터의 미세구조와 전기적 특성에 미치는 영향 (Effect of firing temperature and degree of lamination on microstructure and electrical properties of ZnO-based multilayered ceramic chip varistors)

  • 김철홍;김종화;김진호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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    • pp.126-129
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    • 2003
  • The electrical properties of a ZnO-based multilayered chip varistor (abbreviated as MLV) were studied as functions of firing condition and the degree of lamination. The fundamental varistor characteristics such as nonlinear coefficient and breakdown voltage were independent of the degree of lamination. As the number of the laminated ceramic sheets increased, however, not only the energy handling capability but also the capacitance and the leakage current which are relevant to delayed response to the voltage surge and the pre-breakdown energy loss, respectively, increased. With the increase of firing temperature between $950^{\circ}C$ and $1150^{\circ}C$, both the capacitance and the leakage current of the MLV increased due mainly to the grain growth of ZnO and the volatilization of $BiO_2O_3$. High performance MLVs with clear electrode pattern were obtained at the firing temperature range of $l000{\sim}1050^{\circ}C$ in this experiment.

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DRAM 의 저전력 구현을 위한 안정한 기판전압 발생기 설계에 관한 연구 (A study on the Design of a stable Substrate Bias Generator for Low power DRAM's)

  • 곽승욱;성양현곽계달
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1998년도 추계종합학술대회 논문집
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    • pp.703-706
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    • 1998
  • This paper presents an efficient substrate-bias generator(SBG)for low-power, high-density DRAM's The proposed SBG can supply stable voltage with switching the supply voltage of driving circuit, and it can substitude the small capacitance for the large capacitance. The charge pumping circuit of the SBG suffere no VT loss and is to be applicable to low-voltage DRAM's. Also it can reduce the power consumption to make VBB because of it's high pumping efficiency. Using biasing voltage with positive temperature coefficient, VBB level detecting circuit can detect constant value of VBB against temperature variation. VBB level during VBB maintaining period varies 0.19% and the power dissipation during this period is 0.16mw. Charge pumping circuit can make VBB level up to -1.47V using VCC-1.5V, and do charge pumping operation one and half faster than the conventional ones. The temperature dependency of the VBB level detecting circuit is 0.34%. Therefore the proposed SBG is expected to supply a stable VBB with less power consumption when it is used in low power DRAM's.

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Crystalline Phases and Dielectric Properties of Crystallized Glasses in the System (Ca, Sr, Ba) O-Al2O3-B2O3-SiO2-TiO2

  • Tuzuku, Koichiro;Kishi, Hiroshi;Taruta, Seiichi;Takusagawa, Nobuo
    • The Korean Journal of Ceramics
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    • 제5권2호
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    • pp.189-194
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    • 1999
  • Crystallization of glasses in the system (Ca, Sr, Ba)$O-Al_2O_3-B_2O_3-SiO_2-TiO_2$ and dielectric properties of crystallized glasses were investigated. As increasing B2O3 content and decreasing SiO2 content in the glass, the major crystalline phase changed from $(Sr, Ba)_2TiSi_2O_8$ to (Ca, Sr, Ba)TiO3, the dielectric constant of crystallized glasses increased and the Temperature Coefficient of Capacitance (TCC) changed to negative. The dielectric constant and TCC was estimated for (Sr, Ba)2TiSi2O8 phase as 18 and -440 $ppm/^{\circ}C$, respectively and for (Ca, Sr, Ba)TiO3 phase as 307 and -1900 $ppm/^{\circ}C$, respectively. The dielectric properties of (Ca, Sr, Ba)TiO3 phase (in this study) were similar to those of (Ca, Ba) TiO_3 solid-solution^12)$, but $(Sr, Ba)_2TiSi_2O_8$ phase (in this study) and $Sr_2TiSi_2O_\;8^4$ showed the different properties.

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Experimental Investigation of Laser Spot Welding of Ni and Au-Sn-Ni Alloy

  • Lee, Dongkyoung
    • Journal of Welding and Joining
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    • 제35권2호
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    • pp.1-5
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    • 2017
  • Many microelectronic devices are miniaturizing the capacitance density and the size of the capacitor. Along with this miniaturization of electronic circuits, tantalum (Ta) capacitors have been on the market due to its large demands worldwide and advantages such as high volumetric efficiency, low temperature coefficient of capacitance, high stability and reliability. During a tantalum capacitor manufacturing process, arc welding has been used to weld base frame and sub frame. This arc welding may have limitations since the downsizing of the weldment depends on the size of welding electrode and the contact time may prevent from improving productivity. Therefore, to solve these problems, this study applies laser spot welding to weld nickel (Ni) and Au-Sn-Ni alloy using CW IR fiber laser with lap joint geometry. All laser parameters are fixed and the only control variable is laser irradiance time. Four different shapes, such as no melting upper workpiece, asymmetric spherical-shaped weldment, symmetric weldment, and, excessive weldment, are observed. This shape may be due to different temperature distribution and flow pattern during the laser spot cutting.

$ZrO_2$가 적용된 MIM Capacitor의 신뢰성 분석

  • 이소영;조성원;권혁민;한인식;박영석;박상욱;이희덕
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.73-73
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    • 2009
  • In this paper, electrical properties in $ZrO_2$-based high-k metal MIM capacitors were studied. Linear voltage coefficient of capacitance (VCC) was 72.375 ppm/V, quadratic VCC was $174.581ppm/V^2$, temperature coefficients of capacitance was $111.01ppm/^{\circ}C$ at 100kHz and $89.497ppm/^{\circ}C$ at 1MHz, which indicate the temperature dependence of electrical parameter for MIM capacitors.

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유전체 Paste를 이용한 LTCC 내장형 후막 Capacitor 제작 및 평가 (Characterization of Embedded Thick Film Capacitor in LTCC Substrate)

  • 조현민;유명재;박성대;이우성;강남기
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.760-763
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    • 2003
  • Low Temperature Cofired Ceramics (LTCC) technology is a promising technology to integrate many devices in a module by embedding passive components. For the module substrate, most LTCC structures have dielectric constants below 10 to reduce signal delay time. Some components, which need high dielectric constants, have not been yet embedded in LTCC module. So, embedding capacitor with high capacitance by applying another dielectrics with high dielectric constants in LTCC is an important issue to maximize circuit density in LTCC module. In this study, electrical properties of embedded capacitor fabricated by dielectric paste of high dielectric constants (K-100) and co-firing behavior with LTCC were investigated. To prevent camber development of co-fired structure, constrained sintering process was tested. Dielectric properties of embedded capacitors were calculated from their capacitance and impedance value. Temperature coefficient of capacitance were also measured.

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$SrTiO_3$계 Grain Boundary Layer Capacitor에서 2차 열처리 산화물의 Frit화가 유전적 성질에 미치는 영향 (Effect of the Frit of the 2nd Firing Oxide in $SrTiO_3$-Based GBLC on the Dielectric Properties)

  • 유재근;최성철;이응상
    • 한국세라믹학회지
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    • 제28권4호
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    • pp.261-268
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    • 1991
  • The dielectric properties and microstructure of SrTiO3-based grain boundary layer (GBL) capacitor were investigated, and SrTiO3 GBL capacitor was made by penetrating the Frit (PbO-Bi2O3-B2O3 system). The Nb2O5-doped SrTiO3 ceramics were fired for 4-hours, at 145$0^{\circ}C$ in H2-N2 atomsphere to get semiconductive ceramics. The grain size of SrTiO3 sintered at reduction atmosphere had increased as the amount of Nb2O5 increases and then decreased as the amount of Nb2O5 exceeded 0.2 mole%. Insulating reagents which contained PbO-Bi2O3-B2O3 system frit and oxide mixture were printed on the each semiconductive ceramics and fired at varying temperature and for different holding time. The optimum dielectric properties could be obtained by second heat treatment at 110$0^{\circ}C$ for 1 hour, when frit paste was printed. A SrTiO3-based GBLC had the apparent permitivity of about 3.2$\times$104, the dielectric loss of 0.01~0.02 and the stable temperature coefficient of capacitance. The influence of frit paste on dielectric properties was similiar to that of oxide paste but the stability of temperature property of capacitance was improved.

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Electrical properties of (Na0.5Bi0.5)(Zr0.75Ti0.25)O3 ceramic

  • Lily, Lily;Yadav, K.L.;Prasad, K.
    • Advances in materials Research
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    • 제2권1호
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    • pp.1-13
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    • 2013
  • Lead-free compound $(Na_{0.5}Bi_{0.5})(Zr_{0.75}Ti_{0.25})O_3$ was prepared using conventional ceramic technique at $1070^{\circ}C$/4h in air atmosphere. X-ray diffraction analysis showed the formation of single-phase orthorhombic structure. Permittivity data showed low temperature coefficient of capacitance ($T_{CC}{\approx}5%$) up to $100^{\circ}C$. Complex impedance studies indicated the presence of grain boundary effect, non-Debye type dielectric relaxation and evidences of a negative temperature coefficient of resistance. The ac conductivity data were used to evaluate the density of states at Fermi level and apparent activation energy of the compound.

윤활유의 유동특성이 기관 저어널 베어링의 유막두께에 미치는 영향 (The Effect of Oil Rheology on Film Thickness in Engine Journal Bearing)

  • 이동호;장병주
    • 한국자동차공학회논문집
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    • 제2권4호
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    • pp.9-17
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    • 1994
  • Effect of Newtonian and non-Newtonian oils on minimum ol film thickness in engine journal bearing were investigated at various oil viscosities. The influence of oil viscosity and engine operating conditions on minimum oil film thickness of main bearing and con-rod bearing was examined. Minimum oil film thickness for Newtonian oils increased uniformly with kinematic viscosity. But the correlation between kinematic viscosity and minimum oil film thickness was very poor for non-Newtonian oils. According to the straight-line regression analysis for non-Newtonian oils, high temperature high shear viscosity at 1 $1{\times}10^6Sec^{-1}$, $150^{\circ}C$ increase the coefficient of determination from 0.41 to 0.77. Con-rod bearing showed better correlation between minimum oil film thickness and engine operating conditions than main bearing.

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반응표면분석법에 의한 적층 칩 바리스터의 전기적 특성 (Electrical Properties of Multilayer Chip Varistors in the Response Surface Analysis)

  • 윤중락;정태석;최근묵;이석원
    • 한국전기전자재료학회논문지
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    • 제20권6호
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    • pp.496-501
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    • 2007
  • In order to enhance sintering characteristics on the $ZnO-Pr_6O_{11}$ based multilayer chip varistors (MLVs), a response surface analysis using central composite design method were carried out. As a result, varistor voltage($V_{1mA}$), nonlinear coefficient ($\alpha$), leakage current ($I_L$) and capacitance (C) were considered to be mainly affected by sintered temperature and holding time. MLVs sintered at $1200^{\circ}C$ and above $1200^{\circ}C$ revealed poor electrical characteristics, possibly due to the reaction between electrode materials(Pd) and $ZnO-Pr_6O_{11}$ based ceramics. On the sintering temperature range $1150{\sim}1175^{\circ}C$, nonlinear coefficient ($\alpha$) and leakage current ($I_L$) were shown to be $60{\sim}69$ and below $0.3{\mu}A$, respectively. In particular, MLVs sintered at $1175^{\circ}C$, 1.5 hr and $2^{\circ}C/hr$ (cooling speed) showed stable ESD(Electrical Static Discharge) characteristics under the condition of 10 times at 8 Kv with deviation varistor voltage, and deviation nonlinear coefficient were 0.3% and 0.33% (at positive), 0.55% (at negative), respectively.