• Journal of the Korean Institute of Telematics and Electronics B
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• v.30B no.4
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• pp.21-26
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• 1993

Network systems are of fundamental importance in programmable device in industrial automation, as they essential in order to active group management of integration and coordination. In this papers,MMS implemented on the basis ISO specification for industrial environment. In the MMS-MAP, MMS is situated in the application layer and on the datalink layer. This implemented software was operated with network interface unit which was designed in group objects and service primitives for group management network model system. This function of designed module showed possibility of operation through group state diagram transition in the Mini-MAP environment.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.28-35
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• 1993

The MESFET can be used as a three-terminal varactor by employing gate depletion capacitance Cg. In this paper, a novel VCDRO(voltage controlled dielecric resonator oscillator) is designed to apply VCDRO with this concept. The VCDRO produced 6.33dBm output power at a frequency of 11.058GHz and tunning bandwidth of 45MHz. The advantage of using the MESFET as a three-terminal varactor is to let the MESFET play both roles at the same time, thus simplifying the circuit configuration and fabrication. This finding demonstrates the potential of using both real and imaginary parts of the equivalent impedance of the active device.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.5
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• pp.786-793
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• 1987

This paper describes the design and fabrication of the polysilicon selfaligned bipolar transistor with 1.6\ulcorner epitaxy and SWAMI isolation technologies. This transistor has two levels of polysilicon. Also emitter and adjacent edge of polysilicon base contact of this PSA device are defined by the same mask, and emitter feature size is 2x4 \ulcorner. DC characteristic of the fabricated transistor was evaluated and analyzed for the SPICE input parameters. The minimum propagation delay time per gate of 330 ps at 1mW was obtained with 41 stage CML ring oscillator.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.3
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• pp.59-65
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• 1992

In this paper, the Numerov method is applied to solve the Schroedinger equation for $Al_{0.3}Ga_{0.7}AS/GaAs/Al_{0.3}Ga_{0.7}As$ double-heterojunction HEMT structures. The 3 subband energy levels, corresponding wave functions, 2-dimensional electron gas density, and conduction band edge profile are calculated from a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. In addition, 2-dimensional electron gas densities in a quantum well of double heterostructure are calculated as a function of applied gate voltage. The density in the double heterojunction quantum well is increased to about more than 90%, however, the transconductance of the double heterostructure HEMT is not improved compared to that of the single heterostructure HEMT. Thus, double-heterojunction structures are expected to be suitable to increase the current capability in a HEMT device or a power HEMT structure.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.7
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• pp.48-55
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• 1992

In this paper, fSDF/POF, BPOF spatial matched filters are designed and implemented by CGH. The correlation characteristics for the suggested filters are analyzed for the distorted input images. Input patterns are obtained from the out-of-plane aircraft images by gradually rotating it, and then used for SDF training images. Modified version of LCD is used for a real-time input device of an optical correlator, and CGH-based fSDF filters are fabricated on film mask for spatial matched filter in order to recognize the distorted images. Total optical corrlator system size is effectively reduced to 148.8 cm by using lens combinations. Computer simulations and experimental results show that the suggested phase filters have nearly uniform correlation characteristics and have good classification capabilities between two classes.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.92-98
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• 1998

In this paper, we implemented an angularly multiplexed volume holographic memory system using an AOD that is controlled electronically, with rapid access time(10$mutextrm{s}$) and accurate repeatability of the reference beam. First we designed an AOD-based angular multiplexing system without the frequency compensation of the object beam, and magnified the deflection angle of AOD through the combination of lens so that we increased the storage capacity up to six times. Finally fifty-one images were stored experimentally in a photorefractive material of 1㎤ Fe:LiNbO$_3$.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.41-47
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• 1998

We propose a new high speed and low power SOI inverter with dynamic threshold voltage that can operate with efficient body-bias control and free supply voltage. The performance of the proposed circuit is evaluated by both the BSIM3SOI circuit simulator and the ATLAS device simulator, and then compared with other reported SOI circuits. The proposed circuit is shown to have excellent characteristics. At the supply voltage of 1.5V, the proposed circuit operates 27% faster than the conventional SOI circuit with the same power dissipation.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.34-45
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• 1994

We studied threshold voltages and I-V characteristics. considering short channel effect of the fully depleted thin film n-channel SOI MOSFET. We presented a charge sharing model when the back surface of short channel shows accumulation depletion and inversion state respectively. A degree of charge sharing can be compared according to each of back-surface conditions. Mobility is not assumed as constant and besides bulk mobility both the mobility defined by acoustic phonon scattering and the mobility by surface roughness scattering are taken into consideration. I-V characteristics is then implemented by the mobility including vertical and parallel electric field. kThe validity of the model is proved with the 2-dimensional device simulation (MEDICI) and experimental results. The threshold voltage and charge sharing region controlled by source or drain reduced with increasing back gate voltage. The mobility is dependent upon scattering effect and electric field. so it has a strong influence on I-V characteristics.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.62-71
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• 1994

A novel semiconductor device is proposed to be used as a processing element for the implementation of pulse-mode neural networks which consists of alternating n' GaAs quantum wells and undoped AlGaAs barriers sandwitched between n' GaAs cathode and P' GaAs anode and in simple circuit in conjunction with a parallel capacitive and resistive load the trigger circuit generates neuron-like pulse train output mimicking the function of axon hillock of biological neuron. It showed the sigmoidal relationship between the frequency of the pulse-train and the applied input DC voltage. In conjunction with MQWIMD the various neural circuits are proposed especially a neural chip monolithically integrated with photodetectors in order to perfrom the pattern recognition.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.72-79
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• 1994

In this paper semi empirical models are presented for the hot electron induced threshold voltage shift(${\Delta}V_{t}$) and effective channel shortening length (${\Delta}L_{H}$) in degraded PMOSFET. Trapped electron charges in gate oxide are calculated from the well known gate current model and ΔLS1HT is calculated by using trapped electron charges. (${\Delta}L_{H}$) is a function of gate stress voltage such as threshold voltage shift and degradation of drain current. From the correlation between (${\Delta}L_{H}$) has a logarithmic function of stress time. From the measured results, (${\Delta}V_{t}$) and (${\Delta}L_{H}$) are function of initial gate current and device channel length.