• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.277-280
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• 2005

In this paper, we propose a frequency synthesizer for dualband repeater. The dual-band RF technology for applications to the wireless repeater for CDMA and WCDMA mobile communications has been developed in this paper. The dualband PLL module consisted of dual-band VCO and one PLL IC has been developed. The main technological efforts for the dual-band PLL module is to suppress the intermodulation distortion by applying the miniature ceramic filter using the slow wave characteristics. The dual-band miniature RF module including dual-band PLL module and one MCU controller is very attractive for applications to the miniature dual-band RF mobile repeaters.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2004.07a
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• pp.82-82
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• 2004

• Proceedings of the IEEK Conference
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• 2004.06a
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• pp.249-252
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• 2004

Recently, wireless repeater with interference rejection has been considered for the next generation repeater. In this paper, adaptive interference rejection module suppressing interference in the 3G band is proposed. A novel adaptive rejection scheme is proposed and it is partially implemented by FPGA devices.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.8 no.1
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• pp.18-23
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• 2009

The conventional channel selection method for a ZigBee communication network basically detects the energy values in all channels. In the ISM band, no license is required to use channels in this band, so there may exist various interference factors in this band. It is well known that WLAN is the major interference factor degrading the performance of ZigBee in the ISM band. In this paper, we propose an efficient channel selection algorithm which uses the pattern of two types of WLAN channel uses as the a priori information of IEEE 802.11 band IEEE 802.11g. By using the proposed algorithm, we may save the time required to select channels for the ZigBee communications.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.63-64
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• 2006

In this paper, the open loop antenna using a strip-conductor for an RFID reader at dual-band frequency(910MHz, 2.45GHz) is proposed. The impedance is matched by varying the antenna parameters such as the length of strip-conductor and the gap of between two strip-conductors. Return loss and gain of designed antenna are -11.919dB, 2.5dBi at 910MHz, and -15.766dB, 5.65dBi at 2.45GHz, respectively.

• ETRI Journal
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• v.35 no.1
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• pp.150-153
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• 2013

In this letter, a compact and fully printed composite right- and left-handed (CRLH) dual-band power divider is proposed. The branches of the conventional Wilkinson power divider are replaced by subwavelength CRLH phase-shift lines having $+90^{\circ}$ for one frequency and $-90^{\circ}$ for another frequency for dual-band and miniaturization performance. Equations are derived for the even- and odd-mode analysis combined with the dual-band CRLH circuit. A PCS and a WLAN band are chosen as the test case and the circuit approach agrees with the CAD simulation and the measurement. Additionally, the CRLH property is shown with the dispersion diagram and the eightfold size reduction is noted.

• Proceedings of the Korea Society of Information Technology Applications Conference
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• 2005.11a
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• pp.191-194
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• 2005

In this paper the platform system for IEEE 802.15.4 Low Rate WPAN is designed and fabricated. IEEE 802.15.4 Low Rate WP AN system serves the functions and realization of home-area network. According to the IEEE 802.15.4 standard, there are two modes, One is BPSK modulation in 868/915MHz frequency band. The other is O-QPSK modulation in 2.45GHz frequency band. In this paper we implemented the platform system mounted in one PCB board in 868/915MHz frequency band of IEEE 802.15.4 Low Rate WPAN system. We measured that the platform system which consists of digital part and RF part has good performance. Also RF part is realized by design and fabrication of the RF transceiver IC. The key issue is to make the platform system which provides the function of Low Rate WPAN system to meet the requirement of IEEE 802.15.4 standards.

• Proceedings of the KSR Conference
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• 2008.06a
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• pp.305-310
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• 2008

Wireless telecommunication frequency band becomes wider with the development of modern telecommunication technology, and highly integrated semiconductors are applied more at high speed tain system. RFI susceptibilities of the integrated power semiconductors in high speed train system influence much on the system safety. RFI susceptibility standards and measurement methods in high speed train system at wireless telecommunication frequency band is surveyed in this research.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.133-134
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• 2006

In this paper the platform system for IEEE 802.15.4 Low Rate WPAN is designed and fabricated. IEEE 802.15.4 Low Rate WPAN system serves the functions and realization of home-area network. According to the IEEE 802.15.4 standard, there are two modes, One is BPSK modulation in 868/915MHz frequency band. The other is O-QPSK modulation in 2.45GHz frequency band. In this paper we implemented the platform system mounted in one PCB board in 868/915MHz frequency band of IEEE 802.15.4 Low Rate WPAN system. We measured that the platform system which consists of digital part and RF part has good performance. Also RF part is realized by design and fabrication of the RF transceiver IC. The key issue is to make the platform system which provides the function of Low Rate WPAN system to meet the requirement of IEEE 802.15.4 standards.

• Electronic Materials Letters
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• v.14 no.6
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• pp.733-738
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• 2018

Undoped and Mn-doped $In_2O_3$ films were prepared by radiofrequency magnetron sputtering technique. The effects of Mn doping on the structural and optical properties of as-prepared films were investigated using X-ray diffraction, X-ray photoelectron spectroscopy and ultraviolet-visible spectroscopy. Mn doping can enhance the intensity of (222) peak in Mn-doped $In_2O_3$ thin film, indicating Mn dopant promotes preferred orientation of crystal growth along (222) plane. XPS analyses revealed that the doped Mn ions exist at + 2 oxidation states, substituting for the $In^{3+}$ sites in the $In_2O_3$ lattice. UV-Vis measurements show that the optical band gap $E_g$ decreases from 3.33 to 2.87 eV with Mn doping in $In_2O_3$, implying an increasing sp-d exchange interaction in the film. Our work demonstrates a practical means to manipulate the band gap energy of $In_2O_3$ thin film via Mn impurity doping, and significantly improves the photoelectrochemical activity.