• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.7
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• pp.452-457
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• 2014

Copper manganite thin films were fabricated on $SiN_x/Si$ substrate by metal organic decomposition (MOD) process. They were burned-out at $400^{\circ}C$ and annealed at various temperatures ($400{\sim}800^{\circ}C$) for 1h in ambient atmosphere. Their micro-structure and negative temperature coefficient of resistance (NTCR) characteristics were analyzed for micro-bolometer application. The copper manganite film with a cubic spinel structure was well developed at $500^{\circ}C$ which confirmed by XRD and HRTEM analysis. It showed a low resistivity ($47.5{\Omega}{\cdot}cm$) at room temperature and high NTCR characteristics of $-4.12%/^{\circ}C$ and $-2.15%/^{\circ}C$ at room temperature and $85^{\circ}C$, implying a good thin film for micro-bolometer application. Furthermore, its crystallinity was enhanced with increasing temperature to $600^{\circ}C$. However, the appearance of secondary phase at temperatures higher than $600^{\circ}C$ lead to deteriorate the NTCR characteristics.

• Journal of the Korea Society of Computer and Information
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• v.22 no.10
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• pp.19-26
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• 2017

In this paper, we propose an efficient image equipment implementation for the detector characteristics of various detectors by analyzing un-cooled thermal detector that exhibits nonlinear changes due to external temperature effects. First, we explain Thermal Electric Cooler for un-cooled detector temperature control system and Non-image correction methode for IR system. Second, we present the results of a study on an efficient control technique that can minimize the deterioration of image quality by controlling a un-cooled thermal detector without a thermal electric cooler(TEC) inside. Third, we suggest Image Correction Methods for Uncooled IR TECless Detector with Non-linear characteristics due to Temperature Change. So, we analyze and present the results of Image correction methods for various un-cooled thermal detector.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.68-73
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• 2006

We propose a damascene gate FinFET with Si nanocrystals implemented on bulk silicon wafer for low voltage flash memory device. The use of optimized SRON (Silicon-Rich Oxynitride) process allows a high degree of control of the Si excess in the oxide. The FinFET with Si nanocrystals shows high program/erase (P/E) speed, large $V_{TH}$ shifts over 2.5V at 12V/$10{\mu}s$ for program and -12V/1ms for erase, good retention time, and acceptable endurance characteristics. Si nanocrystal memory with damascene gate FinFET is a solution of gate stack and voltage scaling for future generations of flash memory device. Index Terms-FinFET, Si-nanocrystal, SRON(Si-Rich Oxynitride), flash memory device.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1646-1649
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• 2007

RF plasma and aerosol nano process were developedfor a volume production of nanoscale phosphors. R, G, and B PDP phosphors were synthesized and the characteristics were optimized through the proprietary power treatments. PL intensities were confirmed to be enhanced up to 70% of that of present commercial phosphors.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1452-1454
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• 1997

Properties of flashover in polymer insulators are very important under pollution environments. It is necessary to analyse flashover characteristics whether insulators are still safe or not. A lot of precious information can be got out of polluted polymer insulators through leakage current measurement. The behavior of partial arc discharge leads to flashover directly. It is possible to measure partial arc discharge as leakage current pulses analysis. The shape of histogram reflects degree of pollution, wetting and voltage stress level. It can be expressed by Weibull distribution function.

• Proceedings of the KIEE Conference
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• 1997.07a
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• pp.89-93
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• 1997

Various types of nozzles and arcing contacts for EHV class GCB have been made to investigate the arc-resistant characteristics of them during short-circuit tests. The tested results are presented and analyzed to give useful information for GCB nozzle and contact manufacturers.

• Proceedings of the Korean Society of Applied Entomolohy Conference
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• 2002.11a
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• pp.59-59
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• 2002

• The Korean Journal of Mycology
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• v.51 no.3
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• pp.155-165
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• 2023

In this study, we isolated several fungal strains from filtered water and sediment collected from rivers and streams. The strains were identified by molecular phylogenetic analyses of rDNA sequences (internal transcribed spacer [ITS], large subunit of ribosomal DNA [LSU]). The morphological characteristics of the fungi were investigated using microscopy, and the culture characteristics of fungi grown on several media were examined. We identified four species previously unknown in South Korea, namely, Dissophora globulifera, Linnemannia exigua, Mortierella rishikesha and Umbelopsis autotrophica.

• Journal of the Korean Operations Research and Management Science Society
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• v.19 no.1
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• pp.123-144
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• 1994

This Study has empirically examined the relationship between the role of R & D project leaders and their team performance using data from 87 project teams in 6 R & d organizations. The results reveal that : 1) R & D project leaders play five different roles for performing their jobs-strategic plannar, team builder, gatekeeper, expert and champion : 2) all but the champion role of leaders are positively associated with project team performance unless they have too short team tenure to materialize their role efforts : 3) However, the relationship between the role of leaders and project team performance varies according to characteristics of their team and project tasks. More specifically, it becomes more important for leaders to focus on gatekeeping and championing roles as their team gats older. Team building role of leaders is more important for higher performance of relatively certain R & D projects, while for uncertain R & D projects gatekeeping role appears to be more important.

• Journal of Information Display
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• v.7 no.1
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• pp.25-29
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• 2006

By the voltage threshold (Vt) close-curve measurement method, the changes in the discharge characteristics such as a firing voltage and IR emission among the three electrodes were examined relative to the low or high panel temperature ranging from -10 to $80^{\circ}$. The variation in the panel temperature was found significantly influence the surface discharge between the MgO surfaces rather than the plate gap discharge between the MgO and phosphor layers. Based on this experimental observation, a modified reset waveform that alleviates the surface discharge during a ramp-up and -down period was deeloped. By adopting the proposed reset waveform, a stable address discharge could be obtained irrespective of the panel temperature variation.