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Modified Ramp-Reset Waveform Robust for Variable Panel Temperature and its Discharge Characteristics  

Jang, Soo-Kwang (School of Electrical Engineering and Computer Science Kyungpook)
Tae, Heung-Sik (School of Electrical Engineering and Computer Science Kyungpook)
Kim, Soon-Bae (This work was supported by R&D Team, PDP Division, Samsung SDI Co.)
Jung, Eun-Young (This work was supported by R&D Team, PDP Division, Samsung SDI Co.)
Suh, Kwang-Jong (This work was supported by R&D Team, PDP Division, Samsung SDI Co.)
Ahn, Jung-Chull (This work was supported by R&D Team, PDP Division, Samsung SDI Co.)
Heo, Eun-Gi (This work was supported by R&D Team, PDP Division, Samsung SDI Co.)
Lee, Byung-Hak (This work was supported by R&D Team, PDP Division, Samsung SDI Co.)
Lee, Kwang-Sik (This work was supported by R&D Team, PDP Division, Samsung SDI Co.)
Publication Information
Abstract
By the voltage threshold (Vt) close-curve measurement method, the changes in the discharge characteristics such as a firing voltage and IR emission among the three electrodes were examined relative to the low or high panel temperature ranging from -10 to $80^{\circ}$. The variation in the panel temperature was found significantly influence the surface discharge between the MgO surfaces rather than the plate gap discharge between the MgO and phosphor layers. Based on this experimental observation, a modified reset waveform that alleviates the surface discharge during a ramp-up and -down period was deeloped. By adopting the proposed reset waveform, a stable address discharge could be obtained irrespective of the panel temperature variation.
Keywords
panel temperature; Vt close-curve; reset waveform;
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