• 한국정보통신학회논문지
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• 제20권6호
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• pp.1154-1162
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• 2016

본 논문에서는 이진 가중치 전류 기법을 이용한 고속 디지털 LDO(Low Dropout) 레귤레이터를 제안했다. 기존의 디지털 LDO는 일정량의 전류를 한 단계씩 제어하기 때문에 응답하는데 오랜 시간이 걸리며, 링잉 문제가 발생하게 된다. 이중 가중치 전류 기법은 링잉 문제를 제거함으로써 출력전압이 빠르게 안정화되도록 한다. 출력전압이 목표 전압에 안정적으로 도달하면, 디지털 LDO의 동작을 멈추는 프리즈 모드를 추가했다. 제안된 고속 응답 디지털 LDO는 출력 전원 전압이 급격히 바뀌는 시스템에서 응답속도가 느린 DC-DC 변환기와 함께 사용되어 출력전압을 빠르게 변하도록 한다. 제안된 디지털 LDO는 기존의 양방향 시프트 레지스터보다 면적이 56% 감소했고, 리플전압이 87% 감소했다. 제안된 디지털 컨트롤러는 $0.18{\mu}F$ CMOS 공정으로 제작되었다. $1{\mu}F$의 출력 캐패시터에서 정착시간이 $3.1{\mu}F$이고, 리플전압은 6.2mV 였다.

• 한국기계가공학회지
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• 제18권5호
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• pp.1-8
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• 2019

Breath analysis using a portable device is better than the classical breath analysis system in terms of installation and operation. There is an increasing need to develop cost-effective equipment for testing gas sensors from the viewpoint of functionalities that can be applied applicable to portable devices. In the present study, an economical gas chamber for in-situ gas measurement is implemented with a single gas chamber without using expensive gas storage and control equipment; the gas response characteristics are analyzed using the above-described chamber. The main features of the implemented gas chamber are simple injection procedure, improved gas diffusion, easy measurement and cleaning, support for low-power mode measurement function for portable devices, and open source platform. Moreover, an analysis of gas response characteristics based on changes in sensor voltage show that the sensitivity and 90% response time are affected by the sensor voltage. Furthermore, the sensitivity graph has an inflection point in a specific range. The gas sensor applied in this study showed fast response speed and high sensitivity for sensor voltages of 3.0-3.5 V, regardless of the concentration of acetone gas, the target gas used in this study.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• 대한전기학회논문지:전력기술부문A
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• 제51권2호
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• pp.69-75
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• 2002

AVR parameter tuning for voltage control of power system generators has generally been performed with the analytic methods and the simulation methods, which mostly depend on off-line linear mathematical models of excitation control system. However, due to the nonlinear nature of excitation control system, excitation control system performance of the tuned Parameters using the above conventional tuning methods may not be appropriate for some operating conditions. This paper presents an AVR parameter tuning method using actual on-line data of the excitation control system with the parameter optimization technique. As this method utilizes on-line operating data of the target excitation control system not the mathematical model of the system, it can overcome the limitation of model uncertainty Problems in conventional method, and it can tune the AVR parameter set which gives desired performance at the operating conditions. For the verification of proposed tuning method, two case studies with scaled excitation systems and the real-time power system simulator are presented.

• 전기전자학회논문지
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• 제14권2호
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• pp.1-8
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• 2010

본 논문에서는 대기전력을 줄일 수 있는 Green Mode Power IC 회로를 설계하였다. 이 회로는 switch mode power supply(SMPS)을 구동하기 위한 PWM 기능을 가지고 있으며, 불필요한 소비전력을 제거하기 위해 burst mode와 skip mode 구간을 만들고 대기전력을 낮출 수 있도록 외부의 Power MOSFET에 의해 제어된다. 제안한 회로는 KEC 30V-High Voltage 0.5um CMOS process를 이용하여 시뮬레이션 하였다. 회로 내부는 크게 voltage regulator 회로, voltage reference 회로, UVLO(Under Voltage Lock Out)회로, Ibias 회로, green 회로, PWM 회로, OSC 회로, protection회로, control 회로, Level shift&Driver 회로로 구성되어 있다. 시뮬레이션 결과로부터 회로 동작 시 각 블록의 소비전류를 측정하여 확인한 결과 블록 별 전류총합이 1.29mA이었고, 이 값은 목표 설계치인 1.3mA을 충족시킴을 입증하였다. 이 값은 기존 IC의 소비전류보다 1/2이상 줄어든 값이며, 대기모드로 동작할 경우는 전력소비를 1W 미만까지 줄일 수 있었다.

• Smart Structures and Systems
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• 제20권1호
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• pp.1-10
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• 2017

Ionic Polymer Metal Composite (IPMC) is an electroactive polymer (EAP) and a promising candidate actuator for various potential applications mainly due to its flexible, low voltage/power requirements, small and compact design, and lack of moving parts. Although widely used in industry, this material requires accurate numerical models and knowledge of optimal control methods. This paper presents State-Dependent Riccati Equation (SDRE) approach as one of rapidly emerging methodologies for designing nonlinear controllers. Additionally, the present paper describes a novel method of Multi HGO Observer design. In the proposed design, the calculated position of the IPMC strip accurately tracks the target position, which is illustrated by the experiments. Numerical results and comparison with experimental data are presented and the effectiveness of the proposed control strategy is verified in experiments.

• 한국정밀공학회지
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• 제23권6호
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• pp.64-71
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• 2006

A target of this paper is to study on the usefulness of the adaptive piezoelectric energy harvesting device as a wireless electrical power supply when it is driven by mechanical vibrations of low frequency. For this purpose, an adaptive control technique and a step-down converter are used. A THUNDER series a piezoelectric material (TH7-R), which has been developed by a NASA engineer is selected for this study. In order to provide a mechanical energy to the piezoelectric material, a mechanical motion vibrator is designed. The adaptive controller is implemented using a dSPACE DS1104 controller board. The do-dc converter with an adaptive control technique harvests energy at over five times the rate of direct charging without a converter.

• 전기학회논문지
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• 제59권7호
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• pp.1206-1213
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• 2010

The case that HVDC system is connected to the strong AC network has little the considering problems. However, because there are many problems(example for voltage stability, inertia and low frequency resonance) in case of connecting the weak AC system, a detailed attentions are needed. In particular, because HVDC system can control the flow of AC network freely, have to contain the range of stability and safe operation range. This paper deals with HVDC control algorithms, which are operated within 1 second on viewpoint of time domain, that is, transient stability. The target of HVDC introduced in this paper is Jindo-Cheju HVDC system, which will be operated at 2011. And the introduced algorithm can be actually implemented to Jindo-Cheju HVDC system.

• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.94-97
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• 2017

Amorphous Si has been used for data processing circuits in flat panel displays. However, low mobility of the amorphous Si is a limiting factor for the data transmission speed. Metal oxides such as ZnO have been studied to replace the amorphous Si. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. When ZnO is grown by sputtering with $O_2$ as an oxidizer, there can be many ion species arising from $O_2$ decomposition. $O^+$, $O_2{^+}$, and $O^-$ ions are expected to be the most abundant species, and it is not clear which one contributes to the ZnO growth. We applied alternating substrate voltage (0 V and -70 V) during sputtering growth. We studied changes in transistor characteristics induced by the voltage switching. We also compared ZnO grown by dc and rf sputtering. ZnO film was grown at $450^{\circ}C$ substrate temperature. ZnO thin-film transistor grown with these methods showed $7.5cm^2/Vsec$ mobility, $10^6$ on-off ratio, and -2 V threshold voltage.

• 생태와환경
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• 제54권4호
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• pp.272-279
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• 2021

필터의 손상 없이 포집할 수 있는 필터케이스를 적용하고, 전압 제어와 압력 제어를 각각 할 수 있는 펌프 방식의 eDNA 포집 및 채수 시스템을 개발하여 집수매거 취수원을 대상으로 종래의 진공압 방식의 포집 및 추출 실험과 eDNA 농도를 비교함으로써 개발 시스템의 필터링 성능을 평가하였다. 개발된 시스템은 전압제어(Manual pump system) 방식과 압력제어(Automatic pump system) 방식으로 구분하여 필터링 시 필터기 내부 압력을 측정하고 각 시스템의 압력 변화를 비교하였다. 전압제어 방식은 필터링 초기에 65 [KPa]로 시작하여 필터링 시간이 경과함에 따라 필터에 축적되는 여과물의 양이 증가하므로 압력이 점진적으로 증가하였다. 압력제어 방식은 설계된 알고리즘에 따라 일정 압력을 유지하도록 제어한 결과, 압력 센서의 피드백 시간에 따라 필터링 과정에서 압력 변동의 폭은 차이가 있으나 목표 압력에 수렴하는 것을 확인하였다. 개발된 시스템의 필터링 성능을 확인하기 위해 eDNA 농도를 측정하고 전압제어 방식과 압력제어 방식을 대조군과 비교하였다. 전압제어 방식은 대조군과 유사한 결과를 얻을 수 있었으나 압력제어 방식은 대조군에 비해 낮게 나타났다. 압력제어 방식의 경우 필터링 시 압력 편차가 크고, 필터링 과정에서 일정한 압력을 유지하기 때문에 나타난 결과로 사료된다. 따라서 필터링 시에는 일정한 압력을 유지하는 것보다 필터링 시간 경과와 함께 여과물의 증가에 따라 압력이 점진적으로 증가하는 전압제어 방식이 eDNA를 포집하는데 적합함을 확인하였다. 정수역과 유수역의 eDNA 평균농도를 대조군으로 비교한 결과, 각각 96.2 [ng µL^-1], 88.4 [ng µL^-1]로 나타났으며, 펌프 방식으로 eDNA 평균농도를 비교한 결과는 각각 90.7 [ng µL^-1], 74.8 [ng µL^-1]로 정수역에서 필터링한 시료에서 높게 나타났다. 정수역에서 eDNA 농도가 높게 나타난 것은 잔존하는 eDNA를 비롯한 미세 유기물의 영향으로 사료된다.