• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.1-4
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• 2019

Reactive sputtering is widely used because of its high deposition rate and high step coverage. The deposition layer is often affected by target poisoning because the target conditions are changed, as well, by reactive gases during the initial stage of sputtering process. The reactive gas affects the deposition rate and process stability (target poisoning), and it also leads unintended oxide interlayer formation. Although the target poisoning mechanism has been well known, little attention has been paid on understanding the interlayer formation during the reactive sputtering. In this research, we studied the interlayer formation during the reactive sputtering. A DC magnetron sputtering process is carried out to deposit an aluminum oxide film on a silicon wafer. From the real-time process monitoring and material analysis, the target poisoning phenomena changes the reactive gas balance at the initial stage, and affects the interlayer formation during the reactive sputtering process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.120-120
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• 2009

Ga doped ZnO (GZO) transparent conductive films were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of GZO($Ga_2O_3$ 3.w.t%) and Zn metal. The GZO thin films were deposited as a various $PO_2$ (oxygen gas content). Base pressure was $2{\times}10^{-6}torr$, and a working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe (Chang-min), a Hall Effect measurement (Ecopia) and an UV/VIS spectrometer (HP). The minimum resistivity of film was $6.5{\times}10^{-4}[{\Omega}-cm]$ and the average transmittance of over 80% was seen in the visible range

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.167-171
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• 1995

The orientation dependence of sputtering rate in the sendust polysrystalline targets was studied, It was fount from the present work that the erosion process is not uniform from one grain to another even within a target because of its polysrystalline nature showing many different orientation of grains. The grains oriented to promote efficient erosion were characterized by the close-packed planes which have large interplanar spacing and strong binding energy, The characteristic line patterns appeared on as-sputter target surface are discussed in terms of symmetry of crystllographic planes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.768-771
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• 2001

Non-contacting capacitive sensor, based on principle of the cross capacitor, for measuring of $\mu\textrm{m}$-order displacements have been fabricated and characterized. To overcome disadvantages of the existed capacitive sensors of parallel type with 2-electrodes and 3-electrodes, the developed new sensor was designed to have 4-electrodes, two of them used high and low electrode the other two used as guard electrodes, on a sapphire plate with diameter 17 mm and thickness 0.7 mm, and are symmetrically situated with a constant gap of 0.2 mm between the electrodes. This sensor can be used for measuring the distance between sensor and target not only the metallic but also non-metallic target without ground connection.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.880-883
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• 2003

ZnO thin films for Film Bulk Acoustic Resonator(FBAR) were prepared by FTS (Facing Target Sputtering) system. The FTS methode enable to generate high density plasma, and it has a high deposition rate at 1mTorr pressure. Therefore, the ZnO thin films were deposited on $AZO/SiO_2/Si$ substrates with oxygen gas flow rate, and the other sputtering conditions were fixed such as a sputtering current of 0.8A, a substrate temperature at room temperature. AZO bottom electrode were deposited on $SiO_2/Si$ substrate and by Zn:Al(Al:2wt%) metal target. ZnO thin film thickness and the c-axis preferred orientation of ZnO thin film were evaluated by ${\alpha}-step$ and XRD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.98-101
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• 2004

AZO(ZnO:Al) thin film were prepared by FTS(Facing Target Sputtering) system. Change the sputtering conditions, AZO thin film deposited the lower resistivity(<$10-4{\Omega}cm$) so it can use to be a display application electrode. In this study, the electrical and crystallographic effects of target type have been investigated. The crystal structure was studied by XRD and the resistivity of AZO thin film was obtained by the four-point probe.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.5
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• pp.1679-1688
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• 1996

Laser flash technique was applied to measure thermal properties of FGM made by a CVD method. System stability and reproducibility of this measuring system were proved and calibrated with glassy carbon used as reference material. Specimens was prepared by cutting FGM diagonally. Measurements were performed for a wide range of temperatures up to 1500K. Relative heat capacity of the FGM specimen was scattered with in $\pm$13% at room temperature and at high temperature above 1200K, and $\pm$3% at medium temperature range. On the other hand, thermal diffusivity data showed excellent reproducibility and stability through the whole temperature range. In conclusion, the multi-target radiometer can be applied to measure the thermal properties of non homogeneous materials like FGM.

• 제어로봇시스템학회:학술대회논문집
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• 1990.10a
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• pp.602-607
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• 1990

Spent nuclear fuel is very dangerous substance emitting strong ionizing radiation which is harmful to human body. The remote handling of spent nuclear fuel is essential because people cannot access this substance without protecting radiation. To handle highly radioactive material or nuclear waste, many kinds of teleoperators such as master slave manipulator, electro mechanical manipulator, servo manipulator, mobile robot was developed. The distance and dimension of target object cannot be measured easily when highly radioactive material is handled by teleoperator because one should use lead glass or TV camera and monitor to protect radiation and see target object. During experiments on the remote handling of spent nuclear fuel by electro mechanical manipulator, we often felt that a distance and dimension measurement system is necessary to handle the objects which is in the highly radioactive environment, so we developed a system which is appropriate for this purpose.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.208-211
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.398-401
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• 2001

Indium tin oxide films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of $T/R_{sh}$ and $T^{10}/R_{sh}$ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and $8.95({\times}10^{-3}\Omega^{-1})$ respectively.