• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.57-57
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• 2003

High dielectric constant materials (high K) have attracted a great deal of interest because of the dramatic scaling down of DRAM capacitor reaching its physical limit in terms of reduction of thickness. Among high-K materials that can replace silicon dioxide, tantalum pentoxide (Ta2O5) thin film, with their high dielectric constant (∼25) and good step coverage, is the candidate of choice.

• 자원리싸이클링
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• 제25권1호
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• pp.24-30
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• 2016

노트북 실장인쇄회로기판(Printed Circuit Board Assembly, PCBA)으로부터 탄탈럼을 회수하기 위한 선별실험을 실시하였다. 우선 노트북 실장인쇄회로기판에 실장된 전자부품(Electronic Components, ECs)을 자체개발한 실험장치를 이용하여 기판으로부터 분리하였다. 분리된 전자부품을 체분리하여 -6.35+2.80 mm구간에서 전체 탄탈럼 캐퍼시터의 약 93.2 wt.%를 회수할 수 있었다. 회수된 탄탈럼 캐퍼시터를 해머밀로 분쇄 후, 자력선별기를 통해 자력세기 300 가우스에서 분쇄물 중의 전극을 제거하였다. 전극이 제거된 자력선별 산물을 대상으로 넬슨 선별기(Knelson concentrator)를 이용한 선별 실험 결과 Bowl의 회전수 200 rpm, 유동층수 유량 7 L/min에서 76.9%의 최대 선별효율을 보였으며, 이때 품위 및 회수율은 각각 약 81.1%, 약 78.8%를 나타내었다.

• Korean Chemical Engineering Research
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• 제44권6호
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• pp.614-622
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• 2006

질산망간수용액의 열분해에 의한 이산화망간 적용 $Ta/Ta_2O_5/MnO_2$ 커패시터의 특성 연구를 수행하였다. 질산망간수용액의 TG/DSC 분석을 통해 약 $230{\sim}250^{\circ}C$ 범위에서 단일상의 이산화망간이 생성되었다. 열분해 온도, 질산망간수용액의 농도, 열분해 회수를 이산화망간 고체 전해질 생성의 기초 변수로 선정하고 이에 따른 커패시터 특성을 평가하였다. 최적 조성을 기준으로 복사열분해 방식이 대류열분해 방식에 비하여 우수한 특성을 발휘하였다. 이는 복사열분해에 의해 상대적으로 구형의 작은 입자 상태의 이산화망간 입자들이 생성되고 이를 통해 미세 다공성 구조의 커패시터 소결체 내부에 균일하고 치밀한 이산화망간 고체전해질 층이 생성되는 것에서 기인하는 결과임을 확인하였다.

• 한국표면공학회지
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• 제42권5호
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• pp.227-231
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• 2009

The niobium capacitor showed somewhat more unstable characteristics than the commercial tantalum capacitors, but is nonetheless considered applicable as a future substitute for tantalum capacitors. In this study, niobium powder was fabricated by metallothermic reduction process using $K_2NbF_7$ as the raw materials, KCl and KF as the diluents and Na as the reducing agent. The niobium particle size greatly decreased from 0.7um to 0.2 um as the amount of diluent increased. However if a higher surface area of powder is required, more diluents need to be used in the said method in order to produce niobium powder. The niobium powder morphology and particle size are very sensitive to a amount of sodium excess. The particle size of niobium powder increased with a increasing amount of sodium excess. When more diluent and sodium are used, the niobium powder will be contaminated with more impurities such as Fe, Cr, Ni so on.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1014-1017
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• 2001

In recent years, The tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, The effect of thermal annealing in the temperature range of 300∼700$^{\circ}C$ on the sheet resistor properties and microistructure of tantalum nitride(TaN) thin-film deposited by RF sputtering was studied. XRD(X-ray diffractometer) and AFM were used to observe electrical properties and microstructrue of the TaN film and sheet resistance. The TCR properties of the TaN films were discussed in terms of annealing temperature, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. The leakage current of the TaN thin film annealed 400 $^{\circ}C$ was stabilized in the study. How its was found that the sheet resistance in the polycrystalline TaN thin film decreased with increasing the annealing temperature above 600 $^{\circ}C$ after sudden peak upen 400 $^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1476-1478
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor, inductor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by TaN(tantalum nitride) on alumina substrate. The TCR properties of the TaN films were discussed in terms of crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's annealing temperature and ambient annealing condition. Respectively, at $300{\sim}400^{\circ}C$ on vacuum and nitrogen annealed thin film resistor having a goof thermal stability and lower TCR properties then as deposited thin films expected for the application to the dielectric material of passive component.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.157-159
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• 2005

MOS capacitors were fabricated to study electrical and chemical properties of Ta-Mo metal alloy with $ZrO_2$. The work function of Ta-Mo alloy were varied from 4.1eV to 5.1eV by controlling the composition. When the atomic composition of Mo is 10%, good thermal stability up to $800^{\circ}C$ was observed and work function of MOS capacitor was 4.1eV, compatible for NMOS application. But pure Ta exhibited very poor thermal stability. After $600^{\circ}C$ annealing, equivalent oxide thickness of tantalum gate MOS capacitor was continuously decreased. Barrier heights of Ta-Mo alloy and pure metal that supported the work function values were calculated from Fowler-Nordheim analysis. As a result of these electrical?experiments, Ta-Mo metal alloy with $ZrO_2$ is excellent gate electrode for NMOS.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.82-85
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1487-1489
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• 2001

The tantalum oxide($Ta_2O_5$) is an important material for present thin-film capacitor application owing to its high dielectric constant and thermal stability. We report dielectric property of Si(p type)/Pt/$Ta_2O_5$/Ag based MIM structure obtained by RF sputtering and annealed in vacuum environment. We have measured and researched the characteristics of C-F, C-V and EPMA. And we describe parameter dependence on sputtered condition and annealed temperature with dielectric property.

• 한국재료학회지
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• 제4권7호
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• pp.759-766
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• 1994

본 연구에서는 Ta 박막 밑에 $SnO_{2}$박막층을 입혀서 $Ta/SnO_2$이중박막이 산화될 때 산소의 공급원을 2원화 함으로써 $Ta_2O_5$의 stoichiomitry를 향상시켜 $Ta_2O_5$박막 커패시터의 주설전류를 줄이고자 하였다. Tantalum을 실리콘 웨이퍼 위에 기판온도를 변화시켜 가면서 전자빔증착이나 스퍼터링 방밥으로 입히고 $500^{\circ}C$~$900^{\circ}C$에서 산화시켜 Al/$Ta_2O_5$p-Si/Al또는Al/$Ta_2O_5$/p-Si/Al과 같은 MIS형 커패시터를 만들어 유전상수 및 누설전류를 측정하였으며 XRD, AES, ESCA등을 이용하여 박막의 결정성 및 특성을 분석하였다. $SnO_{2}$박막층을 입힌 커패시터는$SnO_{2}$층을 입히지 않은 커패시터보다 10배 이상 큰 200정도의 유전상수 값을 나타내었다. 그리고 산화온도가 높으면 박막의 결정화로 인하여 유전상수는 증가하지아는 누설전류도 약간 증가하는 것이 확인되었다. 또한 높은 증착온도는 일반적으로 누설전류를 낮추는 것으로 나타났다. 특히 $SnO_{2}$층을 입힌 경우에 기판온도를 $200^{\circ}C$로 하고 $800^{\circ}C$에서 산화시켜 만든 커패스터의 경우에 $4 \times 10^{5}$V/cm의 전장강도에서 $10^{-7}A/\textrm{cm}^2$의 낮은 누설전류 값을 나타내었다. $Ta_2O_5$박막은 $700^{\circ}C$ 이상에서 박막이 결정되고, Ta /$SnO_{2}$ 이중박막을 산화시키면 처음에는 Ta박막과 $SnO_{2}$박막 계면에서 $SnO_{2}$로부터 Ta박막에 산소가 공급되지마는 점차 Sn이 Ta박막쪽으로 확산되어 결국에는 Ta-Sn-O계의 새로운 ternary oxide가 생성되는 것으로 나타났다.