• Title/Summary/Keyword: TaN

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Intra- and inter-rater reliability of muscle thickness measurement of the tibialis anterior using different inward pressures

  • Lee, Seong-Joo;Lim, Ji Young;Lee, Chang-Hyung;Park, Dae-Sung
    • Physical Therapy Rehabilitation Science
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    • v.8 no.4
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    • pp.218-224
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    • 2019
  • Objective: This reliability study examined the effects of applying varying induced inward pressures using a transducer placed at 0° neutral ankle position (NEU) and 15° ankle dorsiflexion (DF) on tibialis anterior (TA) muscle thickness using a custom-made device with a force indicator during rehabilitative ultrasound imaging. Design: Cross-sectional study. Methods: Twenty-four healthy subjects were recruited in this study. Two examiners measured the muscle thickness of the TA at 0° NEU and 15° DF in 3 conditions of inward pressures (1.0 N, 2.0 N, and 4.0 N) using a custom-made holder. The muscle thickness was measured three times for each of the conditions arranged in random order. For intra- and inter-rater reliability, the intraclass correlation coefficients (ICCs) with 95% confidence intervals, standard error of measurement, minimal detectable change, and coefficient of variation were analyzed. One-way repeated measures analysis of variance was conducted for investigating changes of TA muscle thickness according to the inward pressures of the transducers. Results: The intra-rater reliability of TA muscle thickness measurement was excellent (ICC3,1: 0.92-0.96) for all conditions (at both ankle joint angles per varying inward pressure). Likewise, the inter-rater reliability of TA muscle thickness measurement was excellent (ICC2,1: 0.89-0.97) under same conditions. The mean of TA thickness showed the trend of decreasing significantly with increased inward pressures at all ankle joint angles (p<0.05). Conclusions: Use of this custom-made device with a force indicator is useful to accomplish the high intra- and inter-rater reliability of TA muscle thickness measurement at both ankle joint angles in reducing the measurement error.

Electrical and Chemical Properties of ultra thin RT-MOCVD Deposited Ti-doped $Ta_2O_5$

  • Lee, S. J.;H. F. Luan;A. Mao;T. S. Jeon;Lee, C. h.;Y. Senzaki;D. Roberts;D. L. Kwong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.4
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    • pp.202-208
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    • 2001
  • In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

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Multi-functional Heating Resistor Films for High Efficient Inkjet Printhead (고효율 잉크젯 프린터 헤드 제조를 위한 다기능성 전자저항막 소재)

  • Gwon, Se-Hun;Min, Jae-Sik;Jeong, Seong-Jun;Choi, Ji-Hwan;Kim, Kwang-Ho
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.10a
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    • pp.134-134
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    • 2009
  • 원자층 증착법을 이용하여 platinum group metal(Ru, Ir, Pt). metal nitride(TaN, TiN, AlN), 그리고 metal oxide($Al_2O_3$, $TiO_2$)을 증착하고, 미세구조와 공정 변수가 내산화성, 내부식성, 저항 및 온도저항계수에 미치는 영향을 연구하였다. proto-type의 전자저항막 제조를 통해 종래의 TaN 전자저항막에 비해 우수한 내부식성 및 내산화성을 가짐을 확인하였다.

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