• Title/Summary/Keyword: Ta-N

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Simplified Reaction Scheme of Hydrocarbon Fuels and Its Application to Autoignition of Gasoline with Different Octane Numbers (탄화수소계 연료의 축소반응모델과 가솔린연료의 옥탄가 변화에 따른 자발화 지연시간)

  • 여진구
    • Transactions of the Korean Society of Automotive Engineers
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    • v.11 no.3
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    • pp.13-19
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    • 2003
  • Mathematically simplified reaction scheme that simulates autoignitions of the end gases in spark ignition engines has been studied computationally. The five equation model is described, to predict the essential features of hydrocarbon oxidation. This scheme has been calibrated against autoignition delay times measured in rapid compression machines. The rate constants, activation temperatures, Ta, Arrhenius preexponential constants, A, and heats of reaction for stoichiometric n-heptane/air, iso-octane/air, and their mixtures have all been optimised. The optimisation has been guided by Morley's correlation of the ratio of chain branching to linear termination rates with octane number. Comparisons between computed and experimental autoignition delay times have validated the Present simplified reaction scheme and the influences of octane number upon autoignition delay times have been computationally investigated. It has been found that both cool flame and high temperature direct reactions can have an effect on autoignition delay times.

High Exchange Coupling Field and Thermal Stability of Antiferromagnetic Alloy NiMn Spin Valve Films

  • Lee, N. I.;J. H. Yi;Lee, G. Y.;Kim, M. Y.;J. R. Rhee;Lee, S. S.;D. G. Hwang;Park, C. M.
    • Journal of Magnetics
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    • v.5 no.2
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    • pp.50-54
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    • 2000
  • NiMn-pinned spin valve films consisting of a layered glass/NiFe/Co/Cu/Co/NiFe/NiMn/Ta stack were made by do magnetron sputtering. After deposition, the structure was annealed in a series of cycles each including three hours at $220^\circ C, 2\times10^{-6}$ Torr, in a field of 350 Oe, to create an ordered antiferromagnetic structure in the NiMn layer and produce a strong unidirectional pinning field in the pinned magnetic layer, Optimum spin valve properties were obtained after seven annealing cycles, or 21 hours at $220^\circ C$, and were : MR ratio 1%, exchange coupling field 620 Oe, and coercivity of pinned layer 250 Oe. The exchange coupling field remained constant up to an operating temperature of $175^\circ C$, and the blocking temperature was about $380^\circ C$.

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Effective structure of electron injection from ITO bottom cathode for inverted OLED

  • Chu, Ta-Ya;Chen, Szu-Yi;Chen, Jenn-Fang;Chen, Chin H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.972-974
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    • 2005
  • For display drivers employ typically a-Si n-channel field effect transistors, they require an inverted OLED structure with a cathode as the bottom contact. ITO is regarded as the bottom cathode and can be applied to large size AM-OLED and transparent inverted OLEDs. We report the effective structure to improve the efficiency of electron injection from ITO cathode to $Alq_3$. We report the effective structure to improve the efficiency of electron injection from ITO cathode to Alq3 and studied the current density-voltage characteristics of trilayer ($Alq_3-LiF-Al$), LiF and Mg inserted between ITO and $Alq_3$, respectively. We discovered that 1 nm Mg afforded the highest efficiency.

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The Fabrication of a Ceramic Pressure Sensor Using Tantalum Nitride Thin-Films (질화탄탈박막을 이용한 세라믹 압력센서의 제작)

  • 정수용;최성규;이종춘;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.181-184
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    • 2002
  • This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability The sensitivity is 1.097∼1.21 mV/V$.$kgf/$\textrm{cm}^2$ in the temperature range of 25∼200$^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

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Fabrication of 800MHz Duplexer Using SAW Filter (800MHz 대역 이동통신 단말기용 듀플렉서의 설계 및 분석)

  • 이택주;권희두;정덕진
    • Proceedings of the IEEK Conference
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    • 2001.06a
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    • pp.245-248
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    • 2001
  • In this paper, we have investigated the design technique and fabricated the surface acoustic wave (SAW) filter for duplexer, which consists of Tx. and Rx. filter, and antenna terminal. For Tx. and Rx. bandpass filters we used the one-port SAW resonators with n-section ladder structure. The structure is composed of couples of series-arm resonators and parallel-arm resonators. RF filter using ladder structure was designed and fabricated on 36$^{\circ}$Y-X LiTaO$_3$ substrates. Designed filters, insertion loss is less than 1.5dB, the bandwidth is more than 25MHz, rejection band level is less than -30dB and center frequency is 820MHz.

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Piezoelectric and Dielectric Characteristics of $NaKNbO_3$ ceramics according to the poling condition (분극조건에 따른 무연 $NaKNbO_3$ 세라믹스의 압전 및 유전 특성)

  • Lee, Sang-Ho;Yoo, Ju-Hyun;Lee, Kab-Soo
    • Proceedings of the KIEE Conference
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    • 2005.11a
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    • pp.157-159
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    • 2005
  • In this study, in order to develop Pb-free piezoelectric ceramics, $[Li_{0.04}(Na_{0.44}K_{0.52)-(Nb_{0.86}Ta_{0.10}Sb_{0.04})]O_3$ ceramics were fabricated by conventional mixed oxide method and their piezoelectric characteristics were investigated according to the poling condition. The transition temperature from orthorhombic phase to tetragonal phase observed at $93[^{\circ}C]$ and Curie temperature was $346[^{\circ}C]$. At $50[^{\circ}C]$ poling temperature, dielectric constant, electromecha nical coupling factor kp, piezoelectric $d_{33}$ const ant, coercive field Ec, remanant polarization Pr and mechanical quality factor Qm showed the optimum value of 737, 0.45, 209[pC/N], 1l.34[kV/cm], $7.14[{\mu}C/cm^2]$ and 205, respectively.

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Fabrication and Estimation of Single-Transistor-Cell-Type FeRAM (MFS-FET) Using SOI Substrate (SOI 기판을 이용한 1-트랜지스터 구조 강유전체 비휘발성 메모리(MFS-FET)의 제작 및 평가)

  • Kim, N.K.;Lee, S.J.;Choi, H.B.;Kim, C.J.
    • Proceedings of the KIEE Conference
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    • 1999.11d
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    • pp.921-923
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    • 1999
  • 비휘발성 메모리의 고집적화와 적응학습형 뉴럴 소자의 실현을 위하여 1-트랜지스터 구조 강유전체 비휘발성 메모리(MFS-FET)를 SOI 기판위에 제작하고 평가하였다. 먼저 SBT($Sr_{0.8}Bi_{2.2}Ta_{2}O_{9}$)를 직접 Si위에 증착하고 C-V를 측정하여 1V의 메모리 윈도우를 얻음으로써 비휘발성 메모리로써의 동작가능성을 확인하였다. 또한 다양하게 게이트의 W/L 비를 바꾸어서 MFS-FET를 제작하여 다양한 드레인 전압-드레인 전류 특성을 얻었고 실제로 쓰기와 읽기 동작을 수행하여 MFS-FET가 비휘발성 메모리로써 제대로 동작하고 있음을 확인하였다.

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Characterization of a Chalcosyltransferase (gerGTII) in Dihydrochalcomycin Biosynthesis

  • Pageni, Binod Babu;Oh, Tae-Jin;Thuy, Ta Thi Thu;Sohng, Jae Kyung
    • Molecules and Cells
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    • v.26 no.3
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    • pp.278-284
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    • 2008
  • An open reading frame, designated GerGTII and located downstream of the polyketide synthase genes, has been identified as a chalcosyltransferase by sequence analysis in the dihydrochalcomycin biosynthetic gene cluster of Streptomyces sp. KCTC 0041BP. The deduced product of gerGTII is similar to several glycosyltransferases, authentic and putative, and it displays a consensus sequence motif that appears to be characteristic of a sub-group of these enzymes. Specific disruption of gerGTII within the S. sp. KCTC 0041BP genome by insertional in-frame deletion method, resulted complete abolishment of dihydrochalcomycin and got the 20-O-mycinosyl-dihydrochalconolide as intermediate product in dihydrochalcomycin biosynthesis which was confirmed by electron spray ionization-mass spectrometry and liquid chromatography-mass spectrometry. Dihydrochalcomycin also was recovered after complementation of gerGTII.

The Fabrication of Ceramic Thin-Film Type Pressure Sensors for High-Temperature applications (고온용 세라믹 박막형 압력센서의 제작)

  • Kim, Jae-Min;Choi, Sung-Kyu;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.456-459
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    • 2002
  • This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097~1.21mV/$V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

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