• Food Science of Animal Resources
• /
• v.18 no.3
• /
• pp.203-208
• /
• 1998

The study was carried out to screen mutagenicity of smoking materials for the determination of optimum smoking temperature for meat products. Wood materials employed for smoking were oak and apple trees. Temperatures of the generator for manufacturing of smoke flavoring were set to 250$^{\circ}C$, 400$^{\circ}C$ and 500$^{\circ}C$, respectively. Mutagenic activities of smoke flavoring were assayed according to Ames test using Salmonella typhimurium TA98 and TA 100. In oak wood smoke flavoring, Salmonella typhimurium TA98 without S-9 mix showed strong mutagenic activities at the concentration of 6$\mu\textrm{g}$/plate(250$^{\circ}C$), 4$\mu\textrm{g}$/plate(400$^{circ}C$) and 6$\mu\textrm{g}$/plate(500$^{\circ}C$). Salmonella typhimurium TA100 with S-9 mix showed strong mutagenic activities at the concentration of 10$\mu\textrm{g}$/plate(250$^{\circ}C$), 20$\mu\textrm{g}$/plate(400$^{\circ}C$) and 10$\mu\textrm{g}$/plate(500$^{\circ}C$). Salmonella typhimurium TA98 with S-9 mix showed strong mutagenic activities at the concentration of 30$\mu\textrm{g}$/plate(250$^{\circ}C$), 40$\mu\textrm{g}$/plate(400$^{\circ}C$) and 20$\mu\textrm{g}$/plate(500$^{\circ}C$). Salmonella typhimurium TA100 with S-9 mix showed strong mutagenic activities at the concentration of 30$\mu\textrm{g}$/plate(250$^{\circ}C$), 50$\mu\textrm{g}$/plate(400$^{\circ}C$) and 20$\mu\textrm{g}$/plate(500$^{\circ}C$). Salmonella typhimurium TA100 without S-9 mix showed strong mutagenic activities at the concentration of 10$\mu\textrm{g}$/plate(250$^{\circ}C$), 20$\mu\textrm{g}$/plate(400$^{\circ}C$) and 20$\mu\textrm{g}$/plate(500$^{\circ}C$). Salmonella typhimurium TA98 with S-9 mix showed strong mutagenic activities at the concentration of 30$\mu\textrm{g}$/plate(250$^{\circ}C$), 40$\mu\textrm{g}$/plate(400$^{\circ}C$) and30$\mu\textrm{g}$/plate(500$^{\circ}C$). Salmonella typhimurium TA100 with S-9 mix showed strong mutagenic activities at the concentrations 30$\mu\textrm{g}$/plate(500$^{\circ}C$). Salmonella typhimurium TA100 with S-9 mix showed strong mutagenic activities at the concentration of 30$\mu\textrm{g}$/plate(250$^{\circ}C$), 20$\mu\textrm{g}$/plate(400$^{\circ}C$) and 30$\mu\textrm{g}$/plate(500$^{\circ}C$). From these results, it could be concluded that optimum smoking temperature for meat products should be set below 400$^{\circ}C$, that the compounds like benzo[a]pyrene etc. contain a variety of mutagenic potentials, which could be generated at the higher smoking temperature.

• Journal of the Korean institute of surface engineering
• /
• v.44 no.5
• /
• pp.213-219
• /
• 2011

Recently aspheric lenses are widely used for superpricision optical instruments, such as cellular phone camera modules, digital cameras and optical communication modules. The aspherical lenses are processed using mold core under high temperature compressive forming pressure. It is imperative to develop superhard protective films for the life extension of lens forming mold core. Especially ta-C films with higher $sp^3$ fractions receive attentions for the life extension of lens forming mold and, in turn, the cost reduction of lenses due to their suprior high temperature stability, high hardness and smooth surfaces. In this study ta-C films were processed on WC mold as a function of substrate bias voltage using FVA (Filtered Vacuum Arc) method. The processed films were characterized by Raman spectroscopy and nano-indentation to investigate bonding nature and hardness, respectively. The film with maximun 87% of $sp^3$ fraction was obtained at the substrate bias voltage of -60 V, which was closest to ta-C film. ta-C films showed better high temperature stability by sustaining relatively high fraction of $sp^3$ bonding even after 2,000 glass lens forming applications.

• Korean Journal of Materials Research
• /
• v.1 no.1
• /
• pp.17-22
• /
• 1991

Tantalum thin films were deposited by DC sputtering on heavily doped single Si substrates. These substrates were treated by means of a rapid thermal annealing (RTA) under Ar atmosphere for various temperatures($600-1100^{\circ}C$). The silicide formation and the impurities behavior in the substrate are studied by means of XRD, SEM, four-point probe, HP4145, and SIMS. The formation of $TaSi_2$ started at $800^{\circ}C$ for all kinds of impurities and the entire Tantalum thin metal films were transformed into $TaSi_2$ above $1000^{\circ}C$ Also the contact resistance for $TaSi_2/P^+$ region had a low value; $22{\Omega}$, at contact site of $0.9{\times}0.9(\mu\textrm{m^2}$), and implanted impurities were diffused out into the $TaSi_2$ for rapid thermal annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.1014-1017
• /
• 2001

In recent years, The tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, The effect of thermal annealing in the temperature range of 300∼700$^{\circ}C$ on the sheet resistor properties and microistructure of tantalum nitride(TaN) thin-film deposited by RF sputtering was studied. XRD(X-ray diffractometer) and AFM were used to observe electrical properties and microstructrue of the TaN film and sheet resistance. The TCR properties of the TaN films were discussed in terms of annealing temperature, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. The leakage current of the TaN thin film annealed 400 $^{\circ}C$ was stabilized in the study. How its was found that the sheet resistance in the polycrystalline TaN thin film decreased with increasing the annealing temperature above 600 $^{\circ}C$ after sudden peak upen 400 $^{\circ}C$.

• Journal of the Korean Chemical Society
• /
• v.35 no.6
• /
• pp.653-658
• /
• 1991

The structural variation process and relation of water of amorphous Ta-IPA bulk and thin film upon heat-treatment conditions of $25^{\circ}C$ and $340^{\circ}C$ have been studied by using the radial distribution functions$ (RDF_{obs})$ estimated from the X-ray diffraction intensities, TG-DTA and Infrared spectrophotometer. The expected Ta-IPA structure was determined by comparing the $ RDF_{obs}$ with that for $RDF_{calc}$. The structure of specimens prepared by sol-gel method is basically based on the L-$Ta_2O_5$ crystal. Thin film of samples are mainly composed of octahedral Ta$O_6$and have smaller cluster than bulk samples.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.2
• /
• pp.67-72
• /
• 2004

The microwave dielectric properties and microstructure of the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramic were, investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of $1350^{\circ}C$∼$1425^{\circ}C$. According to the XRD patterns, the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramics have the $Mg_4Ta_2O_{9}$ phase(hexagonal). The dielectric constant($\varepsilon$$_{\gamma}$) and density increased with sintering temperature and mole fraction of x. To improve the quality factor and the temperature coefficient of resonant frequency, TiO$_2$($\varepsilon_{r}$=100, $Q{\times}f_{r}$=40,000GHz, $\tau$$_{f}$=＋450 ppm/$^{\circ}C$) was added in $Mg_4Ta_2O_{9}$ ceramics. In the case of the $0.7Mg_4Ta_2O_{9}$-$0.3TiO_2$ and the $0.6Mg_4Ta_2O_{9}$-$0.4TiO_2$ceramics sintered at $1400^{\circ}C$ for 5hr., the microwave dielectric properties were $\varepsilon$$_{\gamma}$=11.72, $Q{\times}f_{r}$=126,419GHz, $\tau_{f}$=-31.82 ppm/$^{\circ}C$ and $\varepsilon_{r}$=12.19, $Q{\times}f_{r}$=109,411GHZ, $\tau$$_{f}$= -17.21 ppm/$^{\circ}C$, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.3
• /
• pp.556-560
• /
• 2007

In this study, both structural and microwave dielectric properties of the $Mg_5B_4O_{15}$ (B=Ta, Nb) cation-deficient perovskite ceramics with sintering temperature were investigated. All sample of the $Mg_5B_4O_{15}$ (B=Ta, Nb) ceramics were prepared by the conventional mixed oxide method and sintered at $1400^{\circ}C{\sim}1500^{\circ}C$. The bulk density and quality factor of the $Mg_5B_4O_{15}$ (B=Ta, Nb) ceramics were increased with increasing sinterning temperature in the range of $1400^{\circ}C{\sim}1450^{\circ}C$, but these were decreased the sintering temperature of above $1450^{\circ}C$. The dielectric constant of the $Mg_5Ta_4O_{15}$ ceramics was increased continuously with increasing sintering temperature. And the dielectric constant of the $Mg_5Nb_4O_{15}$ ceramics was increased in as the sintering temperature increasesfrom $1400^{\circ}C{\sim}1450^{\circ}C$ but was decreased at the temperatures above $1475^{\circ}C$. In the case of the $Mg_5Ta_4O_{15}\;and\;Mg_5Nb_4O_{15}$ ceramics sintered at $1450^{\circ}C$ for 5h, the dielectric constant, quality factor, and temperature coefficient of the resonant frequency (TCRF) were 8.2, 259,473 GHz, $-10.91ppm/^{\circ}C$ and 14, 37,350 GHz, $-52.3ppm/^{\circ}C$, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.57 no.7
• /
• pp.1208-1212
• /
• 2008

In this study, both structural and microwave dielectric properties of the $Ba_5B_4O_{15}$ (B=Ta, Nb) cation-deficient perovskite ceramics with sintering temperature were investigated. All samples of the $Ba_5B_4O_{15}$ (B=Ta, Nb) ceramics were prepared by the conventional mixed oxide method and sintered at $1325^{\circ}C{\sim}1575^{\circ}C$. The bulk density and dielectric constant of the $Ba_5Ta_4O_{15}$ ceramics were increased continuously with increasing of sintering temperature. The quality factor of the $Ba_5Ta_4O_{15}$ ceramics was increased in as the sintering temperature increases from $1375^{\circ}C{\sim}1475^{\circ}C$ but decreased at the temperatures above $1475^{\circ}C$. And the bulk density, dielectric constant and quality factor of the $Ba_5Nb_4O_{15}$ ceramics were increased in as the sintering temperature increases from $1325^{\circ}CP{\sim}1400^{\circ}C$ but decreased at the temperatures above $1400^{\circ}C$. In the case of the $Ba_5Ta_4O_{15}$ sintered at $1475^{\circ}C$ and $Ba_5Nb_4O_{15}$ ceramics sintered at $1400^{\circ}C$, the dielectric constant, quality factor, and temperature coefficient of the resonant frequency (TCRF) were 25.15, 53,105 GHz, -3.06 $ppm/^{\circ}C$ and 39.55, 28,052 GHz, +5.7 ppm/$^{\circ}C$, respectively.

• Biomedical Science Letters
• /
• v.29 no.3
• /
• pp.190-200
• /
• 2023

Skeletal muscle, essential for metabolism, thermoregulation, and immunity, undergoes myogenic differentiation that results in myotube formation. Trans-anethole (TA), the major constituent in essential oil produced by anise, star anise, and fennel, whose function in skeletal muscle has not yet been elucidated. Therefore, we investigated whether TA influenced muscle differentiation in mouse C2C12 myoblasts. Cells were induced to differentiate using a differentiation medium with or without TA (50 or 200 mg/mL) daily for 5 days. We measured myotube length and diameter after differentiation days 1, 3, and 5 and analyzed the expression of myogenic markers (myoblast determination protein 1, myogenin, myocyte enhancer factor 2, muscle creatine kinase, and myosin heavy chain) and atrophy-related genes (atrogin-1 and muscle ring finger-1 [MuRF-1]) using quantitative real-time PCR. Additionally, we observed the expression of total protein kinase B (Akt) and phosphorylated Akt (p-Akt) using western blotting. Our data showed that TA significantly induced the formation of smaller and thinner myotubes and reduced the myogenic factor expression. Furthermore, the atrogin-1 and MuRF-1 expression markedly increased by TA. Consistent with these findings, TA significantly decreased the expression of total Akt and p-Akt. Taken together, these results indicate that TA inhibits myogenic differentiation of C2C12 cells via reduction of both total Akt and p-Akt. Our findings may provide valuable insights into the impact of PAA on individuals at risk of muscle atrophy.

• Korean Journal of Materials Research
• /
• v.4 no.8
• /
• pp.855-860
• /
• 1994

Ta-silicide films in polycide structure were prepared by rapid thermal annealing of sputtered Ta film on poly-Si and doped poly-Si. Effects of phosphorus on Ta-silicide formation were investigated. Independent of the ion dose($1 \times 10^{13}\to 5 \times 10^{15}$/ions/$\textrm{cm}^2$), Ta-silicide phases were formed at $800^{\circ}C$ and stabilized above $1000^{\circ}C$. From the result of XRD at $800^{\circ}C$ and $900^{\circ}C$, however, it was indicated that the more the doping concentration the weaker the intensity of Ta-silicide phases. Furthermore, the observation of SEM revealed that the increase of the doping concentration retarded silicidation. As the temperature increased, the dopant effect was weakened gradually and almost disappeared at $1000^{\circ}C$. Therefore the variation of the ion dose from ($1 \times 10^{13}\to 5 \times 10^{15}$/ions/$\textrm{cm}^2$) did not greatly affect the formation of Ta-silicide at high temperatures but retarded slightly the silicidation at low temperatures.