• 제목/요약/키워드: TRISO coating

검색결과 28건 처리시간 0.045초

A STRESS ANALYSIS FOR A COATED FUEL PARTICLE OF A HTGR USING A FINITE ELEMENT METHOD

  • Kim, Young-Min;Cho, Moon-Sung
    • Nuclear Engineering and Technology
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    • 제41권8호
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    • pp.1087-1100
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    • 2009
  • A finite element method utilizing the Galerkin form of the weighted residuals procedure was developed to estimate the mechanical behavior for a coated fuel particle (CFP) of a high temperature gas-cooled reactor (HTGR). Through a weak formulation, finite element equations for multiple layers were set up to calculate the displacements and stresses in a CFP. The finite element method was applied to the stress analyses for three coating layers of a tri-isotropic coated fuel particle (TRISO) of a HTGR. The stresses calculated by the finite element method were in good agreement with those from a previously developed computer code and depicted the typical stress behavior of the coating layers very well. The newly developed finite element method performs a stress analysis for multiple bonded layers in a CFP by changing the material properties at any position in the layers during irradiation.

화학증착법에 의하여 제조된 탄화규소 코팅층의 기계적 특성 (Mechanical Properties of Chemical Vapor Deposited SiC Coating Layer)

  • 이현근;김종호;김도경
    • 한국세라믹학회지
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    • 제43권8호
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    • pp.492-497
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    • 2006
  • SiC coating has been introduced as protective layer in TRISO nuclear fuel particle of High Temperature Gas cooled Reactor (HTGR) due to excellent mechanical stability at high temperature. In order to inhibit the failure of the TRISO particles, it is important to evaluate the fracture strength of the SiC coating layer. ]n present work, thin silicon carbide coating was fabricated using chemical vapor deposition process with different microstructures and thicknesses. Processing condition and surface status of substrate.affect on the microstructure of SiC coating layer. Sphere indentation method on trilayer configuration was conducted to measure the fracture strength of the SiC film. The fracture strength of SiC film with different microstructure and thickness were characterized by trilayer strength measurement method nanoindentation technique was also used to characterize the elastic modulus and th ε hardness of the SiC film. Relationships between microstructure and mechanical properties of CVD SiC thin film were discussed.

모의 TRISO 핵연료입자 코팅층 두께 비파괴 측정을 위한 X-선 영상처리기술 개발 (Development of X-ray Image Processing Technology for Nondestructive Measurement of the Coating Thickness in the Simulated TRISO-coated Fuel Particle)

  • 김웅기;이영우;박지연;나성웅
    • 한국정보처리학회:학술대회논문집
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    • 한국정보처리학회 2006년도 춘계학술발표대회
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    • pp.669-672
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    • 2006
  • 고온가스냉각 원자로에서는 고온 안정성 및 핵분열생성물 차단 성능이 우수한 TRISO(tri-tsotropic) 핵연료를 사용하고 있다. TRISO 핵연료 입자는 직경이 약 1 mm인 구 형태로 입자의 중심에는 직경 $0.5{\mu}m$의 핵연료 커널(kernel)이 포함되며 커널 외곽을 코팅 층이 에워싸고 있다. 이 코팅 층은 완충(buffer) PyC(pyrolytic carbon) 층, 내부 PyC 층, SiC 층, 그리고 외부 PyC 층으로 구성되어 있다. 각 코팅 층의 두께는 수십${\sim}$${\mu}m$ 범위이며, 본 연구에서는 각 코팅 층의 두께를 비파괴적으로 측정하기 위하여 마이크로포커스 X-선 발생장치와 고해상도 X-선 평판(flat panel) 검출기로 구성된 정밀한 X-선 래디오그래피 장치를 구성하고, $UO_2$ 핵물질 대신에 $ZrO_2$를 커널로 사용한 모의 TRISO 핵연료 입자에 대한 래디오그래피 영상을 획득한 후 디지털 영상처리기술을 이용하여 코팅 층 사이의 경계선이 구분 가능하도록 영상을 개선하고 디지털 영상처리 알고리즘을 개발하여 코팅 층의 두께를 측정하였다.

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Filtered Backprojection에 의해 복원된 TRISO 핵연료입자 단층 영상을 이용한 코팅 두께 측정 시뮬레이션 (Simulation of the Coating Thickness Measurement in the TRISO-coated Fuel Particle Image Reconstruction by the Filtered Backprojection)

  • 김웅기;이영우;박지연;나성웅
    • 한국정보처리학회:학술대회논문집
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    • 한국정보처리학회 2005년도 추계학술발표대회 및 정기총회
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    • pp.713-716
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    • 2005
  • 차세대 원자로로 부각되고 있는 고온가스냉각 원자로에서는 고온 안정성 및 핵분열생성물 차단 성능이 우수한 TRISO(Tri-Isotropic) 핵연료를 사용하고 있다. TRISO 핵연료 입자는 직경이 약 1mm인 구 형태로 입자의 중심에는 직경 $0.35^{\sim}0.6\;{\mu}m$의 핵연료 입자가 포함되며 입자 외곽을 코팅 층이 에워 싸고 있다. 이 코팅층은 완충(buffer) PyC 층, 내부 PyC 층, 외부 PyC 층으로 구성되어 있다. 각 코팅 층의 두께를 수십$^{\sim}$${\mu}m$ 범위이며 사양으로 정해져 있어 핵연료 입자 제조 후 사양을 만족하는지를 검사해야 한다. 본 연구에서는 TRISO 핵연료 입자 정보를 컴퓨터로 생성하고 가상의 X-선 래디오그래피 방법을 이용하여 투시 영상을 구성한 후 Filtered Backprojection 기법을 이용하여 단면 영상을 재구성하고 이 단면 영상을 이용하여 코팅 층의 두께를 정밀하게 측정하기 위한 모의 실험을 수행하였다. 경계선이 불명확한 투시영상이 아닌 경계선이 명확한 재구성 단면 영상을 이용하여 코팅 층의 두께를 약 2.3% 이내의 오차율로 정밀하게 측정하였다.

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COMPARISON OF DIFFUSION COEFFICIENTS AND ACTIVATION ENERGIES FOR AG DIFFUSION IN SILICON CARBIDE

  • KIM, BONG GOO;YEO, SUNGHWAN;LEE, YOUNG WOO;CHO, MOON SUNG
    • Nuclear Engineering and Technology
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    • 제47권5호
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    • pp.608-616
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    • 2015
  • The migration of silver (Ag) in silicon carbide (SiC) and $^{110m}Ag$ through SiC of irradiated tristructural isotropic (TRISO) fuel has been studied for the past three to four decades. However, there is no satisfactory explanation for the transport mechanism of Ag in SiC. In this work, the diffusion coefficients of Ag measured and/or estimated in previous studies were reviewed, and then pre-exponential factors and activation energies from the previous experiments were evaluated using Arrhenius equation. The activation energy is $247.4kJ{\cdot}mol^{-1}$ from Ag paste experiments between two SiC layers produced using fluidized-bed chemical vapor deposition (FBCVD), $125.3kJ{\cdot}mol^{-1}$ from integral release experiments (annealing of irradiated TRISO fuel), $121.8kJ{\cdot}mol^{-1}$ from fractional Ag release during irradiation of TRISO fuel in high flux reactor (HFR), and $274.8kJ{\cdot}mol^{-1}$ from Ag ion implantation experiments, respectively. The activation energy from ion implantation experiments is greater than that from Ag paste, fractional release and integral release, and the activation energy from Ag paste experiments is approximately two times greater than that from integral release experiments and fractional Ag release during the irradiation of TRISO fuel in HFR. The pre-exponential factors are also very different depending on the experimental methods and estimation. From a comparison of the pre-exponential factors and activation energies, it can be analogized that the diffusion mechanism of Ag using ion implantation experiment is different from other experiments, such as a Ag paste experiment, integral release experiments, and heating experiments after irradiating TRISO fuel in HFR. However, the results of this work do not support the long held assumption that Ag release from FBCVD-SiC, used for the coating layer in TRISO fuel, is dominated by grain boundary diffusion. In order to understand in detail the transport mechanism of Ag through the coating layer, FBCVD-SiC in TRISO fuel, a microstructural change caused by neutron irradiation during operation has to be fully considered.

Development of Micro Tensile Test of CVD-SiC coating Layer for TRISO Nuclear Fuel Particles at elevated temperature

  • Lee, Hyun-Min;Park, Kwi-Il;Kim, Do-Kyung
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2012년도 춘계학술발표대회
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    • pp.95.1-95.1
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    • 2012
  • Very High Temperature gas cooler Reactor (VHTR) has been considered as one of the most promising nuclear reactor because of many advantages including high inherent safety to avoid environmental pollution, high thermal efficiency and the role of secondary energy source. The TRISO coated fuel particles used in VHTR are composed of 4 layers as OPyC, SiC, IPyC and buffer PyC. The significance of CVD-SiC coatings used in tri-isotropic(TRISO) nuclear coated fuel particles is to maintain the strength of the whole particle. Various methods have been proposed to evaluate the mechanical properties of CVD-SiC film at room temperature. However, few works have been attempted to characterize properties of CVD-SiC film at high temperature. In this study, micro tensile system was newly developed for mechanical characterization of SiC thin film at elevated temperature. Two kinds of CVD-SiC films were prepared for micro tensile test. SiC-A had [111]-preferred orientation, while SiC-B had [220]-preferred orientation. The free silicon was co-deposited in SiC-B coating layer. The fracture strength of two different CVD-SiC films was characterized up to $1000^{\circ}C$.The strength of SiC-B film decreased with temperature. This result can be explained by free silicon, observed in SiC-B along the columnar boundaries by TEM. The presence of free silicon causes strength degradation. Also, larger Weibull-modulus was measured. The new method can be used for thin film material at high temperature.

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유리탄소의 동시증착에 의한 TRISO 피복입자의 ZrC 코팅층 미세구조와 화학양론비 제어 (Microstructure of ZrC Coatings of TRISO Coated Particles by Codeposition of Free Carbon and Control of Stoichiometry)

  • 고명진;김대종;박지연;조문성;김원주
    • 한국세라믹학회지
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    • 제50권6호
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    • pp.446-450
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    • 2013
  • TRISO coated particles with a ZrC barrier layer were fabricated by a fluidized-bed chemical vapor deposition (FBCVD) method for a use in a very high temperature gas-cooled reactor (VHTR). The ZrC layer was deposited by the reaction between $ZrCl_4$ and $CH_4$ gases at $1500^{\circ}C$ in an $Ar+H_2$ mixture gas. The amount of free carbon codeposited with in ZrC was changed by controlling the dilution gas ratio. Near-stoichiometric ZrC phase was also deposited when an impeller was employed to a $ZrCl_4$ vaporizer which effectively inhibited the agglomeration of $ZrCl_4$ powders during the deposition process. A near-stoichiometric ZrC coating layer had smooth surface while ZrC containing the free carbon had rough surface with tumulose structure. Surface roughness of ZrC increased further as the amount of free carbon increased.

TRISO 피복 입자에서 증착 조건이 탄화규소층의 특성에 미치는 영향 (Effect of Deposition Parameters on the Property of SiC Layer in TRISO-Coated Particles)

  • 박종훈;김원주;박정남;박경환;박지연;이영우
    • 한국재료학회지
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    • 제17권3호
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    • pp.160-166
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    • 2007
  • TRISO coatings on $ZrO_{2}$ surrogate kernels were conducted by a fluidized-bed chemical vapor deposition (FBCVD) method. Effects of the deposition temperature and the gas flow rate on the properties of SiC layer were investigated in the TRISO-coated particles. Deposition rate of the SiC layer decreased as the deposition temperature increased in the temperature range of $1460^{\circ}-1550^{\circ}C$. At the deposition temperature of $1550^{\circ}C$ the SiC layer contained an excess carbon, whereas the SiC layers had stoichiometric compositions at $1460^{\circ}C\;and\;1500^{\circ}C$. Hardness and elastic modulus measured by a nanoindentation method were the highest in the SiC layer deposited at $1500^{\circ}C$. The SiC layer deposited at the gas flow rate of 4000 sccm exhibited a high porosity and contained large pores more than $1{\mu}m$, being due to a violent spouting of particles. On the other hand, the SiC layer deposited at 2500 sccm revealed the lowest porosity.