Trapezoid mesa와 Half Sidewall Technique을 이용한 4H-SiC Trench MOS Barrier Schottky(TMBS) Rectifier (A 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier using the trapezoid mesa and the upper half of sidewall)
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- 전기전자학회논문지
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- 제17권4호
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- pp.428-433
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- 2013