KIEE International Transactions on Electrophysics and Applications

The Korean Institute of Electrical Engineers (대한전기학회)
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Modified Trench MOS Barrier Schottky (TMBS) Rectifier

  • Moon Jin-Woo (Process Development Group, Product Technology Team) ;
  • Choi Yearn-Ik (School of Electrical and Computer Engineering, College of Information Technology, Ajou University) ;
  • Chung Sang-Koo (Division of Computer, Electronic and Communication Engineering, Yangbian University of Science and Technology)
  • Published : 2005.04.01
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Abstract

A trench MOS barrier Schottky (TMBS) rectifier is proposed which utilizes the upper half of the trench sidewall as an active area. The proposed structure improves the forward voltage drop by 20$\%$ in comparison with the conventional one without degradation in breakdown voltage. An analytical model for the field distribution is given and compared with two-dimensional numerical simulations.

Keywords

References

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