• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.12
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• pp.1995-2000
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• 1989

The ion beam system of 20keV C-W (Cockroft Walton) type composed of the AuGe alloy LMIS(Liquid Metal Ion Source) has been designed and constructed. For the fabrication of the ohmic contact to the n-GaAs, the ion beam extracted from the AuGe alloy source was implanted into the n-GaAs, and it was measured by contact resistivity. The stable AuGe ion beam(2.5\ulcorner/cm\ulcorner was obtained at the extraction voltage of 14.5kV. The measurements of the contact resistivity were done by the TLM (Transmission Line Model) method and the specific contact resistivity was found to be 2.4x10**-5 \ulcornercm\ulcornerfor the implanted sample by the 1.9x10**20/cm**3 and the annealed sample at 30\ulcorner for 2 min.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1311-1312
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using 4he C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}{\cdot}cm^2$ of was obtained due to the improved interfacial adhesion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.406-407
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using the C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}cm^2$ was obtained due to the improved interfacial adhesion.

• Proceedings of the KSR Conference
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• 2009.05b
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• pp.403-406
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• 2009

Recently, electricity is essential for human lives. Modem people take cultural benefits due to the development of the electric power system and the spread of the high tech-electric appliances, the cell phones, and etc. However, the electromagnetic field problems become prominent figures owing to the fault of the communication devices around the power line and the biological effect, and etc. In this paper, we introduce the simple electromagnetic field calculation based on the transmission line matrix method, prior to the analysis about the influence of electromagnetic field. Simulation object is the inner part of the trailer car in the high speed train. Unlike the existing paper we submitted, we analyze not only the magnetic field but the electric field in the inner part of the trailer car which makes up the high speed train.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.4
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• pp.272-275
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• 2019

We investigated the electrical characteristics of amorphous silicon-zinc-tin-oxide (a-SZTO) thin films deposited by RF-magnetron sputtering at room temperature depending on the deposition time. We fabricated a thin film transistor (TFT) with a bottom gate structure and various channel thicknesses. With increasing channel thickness, the threshold voltage shifted negatively from -0.44 V to -2.18 V, the on current ($I_{on}$) and field effect mobility (${\mu}_{FE}$) increased because of increasing carrier concentration. The a-SZTO film was fabricated and analyzed in terms of the contact resistance and channel resistance. In this study, the transmission line method (TLM) was adopted and investigated. With increasing channel thickness, the contact resistance and sheet resistance both decreased.

• Proceedings of the Korea Institute of Convergence Signal Processing
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• 2000.08a
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• pp.265-268
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• 2000

In this paper, we propose an algorithm, an optimized architecture, and an implementation for an improved performance of image downscaler. The proposed downscaler uses two-dimensional digital filters for horizontal and vertical scalings, respectively. It also improves scaling precisions and decreases the loss of data, compared with the 1/32 scaler 〔1〕. In order to achieve the optimization, the digital filters are implemented by the multiplexer -adder type scheme 〔2〕. The scaler is designed by using the Verilog-HDL. It is synthesized into gates by using the Samsung 0.35 um STD90 TLM library.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.601-608
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• 2014

In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of $Al_2O_3$ gate insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance of the unprotected TLM pattern after RTP was rapidly increased to $1323{\Omega}/{\square}$ from the value of $400{\Omega}/{\square}$ of the as-grown sample due to thermal damage during high temperature RTP. On the other hand, the sheet resistances of the TLM pattern protected with thin $Al_2O_3$ layer (when its thickness is larger than 5 nm) were slightly decreased after high-temperature RTP since the deposited $Al_2O_3$ layer effectively neutralizes the acceptor-like states on the surface of AlGaN layer which in turn increases the 2DEG density. AlGaN/GaN MISHFET with 8 nm-thick $Al_2O_3$ gate insulator exhibited extremely low gate leakage current of $10^{-9}A/mm$, which led to superior device performances such as a very low subthreshold swing (SS) of 80 mV/dec and high $I_{on}/I_{off}$ ratio of ${\sim}10^{10}$. The PF emission and FN tunneling models were used to characterize the gate leakage currents of the devices. The device with 5 nm-thick $Al_2O_3$ layer exhibited both PF emission and FN tunneling at relatively lower gate voltages compared to that with 8 nm-thick $Al_2O_3$ layer due to thinner $Al_2O_3$ layer, as expected. The device with 10 nm-thick $Al_2O_3$ layer, however, showed very high gate leakage current of $5.5{\times}10^{-4}A/mm$ due to poly-crystallization of the $Al_2O_3$ layer during the high-temperature RTP, which led to very poor performances.

• Journal of KIISE:Computer Systems and Theory
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• v.35 no.9_10
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• pp.485-496
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• 2008

As the complexity of SoC (System-on-Chip) design increases dramatically. traditional system performance analysis and verification methods based on RTL (Register Transfer Level) are no more valid for increasing time-to-market pressure. Therefore a new design methodology is desperately required for system verification in early design stages. and hardware software (HW-SW) cosimulation at TLM (Transaction Level Modeling) level has been researched widely for solving this problem. However, most of HW-SW cosimulators support few restricted ion levels only, which makes it difficult to integrate HW-SW cosimulators with different ion levels. To overcome this difficulty, this paper proposes a multipurpose framework for HW SW cosimulation to provide systematic SoC design flow starting from software application design. It supports various design techniques flexibly for each design step, and various HW-SW cosimulators. Since a platform design is possible independently of ion levels and description languages, it allows us to generate simulation models with various ion levels. We verified the proposed framework to model a commercial SoC platform based on an ARM9 processor. It was also proved that this framework could be used for the performance optimization of an MJPEG example up to 44% successfully.

• Journal of fish pathology
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• v.2 no.2
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• pp.99-108
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• 1989

Anaethetics are needed for handling fish, especially for transportation, tagging and grading. Among them, MS-222 has been popular in aquaculture since it has an excellent anaesthetic effect. However, MS-222 is more expensive than other chemicals. Benzocaine (Ethyl-p-aminobenzoate) has a similar molecular formula and equivalent anaesthetic effect to MS-222, and is cheaper. The purpose of this study was first to compare anaesthetic effects (Benzocaine) under various conditions : temperature, concentration, pH and body weight. Second purpose was to compare actual anaesthetic effects at 50 ppm benzocaine at ambient temperature and pH for the grading of tilapia. The results of this study are as follows : 1. The effect of anaesthesia at $24^{\circ}C$ was better with low pH, that is 5.6 than high pH 6.6 and 7.6. 2. The anaesthetic effect was not different at different body weight form 11g to 1,350g. 3. The fish were anaesthetized in 4~10 minutes at 50 ppm benzocaine at temperature. $20{\sim}24^{\circ}C$ and pH 6.8~7.3 and recovered in 4~6 minutes when they were put back in the fresh water after 30 minutes anaesthesia. 4. Benzocaine was more sensitive at pH fluctuation than temperature. 5. Twenty four hour-TLm of Benzocaine was 50 ppm at $24^{\circ}C$, pH 6.8 when the fish were put back in the fresh water after 120 minutes.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.8
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• pp.1-6
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• 2010

We report on the electrical properties of Ti/Al/Ni/Au (20 nm/ 150 nm/ 30 nm/ 100 nm) Ohmic contacts and the anisotropic conductivity of n-type ${\alpha}$-plane ([11-20]) GaN grown on $\gamma$-plane ([1-102]) sapphire substrates. The Ti/Al/Ni/Au Ohmic contacts and their sheet resistances are characterized by using the transfer length method (TLM) as a function of azimuthal angles. It is found that the specific contact resistance does not depend on the axis orientation and there are significant electrical anisotropy in ${\alpha}$-plane GaN films on $\gamma$-plane sapphire substrates, and the sheet resistance varies with azimuthal angles. The sheet resistance values in the direction parallel to m-axis [1-100] are 25% ~ 75% lower than those parallel to c-axis [0001] directions. Thus, Basal stacking faults (BSFs) are offered as a feasible source of the anisotropic mobility in defected m-axis direction because the band-edge discontinuities owing to the differential band gap structure.