• Journal of information and communication convergence engineering
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• v.12 no.2
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• pp.97-103
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• 2014

In spectrum sensing, there is a tradeoff between the probability of missed detection and the probability of a false alarm according to the value of the sensing threshold. Therefore, it is important to determine the sensing threshold suitable to the environment of cognitive radio networks. In this study, we consider a cognitive radio-based ad hoc network where secondary users directly communicate by using the same frequency band as the primary system and control their transmit power on the basis of the distance between them. First, we investigate a condition in which the primary and the secondary users can share the same frequency band without harmful interference from each other, and then, propose an algorithm that controls the sensing threshold dynamically on the basis of the transmit power of the secondary user. The analysis and simulation results show that the proposed sensing threshold control algorithm has low probabilities of both missed detection and a false alarm and thus, enables optimized spectrum sharing between the primary and the secondary systems.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.559-563
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• 2002

A threshold voltage model of SiC N-channel MOSFETs for high-temperature and hard radiation environments has been developed and verified by comparing with experimental results. The proposed model includes the difference in the work functions, the surface potential, depletion charges and SiC/$SiO_2$acceptor-like interface state charges as a function of temperature. Simulations of the model shoved that interface slates were the most dominant factor for the threshold voltage decrease as the temperature increase. To verify the model, SiC N-chnnel MOSFETS were fabricated and threshold voltages as a function of temperature were measured and compared wish model simulations. From these comparisons, extracted density of interface slates was $4{\times}10^{12}\textrm{cm}^{-2}eV^{-1}$.

• Communications for Statistical Applications and Methods
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• v.19 no.5
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• pp.705-720
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• 2012

In this paper, we introduce a hierarchical Bayesian model to simultaneously estimate the thresholds of each 6 cities. It was noted in the literature there was a dramatic increases in the number of deaths if the mean temperature passes a certain value (that we call a threshold). We estimate the difference of mortality before and after the threshold. For the hierarchical Bayesian analysis, some proper prior distribution of parameters and hyper-parameters are assumed. By combining the Gibbs and Metropolis-Hastings algorithm, we constructed a Markov chain Monte Carlo algorithm and the posterior inference was based on the posterior sample. The analysis shows that the estimates of the threshold are located at $25^{\circ}C{\sim}29^{\circ}C$ and the mortality around the threshold changes from -1% to 2~13%.

• Journal of the Korean Institute of Telematics and Electronics
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• v.17 no.2
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• pp.10-14
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• 1980

In this paper, the second harmonic distortion of the DH L.D. is analyzed using dynamic and static rate equations. In this analysis the modulation current Jm is changed by varang the iinjection current with the relation of where m stands for modulation index. It is showed that relative harmonic distortion ( ) has a peak exactly at the threshold current. It is also confirmed that this method is simople and more accurate than previously reported methods in the decision of the threshold current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.387-393
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• 2016

Threshold voltage shift has been observed from many thin-film transistors (TFTs) and the time evolution of the shift can be modeled as the stretched-exponential and -hyperbola function. These analytic models are derived from the kinetic equation for defect-creation or charge-trapping and the equation consists of only reversible reactions. In reality TFT's a shift is permanent due to an irreversible reaction and, as a result, it is reasonable to consider that both reversible and irreversible reactions exist in a TFT. In this paper the case when both reactions exist in parallel and make a combined threshold voltage shift is modeled and simulated. The results show that a combined threshold voltage shift observed from a TFT may agrees with the analytic models and, thus, the analytic models don't guarantee whether the cause of the shift is defection-creation or charge-trapping.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.1
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• pp.1-7
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• 2012

As the standard lighting required in the threshold zone of a road tunnel is determined by the enough contrast. Lighting design, therefore, must be determined by the calculation method of threshold luminance based on the adaptation luminance of the driver approaching the tunnel. The veiling luminance and the luminance in the access zone were measured at different time and in different weather using the veiling luminance method, a kind of perceived contrast methods, and the L20 method when the range of vision was 20 degrees. On the basis of the measured data each threshold luminance was calculated and its results were analyzed.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2012.11a
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• pp.259-262
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• 2012

In this paper, we propose a new fast algorithm for effective scene change detection. The proposed algorithm exploits Otsu threshold matching technique, which was proposed earlier. In this method, the current and the reference frames are divided into square blocks of particular size. After doing so, the pixel histogram of each block is generated. According to Otsu method, every histogram distribution is assumed to be bimodal, i.e. pixel distribution can be divided into two groups, based on within-group variance value. The pixel value that minimizes the within-group variance is said to be Otsu threshold. After Otsu threshold is found, the same procedure is performed at the reference frame. If the difference between Otsu threshold of a block in the current frame and co-located block in the reference frame is larger than predefined threshold, then a scene change between those two blocks is detected.

• Journal of Satellite, Information and Communications
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• v.8 no.1
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• pp.61-65
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• 2013

In this paper, we propose system model to solve conventional threshold problem of using fixed false alarm for energy spectrum sensing. Spectrum sensing reliability is ensured when Secondary user have high SNR. Thus, it is not reasonable using fixed optional false alarm without considering CR user's SNR. So, we propose adaptive threshold method. adaptive threshold is decided by controling FA according to CR user's SNR.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.6
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• pp.213-224
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• 2003

The proposed algorithm can always set up the optimal threshold value regardless of channel characteristics using an adaptive threshold establishment method that determines the threshold level according to channel noise power, and then it uses the specially designed training symbols that can make the algorithm's estimation performance be less sensitive to power delay profile variation in a multipath channel. In result, the estimation performance of the proposed technique is less affected by channel characteristic variation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.221-226
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• 2008

A new two dimensional (2-D) analytical model for the Threshold Voltage on dual material surrounding gate (DMSG) MOSFETs is presented in this paper. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expression for the threshold voltage and sub-threshold swing is derived. It is seen that short channel effects (SCEs) in this structure is suppressed because of the perceivable step in the surface potential which screens the drain potential. We demonstrate that the proposed model exhibits significantly reduced SCEs, thus make it a more reliable device configuration for high speed wireless communication than the conventional single material surrounding gate (SMSG) MOSFETs.