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http://dx.doi.org/10.4313/JKEM.2002.15.7.559

Modeling the Threshold Voltage of SiC MOSFETs for High Temperature Applications  

이원선 (충북대학교 전기전자및컴퓨터공학부)
오충완 (충북대학교 전기전자및컴퓨터공학부)
최재승 (충북대학교 전기전자및컴퓨터공학부)
신동현 (충북대학교 전기전자및컴퓨터공학부)
이형규 (충북대학교 전기전자및컴퓨터공학부)
박근형 (충북대학교 전기전자및컴퓨터공학부)
김영석 (충북대학교 전기전자및컴퓨터공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.15, no.7, 2002 , pp. 559-563 More about this Journal
Abstract
A threshold voltage model of SiC N-channel MOSFETs for high-temperature and hard radiation environments has been developed and verified by comparing with experimental results. The proposed model includes the difference in the work functions, the surface potential, depletion charges and SiC/$SiO_2$acceptor-like interface state charges as a function of temperature. Simulations of the model shoved that interface slates were the most dominant factor for the threshold voltage decrease as the temperature increase. To verify the model, SiC N-chnnel MOSFETS were fabricated and threshold voltages as a function of temperature were measured and compared wish model simulations. From these comparisons, extracted density of interface slates was $4{\times}10^{12}\textrm{cm}^{-2}eV^{-1}$.
Keywords
SiC; MOSFET; Threshold Voltage; Model;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
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