• Title/Summary/Keyword: THRESHOLD

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A Comparison Study of Bayesian Methods for a Threshold Autoregressive Model with Regime-Switching (국면전환 임계 자기회귀 분석을 위한 베이지안 방법 비교연구)

  • Roh, Taeyoung;Jo, Seongil;Lee, Ryounghwa
    • The Korean Journal of Applied Statistics
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    • v.27 no.6
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    • pp.1049-1068
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    • 2014
  • Autoregressive models are used to analyze an univariate time series data; however, these methods can be inappropriate when a structural break appears in a time series since they assume that a trend is consistent. Threshold autoregressive models (popular regime-switching models) have been proposed to address this problem. Recently, the models have been extended to two regime-switching models with delay parameter. We discuss two regime-switching threshold autoregressive models from a Bayesian point of view. For a Bayesian analysis, we consider a parametric threshold autoregressive model and a nonparametric threshold autoregressive model using Dirichlet process prior. The posterior distributions are derived and the posterior inferences is performed via Markov chain Monte Carlo method and based on two Bayesian threshold autoregressive models. We present a simulation study to compare the performance of the models. We also apply models to gross domestic product data of U.S.A and South Korea.

NbOx 박막의 결정도에 따른 Threshold Switching 특성 변화 연구

  • Kim, Jong-Il;Kim, Jong-Gi;Lee, Gyu-Min;Kim, Yeong-Jae;Son, Hyeon-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.353-353
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    • 2014
  • 본 연구에서는 Sputter를 이용하여 Room Temp.에서 증착된 NbOx 박막의 열처리에 따른 결정도를 분석하고, 이러한 결정도의 변화가 Metal Insulator Transition특성에 의한 Threshold switching에 어떠한 영향을 미치는 지에 대하여 연구하였다. NbOx 박막의 threshold switching 특성 분석을 위해, 1.4um의 TiN 위에 15nm의 NbOx를 증착하고 Top Electrode로 Pt를 증착하여 측정하였다. 증착된 NbOx는 Nb metal target으로 Reactive Sputter를 이용하여 Room Temp.에서 증착하였으며, 조성은 Partial Oxygen Pressure를 이용하여 조절하였다. 증착된 박막의 결정도는 TEM 및 XRD를 통하여 분석하였고 조성은 XPS를 이용하여 분석하였다. Sputter로 NbOx 증착 시 Partial Oxygen Pressure에 따른 조성을 XPS로 확인한 결과, Partial Oxygen Pressure 2%에서 NbOx의 조성을, 5%이상일 경우, Nb2O5의 조성을 가지는 것으로 확인되었다. Partial Oxygen Pressure 2%에서 증착한 NbOx 박막의 열처리에 따른 결정도를 분석한 결과, As-Dep상태에서는 amorphous상태였다가 600'C이상으로 1분간 열처리를 하였을 때 NbOx의 결정도가 증가함을 확인하였다. I-V 특성 측정 결과, 열처리 온도가 증가함에 따라 initial current가 점진적으로 증가하는 경향을 보이는데, 이는 열처리 시 amorphous상에서 poly-crystalline으로 미세구조의 변화가 일어나면서 grain boundary가 생성되며 생성된 grain boundary를 통해 leakage current가 증가하는 것으로 추측된다. 또한, 결정도가 증가함에 따라 electro-forming voltage가 감소하는 경향을 보이며 안정된 threshold switching 특성을 보이고 있다. 특히, 700'C 1분간 열처리 시에는 electro-forming 과정이 없이 threshold switching이 나타나는 현상이 관찰되었다. 이로 미루어 보아, threshold switching에서 나타나는 forming 현상은 local joule heating에 의해 박막이 결정화 되는 과정으로 추측된다. 결론적으로, 박막의 결정도가 initial current 및 Threshold switching 특성에 큰 영향을 미치는 것으로 예상된다.

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Analysis of Relation between Conduction Path and Threshold Voltages of Double Gate MOSFET (이중게이트 MOSFET의 전도중심과 문턱전압의 관계 분석)

  • Jung, Hakkee;Han, Jihyung;Lee, Jongin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.818-821
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    • 2012
  • This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

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Determination of filtering condition and threshold for detection of Gait-Cycles under Various Gait Speeds and Walkway Slopes (다양한 보행속도와 경사각에 대한 보행수 검출을 위한 필터링 조건과 역치의 결정)

  • Kwon, Yu-Ri;Kim, Ji-Won;Lee, Jae-Ho;Tack, Gye-Rae;Eom, Gwang-Moon
    • Journal of Biomedical Engineering Research
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    • v.30 no.6
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    • pp.516-520
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    • 2009
  • The purpose of this study is to determine optimal filtering condition and threshold for the detection of gait-cycles for various walkway slopes as well as gait velocities. Ten young healthy subjects with accelerometer system on thigh and ankle walked on a treadmill at 9 conditions (three speeds and three slopes) for 5 minutes. Two direction signals, i.e. anterior-posterior (AP) and superior-inferior (SI) directions, of each sensor (four sensor orientations) were used to detect specific events of gait cycle. Variation of the threshold (from -1G to 1G) and lowpass cutoff frequency (fc) were applied to the event detection and their performance was evaluated according to the error index (EI), which was defined as the combination of the accuracy and false positive rate. Optimal fc and threshold were determined for each slope in terms of the EI. The optimal fc, threshold and their corresponding EI depended much on the walkway slope so that their coefficients of variation (CV) ranged 19~120%. When all data for 3 slopes were used in the identification of optimal conditions for each sensor, the best error indices for all sensor orientations were comparable ranging 1.43~1.76%, but the optimal fc and threshold depended much on the sensor position. The result indicates that the gait-cycle detection robust to walkway slope is possible by threshold method with well-defined filtering condition and threshold.

The Effect of Gunshot or Cannonade Training during Military Service on Hearing Threshold Levels (군복무시 사격 및 포격훈련에 의한 소음폭로력이 청력에 미치는 영향)

  • Kim, Heon;Cho, Soo-Hun;Lim, Hyun-Sul
    • Journal of Preventive Medicine and Public Health
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    • v.24 no.1 s.33
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    • pp.86-92
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    • 1991
  • To test if exposure history to rifle fire or cannonade training during military duty can induce hearing loss, history of personal military service and histroy of gunshot exposure were asked to 228 male college students with self -administrative questionnaire. Otoscopic examination and Rinne's test were performed if any abnormal finding was detected by pure-tone audiometry. Average hearing threshold levels of 500 Hz, 1,000 Hz, 2,000 Hz, 4,000 Hz and threshold levels at 4,000 Hz were calculated for 112 students who were remained after exclusion of cases with history of ear disease, of ototoxic drug administration, and of neuropsychiatric disease, and mean of those were compared between group of students who have completed military duty (completed group) and group of those who have not (not-completed group), and between group exposed (exposed group) and group unexposed to gunshot sound (unexposed group). Mean of average hearing threshold level and mean of threshold levels at 4,000 Hz of completed group and those of exposed group were higher than those of not-completed group and unexposed group, respectively. Proportion of cases that average threshold level was greater than 40 dB or threshold levels at 4,000 Hz was greater than 50 dB were higher also in completed group and exposed group than in duty not-completed group and unexposed group, respectively Multiple linear regression analysis including age, duration of military service, degree of gunshot sound exposure as independant variables and average hearing threshold level as dependant variable, was performed in order to estimate the effect of age on hearing, and any considerable effect of age on hearing could not be found. In conclusion, hearing impairment can be induced by rifle fire or cannonade training.

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Deviation of Threshold Voltages for Conduction Path of Double Gate MOSFET (이중게이트 MOSFET의 전도중심에 따른 문턱전압의 변화)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.11
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    • pp.2511-2516
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    • 2012
  • This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

An Automatic Portscan Detection System with Adaptive Threshold Setting

  • Kim, Sang-Kon;Lee, Seung-Ho;Seo, Seung-Woo
    • Journal of Communications and Networks
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    • v.12 no.1
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    • pp.74-85
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    • 2010
  • For the purpose of compromising hosts, attackers including infected hosts initially perform a portscan using IP addresses in order to find vulnerable hosts. Considerable research related to portscan detection has been done and many algorithms have been proposed and implemented in the network intrusion detection system (NIDS). In order to distinguish portscanners from remote hosts, most portscan detection algorithms use a fixed threshold that is manually managed by the network manager. Because the threshold is a constant, even though the network environment or the characteristics of traffic can change, many false positives and false negatives are generated by NIDS. This reduces the efficiency of NIDS and imposes a high processing burden on a network management system (NMS). In this paper, in order to address this problem, we propose an automatic portscan detection system using an fast increase slow decrease (FISD) scheme, that will automatically and adaptively set the threshold based on statistical data for traffic during prior time periods. In particular, we focus on reducing false positives rather than false negatives, while the threshold is adaptively set within a range between minimum and maximum values. We also propose a new portscan detection algorithm, rate of increase in the number of failed connection request (RINF), which is much more suitable for our system and shows better performance than other existing algorithms. In terms of the implementation, we compare our scheme with other two simple threshold estimation methods for an adaptive threshold setting scheme. Also, we compare our detection algorithm with other three existing approaches for portscan detection using a real traffic trace. In summary, we show that FISD results in less false positives than other schemes and RINF can fast and accurately detect portscanners. We also show that the proposed system, including our scheme and algorithm, provides good performance in terms of the rate of false positives.

Application of Streamflow Drought Index using Threshold Level Method (임계수준 방법을 이용한 하천수 가뭄지수의 적용)

  • Sung, Jang Hyun;Chung, Eun-Sung
    • Journal of Korea Water Resources Association
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    • v.47 no.5
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    • pp.491-500
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    • 2014
  • To estimate the severity of streamflow drought, this study introduced the concept of streamflow drought index based on threshold level method and Seomjingang Dam inflow was applied. Threshold levels used in this study are fixed, monthly and daily threshold, The $1^{st}{\sim}3^{rd}$ analysis results of annual drought, the severe hydrological droughts were occurred in 1984, 1988 and 1995 and the drought lasted for a long time. Annual compared to extreme values of total water deficit and duration, the drought occurred in 1984, 1988, 1995 and 2001 was serious level. In the results of study, because a fixed threshold level is not reflect seasonal variability, at least the threshold under seasonal level was required. Threshold levels determined by the monthly and daily were appropriate. The proposed methodology in this study can be used to forecast low-flow and determine reservoirs capacity.

Share Renewal Scheme in Proactive Secret Sharing for Threshold Cryptosystem (임계 암호시스템 구현을 위한 능동적 비밀 분산에서의 공유 갱신 방법)

  • 이윤호;김희열;정병천;이재원;윤현수
    • Journal of KIISE:Computer Systems and Theory
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    • v.30 no.5_6
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    • pp.239-249
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    • 2003
  • The secret sharing is the basic concept of the threshold cryptosystem and has an important position in the modern cryptography. At 1995, Jarecki proposed the proactive secret sharing to be a solution of existing the mobile adversary and also proposed the share renewal scheme for (k, n) threshold scheme. For n participants in the protocol, his method needs $O(n^2)$ modular exponentiation per one participant. It is very high computational cost and is not fit for the scalable cryptosystem. In this paper, we propose the efficient share renewal scheme that need only O(n) modular exponentiation per participant. And we prove our scheme is secure if less than img ${\frac{1}{2}}$ n-1 adversaries exist and they are static adversary.

Threshold Voltage Roll-off for Bottom Gate Voltage of Asymmetric Double Gate MOSFET (비대칭 이중게이트 MOSFET의 하단게이트 전압에 따른 문턱전압이동현상)

  • Jung, Hakkee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2014.05a
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    • pp.741-744
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    • 2014
  • This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.

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