• Title/Summary/Keyword: TFT-LCDs

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A Pixel Structure for Reflective Color TFT-LCDs with 27-color in Still-Image

  • Jang, Dae-Jung;Sung, Yoo-Chang;Kwon, Oh-Kyong;Kim, Hyun-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.153-156
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    • 2002
  • We have developed a pixel structure for reflective color TFT-LCD which can display 27-color in still-image. The proposed pixel can display 3 gray scale in still image; white, black and median gray. This paper shows the concept and the driving method of the proposed pixel. Finally this paper compares power consumption and area with the Toshiba's DMOG technology.

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Fully Cu-based Gate and Source/Drain Interconnections for Ultrahigh-Definition LCDs

  • Kugimiya, Toshihiro;Goto, Hiroshi;Hino, Aya;Nakai, Junichi;Yoneda, Yoichiro;Kusumoto, Eisuke
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1193-1196
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    • 2009
  • Low resistivity interconnection and high-mobility channel are required to realize ultrahigh-definition LCDs such as 4k ${\times}$ 2k TVs. We evaluated fully Cu-based gate and Source/Drain interconnections, consisting of stacked pure-Cu/Cu-Mn layers for TFT-LCDs, and found the underlying Cu-Mn alloy film has superior adhesion to glass substrates and CVD-SiOx films. It was also confirmed that wet etching of the Cu/Cu-Mn films without residues and low contact resistance with both channel IGZO and pixel ITO films can be obtained. It is thus considered that the stacked Cu/Cu-Mn structure is one of candidates to replacing conventionally pure-Cu/refractory metal.

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High Brightness Prism Light-guide Plate for TFT-LCDs Using Optical Simulation and Novel Injection Mold Process (광학시뮬레이션과 새로운 사출성형법을 사용한 TFT-LCD용 고휘도 프리즘 도광판)

  • Han, Jeong-Min;Shon, Jin-Geun
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.61 no.2
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    • pp.93-96
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    • 2012
  • We have designed high performance prism light-guide plate (LGP) in 17 inch TFT-LCD. In test result to embody high brightness BLU in case of LGP of base and upper surface with 17 inch, thickness 8mm adding prism construct. Using optical simulation, we forecast the brightness and uniformity in LGP with prism structure. And we adopted novel injection mold method and Nickel stamper to make actual evolution sample. Novel injection mold process has steady heating time zone in heat cycle time of injection mold process. For this novel heat cycle control, we achieved above 90[%] height prism structure as our design. It is superior brightness improvement than previous that of printing form about some 20[%] and in this course to embody actual material it succeeded prism LGP production by 17 inch injection form process.

Study for the Real Optical Path in the TFT-LCD 3-dimensional Simulation (TFT-LCD 3차원 시뮬레이션에서의 광 경로에 대한 고려)

  • Choi Kyoung-Uk;Kim Gee-Bum;Park Woo-Sang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.2
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    • pp.195-199
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    • 2006
  • We report a novel simulation method to calculate optical transmission considering the real paths of optic introduced in a unit pixel of TFT-LCDs using three-dimensional molecular director simulation of the tensor model. The simulation of optical path transmission profile was carried out by calculating new permittivity considered the real paths of optic in liquid crystal cell. As a result, it was clarified that the electro-optic characteristics such as movement of disclination line, contrast ratio and transmittance profile show a large difference according to the viewing angle compared with the conventional method.

Analysis on the Gray Scale Capability of TFT-LCD using Three-dimensional Simulation (3차원적 시뮬레이션에 의한 TFT-LCD의 Gray Scale 성능 분석)

  • Kim, Sun-Woo;Park, Woo-Sang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.3
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    • pp.250-256
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    • 2007
  • We analyzed the effect of a pixel and all the inter-electrode capacitances in a unit pixel of TFT-LCDs on the gray scale capability. The pixel and all the inter-electrode parasitic capacitances were obtained from the tree dimensional profiles of potential distribution and molecular director considering lateral fields generated at the edge of the pixel. To obtain the RMS and kickback voltages of the pixel, we constructed an equivalent circuit of the panel containing all the parasitic capacitances. The calculation was performed though H-SPICE. As results, we confirmed that the pixel becomes smaller, the effect of parasitic capacitances on the gray scale capability becomes larger.

Analysis on the Electric Properties of TFT-LCDs (TFT-LCD의 전기적 특성 연구)

  • Kim, Myoung-Chul
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.4
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    • pp.368-375
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    • 2008
  • In this paper, we calculated the pixel and all the inter-electrode capacitances in a unit pixel of three kinds of TFT-LCD modes in order to realize the full color image. And we analyzed the effect on applied voltage. We fixed size of sub-pixel and designed a unit pixel of three kinds of TFT-LCD modes. We calculated rigorously the pixel and all the inter-electrode capacitances by the three dimensional simulation. And we expanded one pixel into whole panel using H-SPICE. As a result, we calculated the RMS voltage and kickback voltage which most affect gray scale of the pixel and calculated the number of bit according to permissible range of minimum gray scale using V-T curve.

Simulations of Pixel Characteristics for Large Size and High Qualify TFT-LCD using a new sophisticated Capacitance Formulas (새로운 정전용량 계산식물 이용한 대면적 .고화질 TFT-LCD의 화소 특성 시뮬레이션)

  • 윤영준;정순신;김태형;박재우;최종선
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.613-616
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    • 1999
  • An active-matrix LCD using thin film transistors (TFTs)has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate signal distortion and pixel charging capability, which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the new set of capacitance models on the pixel operations can be effectively analyzed, The set of models which is adopted from VLSI interconnections calculate more precise capacitance. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

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Effects of Resistivity of Gate Line Material on TFT-LCD Pixel Operations (게이트 라인 물질의 저항률이 TFT-LCD 화소의 동작에 미치는 영향)

  • 이영삼;최종선
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.321-324
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    • 1998
  • Pixel-Design Array Simulation Tool(PDAST) was used to profoundly the gate signal distortion and pixel changing capability, which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the resistivity of gate line material on the pixel operations can be effectively analyzed. The gate signal delay, pixel charging ratio, level-shift of the pixel voltage were simulated with varying the resis5tivity of the gate line material. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

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Automatic Defect inspection of TFT-LCD Panels Using a Pre-Filter (프리필터를 이용한 TFT-LCD 패널의 자동 결함 검출)

  • Nam, Seung-Uk;Seo, Sung-Dea;Nam, Hyun-Do;Ahn, Dong-Jun
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1864-1865
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    • 2007
  • In this paper, we proposed pre-filter algorithms which using frequency domain analysis method, for the detections of defects in large-sized Thin Film Transistor-Liquid Crystal Display(TFT-LCD) panel surfaces. We performed frequency analysis with 1-D, 2-D FFT methods for extract periodic patterns of lattice structures in TFT-LCDs. To remove this patterns, band-stop filters were used for eliminating specific frequency components. In order to acquire only defected images, we used 2-D inverse FFT methods which can be reverts images that remains defects.

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Two-Dimensional Device Simulator TFT2DS for Hydrogenated Amorphous Silicon Thin Film Transistors (수소화된 비정질 실리콘 박막 트랜지스터의 이차원 소자 시뮬레이터 TFT2DS)

  • Choe, Jong-Seon;Neudeck, Gerold W.
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.1
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    • pp.1-11
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    • 1999
  • Hyrdogenated amorphous silicon thin film transistors are used as a pixel switching device of TFT-LCDs and very active research works on a-Si:H TFTs are in progress. Further development of the technology based on a-Si:H TFTs depends on the increased understanding of the device physics and the ability to accurately simulate the characteristics of them. A two-dimensional device simulator based on the realistic and flexible physical models can guide the device designs and their optimizations. A non-uniform finite-difference TFT Simulation Program, TFT2DS has been developed to solve the electronic transport equations for a-Si:H TFTs. In TFT2DS, many of the simplifying assumptions are removed. The developed simulator was used to calculate the transfer and output characteristics of a-Si:H TFTs. The measured data were compared with the simulated ones for verifying the validity of TFT2DS. Also the transient behaviors of a-Si:H TFTs were calculated even if the values of the related parameters are not accurately specified.

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