• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.89-90
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• 2008

본 연구에서는 PECVD(Plasma Enhanced CVD) 에서 사용하는 유해 가스인 $SiH_4$ 대신에 유기 사일렌 반응 물질인 TEOS(Tetraethyl Orthosilicate, Si$(OC_2H_5)_4)$를 이용하여 상압 화학 기상 증착법 (Atmospheric Pressure CVD, APCVD)으로 실리콘 산화막을 증착하고 박막의 조성과 특성 및 화학적, 전기적 특성들을 살펴보았다. TEOS 반응원료를 이용한 CVD 공정에서 공정 온도를 낮추기 위한 방법으로 강력한 산화제인 오존을 이용하여 공정온도를 $400^{\circ}C$이하로 낮췄으며, 유리기판 상의 ELA(Excimer Laser Annealing)처리된 다결정 실리콘 기판에 트랜지스터 소자를 제작하고, 게이트 절연막으로의 전기적 특성을 살펴보았다.

• Polymer(Korea)
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• v.38 no.5
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• pp.573-579
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• 2014

The effect of synthesis conditions such as carbon nanotube (CNT), 2,2,2-trifluoroethylmethacrylate (3FMA), and composition of organic-inorganic material in ozone resistance and surface characteristics of ultraviolet cured organic-inorganic hybrid coating film has been investigated. Coating solution was prepared using tetraethoxysilane (TEOS), silane coupling agent methacryloyloxypropyltrimethoxysilane (MPTMS), 3FMA, various organic materials with acrylate group, and CNT, then bar-coated on substrates using applicator, and densified by UV-curing. It was found that ozone resistance and adhesion of the coating film were strongly dependent upon contents of TEOS, 3FMA, and CNT. Especially, ozone resistance, adhesion, and surface hardness of coating film with CNT were improved, relatively. Ozone resistance of coating film with a high TEOS content was increased, but adhesion was decreased. In addition, it was also found that ozone resistance of coating film was increased with contents of 3FMA. On the other hand, surface hardness was decreased with increase of 3FMA.

• Korean Chemical Engineering Research
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• v.50 no.3
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• pp.421-426
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• 2012

The effect of synthesis conditions such as various organic material and composition of organic-inorganic material in ozone resistance and surface characteristic of ultraviolet cured organic-inorganic hybrid coating film has been investigated. Organic-inorganic hybrid coating solution was prepared using tetraethoxysilane (TEOS), silane coupling agent methacryloyloxypropyltrimethoxysilane (MPTMS), 2,2,2-trifluoroethylmethacrylate, and various organic materials with acrylate group, bar-coated on substrates using applicator and densified by UV-curing. It was found that ozone resistance and surface hardness of the coating film was increased with contents of TEOS. It was also found that ozone resistance of coating film was increased with contents of 2,2,2-trifluoroethylmethacrylate. On the other hand, surface hardness was decreased with increase of 2,2,2-trifluoroethylmethacrylate. In addition, Surface hardness of coating film was increased with the addition of aliphatic urethane acrylate. It was also found that the transmittance of coating films was not influenced by content of TEOS and 2,2,2-trifluoroethylmethacrylate. In addition, the coating film exhibited high transmittance of above 90%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.319-320
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• 2008

본 연구에서는 대기압하에서 고품질의 산화막 증착을 목적으로 TEOS(Tetraethyl Orthosilicate)를 이용하여 APCVD법(Atmospheric Pressure CVD)으로 실리콘 산화막을 증착하고 하였으며, 특성 비교를 위하여 ICP-CVD를 이용하여 $SiH_4$ 와 $N_2O$ source gas를 이용하여 산화막을 증착하였다. 트랜지스터 제작후 Semiconductor measurement system을 이용하여 TFT의 전기적 특성을 측정 하였으며, 결과적으로 유기 사일렌을 사용한 경우 보다 우수한 전기적 특성을 확인할 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.334-338
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• 2006

Poly silicon TFT requires high quality dielectric film; conventional method of growing silicon dioxide needs highly hazardous chemicals such as silane. We have grown high quality dielectric film of silicon dioxide using non-hazardous chemical such as TFOS and ozone as reaction gases by APCVD. The films grown were characterized through C-V curves of MOS structures. Conventional APCVD requires high temperature processing where as in the process of current study, we developed a low temperature process. Interface trap density was substantially decreased in the silicon surface coated with the silicon dioxide film after annealing in nitrogen ambient. The interface with such low trap density could be used for poly silicon TFT fabrication with cheaper cost and potentially less hazards.