• Journal of Adhesion and Interface
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• v.7 no.4
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• pp.32-38
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• 2006

A series of organic-inorganic hybrids, PCL/EP/$SiO_2$, involving epoxy resin and triethoxysilane-terminated polycaprolactone elastomer (PCL-TESi) were prepared via polymerization of diglycidyl ether of bisphenol A (DGEBA) with amine curing agent KB-2 and sol-gel process of PCL-TESi. The curing reactions were started from the initially homogeneous mixture of DGEBA, KB-2 and the PCL-TESi. The organicinorganic hybrids containing up to 4.95% (wt) of $SiO_2$ were obtained and characterized by FT-IR, transmission electron microscopy (TEM), differential scanning calorimetry (DSC) and thermogravimetry analysis (TGA). It was experimentally shown that the swelling property in toluene, morphologies and thermal properties of the resulting hybrids were quite dependent on the contents of $SiO_2$. The crosslink network density decreases with increasing of the PCL-TESi. And in TEM, the phase separated morphology of these hybrids was found, which resulted from the coagulation of Si-O-Si networks resulting from $-Si(OC_2H_5)_3$ of PCL-TESi self-curing by hydrolytic silanol condensation, with the advancement of the curing reaction in the modified epoxy resin systems. Meanwhile, the change of the $SiO_2$ content made the morphologies changed from aggregated particles of Si-O-Si in the hybrid to nanocluster of interconnected Si-O-Si particles, then to aggregated Si-O-Si dispersing in the continuous cured epoxy phase again, and last to co-continuous interpenetrating network. The glass transition behavior of the hybrid material was cooperative motion of large chain segments, which were hindered by the inorganic Si-O-Si network. And in TG analysis, the characteristic temperature at 5% of weight loss was evidently increased from $120.5^{\circ}C$ of pure cured epoxy to $277.6^{\circ}C$ of 3.84% (wt) of $SiO_2$ modified epoxy due to the existence of Si-O-Si when PCL-TESi was added in the hybrid.

• Korean Journal of Materials Research
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• v.22 no.1
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• pp.42-45
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• 2012

The mechanical behavior and microstructural evolution during high temperature tensile deformation of recrystallized Ni3Al polycrystals doped with boron were investigated as functions of initial grain size, tensile strain rate and temperature. In order to obtain more precise information on the deformation mechanism, tensile specimens were rapidly quenched immediately after deformation at a cooling rate of more than $2000Ks^{-1}$, and were then observed by transmission electron microscopy (TEM). Mechanical tests in the range of 923 K to 1012 K were carried out in a vacuum of less than $3{\times}10^{-4}$ Pa using an Instron-type machine with various but constant cross head speeds corresponding to the initial strain rates from $1.0{\times}10^{-4}$ to $3.1{\times}10^{-5}s^{-1}$. After heating to deformation temperature, the specimen was kept for more than 1.8 ks before testing. The following results were obtained: (1) Flow behavior was affected by initial strain size; with decreasing initial grain size, the level of a stress peak in the true stress-true strain curve decreased, the steady state region was enlarged and elongation increased. (2) On the basis of TEM observation of rapidly quenched specimens, it was confirmed that dynamic recrystallization certainly occurred on deformation of fine-grained ($3.3{\mu}m$) and intermediate-grained ($5.0{\mu}m$) specimens at an initial strain rate of $3.1{\times}10^{-5}s^{-1}$ and at 973 K. (3) There were some dislocation-free grains among the new recrystallized grains. The obtained results suggest that both dynamic recrystallization and grain boundary sliding are operative during high temperature deformation.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.162-166
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• 2000

High quality $Si_3N_4$ metal-insulator-metal (MIM) capacitors were realized by plasma enhanced chemical vapor deposition (PECVD). Titanium nitride (TiN) adapted as a diffusion barrier reduced the interfacial reaction between $Si_3N_4$ dielectric layer and aluminum metal electrode showing neither hillock nor observable precipitate along the interface. The capacitance and the current-voltage characteristics of the MIM capacitors showed that the minimum thickness of $Si_3N_4$ layer should be limited to 500 $\AA$ under the present process, below which most of the capacitors were electrically shorted resulting in the devastation of on-wafer yield. According to the transmission electron microscopy (TEM) on the cross-sectional microstructure of the capacitors, the dielectric breakdown was caused by slit-like voids formed at the interface between TiN and $Si_3N_4$ layers when the thickness of $Si_3N_4$ layer was less than 500 $\AA$. Based on the calculation of thermally-induced residual stress, the formation of voids was understood from the mechanistic point of view.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.280-286
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• 2006

A distributed Bragg reflector (DBR) for the application of $1.3{\mu}m$ vertical cavity surface emitting laser (VCSEL) has grown by digital-alloy AlGaAs layer using the molecular beam epitaxy (MBE) method. The measured reflection spectra of the digital-alloy AlGaAs/GaAs DBR have uniformity in 0.35% over the 1/4 of 3-inch wafer. Furthermore, the TEM image showed that the composition and the thickness of the digital-alloy AlGaAs layer in AlGaAs/GaAs DBR was not affected by the temperature distribution over the wafer whole surface. Therefore, the digital-alloy AlGaAs/GaAs DBR can be used to get higher yield of VCSEL with the active medium of InAs quantum dots whose gain is inhomogeneously broadened.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.37 no.2
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• pp.68-74
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• 2000

The problem of electromagnetic coupling through a narrow slit in a parallel-plate waveguide(PPW) covered by a dielectric slab with a conducting strip on the slab is considered for the case that the TEM wave is incident in the PPW. Coupled integral equations for the tangential electric field in the slit and the induced current over the strip are derived and solved numerically by use of the method of moments. In order to show the effect of the conducting strip on the coupling, some numerical results for the reflected and transmitted powers in the guide, the coupled power through the slit, the equivalent slit admittance, and radiation pattern are presented. From the results, it is observed that the maximum available power coupled through the slit exterior to the PPW amounts upto 50% of the incident power in the PPW.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.83-87
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• 2003

$(Nd/Y)_{1.8}Ba_{}2.4Cu_{3.4}O_{7-x}$high $T_c$ superconductor was directionally grown by floating Bone melt growth process with a large temperature gradient in air. Cylindrical green rods of (Nd/Y)1.8 oxides were fabricated by cold isostatic pressing (CIP) method using rubber mold. Microstructures were observed by SEM and TEM and superconducting properties were measured by a SQUID magnetometer. Nonsuperconducting $(Nd/Y)_2BaCuO_5$ inclusions were uniformly distributed within the superconducting $(Nd/Y)Ba_2Cu_3O_x$ matrix. The directionally melt-textured (Nd/Y) 1.8 superconductor showed an onset Tc $\geq$ 90 K and a sharp superconducting transition.

• Journal of the Korean Magnetics Society
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• v.1 no.2
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• pp.31-36
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• 1991

Structural and compositional heterogeneities of sputter deposited, amorphous $Co_{87}Zr_{4}NB_{9}$ thin films were investigated using TEM and EDS with windowless detector. The films deposited with substrate bias and annealed in rotating magnetc field showed two amorphous phases of Co-rich region and (ZrNb)oxide-rich region, and revealed 'ultra-soft' magnetic properties. Revesible bias-responses and overdamped frequency responses, along with small Hc, Hk and Mr/Ms ratio, give the possibility of ultra-soft magnetic behavior fo CoZrNb thin films. We proposed the vortex type magnetization distribution in remanent state which was correlated with the thin film heterogeneity. Then, the ultra-soft characteristics of the compositionally heterogeneous films were explained by the spin vortices that minimized the total magnetostatic and exchange coupling energies.

• Journal of the Korean Magnetics Society
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• v.13 no.2
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• pp.59-63
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• 2003

Superparamagnetic properties of self-aggregated cobalt nanoparticles in the perfluorinated ion-exchange polymeric membrane (MF-4SK) prepared by ion-exchange and recovery methods were investigated by transmission electron microscopy (TEM) and superconducting quantum interference device (SQUID) magnetometer at various temperatures. Our experimental results show that cobalt nanoparticles in MF-4SK for the concentration of $7.8{\times}10^{19}$ atoms per 1 g of polymer membrane exhibit superparamagnetic properties above the average blocking temperature ($T_{B}$), which is determined to be around 185 K at applied field of 500 Oe. The average particle radius of 4.0 nm achieved from Langevin function fit is in good agreement with TEM observations. This experimental evidence suggests that cobalt nanoparticles in polymer film obey a single domain theory. The results are discussed in the light of current theory for the superparamagnetic behavior of magnetic nanoparticles.

• Journal of the Korean Magnetics Society
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• v.14 no.5
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• pp.163-168
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• 2004

We prepared ultra thin film structure of Si(100)/ $SiO_2$(200 nm)/Ta(5 nm)/Ni$_{80}$Fe$_{20/(l～15 nm)}$Ta(5 nm) using an inductively coupled plasma(ICP) helicon sputter. Magnetic properties and cross-sectional microstructures were investigated with a superconduction quantum interference device(SQUID) and a transmission electron microscope(TEM), respectively. We report that NiFe films of sub-3 nm thickness show the B$_{bulk}$ = 0 and B$_{surf}$=-3 ${\times}$ 10$^{-7}$(J/$m^2$). Moreover, Curie temperature may be lowered by decreasing thickness. Coercivity become larger as temperature decreased with 0.5 nm - thick Ta/NiFe interface intermixing. Our result implies that effective magnetic properties of magnetoelastic anisotropy, saturation magnetization, and coercivity may change abruptly in nano-thick films. Thus we should consider those abrupt changes in designing nano-devices such as MRAM applications.

• Korean Journal of Materials Research
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• v.2 no.6
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• pp.417-427
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• 1992

Silicon ion implantation was performed to LPCVD amorphous Si films and the low temperature annealing process followed with various conditions to find the optimal physical properties by studying recrystallization behavior. The uniformity of the recrystallized films was inspected by optical microscopy and for this purpose, new KOH: (IPA) : $H_2$O: $K_2$C${r_2}{O_7}$, etchant was developed. XRD and TEM results showed that the crystallites were grown as a form of dendrite with (111) preferred orientation, and the grain size was increased with dose concentration. The maximum grain size was obtained when the 3${\times}{10^{15}}$c$m^2$ implanted amorphous Si film was recrystallized at 55 $0^{\circ}C$for more than 40 hrs and at this condition the grain size was 3.2${\mu}$m.