• Journal of the Mineralogical Society of Korea
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• v.13 no.3
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• pp.115-120
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• 2000

Oxidation of pyrite has caused a serious environmental problem such as the acidification of soil and surface water. The mineralogical change of acid sulfate weathering of hydrothermally altered andesite which contained 11.8% of pyrite and was exposed in atmosphere by lay out works for a residential area and a golf course was studied using X-ray diffraction (XRD) and electronmicroscopes. Ferrihydrite, jarosite, and an unidentified water soluble phase were observed as weathering products of the andesite. Under electronmicroscopes, showed aggregate of platy microcrystals; jarosite was platy morphology: water soluble Phase was columnar. Morphology of fresh Pyrite in the andesite changed from pyritrohedron to cubic in its frequency with increasing its particle size. The drainage water was acidic (pH 3.5) and in an equilibrium state with both ferrihydrite and jarosite.

• Journal of Microbiology
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• v.40 no.3
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• pp.199-204
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• 2002

A microsporidium, from cabbage white bntteflies, Pieris rapae, collected in Korea, was purified and characterized according to its gene structure, spore morphology and pathogenicity. From the observation of the isolate by SEM and TEM, the endospores, exospores and nuclei, about 12 polar filament coils of the polar tube and posterior vacuoles were all identified. The nucleotide sequence was determined for a portion of genomic DNA which spans the V4 variable region of the small subunit rRNA gene. Comparison with the GenBank database for 15 other microsporidia species suggests that this isolate is most closely related to Nosema species. The pathogenicity against cabbage white butterflies was quantified by inoculating variable doses of spores to the second instar larvae. Peroral inoculation at a dosage of 10$\^$8/ spores/ml resulted in the death of all larvae prior to adult eclosion, but at lower spore dosages of 10$\^$4/-10$\^$5/ spores/ml, many adults successfully emerged. The median lethal dose (LD$\_$50/) was deter-mined to be 4.6$\times$10$\^$6/ spores/ml and the isolate also transmitted transovarially to the progeny eggs at a frequency of 92%.

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.900-906
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• 2001

We prepared tunnel magnetoresistance(TMR) devices of Ta($50\AA$)/NiFe($50\AA$)/IrMn(150$\AA$)/CoFe($50\AA$)/Al ($13\AA$)-O/CoFe($40\AA$)/NiFe($400\AA$)/Ta(50$\AA$) structure which has 100$\times$100 $\mu\textrm{m}^2$ junction area on $2.5\Times2.5 cm^{2}$ $Si/SiO_2$ ($1000\AA$) substrates by a inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using a ICP plasma oxidation method by varying oxidation time from 80 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We used a high resolution transmission electron microscope(HRTEM) to investigate microstructural evolution of insulating layer. The average resistance of devices increased from 16.38 $\Omega$ to 1018 $\Omega$ while MR ratio decreased from 30.31 %(25.18 %) to 15.01 %(14.97 %) as oxidation time increased from 80 sec to 360 sec. The values in brackets are calculated values considering geometry effect. By comparing cross-sectional TEM images of 220 sec and 360 sec-oxidation time, we found that insulating layer of 360 sec-oxidized was 30 % and 40% greater than that of 150 sec-oxidized in thickness and thickness variation, respectively. Therefore, we assumed that increase of thickness variation with oxidation time is major reason of MR decrease. The resistance of 80 sec-oxidized specimen was 160 k$\Omega$$\mu\textrm{m}^2$ which is appropriate for industrial needs of magnetic random access memory(MRAM) application.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.329-334
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• 2001

Microstructures of barrier-type oxide layers on aluminum was studied by XRD, TEM and RBS. Fer formation of oxide layer. aluminum was anodized in a boric acid solution. The thickness of the oxide film subjected to applied voltage increased linearly at ratio of 1.54nm/V. For oxide layer anodized at 300V, amorphous structure of oxide layer was not transformed after heat treatment at 50$0^{\circ}C$ , while for oxide layers anodized at higher voltages the amorphous structure crystallized into a ${\gamma}$-alumina without any heat treatment. It was also found that the amorphous structure of oxide layer formed at 100V transformed into crystalline structure by electron irradiation. The structure was identified as ${\gamma}$-alumina.

• Korean Journal of Materials Research
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• v.12 no.12
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• pp.918-923
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• 2002

In this work, CdTe films were deposited on CdS/ITO/glass substrate by a close spaced sublimation (CSS) method. A $Cu_2$Te layer was deposited on the CdTe film by evaporating $Cu_2$Te powder. Then the samples were annealed for p+ ohmic contact. TEM and XRD analysis showed that $CdTe/Cu_2$Te interface exhibited different forms with various annealing temperature. A good p+ ohmic contact was achieved when the annealing temperature was between $180^{\circ}C$ to $200^{\circ}C$. Best cell efficiency of 12.34% was obtained when post annealing temperature was $200^{\circ}C$ for 5 min. Thermal stress test of the CdS/CdTe cells with carbon back contact showed that the $Cu_2$Te contact was stable at $50^{\circ}C$ in $N_2$ and was slowly degraded at $100^{\circ}C$ in $N_2$. In comparison to the conventional carbon contact, the $Cu_2$Te contact showed a better thermal stability.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.683-690
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• 2003

The high strength low alloy(HSLA) steels microalloyed with Nb, Ti and V have been widely used as the automobile parts to decrease weight of vehicles. The effects of process conditions are investigated in the aspects of the precipitation behavior and the mechanical properties of HSLA steel microalloyed with Nb and Ti using TEM, SANS and mechanical testing. When Ti was added to a 0.07C-1.7Mn steel which was coiled at $500^{\circ}C$, the specimen revealed the property of higher tensile strength of 853.1 MPa and the stretch-flangeability of 60%. The stretch-flangeability was increased up to 97.8% for coiling temperature above $700^{\circ}C$. The precipitation hardening cannot be achieved in the 0.045C-1.65Mn steel which was the lower density of fine precipitates. However, the 0.07C-1.7Mn steels containing Nb and/or Ti which was coiled at X$/^{\circ}C$ have a high precipitates density of $2${\times}$10^{ 5}$/$\mu$㎥. The high strength of these steels was attributed to the precipitation hardening caused by a large volume froction of (Ti, Nb)C precipitates with a size below 5 nm in ferrite matrix.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.274-279
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• 1998

Optimum Cu and Mn contents in 0.05wt%C-Cu bearing hot rolled steel sheets were investigated by vickers hardness measurement, tensile test and transmission electron microscopy. It was determined that the optimum Cu and Mn contents were 1.2wt% and 0.75-0.85wt% respectively. It was confirmed by TEM observation that the coarse recipitates were fcc $\varepsilon$-Cu in 0.05%C-1.2%Cu-0.75%Mn-O.O4%Nb steel sheets. The Cu-bearing steel sheets having 780MPa of tensile strength could be fabricated by 10% pre-strain and aging treatment at $550^{\circ}C$ for 30min.

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.879-888
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• 2001

The effects of final annealing temperature on the microstructure and creep characteristics were investigated for the Zr-lNb-0.2X (X=0, Mo, Cu) and Zr-lNb- 1Sn-0.3Fe-0.1X (X=0, Mo, Cu) alloys. The microstructures were observed by using TEM/EDS, and grain size and distributions of precipitates were analyzed using a image analyzer. The creep test was performed at $400^{\circ}C$ under applied stress of 150 MPa for 10 days. The $\beta$-Zr was observed at annealing temperature above $600^{\circ}C$. In the temperature above$ 600^{\circ}C$, the grain sizes of both alloy systems appeared to be increased with increasing the final annealing temperature. The creep strengths of Zr-1Nb-1Sn-0.3Fe-0.1X alloys were higher than those of Zr-1Nb-0.2X ones due to the effect of solid solution hardening by Sn in Zr-lNb-lSn-0.3Fe-0.1X alloy system. Also, Mo addition showed the strong effect of precipitate hardening in both alloy systems. The creep strength rapidly decreased with increasing the annealing temperature up to $600^{\circ}C$. However, a superior creep resistance was obtained in the sample that annealed to have a second phase of $\beta$-Zr. It was considered that the appearance of $\beta$-Zr would play an important role in the strengthening mechanism of creep deformation.

• KSBB Journal
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• v.19 no.3
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• pp.178-186
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• 2004

The aim of this study was to investigate the skin-whitening effect of okyong-san and to develop new drug delivery carrier The extracts of okyong-san were found to have the whitening effect and Eudragit$\^$ⓡ/ L 100-55 (EUD) coated solid lipid nanoparticle (E-SLN) was prepared by solvent evaporation method and melt dispersion technique. As a result, E-SLN have a 144-170 nm of particle size, spherical shape, and 33-41% encapsulation efficiency, After release test in vitro, release profile of E-SLN depended on pH and temperature. Lastly, closed patch test and skin-whitening test was peformed clinically. In conclusion, test sample had non-stimulation and high % whiteness. The results suggest that okyong-san and E-SLN is useful as cosmeceuticals for whitening cosmetics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.916-923
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• 2004

In this paper, the strained Si$_{0.9}$Ge$_{0.1}$ epitaxial layers grown by a reduced pressure chemical vapor deposition (RPCVD) on Si (100) were characterized by Rutherford backscattering spectrometery (RBS) for the fabrication of an SiGe heterojunction bipolar transistor(HBT). RBS spectra of the ${Si}_0.9{Ge}_0.1$epitaxial layers grown on the Si substrates which were implanted with the phosphorus (P) ion and annealed at a temperature between $850^{\circ}C$ - $1000^{\circ}C$ for 30min were analyzed to investigate the post thermal annealing effect on the grown${Si}_0.9{Ge}_0.1$epitaxial layer quality. Although a damage of the substrates by P ion-implantation might be cause of the increase of RBS yield ratios, but any defects such as dislocation or stacking fault in the grown ${Si}_0.9{Ge}_0.1$ epitaxial layer were not found in transmission electron microscope (TEM) photographs. The post high temperature rapid thermal annealing (RTA) effects on the crystalline quality of the ${Si}_0.9{Ge}_0.1$ epitaxial layers were also analyzed by RBS. The changes in the RBS yield ratios were negligible for RTA a temperature between $900^{\circ}C$ - $1000^{\circ}C$for 20 sec, or $950^{\circ}C$for 20 sec - 60 sec. A SiGe HBT array shows a good Gummel characteristics with post RTA at $950^{\circ}C$ for 20 sec.sec.sec.