• Proceedings of the Membrane Society of Korea Conference
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• 1997.04b
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• pp.62-63
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• 1997

Polyimide는 내열성과 기계적, 화학적 특성이 다른 고분자막에 비해 뛰어나며 선택도 또한 비교적 높기 때문에($\alpha$=3~7) 최근 많은 연구의 대상이 되고 있다. 그러나 소위 trade-off현상으로 알려진 바와 같이 선택도가 높은 고분자 재료는 투과계수가 낮은 단점을 가지고 있어서 (P${_O_2}$=0.1~122) 실용적인 막으로 사용되기 위해서는 이를 개선하는 연구가 필요하다. 본 연구에서는 polyimide 중 투과계수가 가장 큰 것으로 보고된 6FDA-p-TeMPD 막을 제조하여 여러 방법으로 UV처리를 하고 UV처리의 변수에 따른 막의 투과특성을 조사하여 가장 뛰어난 투과특성을 나타내는 최적조건을 찾고자 하였다.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.395-407
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• 2021

The effect of the specifications of a silicon-on-insulator vertical slot optical waveguide on the sensitivity of homogeneous and surface sensing configurations for TE and TM polarization, respectively, was systematically analyzed using numerical software. The specifications were optimized based on the confinement factor and transmission power of the TE-guided mode distributed in the slot. The waveguide sensitivities of homogeneous and surface sensing were calculated according to the specifications of the optimized slot optical waveguide.

• YAKHAK HOEJI
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• v.58 no.2
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• pp.141-149
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• 2014

Background: Oriental lifestyle for treating diseases has been developed and well-accepted for a long time among Koreans. Sasang Constitution theory, originated from Korean traditional medicine, suggests that medication treatment should be differentiated by each patient's body classification (So-yang [SY], So-eum [SE], Tae-yang [TY], and Tae-eum [TE]), in contrary to western medicine's theory that medication should be applied equally by disease indication without such classification. However, the pharmacotherapeutic outcomes of these theories have not been compared to date. In this study, we aimed to compare the two theories by evaluating blood pressure (BP), which is lowered as a therapeutic outcome, among hypertensive patients taking angiotensin II receptor blockers (ARBs) or calcium channel blockers (CCBs), two most commonly used antihypertensive classes in Korea. Methods: From April 2006 to June 2012, we retrospectively collected data on hypertensive patients with Sasang Constitution classification at Kyunghee University Hospital at Gangdong, one of the East-West collaborative medical centers in Korea. We collected information on age, gender, underlying diseases, antihypertensive drugs (ARB, CCB, ARB+CCB), and BP by reviewing the electronic medical records. We excluded patients with missing blood pressure at baseline or follow-up, or those who had a change in their antihypertensive drug class during follow-up. Results: We selected a total of 573 patients (SY: 165, SE: 158, TY: 0, TE: 250). Baseline BPs were on average 139.0/82.0 mmHg for SY, 137.8/78.5 mmHg for SE, and 138.7/79.2 mmHg for TE. In all three groups, CCBs were the most prescribed, followed by combination therapy with ARB+CCB, then ARBs. BP reduction after 1 month of initial medication was significantly different among the drug classes, but not in Sasang constitutional classification (ARB [SY: -12.4/-4.7, SE: -12.3/-2.5, TE: -8.6/-1.8], CCB [SY: -12.3/-5.4, SE: -13.0/-2.3, TE: -10.8/-6.0], ARB+CCB [SY: -15.6/-6.7, SE: -18.4/-8.1, TE: -20.2/-6.7], drug [$P{\leq}0.05$/P>0.05], constitutional type [P>0.05/P>0.05]). Conclusion: We observed significant differences in reduction of blood pressure by classes of drugs (ARB+CCB>CCB>ARB) but not by Sasang constitutional classification. Therefore, current approach of antihypertensive pharmacotherapy assisted by Western medicine is appropriate for treatment of hypertension. However, further larger scale or prospective studies are required in order to confirm these results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.982-987
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• 2011

In this study, $Ge_8Se_{(2+x)}Te_{(6-x)}$ thin film amorphous-to-crystalline phase-change rate was evaluated in using a nano-pulse scanner. The focused laser beam with a diameter <10 ${\mu}m$ was illuminated in the power (P) and pulse duration (t) ranges of 1-31 mW and 10-460 ns, respectively, with subsequent detection of the responsive signals reflected from the film surface. We also evaluated the material characteristics, such as optical absorption and energy gap, crystalline phases, and sheet resistance of as-deposited and annealed films. The result of experiments showed that the thermal stability of the Ge-Se-Te film is largely improved by adding Se.

• Journal of Powder Materials
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• v.21 no.2
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• pp.137-141
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• 2014

In this study, we report the sintering behavior and properties of a $Ge_2Sb_2Te_5$ alloy powders for use as a sputtering target by spark plasma sintering. The effect of various sintering parameters, such as pressure, temperature and time, on the density and hardness of the target has been investigated in detail. Structural characterization was performed by scanning electron microscopy and X-ray diffraction. Hardness and thermal properties were measured by differential scanning calorimetry and micro-vickers hardness tester. The density and hardness of the sintered $Ge_2Sb_2Te_5$ materials were 5.8976~6.3687 $g/cm^3$ and 32~75 Hv, respectively.

• Transactions on Electrical and Electronic Materials
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• v.18 no.5
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• pp.253-256
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• 2017

A thin Te interlayer was applied to a Ni/n-InGaAs contact to reduce the contact resistance between Ni-InGaAs and n-InGaAs. A 5-nm-thick Te layer was first deposited on a Si-doped n-type $In_{0.53}Ga_{0.47}As$ layer, followed by in situ deposition of a 30-nm-thick Ni film. After the formation of the Ni-InGaAs alloy by rapid thermal annealing at $300^{\circ}C$ for 30 s, the extracted specific contact resistivity (${\rho}_c$) reduced by more than one order of magnitude from $2.86{\times}10^{-4}{\Omega}{\cdot}cm^2$ to $8.98{\times}10^{-6}{\Omega}{\cdot}cm^2$ than that of the reference sample. A thinner Ni-InGaAs alloy layer with a better morphology was obtained by the introduction of the Te layer. The improved interface morphology and the graded Ni-InGaAs layer formed at the interface were believed to be responsible for ${\rho}_c$ reduction.

• The Journal of Korean Medicine Ophthalmology and Otolaryngology and Dermatology
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• v.11 no.1
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• pp.180-196
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• 1998

A Literatur Review of Physical and Breathing Exercises for Ear Health, the results were as follows. 1. The most common using way is rubbing your ears and auricle with warm palms. 2. To stimulate inner acoustic meatus, obstruct external acoustic meatus for a short time by the palm or fingers and then to stimulate it by the sudden opening. 3. This method is a common way to press aurical or orifice of external acoustic meatus for example, TE21(耳門), TE20(角孫), GB2(聽會), TE19(노息), TE18(계脈), GB11(竅陰), TE17(예風) etc. 4. The best time to pratice is early in the morning or before go to bed, but a litter difference by the writer's opinion, so there is not consistency. 5. Since tinnitus and hardness of hearing is related to the who1e body, it is known that you can relax your whole body by pressing the acupuncture points located in the head of occipital region or by stretching the upper half of the body. 6. There is method that obstruct your ears with palms and 3rd finger on your occipital region and splash by the 2th fingers.(sound the celestial drum)

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.345-345
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• 2012

최근 의료산업에서는 고해상도 및 동영상 구현이 가능한 직접 방식의 X-선 검측센서에서 X-ray 흡수효율이 좋은 반도체 센서(CdTe, CdZnTe 등)와 성숙된 기술, 집적효율이 뛰어난 CMOS 공정을 이용한 제품을 출시하여 대면적화 및 고집적화가 가능하게 되어 응용분야가 점차 확대되고 있는 추세이다. 하지만 이 역시 고 성능의 X-선 동영상 구현을 위해서는 고 해상도 문제, 검출효율 문제, 대면적화의 어려움이 있다. 기존의 X-선 광 도전층의 증착은 증착 속도와 박막 품질에서 우수한 Evaporation 법이 사용되고 있다. 한편, 대면적에 균일한 박막형성이 가능하기 때문에 양산성에서 우월성을 가지는 sputtering법의 경우, 밀도가 높은 소결체 타겟의 제조가 힘들뿐만 아니라 증착 속도가 낮아 장시간 증착 시 낮은 소결밀도로 인한 타겟 Particle 영향으로 인해서 대 면적에 고품질의 박막을 형성하기가 어렵다. 하지만 최근 소결체 타겟 제조기술 발달과 함께, 대면적화와 장시간 증착에 대한 어려움이 해결되고 있어 sputtering 법을 이용한 고품질 박막 제조 기술의 연구가 시급한 실정이다. 본 연구에서는 $50{\times}50$ mm 크기의 non-alkali 유리기판(Corning E2000) 위에 Evaporation과 RF magnetron sputtering을 사용하여 다양한 기판온도 (RT, 100, 200, 300, $350^{\circ}C$)에서 $1{\mu}m$의 두께로 CdTe 박막을 증착하였다. RF magnetron sputtering의 경우 CdTe 단일 타겟(50：50 at%)을 사용하였으며 Base pressure는 약 $5{\times}10^{-6}$ Torr 이하까지 배기하였고, Working pressure는 약 $7.5{\times}10^{-3}$ Torr에서 증착하였다. 시편과 기판 사이의 거리는 70 mm이며 RF 파워는 150 W로 유지하였다. CdTe 박막의 미세구조는 X-ray diffraction (XRD, BRUKER GADDS) 및 Field Emission Scanning Electron Microscopy (FE-SEM, Hitachi)를 사용하여 측정하였다. 또한, 조건별 박막의 조성은 Energy Dispersive X-ray Spectroscopy (EDS, Horiba, 7395-H)을 사용하여 평가하였다. X-선 동영상 장치의 구현을 위해서는 CdTe 다결정 박막의 높은 흡수효율, 전하수집효율 및 SNR (Signal to Noise Ratio) 등의 물성이 요구된다. 이러한 물성을 나타내기 위해서는 CdTe 박막의 높은 결정성이 중요하다. Evaporation과 RF magnetron sputtering로 제작된 CdTe 박막은 공정 온도가 증가함에 따라 기판상에 도달하는 스퍼터 원자의 에너지 증가로 인해서 결정립이 성장한 것을 확인할 수 있었다. 따라서 CdTe 박막이 직접변환방식 고감도 X-ray 검출기 광도 전층 역할을 수행할 수 있을 것으로 기대된다.

• Journal of Korean Society on Water Environment
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• v.24 no.6
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• pp.758-766
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• 2008

To evaluate homologue patterns and removal efficiency before and after water treatment, the concentrations of dibenzo-p-dioxins (PCDDs), polychlorinated dibenzofurans (PCDFs) and coplanar polychlorinated biphenyls (Co-PCBs) were determined in 122 samples from 42 drinking water treatment plants throughout Japan over a two year period. The mean concentrations and toxic equivalent (TEQ) values of dioxins in raw and treated waters were 60.24 pg/L (0.14 pg-WHO-TEQ/L) and 4.15 pg/L (0.016 pg-WHO-TEQ/L), respectively. The dioxins contribution ratio of drinking water in relation to dioxins tolerable daily intake (TDI, 4 pg-TEQ/kg/day) was 0.016%. The mean TEQ removal rate of dioxins by drinking water treatment was over 88%. However, the mean removal rate of 2, 3, 7, 8-TeCDF (tetrachlorodibenzofuran) by water treatment in the 122 samples was minus 17%. Therefore, to identify which process affected the level of 2, 3, 7, 8-TeCDF, the removal efficiencies at both the advanced and conventional water treatment plants were investigated. For the TEQ removal rate across the processes, the dioxin congeners, TeCDF and non-ortho-PCBs remarkably indicated minus values after chlorination in both the advanced and conventional water treatments plant. From this study, the level of 2, 3, 7, 8-TeCDF was found to be increased as a result of chlorination.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.158-158
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• 2003

수평 전기로에서 CuGaTe2 다결정을 합성하여 HWE 방법으로 CuGaTe2 단결정 박막을 반절연성 GaAs(100) 위에 성장하였다. CuGaTe2 단결정 박막은 증발원과 기판의 온도를 각각 67$0^{\circ}C$, 41$0^{\circ}C$로 성장하였다. 이때 단결정 박막의 결정성이 10K에서 측정한 광발광 스펙트럼은 954.5nm (1.2989eV) 근처에서 exciton emission 스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)도 139arcsec로 가장 작게 측정되어 최적 성장 조건임을 알 수 있었다. Hall 효과는 van der Paw방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 8.72$\times$$10^{23}$개/㎥, 3.42$\times$$10^{-2}$$m^2$/V.s였다. 상온에서 CuGaTe2 단결정 박막의 광흡수 특성으로부터 에너지 띠간격이 1.22 eV였다 Band edge에 해당하는 광전도도peak의 온도 의존성은 Varshni 관계식으로 설명되었으며, Varshni 관계식의 상수값은 Eg(0) = 1.3982 eV, $\alpha$= 4.27$\times$$10^{-4}$ eV/K, $\beta$= 265.5 K로 주어졌다. CuGaTe2 단결정 박막의 광전류 단파장대 봉우리들로부터 10K에서 측정된 $\Delta$cr (crystal Field splitting)은 0.0791eV, $\Delta$s.o (spin orbit coupling)는 0.2463eV였다. 10K에서 광발광 봉우리의 919.8nm (1.3479eV)는 free exciton(Ex), 954.5nm (1.2989eV)는 donor-bound exciton 인 I2(DO,X)와 959.5nm (1.2921eV)는 acceptor-bound exciton 인 I1(AO,X) 이고, 964.6nm(1.2853eV)는 donor-acceptor pair(DAP) 발광, 1341.9nm (0.9239eV)는 self activated(SA)에 기인하는 광발광 봉우리로 고찰되었다.