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http://dx.doi.org/10.4313/JKEM.2011.24.12.982

Phase Change Characteristics of Ge-Se-Te Thin Film for PRAM  

Shin, Jae-Ho (Department of Advanced Chemicals & Engineering, Chonnam National University)
Kim, Byung-Cheul (Department of Electronic Engineering, Gyeongnam National University of Science and Technology)
Yeo, Jong-Bin (School of Applied Chemical Engineering, Research Institute of Catalysis, Chonnam National University)
Lee, Hyun-Yong (School of Applied Chemical Engineering, Research Institute of Catalysis, Chonnam National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.12, 2011 , pp. 982-987 More about this Journal
Abstract
In this study, $Ge_8Se_{(2+x)}Te_{(6-x)}$ thin film amorphous-to-crystalline phase-change rate was evaluated in using a nano-pulse scanner. The focused laser beam with a diameter <10 ${\mu}m$ was illuminated in the power (P) and pulse duration (t) ranges of 1-31 mW and 10-460 ns, respectively, with subsequent detection of the responsive signals reflected from the film surface. We also evaluated the material characteristics, such as optical absorption and energy gap, crystalline phases, and sheet resistance of as-deposited and annealed films. The result of experiments showed that the thermal stability of the Ge-Se-Te film is largely improved by adding Se.
Keywords
GeSeTe; Phase change memory; Crystallization; Nano-pulse scanner; PRAM;
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Times Cited By KSCI : 1  (Citation Analysis)
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