• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.59-61
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• 1989

The cell parameters of the sintered CdS/CdTe solar cells in which te CuCl$_2$was added in the carbon paste after the sintering of the CdS/CdTe composites an were annealed at 35$0^{\circ}C$ for 10 min in nitrogen are investigated. Voc and FF do not change significantly as the CuCl$_2$increasing up to 500 ppm, Jsc increases with futher increase in copper. The hole concentration, determined by C-V measurement, increases to $1.5\times$10$^{16}$ ㎤ as the copper increased to 25 ppm and then stays at about the same value with further increase in copper.

• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.352-356
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• 1995

Native oxide layer on MCT (HgCdTe) has been grown uniformly in H$\_$2/O$\_$2/ electrolyte through anodic oxidation method. It has been determined that anodic oxidation of HgCdTe in H$\_$2/O$\_$2/ electrolyte proceeds immediately with the input of constant currents without any induction time required for anodic oxideation in KOH electrolyte. Oxide layer with the resistivity of 2*10$\^$10/.ohm.cm and the refractive index of 2.1 suggested the possibility of well matching combination layer with ZnS for MCT MIS device. XPS results indicated that the major components of oxide layer grown in H202 solution is TeO$\_$2/ with the possibility of small amounts of CdTeO$\_$3/.

• 한국결정학회지
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• 제11권4호
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• pp.212-223
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• 2000

A stochiometric mix of CuInTe₂ polycrystal was prepared in a honizonatal furnace. To obtain the single crystal thin films, CuInTe₂ mixed crystal was deposited on throughly etched GaAs(100) by the HWE system. The source and substrate temperatures were 610℃ and 450℃ respectively, and the thickness of the deposited single crystal thin film was 2.4㎛. CuInTe₂ single crystal thin film was proved to be the optimal growth condition when the excition emission spectrum was the strongest at 1085.3 nm(1.1424 eV) of photoluminescence spectrum at 10 K, and also FWHM of Double Crystal X-ray Rocking Curve (DCRC) was the smallest, 129 arcsec. The Hall effect on this sample was measured by the method of Van der Pauw, and the carrier density and mobility dependent on temperature were 9.57x10/sup 22/ electron/㎥, 1.31x10/sup -2/㎡/V·s at 293 K, respectively. The ΔCr(Crystal field splitting) and the ΔSo (spin orbit coupling splitting( measured at f10K from the photocurrent peaks in the short wavelength of the CuInTe₂ single crystal thin film were about 0.1200 eV, 0.2833 eV respectively. From the PL spectra of CuInTe₂ single crystal thin film at 10 K, the free exciton (E/sub x/) was determined to be 1064.5 nm(1.1647 eV) and the donor-bound exciton(D/sup 0/, X) and acceptor-bound exciton (A/sup 0/, X) were determined to be 1085.3 nm(1.1424 eV) and 1096.8 nm(1.1304 eV0 respectively. And also, the donor-acciptor pair (DAP)P/sub 0/, DAP-replica P₁, DAP-replica P₂ and self-activated (SA) were determined to be 1131 nm (1.0962 eV), 1164 nm(1.0651 eV), 1191.1 nm(1.0340 eV) and 1618.1 nm (0.7662 eV), respectively.

• Bulletin of the Korean Chemical Society
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• 제22권5호
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• pp.499-502
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• 2001

Unexpectedly, the brightest row was known to represents the lowest lying Te atoms in the STM image of NbTe2. Projected density of states and crystal orbital overlap population show that the 5pz orbital of the lowest lying Te(2) atom doe s not interact with the 4d orbital of Nb strongly so that the 5pz band remains in the vicinity of the Fermi energy. Consequently the lowest lying Te(2) atoms contribute higher electron density near the Fermi energy which in turn exhibits brightest image in the STM experiments.

• 마이크로전자및패키징학회지
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• 제18권4호
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• pp.55-61
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• 2011

n형 $Bi_2(Te_{0.9}Se_{0.1})_3$ 분말을 기계적 합금화 공정으로 제조하고 텅스텐 분말을 분산시켜 $550^{\circ}C$에서 30분간 가압소결 후, 텅스텐 함량에 따른 열전특성을 분석하였다. 텅스텐 분말을 분산시키지 않은 $Bi_2(Te_{0.9}Se_{0.1})_3$ 가압소결체의 상온 출력인자는 $21.9{\times}10^{-4}$ $W/m-K^2$ 이었으며, 1 vol% 텅스텐 분말의 분산에 의해 상온 출력인자가 $30.5{\times}10^{-4}$ $W/m-K^2$로 증가하였다. 텅스텐 분말을 분산시키지 않은 $Bi_2(Te_{0.9}Se_{0.1})_3$ 가압소결체는 상온에서 0.52의 무차원 성능지수를 나타내었으며, 1 vol% 텅스텐 분말의 분산에 의해 무차원 성능지수가 0.95로 크게 향상되었다.

• 한국전기전자재료학회논문지
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• 제35권1호
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• pp.44-49
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• 2022

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge₂Sb₂Te₅/Ti/W-doped Ge₈Sb₂Te₁₁, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge₂Sb₂Te₅ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge₈Sb₂Te₁₁ film was about 1 order larger than that of Ge₂Sb₂Te₅ film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge₂Sb₂Te₅ (150 nm)/Ti (20 nm)/W-Ge₈Sb₂Te₁₁ (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

• 한국분말재료학회지
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• 제15권5호
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• pp.352-358
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• 2008

The present study focused on the synthesis of a bismuth-antimony-tellurium-based thermoelectric nanopowders using plasma arc discharge process. The chemical composition, phase structure, particle size of the synthesized powders under various synthesis conditions were analyzed using XRF, XRD and SEM. The powders as synthesized were sintered by the plasma activated sintering. The thermoelectric properties of sintered body were analyzed by measuring Seebeck coefficient, specific electric resistivity and thermal conductivity. The chemical composition of the synthesized Bi-Sb-Te-based powders approached that of the raw material with an increasing DC current of the are plasma. The synthesized Bi-Sb-Te-based powder consist of a mixed phase structure of the $Bi_{0.5}Sb_{1.5}Te_{3}$, $Bi_{2}Te_{3}$ and $Sb_{2}Te_{3}$ phases. This powder has homogeneous mixing state of two different particles in an average particle size; about 100nm and about 500nm. The figure of merit of the sintered body of the synthesized 18.75 wt.%Bi-24.68 wt.%Sb-56.57 wt.%Te nanopowder showed higher value than one of the sintered body of the mechanically milled 12.64 wt.%Bi-29.47 wt.%Sb-57.89 wt.%Te powder.

• 마이크로전자및패키징학회지
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• 제7권4호
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• pp.1-5
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• 2000

열전반도체 ($Pb_{1-x}Sn_{x}$)Te를 AC통전 가압법으로 제조하여 그물성에 대해서 연구하였다. 균질성 향상과 구성 성분의 휘발방지에 유효한 진동분쇄공정으로 기계적 합금화를 시켰다. Sn 함량이 증가함에 따라 합금화에 요구되는 기계적 합금화 시간이 증가되었다. AC 통전 hot press법으로 873-923 K에서 1~4분간 150 kgf/$\textrm{cm}^2$의 압력으로 소결하였다. 단시간의 소결은 Te의 증발을 억제할 수 있었다. ($Pb_{1-x}-Sn_{x}$)Te 밀도는 소결 시간보다 소결온도에 더 영향을 받았다. Sn첨가량이 10 mol% 이하일때 온도 상승에 따라 p-n전이 현상이 일어났으나 그 이상의 함량에서는 p-type반도성이 그대로 유지됨이 관찰되었다. 열기전력은 500 K, x=0.2일때 250 $\mu$V/K의 최대치론 나타내었다. Sn함량의 증가에 따라 최대치는 낮아졌으며, 그 온도는 고온측으로 이동하였으며, 전기전도도의 최대치는 온도가 상승함에 따라 저하되었다.

• 한국광학회지
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• 제16권6호
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• pp.553-559
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• 2005

(110) ZnTe 결정을 사용한 광정류(Optical Rectification)법에 의한 테라헤르츠파의 발생과 자유공간 전광 샘플링(Free-Space Electro-Optic Sampling; FS-EOS)법에 의한 테라헤르츠파의 검출특성에 대해서 보고한다. ZnTe 결정에 펌프용 레이저광에 대한 반사방지막 코팅을 실시함으로서 테라헤르츠파 신호크기가 $27\%$ 증가함을 알 수 있었다. ZnTe 결정의 두께가 얇을수록 테라헤르츠파의 신호의 크기는 작으나 광대역의 주파수를 가진 스펙트럼이 얻어졌다. 또한 레이저광의 편광방향과 ZnTe 결정의 (001)축사이의 각도에 따른 테라헤르츠파의 신호 변화, 펌프광 출력에 따른 테라헤르츠파의 신호크기 변화 등에 대한 특성이 조사되었다.

• 한국분말재료학회지
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• 제18권5호
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• pp.449-455
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• 2011

In this study, p-type $(AgSbTe_2)_{15}(GeTe)_{85}$: TAGS-85 compound powders were prepared by gas atomization process, and then their microstructures and mechanical properties were investigated. The fabricated powders were of spherical shape, had clean surface, and illustrated fine microstructure and homogeneous $AgSbTe_2$ + GeTe solid solution. Powder X-ray diffraction results revealed that the crystal structure of the TAGS-85 sample was single rhombohedral GeTe phase, which with a space group $R_{3m}$. The grain size of the powder particles increased while the micro Vickers hardness decreased with increasing annealing temperature within the range of 573 K and 723 K due to grain growth and loss of Te. In addition, the crystal structure of the powder went through a phase transformation from rhombohedral ($R_{3m}$) at low-temperature to cubic ($F_{m-3m}$) at high-temperature with increasing annealing temperature. The micro Vickers hardness of the as-atomized powder was around 165 Hv, while it decreased gradually to 130 Hv after annealing at 673K, which is still higher than most other fabrication processes.