• Title/Summary/Keyword: TE 5

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Studies on the Selective Oxidation of Niobium Containing Mixed Metal Oxide Catalysts (니오비움 함유 복합 금속산화물 촉매의 선택산화반응에 관한 연구)

  • Kim, Young-Chul;Kim, Hyeong-Ju;Moon, Dong-Ju
    • Applied Chemistry for Engineering
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    • v.9 no.1
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    • pp.129-134
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    • 1998
  • Conversion of propane to acrylonitrile via ammoxidation was studied using physically mixed catalysts composed of $Nb_2O_5(10{\sim}30wt%)$ and $V_{0.4}Mo_1Te_{0.1}$. Catalytic activities of ammoxidation were improved by adding strong acidic niobium oxide to $V_{0.4}Mo_1Te_{0.1}$, the selectivities to acrylonitrile+propylene being remained constant. The maximum activity was obtained at the mixing ratio 25wt% niobium oxide in $Nb_2O_5-V_{0.4}Mo_1Te_{0.1}$. Niobium oxide was found to be a selective catalyst for the oxidative dehydrogenation of propane.

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Investigation of Ball Size Effect on Microstructure and Thermoelectric Properties of p-type BiSbTe by Mechanical Alloying

  • Lwin, May Likha;Yoon, Sang-min;Madavali, Babu;Lee, Chul-Hee;Hong, Soon-Jik
    • Journal of Powder Materials
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    • v.23 no.2
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    • pp.120-125
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    • 2016
  • P-type ternary $Bi_{0.5}Sb_{1.5}Te_3$ alloys are fabricated via mechanical alloying (MA) and spark plasma sintering (SPS). Different ball sizes are used in the MA process, and their effect on the microstructure; hardness, and thermoelectric properties of the p-type BiSbTe alloys are investigated. The phases of milled powders and bulks are identified using an X-ray diffraction technique. The morphology of milled powders and fracture surface of compacted samples are examined using scanning electron microscopy. The morphology, phase, and grain structures of the samples are not altered by the use of different ball sizes in the MA process. Measurements of the thermoelectric (TE) transport properties including the electrical conductivity, Seebeck coefficient, and power factor are measured at temperatures of 300-400 K for samples treated by SPS. The TE properties do not depend on the ball size used in the MA process.

Formation of Ohmic Contact in P-Type CdTe Using Cu2 Te Electrode and Its Effect on the Photovoltaic Properties of CdTe Solar Cells (Cu2Te 배면 전극을 이용한 p-type CdTe 태양전지의 ohmic contact 형성 및 CdTe 태양전지의 광전압 특성)

  • Kim, Ki-Hwan;Yun, Jae-Ho;Lee, Doo-Youl;Ahn, Byung-Tae
    • Korean Journal of Materials Research
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    • v.12 no.12
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    • pp.918-923
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    • 2002
  • In this work, CdTe films were deposited on CdS/ITO/glass substrate by a close spaced sublimation (CSS) method. A $Cu_2$Te layer was deposited on the CdTe film by evaporating $Cu_2$Te powder. Then the samples were annealed for p+ ohmic contact. TEM and XRD analysis showed that $CdTe/Cu_2$Te interface exhibited different forms with various annealing temperature. A good p+ ohmic contact was achieved when the annealing temperature was between $180^{\circ}C$ to $200^{\circ}C$. Best cell efficiency of 12.34% was obtained when post annealing temperature was $200^{\circ}C$ for 5 min. Thermal stress test of the CdS/CdTe cells with carbon back contact showed that the $Cu_2$Te contact was stable at $50^{\circ}C$ in $N_2$ and was slowly degraded at $100^{\circ}C$ in $N_2$. In comparison to the conventional carbon contact, the $Cu_2$Te contact showed a better thermal stability.

A Study on the Electrochemical Deposition and p-Type Doping of ZnTe Films as a Back Contact Material for CdTe Photovoltaic Solar Cells (CdTe계 태양전지에 응용되는 ZnTe 박막의 전기화학적 제조 및 Cu 도핑 연구)

  • Kim, Dong-Hwan;Jeon, Yong-Seok;Kim, Gang-Jin
    • Korean Journal of Materials Research
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    • v.7 no.10
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    • pp.856-862
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    • 1997
  • 박막형 CdTe/CdS 태양전지의 배면전극(back contacts)물질로서 Cu도핑된 ZnTe 박막(ZnTe:Cu)을 전착법(electroplating)으로 제조하는 연구를 수행하였다. Sulfate계의 전해질 수용액에서 CdTe 기판과 투명전극으로 코팅된 유리(In$_{2}$O$_{3}$: Sn, ITO)기판 위에 ZnTe 박막을 코팅하는 방법으로써 potentiostat와 기판(cathode), Pt counter electrode, Ag/AgCI 표준전극으로 구성된 장치를 사용하여 pH=2.5-4, T=70-8$0^{\circ}C$, 0.02M $Zn^{2+}$ 1x$10^{-4}$M TeO$_{2}$, 0.2M $K_{2}$SO$_{4}$조건에서 -0.800 Vs~-0.975 V 범위의 전압(V$_{a}$ )에 걸쳐 실험하였다. ITO박막을 기판으로 사용하여 cyclic voltammogram을 작성한 결과 약 -0.50 V 에서 Te환원 peak이 나타났다. Auger electron spectroscopy (AES)로 조성분석한 결과 표면에서 Zn signal이 강하게 나왔고 시편의 두께에 따라 Zn의 signal감소하는 반면 Cd signal은 증가하는 것이 확인되었다. SEM 사진으로부터 ZnTe의 표면이 작은 입자 (0.2$\mu\textrm{m}$ 이하)로 구성되어 있으며 낮은 V$_{a}$ 에서는 입자가 작아지면서 조직이 치밀해짐이 관찰되었다. Optical transmission방법에 의하여 ITO기판위에 입혀진 박막의 밴드갭은 2.5 eV으로 측정되었다. 수용액중의 Cu$_{2+}$와 triethanolamine(TEA)은 산성용액에서 착물형성이 이루어지지 않았으며 1,10-phenanthroline과는 pH=2에서도 착물이 형성되었다.

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Structural Dependence of Nonlinear Optical Properties in $TeO_2-PbO-GeO_2$ ($TeO_2-PbO-GeO_2$계 유리 내 비선셩 광학 특성의 구조 의존성)

  • Kim, Weon-Hyo;Heo, Jong;Kim, You-Song;Ryou, Sun-Youn
    • Journal of the Korean Ceramic Society
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    • v.33 no.5
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    • pp.507-513
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    • 1996
  • Nonlinear optical properties of TeO2-PbO-GeO2 glasses were investigated and their correlation with struc-tural modification was investigated. Third-order nonlinear susceptibility $\chi$, ranged between 5.0$\times$10-13 esu and 10.7$\times$10-13 esu which are approximately 20-40 times larger than that of silica glass. The glass with a composition of 85(80TeO2-20PbO)-15GeO2(mol%) seemed to provide an optimum compromise between $\chi$and the stability against crystallization. Analyses of the Raman spectra suggested that these glasses are mainly composed of [TeO4] tbp, [TeO3]tp and [GeO4] tetrahedral structural units. It was concluded that the positive contribution of Pb2+ with high polarizability to $\chi$ in TeO2-PbO glasses overwhelmed the negative influence due to the structural modification of [TeO4]tbplongrightarrow[TeO3]tp. On the other hand addition of GeO2 in TeO2-PbO-GeO2 glasses resulted in the decrease of $\chi$ values. This behavior was attributed to the formation of [GeO4] polyhedra at the expense of [TeOn] polyhedra and Pb2+ ions which normally sowed a higher contribu-tion to $\chi$ than [GeO4] polyhedra.

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The Effect of N2 Gas Doping on Sb2Te3Thin Film for PRAM Recording Layer (PRAM 기록막용 Sb2Te3 박막의 질소 첨가에 대한 영향)

  • Bae, Jun-Hyun;Cha, Jun-Ho;Kim, Kyoung-Ho;Kim, Byung-Geun;Lee, Hong-Lim;Byeon, Dae-Seop
    • Journal of the Korean Ceramic Society
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    • v.45 no.5
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    • pp.276-279
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    • 2008
  • In this research, properties of $N_2$-doped $Sb_2Te_3$ thin film were evaluated using 4-point probe, XRD and AFM. $Sb_2Te_3$ material has faster crystallization rate than $Ge_2Sb_2Te_5$, but sheet resistance difference between amorphous and crystallization state is very low. This low sheet resistance difference decreases sensing margin in reading operation at PRAM device operation. Therefore, in order to overcome this weak point, $N_2$ gas was doped on $Sb_2Te_3$ thin film. Sheet resistance difference between amorphous and crystallized state of $N_2$-doped $Sb_2Te_3$ thin film showed about $10^4$ times higher than Un-doped $Sb_2Te_3$ thin film because of the grain boundary scattering.

Native Oxide Formations on (Al, Ga) As and (Cd, Mn)Te surfaces ((Al, Ga)As 와 (Cd, Mn)Te의 복합화합물 반도체표면에서의 자연 산화물의 형성)

  • 최성수
    • Journal of the Korean Vacuum Society
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    • v.5 no.1
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    • pp.6-13
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    • 1996
  • The kinetics of native oxide formation on the (Al, Ga)As and (Cd, Mn)Te have been studied by X-ray photoelectron spectroscopy(XPS) and Auger electron spectroscopy(AES). The regrowth of native oxide after 3keV Ar ion sputter etch and deionized water etch has been studied. The previous report exhibited that the native oxide on CdTe and GaAs can be removed completely by deionzied(DI) water only[1]. On the other hand, the airgrown native oxide on (Al, Ga)As become nonhomogeneous and the regrown native oxide on (Cd,Mn)Te can be partially removed.

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Characteristics of Raman scattering spectroscopy for $ZnS_{1-x}Te_x$ alloy semi- conductor ($ZnS_{1-x}Te_x$ 삼원 화합물 반도체의 라만 산란 특성)

    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.12 no.5
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    • pp.223-228
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    • 2002
  • We have studied the characteristics of Raman scattering spectroscopy from $_ZnS{1-x}Te_x$ alloys in the whole range of Te composition x. The Raman spectra showed two-mode behaviors for those alloys. The Raman line shape showed the changes of an asymmetry and broadening of that with Te composition x. The asymmetric broadening of the line shape could be explained with a spatial correlation model.

Optoelectrical Properties of HgCdTe Epilayers Grown by Hot Wall Epitaxy

  • Yun, Suk-Jin;Hong, Kwang-Joon
    • Journal of Sensor Science and Technology
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    • v.13 no.4
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    • pp.277-281
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    • 2004
  • $Hg_{1-x}Cd_{x}Te$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of $590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was $5{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111)/GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.