한국진공학회지 (Journal of the Korean Vacuum Society)

한국진공학회 (The Korean Vacuum Society)
권호 표지

(Al, Ga)As 와 (Cd, Mn)Te의 복합화합물 반도체표면에서의 자연 산화물의 형성

Native Oxide Formations on (Al, Ga) As and (Cd, Mn)Te surfaces

  • 발행 : 1996.03.01
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초록

The kinetics of native oxide formation on the (Al, Ga)As and (Cd, Mn)Te have been studied by X-ray photoelectron spectroscopy(XPS) and Auger electron spectroscopy(AES). The regrowth of native oxide after 3keV Ar ion sputter etch and deionized water etch has been studied. The previous report exhibited that the native oxide on CdTe and GaAs can be removed completely by deionzied(DI) water only[1]. On the other hand, the airgrown native oxide on (Al, Ga)As become nonhomogeneous and the regrown native oxide on (Cd,Mn)Te can be partially removed.

키워드

참고문헌

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