• Economic and Environmental Geology
• /
• v.22 no.4
• /
• pp.327-339
• /
• 1989

Cassiterite, tantalite, columbite and tantalian rutile are found as accessory minerals in Soonkyoung tin-bearing pegmatites. These minerals occur as finely disseminated specks of up to micro-size in diameter and coarse grain size varying from 0.5-50mm in albite, muscovite and quartz assemblage. Cassiterite geneally shows a moderate to intense pleochroism, having a color brownish yellow to deep reddish brown. The substitution of $Ta^{+5}$, $Nb^{+5}$, $Ti^{+4}$ and Fe* for $Sn^{+4}$ in cassiterite ranges 0.01-0.10 mol%. The zoned cassiterite give a higher Ta/Nb ratios in margin than the ratios in core. This is due to the preferential $Ta^{+5}$ affinity to lower temperature during the crystallization of cassiterite. Tantalite-columbite and tantalian rutile occur in cassitertie with exsolution texture and/or infiltrate into the micro-fissures of cassiterite with micro quartz vein. The compositions of tantalite-columbite show the wide ranges of $Ta_2O_5$ : 14-46 wt.%, $Nb_2O_5$ : 60-28 wt. % and FeO*: 10.15 wt.%. The variation of chemical composition in tantalit-columbite exhibits the decreasing trends of $Mn^{+2}/M^{+2}+Fe^*$ with $Ta^{+5}/Ta^{+5}+Nb^{+5}$ increasing. These trends of vatiations indicate that the Ta/Nb fractionation are enhanced by higher Ta-complex activity in late stage of pegmatite consolidation and lower activity of F in agreements with the F-and Li-micas not to be developed in Soonkyoung tin-bearing pegmatite.

• Korean Journal of Materials Research
• /
• v.8 no.10
• /
• pp.945-949
• /
• 1998

Ta(OC2H5)5와 NH3를 이용하여 Cycle-CVD법으로 산화탄탈륨 막을 증착하였다. Cycle-CVD법에서는 Ta(OC2H5)5와 NH3사이에 불활성 기체를 주입한다. 하나의 cycle은 Ta(OC2H5)5주입, Ar주입, NH3 주입, Ar 주입의 네 단계로 이루어진다. Cycle-CVD법으로 산화탄탈륨 막을 증착할 때, 온도 $250-280^{\circ}C$에서 박막의 증착 기구는 원자층 증착(Atomic Layer Deposition:ALD)이었다. $265^{\circ}C$에서 Ta(OC2H5)5:Ar:NH3:Ar:NH3:Ar의 한 cycle에서 각 단계의 주입 시간을 1-60초:5초:5초:5초로 Ta(OC2H5)5 주입 시간을 변화시키면서 산화탄탈륨 막을 Cycle-CVD법으로 증착하였다. Ta(OC2H5)5주입시간이 증가하여도 cycle 당 두께가 $1.5\AA$/cycle로 일정하였다. $265^{\circ}C$에서 증착된 박막의 누설 전류는 2MV/cm에서 2x10-2A/$\textrm{cm}^2$이었고 열처리후의 산화탄탈륨 막의 누설 전류값은 $10-4A\textrm{cm}^2$ 이하고 감소하였다. 증착한 산화탄탈륨 막의 성분을 Auger 전자 분광법으로 분석하였다. 2$65^{\circ}C$에서 증착한 막의 성분은 탄탈륨 33at%, 산소 50at%, 탄소 5at%, 질소 12at% 이었으며 90$0^{\circ}C$, O2300torr에서 10분 동안 열처리한 박막은 탄탈륨 33at%, 산소 60wt%, 탄소 4at%, 질소 3at%이었다. 박막의 열처리 온도가 높을수록 불순물인 탄소와 질소의 박막 내 잔류량이 감소하였다. 열처리 후의 박막은 O/Ta 화학정량비가 증가하였으며 Ta의 4f7/5와 4f 5/2의 결합 강도가 열처리 전 박막보다 증가하였다. 열처리 후 누설 전류가 감소하는 것은 불순물 감소와 화학정량비 개선 및 Ta-O 결합 강도의증가에 의한 것으로 생각된다.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1998.09a
• /
• pp.85-90
• /
• 1998

Reactive ion etching (RIE) of Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the could be used effectively to etch the Ta-Al alloy thin film. The etching rate of the thin film at a Ta content of 50 mol% was about 67$\AA$/min. No selectivity between the Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the etching rate of the SiO2 layer was 12 times faster than that of the Ta-Al alloy thin film. In addition, it was observed that photoresist of AZ5214 was more useful than Shiepley 1400-2 in RIE with the CF4 gas.

• Journal of the Korean Ceramic Society
• /
• v.38 no.6
• /
• pp.558-567
• /
• 2001

본 연구에서는 알콕사이드를 전구물질로 하는 졸겔공정을 이용하여 Bi 과잉 12 mol%의 조성인 B $i_4$ $Ti_3$ $O_{12}$ 박막과 B $i_4$ $Ti_{3-x}$T $a_{x}$ $O_{12}$(x=0.1, 0.2, 0.3) 박막을 제조하였다. XPS 분석에 따르면 Ta 치환 x=0.2에서 Bi 4f의 photoemission 곡선이 낮은 결합에너지로 이동하였고 피크 강도가 감소하는 현상이 관측되었다. 이는 x=0.1과 0.2 사이에서 Bi-O 결합이 길어져 인장상태 하에 있었음을 나타내었다. B $i_4$ $Ti_3$ $O_{12}$(BIT) 박막의 유전상수와 유전손실은 100 kHz에서 340, 0.05이었고, B $i_4$ $Ti_{3-x}$T $a_{x}$ $O_{12}$ 박막에서 이들 값은 x=0.1에서 가장 높았으며, 각각 480, 0.13이었다. B $i_4$ $Ti_3$ $O_{12}$ 박막의 잔류분극과 항전계는 1.24$\mu$C/$ extrm{cm}^2$, 31.4 kV/cm 이었으나, Ta 치환 x=0.2에서 이들 값은 각각 19.7$\mu$C/$\textrm{cm}^2$, 49.5 kV/cm 에 이르렀다. 또한, B $i_4$ $Ti_3$ $O_{12}$ 박막의 누설전류 밀도는 ~$10^{-6}$ A/$\textrm{cm}^2$ 정도이었으며, Ta 치환은 누설전류를 감소시켜 Ta 치환 x=0.2 이상에서 BIT 박막에 비해 한 차수 정도 낮아졌다. Ta 치환에 따른 B $i_4$ $Ti_3$ $O_{12}$ 전기 물성에서 변화는 Bi-O 결합에서 관측된 인장상태로의 전이와 연관성이 있었으며, 덧붙여 치환에서 생성된 전자에 의한 정공보상이 이에 영향을 끼쳤다. 정공보상이 이에 영향을 끼쳤다.끼쳤다.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.18 no.4
• /
• pp.165-168
• /
• 2008

Ta-doped thin films were deposited on quartz and indium-tin oxide glass substrates using a co-sputtering method. The Ta-doped films formed a solid solution that induced structural changes from rutile to anatase phase. The anodic photocurrents of the Ta-doped $TiO_2$ electrodes were observed not only in UV but also in the visible light range. The photocurrent response in visible light on Ta-doped $TiO_2$ films are due to bandgap reduction.

• Journal of Advanced Navigation Technology
• /
• v.7 no.2
• /
• pp.211-216
• /
• 2003

In this paper, characteristics of Ta-Ti alloy was studied as a gate electrode for NMOS devices to replace the widely used polysilicon. Ta-Ti alloy was deposited directly on $SiO_2$ by a co-sputtering method using two of Ta and Ti targets. The sputtering power of each metal target was 100W. To compare with Ta-Ti, Ta deposited with a 100W sputtering power was fabricated as well. In order to investigate the thermal/chemical stability of the Ta-Ti alloy gate, the alloy was annealed at $600^{\circ}C$ with rapid thermal annealer. No appreciable degradation of the device was observed. Also the results of electrical analysis showed that the work function of Ta-Ti metal alloy was about 4.1eV which was suitable for NMOS devices and sheet resistance of alloy was lower than that of polysilicon.

• Economic and Environmental Geology
• /
• v.47 no.4
• /
• pp.395-404
• /
• 2014

We conducted the geophysical survey of possible hydrothermal vent sites at 2009, in the Lau Basin, the south western Pacific and analyzed the magnetic characteristics of TA19-1 and TA19-2 seamounts. TA19-1 is a cone-shaped seamount with a caldera summit. TA19-2 seamount is bigger and shows more complicated topography than TA19-1 seamount. TA19-2 has a large caldera, a summit in the west side of the caldera and several crests. Simple dipole anomalies with a high over the north and a low over the south occur in TA19-1 seamount. High magnetic anomalies are located in the northern flank and the summit of TA19-2 seamount and low anomalies around the summit and the caldera. The results of bathymetry and magnetic data suggest that TA19-2 seamount might have more complicated magmatic process than TA19-1. Low magnetization zones are located over the summit, the calderas and the caldera rims. The magnetization lows indicate that submarine hydrothermal vents, along faults and fracture zones, could have caused an alteration of magnetic minerals. The magnetization highs over the summit and the calderas might have been related with later magmatisms like volcanic sills, intrusions.

• Korean Chemical Engineering Research
• /
• v.44 no.3
• /
• pp.259-264
• /
• 2006

The separation and purification of $TaCl_5$is indispensable in the synthetic process of $TaCl_5$by chlorination of tantalum oxide. The reaction products are mainly $TaCl_5$, $NbCl_5$, $TiCl_4$ and $FeCl_2$. However, we need to separate $TaCl_5/NbCl_5$ mixture from the reaction product, because $TaCl_5$ and $NbCl_5$ are easily separated each other by distillation or hydrogen reduction process. In this work, a comparison study was carried out between direct sequence and indirect sequence to obtain $TaCl_5/NbCl_5$ mixture from the reaction product by removing light component, $TiCl_4$ and heavy component, $FeCl_2$ using two distillation columns. It was concluded that the direct sequence gave better results than indirect sequence in the aspect of initial capital costs and the associative operating costs.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.3
• /
• pp.556-560
• /
• 2007

In this study, both structural and microwave dielectric properties of the $Mg_5B_4O_{15}$ (B=Ta, Nb) cation-deficient perovskite ceramics with sintering temperature were investigated. All sample of the $Mg_5B_4O_{15}$ (B=Ta, Nb) ceramics were prepared by the conventional mixed oxide method and sintered at $1400^{\circ}C{\sim}1500^{\circ}C$. The bulk density and quality factor of the $Mg_5B_4O_{15}$ (B=Ta, Nb) ceramics were increased with increasing sinterning temperature in the range of $1400^{\circ}C{\sim}1450^{\circ}C$, but these were decreased the sintering temperature of above $1450^{\circ}C$. The dielectric constant of the $Mg_5Ta_4O_{15}$ ceramics was increased continuously with increasing sintering temperature. And the dielectric constant of the $Mg_5Nb_4O_{15}$ ceramics was increased in as the sintering temperature increasesfrom $1400^{\circ}C{\sim}1450^{\circ}C$ but was decreased at the temperatures above $1475^{\circ}C$. In the case of the $Mg_5Ta_4O_{15}\;and\;Mg_5Nb_4O_{15}$ ceramics sintered at $1450^{\circ}C$ for 5h, the dielectric constant, quality factor, and temperature coefficient of the resonant frequency (TCRF) were 8.2, 259,473 GHz, $-10.91ppm/^{\circ}C$ and 14, 37,350 GHz, $-52.3ppm/^{\circ}C$, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.57 no.7
• /
• pp.1208-1212
• /
• 2008

In this study, both structural and microwave dielectric properties of the $Ba_5B_4O_{15}$ (B=Ta, Nb) cation-deficient perovskite ceramics with sintering temperature were investigated. All samples of the $Ba_5B_4O_{15}$ (B=Ta, Nb) ceramics were prepared by the conventional mixed oxide method and sintered at $1325^{\circ}C{\sim}1575^{\circ}C$. The bulk density and dielectric constant of the $Ba_5Ta_4O_{15}$ ceramics were increased continuously with increasing of sintering temperature. The quality factor of the $Ba_5Ta_4O_{15}$ ceramics was increased in as the sintering temperature increases from $1375^{\circ}C{\sim}1475^{\circ}C$ but decreased at the temperatures above $1475^{\circ}C$. And the bulk density, dielectric constant and quality factor of the $Ba_5Nb_4O_{15}$ ceramics were increased in as the sintering temperature increases from $1325^{\circ}CP{\sim}1400^{\circ}C$ but decreased at the temperatures above $1400^{\circ}C$. In the case of the $Ba_5Ta_4O_{15}$ sintered at $1475^{\circ}C$ and $Ba_5Nb_4O_{15}$ ceramics sintered at $1400^{\circ}C$, the dielectric constant, quality factor, and temperature coefficient of the resonant frequency (TCRF) were 25.15, 53,105 GHz, -3.06 $ppm/^{\circ}C$ and 39.55, 28,052 GHz, +5.7 ppm/$^{\circ}C$, respectively.