• Title/Summary/Keyword: TA-4

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Adhesion and Diffusion Barrier Properties of $TaN_x$ Films between Cu and $SiO_2$ (Cu 박막과 $SiO_2$ 절연막사이의 $TaN_x$ 박막의 접착 및 확산방지 특성)

  • Kim, Yong-Chul;Lee, Do-Seon;Lee, Won-Jong
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.3
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    • pp.19-24
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    • 2009
  • Formation of an adhesion/barrier layer and a seed layer by sputtering techniques followed by electroplating has been one of the most widely used methods for the filling of through-Si via (TSV) with high aspect ratio for 3-D packaging. In this research, the adhesion and diffusion-barrier properties of the $TaN_x$ film deposited by reactive sputtering were investigated. The adhesion strength between Cu film and $SiO_2$/Si substrate was quantitatively measured by $180^{\circ}$ peel test and topple test as a function of the composition of the adhesive $TaN_x$ film. As the nitrogen content increased in the adhesive $TaN_x$ film, the adhesion strength between Cu and $SiO_2$/Si substrate increased, which was attributed to the increased formation of interfacial compound layer with the nitrogen flow rate. We also examined the diffusion-barrier properties of the $TaN_x$ films against Cu diffusion and found that it was improved with increasing nitrogen content in the $TaN_x$ film up to N/Ta ratio of 1.4.

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Occurrence of the Nb-Ta Ore Bodies in Pegmatites, Mujoo (무주 페그마타이트 내 Nb-Ta 광화대의 산출상태)

  • Kang, Min-Woo;Kim, Ji-Hyun;Choi, Jin-Beom
    • Journal of the Mineralogical Society of Korea
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    • v.24 no.2
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    • pp.133-143
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    • 2011
  • In Mujoo area, the granitic pegmatites are developed in the granitic gneiss complex with Jurassic gneissic granites, where Nb-Ta mineralization were reported. Pegmatites are mainly composed of large crystals of quartz, feldspars of end-member orthoclase and albite, and muscovite. Nb-Ta minerals in study area are columbite (Nb > Ta) in composition. Chemistry of muscovites shows post-magmatic in origin and they are closely related with columbite. Large columbite, in pegmatites occurred with quartz and feldspars, while microcrystalline columbite is associated with muscovite. The Nb contents in large columbite are relatively higher than those in microcrystalline ones. Two pegmatites, 4~15 m in width and 120 m, 250 m in extension respective1y, are developed. Five drilling cores with total 600 m in length are finally obtained and revealed no possible potential for economic rare metals of Na-Ta deposits.

A Study on the Electrical Properties of $Ta_2O_{5}$ Thin Films by Atomic Layer Deposition Method in MOS Structure (MOS구조에서의 원자층 증착 방법에 의한 $Ta_2O_{5}$ 박막의 전기적 특성에 관한 연구)

  • 이형석;장진민;임장권;하만효;김양수;송정면;문병무
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.4
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    • pp.159-163
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    • 2003
  • ln this work, we studied electrical characteristics and leakage current mechanism of $Ta_2O_{5}$ MOS(Metal-Oxide-Semiconductor) devices. $Ta_2O_{5}$ thin film (63 nm) was deposited by ALD(Atomic Layer Deposition) method at temperature of 235 $^{\circ}C$. The structures of the $Ta_2O_{5}$ thin films were examined by XRD(X-Ray Diffraction). From XRD, it is found that the structure of $Ta_2O_{5}$ is single phase and orthorhombic. From capacitance-voltage (C-V) anaysis, the dielectric constant was 19.4. The temperature dependence of current density-electric field (J-E) characteristics of $Ta_2O_{5}$ thin film was studied at temperature range of 300 - 423 K. In ohmic region (<0.5 MV/cm), the resistivity was 2.456${\times}10^{14}$ ($\omega{\cdot}cm$ at 348 K. The Schottky emission is dominant at lower temperature range from 300 to 323 K and Poole-Frenkel emission is dominant at higher temperature range from 348 to 423 K.

Combined Effect of N-Nitrosamines and Herpes Simplex Virus on Oral Carcinogenesis in Hamsters (N-Nitrosamine과 단순포진성 바이러스가 햄스터의 구강암발생에 미치는 영향에 관한 실험적 연구)

  • JP Hong
    • Journal of Oral Medicine and Pain
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    • v.15 no.1
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    • pp.125-132
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    • 1991
  • We have previously reported that simulated snuff dipping in conjunction with type I herpes simplex virus (HSV-1) induced oral malignant changes in hamsters. Present study was designed to investigate the carcinogenic effect of tobacco specific-N-nitrosamines (TSNAs) and HSV-1, alone or in combination, in hamsters. Hamsters were divided into 6 groups and the right buccal pouch mucosa were treated as follows: Grp 1, Control (Mock inoculation) [MI]+Topical Application [TA] of mineral oil[MO] : Grp 2, TA of 1% n'- nitrosonornicotine [NNN] + IM: Grp3, TA of 1% 4-N-nitrosomethylamino-1- (3-pyridyl)-1-butanone [NNK] + MI: Grp 4, HSV-1 inoculation [HI]+TA of MO : Grp 5, TA of 1% N-nitrosonornicotine [NNN] + HI: Grp 6, TA of 1% NNK + HI. TA of MO or TSNAs was initiated 1 day after the MI or HI and given 3 times per week for 20 consecutive weeks. At the buccal pouches were fixed for light microscope examination. No animal s developed tumors or malignant histopathologic changes in the mucosa of the buccal pouches. These data indicate that individual TSNAs, alone or in conjunction with HSV-1 infection, do not develop malignant changes in hamster buccal pouches.

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MOS characteristics of Ta-Mo gate electrode with $ZrO_2$ ($ZrO_2$ 절연막을 이용한 Ta-Mo 합금 MOS 게이트 전극의 특성)

  • An, Jae-Hong;Kim, Bo-Ra;Lee, Joung-Min;Hong, Shin-Nam
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.157-159
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    • 2005
  • MOS capacitors were fabricated to study electrical and chemical properties of Ta-Mo metal alloy with $ZrO_2$. The work function of Ta-Mo alloy were varied from 4.1eV to 5.1eV by controlling the composition. When the atomic composition of Mo is 10%, good thermal stability up to $800^{\circ}C$ was observed and work function of MOS capacitor was 4.1eV, compatible for NMOS application. But pure Ta exhibited very poor thermal stability. After $600^{\circ}C$ annealing, equivalent oxide thickness of tantalum gate MOS capacitor was continuously decreased. Barrier heights of Ta-Mo alloy and pure metal that supported the work function values were calculated from Fowler-Nordheim analysis. As a result of these electrical?experiments, Ta-Mo metal alloy with $ZrO_2$ is excellent gate electrode for NMOS.

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A Study on the Pyroelectric Effects of $LiTaO_3$ Single Crystal by Using the Dynamic Method (Dynamic 방법을 이용한$ LiTaO_3$ 단결정의 초전특성에 대한 연구)

  • 강성준;정양희
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.3
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    • pp.454-460
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    • 2003
  • The modulated frequency dependence on the pyroelectric properties of LiTaO$_3$ single crystal was investigated by the dynamic method. The pyroelectric coefficient of LiTaO$_3$ single crystal was 2.1${\times}$$10^{-8}$/$\textrm{cm}^2$ㆍK. and figure of merits for the responsivity and the detectivity were 1.31${\times}$$10^{-10}$Cㆍcm/J and 1.47${\times}$$10^{-8}$C\ulcornercm/J. respectively. The voltage responsivity corresponded with the pyroelectric voltage exhibited the highest value as about 165V /W at 4Hz and then was in inverse proportion to the frequency over 20Hz. The noise equivalent power and the detectivity at 4Hz were 8.4${\times}$$10^{-9}$ W/Hz$^{1}$2/ and 2.2${\times}$$10^{7}$ cmㆍHz$^{1}$2//W, respectively. Therefore, we could found that LiTaO$_3$ single crystal shows a excellent pyroelectric properties in low frequency region for the human body detection.tection.

Desmutagenic Effects of Extracts Aloe with Different Solvents (알로에 용매별 추출물의 항변이원성)

  • 오명철;오창경;안용석;고정림;오혁수;김수현
    • Korean journal of food and cookery science
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    • v.16 no.5
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    • pp.385-389
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    • 2000
  • Desmutagenic effects of water-soluble and water-insoluble fractions from Aloe vera and Aloe avoresence with different solvents against the mutagenicity of 4-nitro-o-phenylenediamine(NPD) were investigated. Desmutagenic effects of water-insoluble fractions from Aloe vera and Aloe avoresence against NPD-induced mutations in TA97 and TA98 strains were very high compared with water-soluble fractions: whereas water-soluble fractions from two kinds of Aloes showed the inhibition effects of 4∼56% water-insoluble fractions showed the activities of 54∼100% for Aloe vera and 74∼100% for Aloe avoresence. Especially, the addition of 20 $\mu$ι of water-insoluble fractions per plate showed high activities up to 90% in TA97 and TA98 strains.

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Inhibitory Effects of Synurus deltoides Extracts on the Mutagenesis Induced by Various Mutagens (각종 변이원들에 의해 유도된 돌연변이원성에 대한 수리취 추출물의 억제작용)

  • 함승시;한홍식;최근표;오덕환
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.26 no.3
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    • pp.528-533
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    • 1997
  • This study was undertaken to determine the antimutagenic effects of Synurus deltoides extracts on the mutagenesis induced by 3-amino-1, 4-dimethyl-5-H-pyrido[4, 3-blindol(Trp-P-1), 2-amitnofluorene (2-AF) and 4-nitroquinolin-1-oxide(4NQO) using Ames test. Raw juice, heated juice, and ethanol extract from Synurus deltoides itself did not induce mutagenesis. The raw juice, heated juice and ethanol extract of 50${mu}ell$/plate showed approximately 90%, 37% and 28% inhibitory effect on the mutagenesis induced by Trp-P-1 against TA98 strain, while 80%, 60% and 58% inhibition was observed on the mutagenesis induced by 2-AF at the concentration of 200${mu}ell$/plate, respectively. TA100 strain was more sensitive than TA98 strain by raw juice, heated juice and ethanol extract on the mutagenesis induced by Trp-P-1 and 2-AF. Meanwhile, the raw juice, heated juice, and ethanol extract showed very limited inhibitory effects on the mutagenesis induced by 4-NQO against TA98 and TA100 strain. These results indicate that raw juice had the strongest inhibitory effect on the Trp-P-1 or 2-AF induced mutagenesis, but all of the extracts had a little antimutagenc effects on the 4-NQO induced mutagenesis.

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Characterization of reactive sputtering TaN fate electrode on $HfO_2$ dielectrics ($HfO_2$ dielectrics를 이용한 reactive sputtering TaN gate electrode 의 특성분석)

  • Kim Youngsoon;Lee Taeho;Ahn Jinho
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2003.11a
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    • pp.185-190
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    • 2003
  • 고유전물질인 $HfO_2$ 극박막에 사용될 TaN metal 전극에 대한 특성에 대한 연구를 하였다. 고유전물질인 $HfO_2$는 4" p-type wafer를 SCI cleaning후 ALD(atomic layer deposition)을 통해 $50\AA$를 증착하였다. Ff source는 TEMAH를 이용하였으며 Oxygen source는 $H_2O$를 이용하였다. 이렇게 증착한 $HfO_2$ 극박막에 Ta target을 이용하여 질소 가스를 Ar가스에 첨가하여 reactive sputtering을 통해서 TaN 전극을 증착하였다. TaN 박막의 증착두께는 a--step과 TEM을 통해서 확인하였으며 면저항은 four point probe를 이용하여 측정하였다. 이렇게 증착된 $HfO_2/TaN$구조에 대한 전기적 특성을 측정하였다.

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A Study on the Surface of the Dry Etched TaN Thin Film by Adding The CH4 Gas in BCl3/Ar Inductively Coupled Plasma (BCl3/Ar 유도결합 플라즈마 안에 CH4 가스 첨가에 따른 건식 식각된 TaN 박막 표면의 연구)

  • Woo, Jong-Chang;Choi, Chang-Auck;Yang, Woo-Seok;Joo, Young-Hee;Kang, Pil-Seung;Chun, Yoon-Soo;Kim, Chang-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.5
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    • pp.335-340
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    • 2013
  • In this study, the plasma etching of the TaN thin film with $CH_4/BCl_3/Ar$ gas chemistries was investigated. The etch rate of the TaN thin film and the etch selectivity of TaN to $SiO_2$ was studied as a function of the process parameters, including the amount of $CH_4$. X-ray photoelectron spectroscopy (XPS) and Field-emission scanning electron microscopy (FE-SEM) was used to investigate the chemical states of the surface of the TaN thin film.