• Journal of the Korean Vacuum Society
• /
• v.8 no.3A
• /
• pp.224-230
• /
• 1999

$SrBi_{2x}Ta_2O_9$ (SBT) thin films were prepared on platinized silicon substrates by MOD process, and their ferroelectric and leakage current characteristics were investigated. The grain size of the MOD derived SBT films increased with increasing the BI/Ta mole ration. Although the SBT films with x of 0.8~1.2 were composed of the equiaxed grains, the elongated grains were also observed for the SBT films with x of 1.4 and 1.6. The SBT film with x of 1.2 exhibited the optimum ferroelectric properties of 2PR : 9.79 $\muC/\textrm{cm}^2$ and Ec : 24.2kV/cm at applied voltage of 5V. The leakage current density of the SBT films increased with increasing the BI/Ta mole ratio. With post annealing process, 2Pr and $E_c$of the SBT film with x of 1.2 increases 11.3 $\muC/\textrm{cm}^2$ and 39.6kV/cm, respectively. decrement of the leakage current density by post annealing process increased remarkably with increasing the Bi/ta mole ratio, and the SBT film with x=1.6 exhibited the lowest leakage current density after post annealing process.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.2
• /
• pp.67-72
• /
• 2004

The microwave dielectric properties and microstructure of the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramic were, investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of $1350^{\circ}C$∼$1425^{\circ}C$. According to the XRD patterns, the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramics have the $Mg_4Ta_2O_{9}$ phase(hexagonal). The dielectric constant($\varepsilon$$_{\gamma}$) and density increased with sintering temperature and mole fraction of x. To improve the quality factor and the temperature coefficient of resonant frequency, TiO$_2$($\varepsilon_{r}$=100, $Q{\times}f_{r}$=40,000GHz, $\tau$$_{f}$=＋450 ppm/$^{\circ}C$) was added in $Mg_4Ta_2O_{9}$ ceramics. In the case of the $0.7Mg_4Ta_2O_{9}$-$0.3TiO_2$ and the $0.6Mg_4Ta_2O_{9}$-$0.4TiO_2$ceramics sintered at $1400^{\circ}C$ for 5hr., the microwave dielectric properties were $\varepsilon$$_{\gamma}$=11.72, $Q{\times}f_{r}$=126,419GHz, $\tau_{f}$=-31.82 ppm/$^{\circ}C$ and $\varepsilon_{r}$=12.19, $Q{\times}f_{r}$=109,411GHZ, $\tau$$_{f}$= -17.21 ppm/$^{\circ}C$, respectively.

• The Korea Swine Journal
• /
• v.19 no.11 s.219
• /
• pp.83-87
• /
• 1997

• Journal of environmental and Sanitary engineering
• /
• v.3 no.1 s.4
• /
• pp.41-67
• /
• 1988

Twelve residual pesticides which is applied mainly on the fruits and vegetables cultivation were tested for mutagenic activity using Salmonella typhimurium. The results were as follows. 1) The pesticides tested - Thalonil, Monopho, Tedion, Danoton, Ometon, Prosing, EPN, Phentoate, Parathion, 8appiran and Captan-, except Dicofol, showed mutagenic activity. Especially, the pesticides which activated with 8-9 mixture gave strong mutagenic activity. 2) With Salmonella typhimurium TA100, the pesticides Monopho, Parathion and Sappiran showed mutagenic activity at $0.5{\mu}g/plate;\;Ometon,\;0.01\; t.tl/plate;Thalonil,\;0.20{\mu}g/plate;\;Prosing,\; 0.20{\mu}l/plate;$ Tedion, Danoton and Phentoate, $1.0\;{\mu}l/plate;\;and\;Captan,\;1.0\;{\mu}g/plate.$ 3) With Salmonella typhimurium TA98, the pesticide Sappiran showed mutagenic activity at $0.02\;{\mu}g/plate;\;Thalonil,\;0.05\;{\mu}g/plate;\;EPN,\;0.05\;{\mu}/plate;\; Phentoate,\;0.10\; {\mu}l/plate;\;Danoton,\;0.50\;{\mu}l/plate;$ Prosing, $ 0.50\;{\mu}g/plate;\;and\;Tedion\;and\;Monopho,\;1.0\;{\mu}l/plate.$ 4) With Salmonella typhimurium TA1535, The pesticides Captan and Danoton showed mutagenic activity at $0.10\;{\mu}g/plate\;and\;0.20\;{\mu}g/plate,\;respectively.$ 5) With Salmonella typhimurium TA1538, The pestides Phentoate showed mutagenic activity at $0.05\;{\mu}l/plate;\;Monopho,\;0.10\;{\mu}l/plate;\;Thalonil,\;0.20 {\mu}g/plate;\;and\;Tedion\;and\;EPN,\;1.0\;{\mu}l/plate.$ 6) The pesticides which commonly showed high mutagenic activity were Thalonil, Phentoate, Parathion and Sappiran. The pesticides Ometon and EPN showed mutagenic activity at only TA100 and TA98, respectively.

• Bulletin of the Korean Chemical Society
• /
• v.28 no.11
• /
• pp.2089-2092
• /
• 2007

Tantalum-containing metal oxides, well known for their efficiency in water splitting and H2 production, have never been used in visible light driven photodecomposition of H2S and H2 production. The present work is an attempt in this direction and investigates their efficiency. A mixed metal oxide, ZnFe2Ta2O9, with the inclusion of Fe2O3 to impart color, was prepared by the conventional ceramic route in single- and double-calcinations (represented as ZnFe2Ta2O9-SC and ZnFe2Ta2O9-DC respectively). The XRD characterization shows that both have identical patterns and reveals tetragonal structure to a major extent and a minor contribution of orthorhombic crystalline system. The UV-visible diffuse reflection spectra demonstrate the intense, coherent and wide absorption of visible light by both the catalysts, with absorption edge at 650 nm, giving rise to a band gap of 1.9 eV. Between the two catalysts, however, ZnFe2Ta2O9-DC has greater absorption in almost the entire wavelength region, which accounts for its strong brown coloration than ZnFe2Ta2O9-SC when viewed by the naked eye. In photocatalysis, both catalysts decompose H2S under visible light irradiation (λ ≥ 420 nm) and produce solar H2 at a much higher rate than previously reported catalysts. Nevertheless, ZnFe2Ta2O9-DC distinguishes itself from ZnFe2Ta2O9-SC by exhibiting a higher efficiency because of its greater light absorption. Altogether, the tantalum-containing mixed metal oxide proves its efficient catalytic role in H2S decomposition and H2 production process also.

• Proceedings of the KIEE Conference
• /
• 2001.11a
• /
• pp.23-25
• /
• 2001

In this work, the $Ta_2O_5$ thin films were deposited on Pt/n-Si substrate by reactive magnetron sputtering and the RTA treatment at temperatures range from 650 to $750^{\circ}C$ in $O_2$ and vacuum. X-ray diffraction analysis, FE SEM, dielectric properties and leakage current density have been used to study the structural and electrical properties of the $Ta_2O_5$ thin films. XRD result showed that as- deposited films were amorphous and the annealed films crystallized (<$700^{\circ}C$) into ${\beta}-Ta_2O_5$. The crystallinity increased with temperature in terms of an increase in the intensity of the diffracted peaks(${\beta}-Ta_2O_5$) and annealing in oxygen reduced defect dang1ing Ta-O bonds. As deposited $Ta_2O_5$ films show the leakage current density $10^{-7}$ to $10^{-8}$ (A/$cm^2)$ at low electric fields (<200 kV/cm) However, it was found leakage current density of $Ta_2O_5$ thin films decreased with $O_2$ ambient annealing. The dielectric constant of the as deposited $Ta_2O_5$ thin films was ${\varepsilon}_r$ $9{\sim}11$ but the dielectric constant was increased after RTA treatment in $O_2$ ambient more then in vacuum.

• Journal of the Korean Magnetics Society
• /
• v.11 no.4
• /
• pp.146-150
• /
• 2001

The effect of H$_2$ content in Ar sputtering gas on exchange coupling field(H$_{ex}$) for NiFe/FeMn interface was studied. When NiFe layer of Si(100)/Ta(50 $\AA$)/NiFe(60 $\AA$)/FeMn(250 $\AA$)Ta(50 $\AA$) was deposited at 8% H$_2$ in sputtering gas, the maximum exchange coupling field(H$_{ex}$) and minimum coercivity(H$_{c}$) were obtained. When Si(100)/Ta(50 $\AA$)/NiFe(60 $\AA$)/FeMn(250 $\AA$)/NiFe(70 $\AA$)/Ta(50 $\AA$) was deposited at 5% H$_2$ in sputtering gas, the maximum exchange coupling field(H$_{ex}$) of 148 Oe was obtained. The (111) preferred orientation and grain size of underlayer NiFe were increased and the internal stress was reduced by H$_2$ in sputtering gas. And the (111) preferred orientation and grain size of FeMn layer were also increased.d.ased.

• Journal of the Korean Ceramic Society
• /
• v.40 no.12
• /
• pp.1165-1169
• /
• 2003

The Ta$_2$O$_{5}$ thin film was deposited on Si-(III) and glass substrate with the change of Ar:O$_2$ gas flow rate in the assist ion gun by the Dual ion-Beam Sputtering (DIBS). As the $O_2$ gas flow of the assist ion gun was decreased, the deposition rate of the thin films decreased. The refractive index was fixed (2.11, at 1550 nm) without regarding to $O_2$ gas flow of the range 3∼12 sccm in assist ion gun. The condition of Ar:O$_2$=3:12 was formatted stoichiometry composition of Ta$_2$O$_{5}$ and the ms roughness was small (0.183 nm).

• Journal of Sensor Science and Technology
• /
• v.5 no.2
• /
• pp.15-20
• /
• 1996

The diffusion of hydrogen ions into a sensing membrane causes the output voltage of pH-ISFET to vary with time, which might be considered to be drift in this sensor. We tried to deposit ultra-thin film for minimizing tile drift that has been considered to be main obstacle for putting pH-ISFET to practical use. In this paper, tantalum pentoxide, known as a good pH sensing membrane, was formed to about $70{\AA}$ thick by sol-gel method on $Si_{3}N_{4}/SiO_{2}$-gate of pH-ISFET. The fabricated $Ta_{2}O_{5}$-gate pH-ISFET showed good sensitivity(about 59mV/ pH) and good lineality in the range of pH $3{\sim}11$, and had relatively small average pH drift of about 0.06 pH/day.

• Korean Journal of Materials Research
• /
• v.11 no.12
• /
• pp.1047-1051
• /
• 2001

Purity tantalum powder has been produced by sodium reduction of potassium tantalum fluoride($K_2TaF_7$)in a stainless steel bomb. The influence of experimental variable, such as excess of reductant and temperature of reduction on the yield and quality of the Ta powder has been studied. The excesses of reductant were varied from -20%, -10%, 0%, 5%, 10%, 20%. When -20% excess of sodium was used, the un-reacted sodium remained in the reacted product. The yield of 81% of Ta powder has been achieved by reducing 50g of$K_TaF_7$with 5% sodium in excess of stoichiometric amount in presence of 16.8g of sodium chloride in the charge at a reduction temperature of$905{\circ}C$. The proportion of fine fraction(~325mesh) decreased appreciably with the increase of sodium excess, and the yield of tantalum powder improved from 65% to 94%. The average particle size of Ta Powder is improved from 3 microns to 4 microns in the 5% excess sodium.