• Title/Summary/Keyword: T-junction

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Quantitative identification of the fluxon-flow modes in a stack of intrinsic Josephson junctions of $Bi_2$$Sr_2$Ca$Cu_2$$O_{8+x}$ single crystals

  • Bae, Myung-Ho;Lee, Hu-Jong
    • Progress in Superconductivity
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    • v.5 no.1
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    • pp.9-12
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    • 2003
  • We observed the splitting of the fluxon-flow branches in the current-voltage characteristics of serially stacked intrinsic Josephson junctions (IJJs) formed in $Bi_2$$Sr_2$$CaCu_2$$O_{ 8+x}$ single crystals in the long-junction limit. Stacks of IJJs were sandwiched between two Au electrodes deposited on the top and the bottom of the stack using the ‘double-side cleaving technique’. In all the samples studied, the branch splitting started occurring for a dense fluxon configuration around 2 T and became more distinct in a higher magnetic field range. This observation can be explained in terms of switching between different Josephson fluxon modes in resonance with the collective plasma oscillations induced by both inductive and capacitive coupling between stacked IJJs. This is the first detailed and quantitative identification of the coherent flux-flow modes in stacked..

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Neuro-Behçet disease presented diplopia with hemiparesis following minor head trauma

  • Choi, Ja-Yun;Park, Sun-Young;Hwang, In-Ok;Lee, Young-Hwan
    • Clinical and Experimental Pediatrics
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    • v.55 no.9
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    • pp.354-357
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    • 2012
  • Behçet disease (BD) is rare in childhood. We report a 9-year-old boy with neuro-Behçet disease who presented diplopia and weakness on the left side after a cerebral concussion. Brain magnetic resonance imaging (MRI) revealed hyperintensity of the right mesodiencephalic junction on T2-weighted and fluid attenuated inversion recovery images. Prednisolone administration resulted in complete remission and normalization of abnormal MRI finding. Brain MRI is a useful diagnostic tool when the neurological sign is the first symptom of subclinical BD.

Ferroelectric Properties of Hetero-Junction SrBi$_2Ta_2O_9$/Pb(Zr,Ti)O$_3$ (이종접합 SrBi$_2Ta_2O_9$/Pb(Zr,Ti)O$_3$박막 케패시터의 강유전 특성)

  • 이광배;김종탁
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.04a
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    • pp.217-221
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    • 1997
  • We have investigated the ferroelectric properties of multi-layered SrBi$_2$Ta$_2$$O_{9}$Pb(Zr,Ti)O$_3$, SBT/PZT, thin film capacitors. Specimens were prepared onto Pt-coated Si wafer by sol-gel method. Ferroelectric properties of these finns could be obtained only for thin SBT layers below 50nm in thickness. The values of dielectric constant and remnant polarization depend mainly on the thickness of SBT layer, which arises from the paraelectric interface layer between SBT and PZT due to the thermal diffusion of Pb. The value of remnant poarization of PZT/SBT is greater than that of SBT, and the plarization fatigue behaviors of PZT/SBT/Pt capacitors are somewhat improved as compared with those of PZT/Pt.t.

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Monte carlo analysis of InAlGaAs/InGaAs HBT (InAlGaAs/InGaAs HBT의 Monte carlo 해석)

  • 황성범;김용규;송정근
    • Proceedings of the IEEK Conference
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    • 1998.06a
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    • pp.405-408
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    • 1998
  • Due to the large conduction band discontinuity between emitter base, OmGaAs HBT has an advantge to enable the hot electrons to inject into the base. In this paper, InAlGaAs/InGaAs HBT with the various emitter junction gradings and the modified collectors are simulated and analyzed by HMC(hybrid monte carlo) simulator in order to find a optimal structure for the shortest transit time. A minium base transit time (.tau.$_{b}$ ) of 0.21 ps was obtained for HBT with the grading layer, which is parabolically graded from x=1.0 to x=0.5. The minimum collector transit time (.tau.$_{c}$ ) of 0.31ps was found when the collector was modified by inserting p$^{[-10]}$ and p$^{+}$ layers. Thus HBT in combination with the emitter grading and the modified collector layer showed the cut-off frequency (f$_{T}$) of 183GHz.z.z.

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ZnO NW-based ultraviolet photodiodes fabricated by dielectrophoresis technique (교류 전기장 배열 기법에 의해 제작된 ZnO 나노선 기반의 자외선 광다이오드)

  • Kim, Kwang-Eun;Kang, Jeong-Min;Lee, Myeong-Won;Yoon, Chang-Joon;Jeon, Young-In;Kim, Sang-Sig
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.259-259
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    • 2010
  • 교류 전기장에 의해 배열된 ZnO 나노선 기반의 광다이오드를 제작하고 자외선 광특성을 조사하였다. ZnO 나노선은 dielectrophoresis (DEP) force와 토크 (T)에 의하여 두 전극사이에 배열되며, silicon (Si)나노선과 접합을 하여 p-n 접합을 형성한다. 형성된 p-n 접합은 정류작용을 하는 다이오드 특성을 보이며, 자외선 입사시 전류 점멸비 (on/off ratio) $10^1{\sim}10^2$을 보이는 광다이오드(photodiode)로서 동작한다.

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A study on intelligent robot based on home network (홈 네트워크 기반의 지능형 홈 로봇의 연구)

  • Jung, Byung-Chan;Park, Jin-Hyun;Choi, Dong-Suk;Kim, Hun-Mo
    • Proceedings of the KSME Conference
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    • 2003.04a
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    • pp.792-798
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    • 2003
  • This paper is about implementation of intelligent robot based on home network. Existing robots are mainly stand alone type. Home network is spreading rapidly and can play an important role as a path for informations between appliances in home. Robot can be more intelligent and have versatile functions with a junction of home network. By distribution of tasks through home network, robot doesn't have to process every task. In addition, robot can access to appliances through network as appliances are added continuously. In the future, smart space in which robot behaves on various types of network is in expectation. In this research, home network based system which consists of home server, embedded robot, and intelligent robot is proposed and implemented.

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A Study on the Effect of Physico- Chemical Factors in Wear Mechanism in a Lubricated Concentrated Contact (I) (윤활시스템에서 마모메카니즘에 미치는 물리화학적 영향에 관한 연구(I))

  • 최웅수;권오관;문탁진;유영홍
    • Tribology and Lubricants
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    • v.4 no.1
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    • pp.36-42
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    • 1988
  • On the basis of the thermally-activated Wear theory, it is well estabilished that the secondary activated energy, which is mainly resulted from the exothermic reaction of hydrogen from thermal decomposition of the hydrocarbons at the high temperature and the high speed, caused catastropic failure. The new additive, viz., DEP was synthesized to reduce or eliminate the hydrogen effect at the contact junction. Through the thermal degrading and the thermodynamic consideration, the synthesized additive, viz., DEP showed the possibiliy as the hydrogen scavenger.

Recent Development of MRAM Technology

  • Miyazaki, T.;Ando, Y.;Kubota, H.
    • Journal of Magnetics
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    • v.8 no.1
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    • pp.36-44
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    • 2003
  • Three topics which are related to technologies for developing of large capacity MRAM over Gbits are reviewed. First, it is stressed that inelastic-electron-tunnel-tunneling spectroscopy(IETS) is a powerfull method to investigate the interface state between magnetic electrodes and insulator. Second, magnetic tunnel junctions with small bias voltage dependence are introduced. Finally, fabrication method of carbon masks for very small magnetic tunnel junctions is demonstrated. These three topics were presented at 47^{th} MMM 2002 conference and each paper will appear in the proceedings.

A case of Discospondylitis in a Dog (개에서 Discospondylitis의 진단과 치료 일례)

  • 김주민;송상범;황철용;윤정희;윤화영;한홍율
    • Journal of Veterinary Clinics
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    • v.19 no.4
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    • pp.436-439
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    • 2002
  • Discospondylitis is an infection of an intervertebral disk with concurrent osteomyelitis of contiguous vertebrae. Clinical signs are variable and include pain, fever, anorexia, weight loss, depression, stilted gait and paresis or paralysis. A seven-year-old, intact female Yurkshire terrier dog was refered to the Vfterinary Medicine Teaching Hospital of Seoul National University because of intermitent pain of unknown cause for 2 weeks. On physical examination, pain was evident when spines were manipulated, especially thoracolumbar junction part. No neurologic deficits were deteced in the general neurologic test. Spinal radiography demonstrated the bony lysis of the vertebral end plates and sclerosis of the $T_{12-13}$ vertebral body. Based on the results of examinations, the dog was diagnosed as discospondylitis and recoverd following antibiotic therapy.

A New Reference Cell for 1T-1MTJ MRAM

  • Lee, S.Y.;Kim, H.J.;Lee, S.J.;Shin, H.S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.2
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    • pp.110-116
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    • 2004
  • We propose a novel sensing scheme, which operates by sensing the difference in voltage between a memory cell and a reference cell for a magneto-resistive random access memory (MRAM). A new midpoint-reference generation circuit is adopted for the reference cell to improve the sensing margin and to guarantee correct operation of sensing circuit for wide range of tunnel magneto resistance (TMR) voltages. In this scheme, the output voltage of the reference cell becomes nearly the midpoint between the cell voltages of high and low states even if the voltage across the magnetic tunnel junction (MTJ) varies.